CN1595612A - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN1595612A CN1595612A CNA2004100851575A CN200410085157A CN1595612A CN 1595612 A CN1595612 A CN 1595612A CN A2004100851575 A CNA2004100851575 A CN A2004100851575A CN 200410085157 A CN200410085157 A CN 200410085157A CN 1595612 A CN1595612 A CN 1595612A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- semiconductor device
- wafer
- monitoring
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (15)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP316589/2003 | 2003-09-09 | ||
JP316591/2003 | 2003-09-09 | ||
JP316589/03 | 2003-09-09 | ||
JP2003316588 | 2003-09-09 | ||
JP2003316589 | 2003-09-09 | ||
JP316590/2003 | 2003-09-09 | ||
JP316590/03 | 2003-09-09 | ||
JP2003316590 | 2003-09-09 | ||
JP316588/03 | 2003-09-09 | ||
JP316588/2003 | 2003-09-09 | ||
JP316591/03 | 2003-09-09 | ||
JP2003316591 | 2003-09-09 | ||
JP259654/04 | 2004-09-07 | ||
JP2004259654A JP4880889B2 (ja) | 2003-09-09 | 2004-09-07 | 半導体装置の製造方法 |
JP259654/2004 | 2004-09-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1595612A true CN1595612A (zh) | 2005-03-16 |
CN100431095C CN100431095C (zh) | 2008-11-05 |
Family
ID=34557746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100851575A Expired - Fee Related CN100431095C (zh) | 2003-09-09 | 2004-09-09 | 半导体器件的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7335518B2 (zh) |
JP (1) | JP4880889B2 (zh) |
CN (1) | CN100431095C (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1742258A1 (en) * | 2005-07-08 | 2007-01-10 | STMicroelectronics S.r.l. | Semiconductor power device with multiple drain and corresponding manufacturing process |
US8315729B2 (en) * | 2010-05-06 | 2012-11-20 | International Business Machines Corporation | Enhancing investigation of variability by inclusion of similar objects with known differences to the original ones |
US9082660B2 (en) * | 2013-08-13 | 2015-07-14 | United Microelectronics Corp. | Method of controlling threshold voltage and method of fabricating semiconductor device |
JP6610785B2 (ja) * | 2016-07-04 | 2019-11-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
US20200135489A1 (en) * | 2018-10-31 | 2020-04-30 | Atomera Incorporated | Method for making a semiconductor device including a superlattice having nitrogen diffused therein |
CN114295942B (zh) * | 2021-11-29 | 2024-03-15 | 国网北京市电力公司 | 电力电缆故障诊断系统、电力电缆的故障确定方法及装置 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60200301A (ja) * | 1984-03-26 | 1985-10-09 | Hitachi Ltd | 半導体製造プロセス制御システム |
JPH0786521A (ja) * | 1993-09-20 | 1995-03-31 | Fujitsu Ltd | 半導体装置の特性トリミング方法 |
US5408405A (en) * | 1993-09-20 | 1995-04-18 | Texas Instruments Incorporated | Multi-variable statistical process controller for discrete manufacturing |
JPH09321286A (ja) * | 1996-05-28 | 1997-12-12 | Matsushita Electric Ind Co Ltd | 半導体装置のしきい値電圧の制御方法,半導体装置及びその製造方法 |
JPH1084025A (ja) * | 1996-09-06 | 1998-03-31 | Toshiba Corp | トンネル絶縁膜の膜質評価方法および半導体装置のスクリーニング方法 |
US6083272A (en) * | 1997-06-13 | 2000-07-04 | Advanced Micro Devices, Inc. | Method of adjusting currents on a semiconductor device having transistors of varying density |
JP3662439B2 (ja) * | 1998-04-24 | 2005-06-22 | 富士通株式会社 | 半導体試験用データ処理装置及び方法並びに半導体試験装置 |
JP2000164476A (ja) * | 1998-11-26 | 2000-06-16 | Mitsubishi Electric Corp | 半導体製造工程の管理方法、半導体製造装置の管理方法、及び半導体製造環境の管理方法 |
JP3381693B2 (ja) * | 1999-12-17 | 2003-03-04 | 日本電気株式会社 | 半導体装置の製造方法 |
US6640151B1 (en) * | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Multi-tool control system, method and medium |
