CN1577777A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN1577777A
CN1577777A CNA200410062179XA CN200410062179A CN1577777A CN 1577777 A CN1577777 A CN 1577777A CN A200410062179X A CNA200410062179X A CN A200410062179XA CN 200410062179 A CN200410062179 A CN 200410062179A CN 1577777 A CN1577777 A CN 1577777A
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semiconductor chip
lead
pad
semiconductor device
separator
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CN1324668C (zh
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尾形义春
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

提供一种装配性及可靠性非常优越的半导体装置及其制造方法。准备安放了形成有多个第一焊盘(14)的第一半导体芯片(10)的布线基板(20)。各第一焊盘(14)与各布线图案(22)之间分别用导线(30)电连接。在第一半导体芯片(10)上设置树脂浆(40)。将形成有多个第二焊盘的第二半导体芯片(50)通过介入树脂浆(40)搭载在第一半导体芯片(10)上。树脂浆(40)被固化后形成隔离层(60)，将第一与第二半导体芯片(10、50)固定。隔离层(60)，形成在第二焊盘(54)下方直到外侧。导线(30)按其最高部位被配置在第一半导体芯片(10)的外侧的方式而进行设置。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种半导体装置及其制造方法。
背景技术
众所周知，通过在多个半导体芯片之间介入隔离层进行层叠，可制成一个半导体装置。此时，半导体芯片与布线图案之间通过导线电连接。为制造出装配性非常好的薄型半导体装置，希望隔离层及半导体芯片的厚度要薄。
发明内容
本发明的目的在于提供一种装配性及可靠性良好的半导体装置及其制造方法。
(1)有关本发明的半导体装置的制造方法，包括：准备搭载了形成有多个第一焊盘的第一半导体芯片并具有布线图案的布线基板的工序；将各上述第一焊盘与上述布线图案采用导线进行电连接的工序；在上述第一半导体芯片上设置树脂浆的工序；将形成有多个第二焊盘的第二半导体芯片，按照与上述第一焊盘的至少一部分隔开间隔而重叠的方式，通过介入上述树脂浆后搭载在上述第一半导体芯片上的工序；以及让上述树脂浆固化，在上述第一半导体芯片和上述第二半导体芯片之间形成隔离层，将上述第一以及第二半导体芯片固定的工序；上述隔离层在上述第二焊盘之下形成并直到外侧；上述导线按照其最高部位配置在上述第一半导体芯片外侧的方式进行设置。
依据本发明，隔离层在第二焊盘之下形成并直到外侧。为此，即使对第二焊盘施加负荷，第二半导体芯片也不容易破损。再有，导线按照其最高部位配置在第一半导体芯片外侧的方式进行设置。即，在第一半导体芯片上可以降低导线的高度。这样，即使树脂浆流动，导线也不容易移动，可以防止导线之间的短路。据此，可以制造出可靠性高的半导体装置。
(2)有关本发明的半导体装置的制造方法，包括：准备搭载了形成有多个第一焊盘的第一半导体芯片并具有布线图案的布线基板的工序；将各上述第一焊盘与上述布线图案采用导线进行电连接的工序；在上述第一半导体芯片上设置树脂浆的工序；将形成有多个第二焊盘的第二半导体芯片，按照与上述第一焊盘的至少一部分隔开间隔而重叠的方式，通过介入上述树脂浆后搭载在上述第一半导体芯片上的工序；以及让上述树脂浆固化，在上述第一半导体芯片和上述第二半导体芯片之间形成隔离层，将上述第一以及第二半导体芯片固定的工序；上述隔离层在上述第二焊盘之下形成并直到外侧；上述导线按照从上述第一半导体芯片上的空间向斜上方凸出的方式进行设置。
