JP2005005701A - ウェーハエッジエッチング装置及び方法 - Google Patents

ウェーハエッジエッチング装置及び方法 Download PDF

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Publication number
JP2005005701A
JP2005005701A JP2004155918A JP2004155918A JP2005005701A JP 2005005701 A JP2005005701 A JP 2005005701A JP 2004155918 A JP2004155918 A JP 2004155918A JP 2004155918 A JP2004155918 A JP 2004155918A JP 2005005701 A JP2005005701 A JP 2005005701A
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JP
Japan
Prior art keywords
semiconductor wafer
edge
electrode
etching
insulating plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004155918A
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English (en)
Japanese (ja)
Other versions
JP2005005701A5 (enExample
Inventor
Chang-Won Choi
昶 源 崔
Tae Ryong Kim
太 龍 金
Jong Baum Kim
宗 範 金
Teiu Jo
廷 宇 徐
Chang Ju Byun
昌 柱 邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020030033844A external-priority patent/KR100585089B1/ko
Priority claimed from KR1020030070634A external-priority patent/KR100604826B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2005005701A publication Critical patent/JP2005005701A/ja
Publication of JP2005005701A5 publication Critical patent/JP2005005701A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP2004155918A 2003-05-27 2004-05-26 ウェーハエッジエッチング装置及び方法 Withdrawn JP2005005701A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020030033844A KR100585089B1 (ko) 2003-05-27 2003-05-27 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법
KR1020030070634A KR100604826B1 (ko) 2003-10-10 2003-10-10 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치 및그 플라즈마 처리방법
US10/762,526 US20040238488A1 (en) 2003-05-27 2004-01-23 Wafer edge etching apparatus and method

Publications (2)

Publication Number Publication Date
JP2005005701A true JP2005005701A (ja) 2005-01-06
JP2005005701A5 JP2005005701A5 (enExample) 2006-11-02

Family

ID=34108610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004155918A Withdrawn JP2005005701A (ja) 2003-05-27 2004-05-26 ウェーハエッジエッチング装置及び方法

Country Status (4)

Country Link
JP (1) JP2005005701A (enExample)
CN (1) CN1595618A (enExample)
DE (1) DE102004024893A1 (enExample)
TW (1) TWI281713B (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009510784A (ja) * 2005-09-27 2009-03-12 ラム リサーチ コーポレーション 基板から副生成物を除去する装置及び除去方法
JP2010517295A (ja) * 2007-01-26 2010-05-20 ラム リサーチ コーポレーション 真空チャックを備えるベベルエッチャ
JP2010518635A (ja) * 2007-02-08 2010-05-27 ラム リサーチ コーポレーション ベベル洗浄装置
JP2011511437A (ja) * 2008-01-28 2011-04-07 ラム リサーチ コーポレーション べベル端部エッチングプラズマチャンバにおける端部除外制御のためのガス調整
US8192822B2 (en) 2008-03-31 2012-06-05 Memc Electronic Materials, Inc. Edge etched silicon wafers
US8308896B2 (en) 2005-09-27 2012-11-13 Lam Research Corporation Methods to remove films on bevel edge and backside of wafer and apparatus thereof
US8735261B2 (en) 2008-11-19 2014-05-27 Memc Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
JP2022100339A (ja) * 2020-02-04 2022-07-05 ピーエスケー インコーポレイテッド 基板処理装置及び基板処理方法
US12068138B2 (en) 2021-03-18 2024-08-20 Kioxia Corporation Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
CN101930480B (zh) * 2009-06-19 2012-03-07 中芯国际集成电路制造(上海)有限公司 优化cmos图像传感器版图的方法
CN103715049B (zh) * 2012-09-29 2016-05-04 中微半导体设备(上海)有限公司 等离子体处理装置及调节基片边缘区域制程速率的方法
JP6348321B2 (ja) 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 エッチング装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8308896B2 (en) 2005-09-27 2012-11-13 Lam Research Corporation Methods to remove films on bevel edge and backside of wafer and apparatus thereof
JP2009510784A (ja) * 2005-09-27 2009-03-12 ラム リサーチ コーポレーション 基板から副生成物を除去する装置及び除去方法
JP2010517295A (ja) * 2007-01-26 2010-05-20 ラム リサーチ コーポレーション 真空チャックを備えるベベルエッチャ
KR101423359B1 (ko) * 2007-02-08 2014-07-24 램 리써치 코포레이션 베벨 세정 디바이스
JP2013145884A (ja) * 2007-02-08 2013-07-25 Lam Research Corporation ベベル洗浄装置及び方法
JP2010518635A (ja) * 2007-02-08 2010-05-27 ラム リサーチ コーポレーション ベベル洗浄装置
JP2011511437A (ja) * 2008-01-28 2011-04-07 ラム リサーチ コーポレーション べベル端部エッチングプラズマチャンバにおける端部除外制御のためのガス調整
US8192822B2 (en) 2008-03-31 2012-06-05 Memc Electronic Materials, Inc. Edge etched silicon wafers
US8309464B2 (en) 2008-03-31 2012-11-13 Memc Electronic Materials, Inc. Methods for etching the edge of a silicon wafer
US8735261B2 (en) 2008-11-19 2014-05-27 Memc Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
JP2022100339A (ja) * 2020-02-04 2022-07-05 ピーエスケー インコーポレイテッド 基板処理装置及び基板処理方法
JP7320874B2 (ja) 2020-02-04 2023-08-04 ピーエスケー インコーポレイテッド 基板処理装置及び基板処理方法
US11776791B2 (en) 2020-02-04 2023-10-03 Psk Inc. Substrate processing apparatus and substrate processing method
US12068138B2 (en) 2021-03-18 2024-08-20 Kioxia Corporation Semiconductor manufacturing apparatus and semiconductor device manufacturing method

Also Published As

Publication number Publication date
DE102004024893A1 (de) 2005-04-14
TWI281713B (en) 2007-05-21
TW200501256A (en) 2005-01-01
CN1595618A (zh) 2005-03-16

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