US6485990B1 (en) * | 2000-01-04 | 2002-11-26 | Advanced Micro Devices, Inc. | Feed-forward control of an etch processing tool |
US6567717B2 (en) * | 2000-01-19 | 2003-05-20 | Advanced Micro Devices, Inc. | Feed-forward control of TCI doping for improving mass-production-wise, statistical distribution of critical performance parameters in semiconductor devices |
JP4024981B2 (ja) * | 2000-02-23 | 2007-12-19 | 株式会社ルネサステクノロジ | 半導体集積回路装置及びその半導体集積回路装置を用いた不良検出方法 |
JP2001332723A (ja) * | 2000-05-19 | 2001-11-30 | Nec Corp | 半導体装置の製造方法 |
JP2002083958A (ja) * | 2000-09-08 | 2002-03-22 | Sony Corp | イオン注入条件の設定方法および半導体装置の製造方法 |
US6806951B2 (en) * | 2000-09-20 | 2004-10-19 | Kla-Tencor Technologies Corp. | Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen |
US6304999B1 (en) * | 2000-10-23 | 2001-10-16 | Advanced Micro Devices, Inc. | Method and apparatus for embedded process control framework in tool systems |
JP2002190509A (ja) * | 2000-12-22 | 2002-07-05 | Mitsubishi Electric Corp | 検査解析方法及び半導体装置 |
JP2002289620A (ja) * | 2001-03-26 | 2002-10-04 | Matsushita Electric Ind Co Ltd | 半導体回路の配線電気特性評価方法 |
JP2003022945A (ja) * | 2001-07-06 | 2003-01-24 | Mitsubishi Electric Corp | 工程管理装置、工程管理方法および工程を管理するためのプログラム |
US6597447B1 (en) * | 2001-07-31 | 2003-07-22 | Advanced Micro Devices, Inc. | Method and apparatus for periodic correction of metrology data |
JP3997066B2 (ja) * | 2001-08-20 | 2007-10-24 | 株式会社日立製作所 | 電子線を用いたプロセス変動監視システムおよび方法 |
US6618120B2 (en) * | 2001-10-11 | 2003-09-09 | Nikon Corporation | Devices and methods for compensating for tilting of a leveling table in a microlithography apparatus |
JP4068327B2 (ja) * | 2001-10-11 | 2008-03-26 | 株式会社東芝 | 半導体製造装置と半導体装置の製造方法 |
US6756243B2 (en) * | 2001-10-30 | 2004-06-29 | Advanced Micro Devices, Inc. | Method and apparatus for cascade control using integrated metrology |
US6960416B2 (en) * | 2002-03-01 | 2005-11-01 | Applied Materials, Inc. | Method and apparatus for controlling etch processes during fabrication of semiconductor devices |
US7225047B2 (en) * | 2002-03-19 | 2007-05-29 | Applied Materials, Inc. | Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements |
US6842029B2 (en) * | 2002-04-11 | 2005-01-11 | Solid State Measurements, Inc. | Non-invasive electrical measurement of semiconductor wafers |
JP2003318124A (ja) * | 2002-04-23 | 2003-11-07 | Nec Electronics Corp | トランジスタ特性の補正方法およびトランジスタの製造方法 |
JP4018438B2 (ja) * | 2002-04-30 | 2007-12-05 | キヤノン株式会社 | 半導体露光装置を管理する管理システム |
US6925347B1 (en) * | 2002-08-19 | 2005-08-02 | Advanced Micro Devices, Inc. | Process control based on an estimated process result |
US6894517B2 (en) * | 2002-10-17 | 2005-05-17 | United Microelectronics Corp. | Method for monitoring oxide quality |
US7254453B2 (en) * | 2002-11-21 | 2007-08-07 | Advanced Micro Devices, Inc. | Secondary process controller for supplementing a primary process controller |
-
2004
- 2004-09-07 JP JP2004259654A patent/JP4880889B2/ja not_active Expired - Fee Related
- 2004-09-08 US US10/935,974 patent/US7335518B2/en active Active
- 2004-09-09 CN CNB2004100851575A patent/CN100431095C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100431095C (zh) | 2008-11-05 |
JP2005109455A (ja) | 2005-04-21 |
JP4880889B2 (ja) | 2012-02-22 |
US20050142673A1 (en) | 2005-06-30 |
US7335518B2 (en) | 2008-02-26 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160311 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081105 Termination date: 20200909 |