依据本发明，隔离层在第二焊盘之下形成并直到外侧。为此，即使对第二焊盘施加负荷，第二半导体芯片也不容易破损。再有，导线按照从第一半导体芯片上的空间向斜上方凸出的方式进行设置。即，在第一半导体芯片上可以降低导线的高度。这样，即使树脂浆流动，导线也不容易移动，可以防止导线之间的短路。据此，可以制造出可靠性高的半导体装置。
(3)在该半导体装置的制造方法中，也可以进一步包括使上述树脂浆从第一半导体芯片流至上述布线基板上，在上述第一半导体芯片的周围形成边缘带(fillet)的工序。这样，在布线基板中在第一半导体芯片的周围形成边缘带。为此，利用边缘带可以保护第一半导体芯片以及布线基板，可以制造可靠性高的半导体装置。
(4)在该半导体装置的制造方法中，也可以在设置上述树脂浆的工序中，仅在上述第一半导体芯片上设置上述树脂浆；在搭载上述第二半导体芯片的工序中，按照让上述树脂浆流出到上述布线基板上的方式搭载上述第二半导体芯片。
(5)在该半导体装置的制造方法中，上述树脂浆，也可以在其内部含有多个绝缘性球状体，将这些球状体置于上述第一及第二半导体芯片之间。
(6)在该半导体装置的制造方法中，采用上述导线进行电连接的工序也可以包括：将上述导线与上述布线图案电连接的工序；以及之后将上述导线与上述第一焊盘电连接的工序。
(7)在该半导体装置的制造方法中，采用上述导线进行电连接的工序也可以包括：将上述导线与上述第一焊盘电连接的工序；以及之后将上述导线与上述布线图案电连接的工序。
(8)在该半导体装置的制造方法中，在固化上述树脂浆的工序之后，也可以进一步包括采用其它导线将上述第二焊盘与上述布线图案电连接的工序。
(9)有关本发明的半导体装置，包括：布线基板，其形成有布线图案；第一半导体芯片，搭载在上述布线基板上，形成有多个第一焊盘；导线，其将上述布线图案与各上述第一焊盘分别电连接；第二半导体芯片，其按照与上述第一焊盘隔开间隔而重叠的方式被搭载在上述第一半导体芯片上，形成有多个第二焊盘；和隔离层，其被形成在上述第一半导体芯片和上述第二半导体芯片之间，固定上述第一以及第二半导体芯片；上述隔离层在上述第二焊盘之下形成并直到外侧；上述导线按照其最高部位配置在上述隔离层的外侧的方式进行设置。
依据本发明，隔离层在第二焊盘之下形成并直到外侧。为此，即使对第二焊盘施加负荷，第二半导体芯片也不容易破损。再有，导线按照其最高部位配置在隔离层的外侧的方式进行设置。即，在第一半导体芯片上可以降低导线的高度。这样，即使树脂浆流动，导线也不容易移动，可以防止导线之间的短路。据此，可以制造出可靠性高的半导体装置。
(10)有关本发明的半导体装置，包括：布线基板，其形成有布线图案；第一半导体芯片，搭载在上述布线基板上，形成有多个第一焊盘；导线，其将上述布线图案与各上述第一焊盘分别电连接；第二半导体芯片，其按照与上述第一焊盘隔开间隔而重叠的方式被搭载在上述第一半导体芯片上，形成有多个第二焊盘；隔离层，其被形成在上述第一半导体芯片和上述第二半导体芯片之间，固定上述第一以及第二半导体芯片；上述隔离层在上述第二焊盘之下形成并直到外侧；上述导线按照从上述隔离层向斜上方凸出的方式进行设置。
依据本发明，隔离层在第二焊盘之下形成并直到外侧。为此，即使对第二焊盘施加负荷，第二半导体芯片也不容易破损。再有，导线按照从隔离层向斜上方凸出的方式进行设置。即，在第一半导体芯片上可以降低导线的高度。这样，即使树脂浆流动，导线也不容易移动，可以防止导线之间的短路。据此，可以制造出可靠性高的半导体装置。
(11)在该半导体装置中，在上述布线基板上也可以进一步具有配置在上述第一半导体芯片周围的边缘带。这样，利用边缘带可以减少第一半导体芯片以及布线基板受到外力的影响，可以制造可靠性高的半导体装置。
(12)在该半导体装置中，上述隔离层与上述边缘带也可以是相同的材料。
