JP7320874B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 227
- 238000003672 processing method Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims description 136
- 230000008569 process Effects 0.000 claims description 120
- 239000012809 cooling fluid Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 195
- 238000005530 etching Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000004380 ashing Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32385—Treating the edge of the workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Description
一実施形態によれば、前記絶縁リング及び前記下部電極は、前記チャックに支持された基板縁領域の底面と互いに離隔されるように提供されることができる。
W 基板
GA 非活性ガス
GB 工程ガス
1100 チャック
1110 電源
1200 絶縁リング
1300 下部電極
1400 誘電体板
1500 上部電極
300 支持ユニット
310 チャック
330 絶縁リング
350 下部電極
500 誘電体板ユニット
510 第1ベース
520 誘電体板
600 上部電極ユニット
610 第2ベース
620 上部電極
700 ガス供給ユニット
710 第1ガス供給部
712 第1ガス供給源
714 第1ガス供給ライン
716 第1バルブ
730 第2ガス供給部
732 第2ガス供給源
734 第2ガス供給ライン
736 第2バルブ
Claims (8)
- 基板処理装置であって、
基板を支持するように構成されたチャックと、
前記チャックによって支持される基板の中央領域に工程ガスを供給するように構成された第1ガス供給部と、
前記チャックによって支持される基板に面するように配置された誘電体板と、
上部から見られる時に、前記誘電体板を囲む一方で前記誘電体板から離隔される上部電極と、
上部から見られる時に、前記チャックを囲む一方で上部電極に面するように配置された下部電極と、
前記チャックと前記下部電極との間に差し挟まれる絶縁リングと、
前記チャックによって支持される基板の縁領域上に設けられる誘電体板と上部電極との間の空間を通じて前記工程ガスを供給するように構成された第2ガス供給部と、
制御器と、
を備える、基板処理装置であり、
前記誘電体板、前記上部電極、及び前記下部電極は、中でガス供給ユニットによって供給される工程ガスが流れる空間の体積が、上部から見られる時に、前記チャックによって支持される基板の縁領域内で、前記チャックによって支持される基板の中央領域より大きいように設けられ、
前記制御器は、前記チャックによって支持される基板の縁領域を処理する時に、前記第1ガス供給部のみが前記工程ガスを供給するように、前記第1ガス供給部及び前記第2ガス供給部を制御するように構成され、
前記絶縁リングは、前記チャック及び前記下部電極と直接接触しており、且つ、その上で前記下部電極が前記絶縁リング内に貫通する段差部を含み、それによって、上部から見られる時に、前記下部電極が前記段差部内で前記絶縁リングと重なっており、
前記絶縁リング及び前記下部電極は、前記チャックによって支持される基板の縁領域の底面から離隔される、基板処理装置。 - 前記チャックは、前記チャック内に形成される加熱手段及び冷却流路を有し、
前記加熱手段は、前記チャックを加熱するように構成され、
前記冷却流路は、その中で流れる冷却流体によって前記チャックを冷却するように構成される、請求項1に記載の基板処理装置。 - 前記制御器は、前記第1ガス供給部が前記工程ガスを供給する時に、電源が前記チャックによって支持される基板の縁領域にプラズマを生成するように前記チャックに電力を印加するように、支持ユニット及び前記ガス供給ユニットを制御するように構成される、請求項2に記載の基板処理装置。
- 前記チャックは電源と連結される、請求項1に記載の基板処理装置。
- 前記上部電極は接地される、請求項1に記載の基板処理装置。
- 前記下部電極は接地される、請求項1に記載の基板処理装置。
- 前記上部電極は、上部から見られる時に前記誘電体板から離隔される、請求項1に記載の基板処理装置。
- 請求項1に記載の基板処理装置を使用して基板を処理するための方法であって、前記方法は、
プラズマを供給することによって前記チャックによって支持される基板の縁領域を処理すること
を備え、
前記工程ガスは、前記基板の縁領域が処理される時に、前記基板の中央領域にのみ供給される、方法。
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KR1020200013296A KR102116474B1 (ko) | 2020-02-04 | 2020-02-04 | 기판 처리 장치 및 기판 처리 방법 |
KR10-2020-0013296 | 2020-02-04 | ||
JP2020093189A JP2021125675A (ja) | 2020-02-04 | 2020-05-28 | 基板処理装置及び基板処理方法 |
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US (1) | US11776791B2 (ja) |
JP (2) | JP2021125675A (ja) |
KR (1) | KR102116474B1 (ja) |
CN (1) | CN113223914B (ja) |
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KR102396431B1 (ko) | 2020-08-14 | 2022-05-10 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 반송 방법 |
KR102275757B1 (ko) * | 2020-08-24 | 2021-07-09 | 피에스케이 주식회사 | 기판 처리 장치 |
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KR102589181B1 (ko) * | 2021-08-31 | 2023-10-16 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
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KR102275757B1 (ko) * | 2020-08-24 | 2021-07-09 | 피에스케이 주식회사 | 기판 처리 장치 |
CN115831699A (zh) * | 2021-09-17 | 2023-03-21 | 东京毅力科创株式会社 | 等离子体处理装置 |
JP2023044379A (ja) * | 2021-09-17 | 2023-03-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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JP2005005701A (ja) | 2003-05-27 | 2005-01-06 | Samsung Electronics Co Ltd | ウェーハエッジエッチング装置及び方法 |
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US11776791B2 (en) | 2023-10-03 |
CN113223914A (zh) | 2021-08-06 |
JP2022100339A (ja) | 2022-07-05 |
TWI735225B (zh) | 2021-08-01 |
CN113223914B (zh) | 2024-03-26 |
SG10202004597PA (en) | 2021-09-29 |
JP2021125675A (ja) | 2021-08-30 |
US20210241997A1 (en) | 2021-08-05 |
KR102116474B1 (ko) | 2020-05-28 |
TW202131432A (zh) | 2021-08-16 |
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