(13)在该半导体装置中，上述隔离层，也可以在其内部具有绝缘性球状体。
附图说明
图1表示与适用本发明的实施方式有关的半导体装置制造方法的示意图。
图2A及图2B表示与适用本发明的实施方式有关的半导体装置制造方法的示意图。
图3表示与适用本发明的实施方式有关的半导体装置制造方法的示意图。
图4表示与适用本发明的实施方式有关的半导体装置制造方法的示意图。
图5表示与适用本发明的实施方式有关的半导体装置制造方法的示意图。
图6表示与适用本发明实施方式有关的半导体装置制造方法的示意图。
图7表示与适用本发明的实施方式有关的半导体装置制造方法的示意图。
图8表示装配了与适用本发明的实施方式有关的半导体装置的电路基板的示意图。
图9表示具有与适用本发明的实施方式有关的半导体装置的电子设备的示意图。
图10表示具有与适用本发明的实施方式有关的半导体装置的电子设备的示意图。
图11A及图11B表示与适用本发明的实施方式变形例有关的半导体装置制造方法的示意图。
图12A及图12B表示与适用本发明的实施方式变形例有关的半导体装置制造方法的示意图。
图13A及图13B表示与适用本发明的实施方式变形例有关的半导体装置制造方法的示意图。
具体实施方式
以下参照附图对适用本发明的实施方式进行说明。但是，本发明不仅限于以下的实施方式。图1～图7表示有关适用本发明的实施方式的半导体装置制造方法的示意图。
有关本实施方式的半导体装置制造方法，如图1所示，包括：准备一块搭载了第一半导体芯片10、并具有布线图案22的布线基板20。
在第一半导体芯片10中，可形成由晶体管、存储器元件等构成的集成电路12。而且，在第一半导体芯片10中，也可形成多个第一焊盘14。第一焊盘14，可与第一半导体芯片10的内部进行电连接。第一焊盘14，也可与集成电路12进行电连接。或者，包括没有与集成电路12进行电连接的焊盘，也可称为第一焊盘14。第一焊盘14，在第一半导体芯片10一侧表面的端部，可沿外形的两边或者四边进行配置，还可配置在第一半导体芯片的中心部位。而且，在第一焊盘14，也可形成图中未画出的凸块。第一焊盘14，可以使用铝类或铜类金属制成。而且，在第一半导体芯片10中，避开第一焊盘14的中心位置，可形成钝化膜(图中未画出)。钝化膜例如可由SiO2、SiN、聚酰亚胺树脂等形成。此外，第一半导体芯片10的平面形状并没有特别限定，例如可以是矩形(含正方形)。
布线基板20，可以由有机类(如聚酰亚胺基板等)或者无机类(如陶瓷基板、玻璃基板等)的任何一种材料形成，以及这些材料的复合结构(环氧树脂玻璃基板)来形成。对布线基板20的平面形状没有特别的限制，大多数是矩形。布线基板20，可以由单层或多层基板构成。布线基板20，可以是带状的柔性基板，或是刚性基板。布线基板20，也可称之为转接板(interposer)。布线基板20中具有布线图案22。对布线图案22的材料没有特别的限制，例如可以含有由铜构成的层。而且，布线图案22，可以由单层或多层形成。在布线基板20中，为了将一侧的面与另一侧的面进行电连接可形成多个贯通孔24。贯通孔24，可用导电部件填充(参照图1)，也可在内壁面进行镀金处理。由此，可使布线基板20的两个面能够实现电连接。
在本实施方式中，第一半导体芯片10，被搭载在布线基板20上。第一半导体芯片10，如图1所示，是以形成焊盘14的面相反的面，朝向布线基板20，并装配在布线基板20上。第一半导体芯片10，也可以通过粘着剂16固定在布线基板20上。这时，粘着剂16，也可利用绝缘性的粘着剂。
另外，在本实施方式中，可在一个布线基板20上只搭载一个半导体芯片10制造半导体装置。但与此不同的是，也可在一个布线基板上搭载多个第一半导体芯片，一并形成多个半导体装置。
与本实施方式有关的半导体装置制造方法，包括：各第一焊盘14与布线图案22分别通过导线30进行电连接(参见图2B)。对导线30的材料没有特别的限制，例如可以使用金质导线。在本实施方式中，如图2B所示，导线30的最高部位被设置在第一半导体芯片10的外侧。换言之，设置导线30以从第一半导体芯片10上的空间向斜上方凸出。因此，在第一半导体芯片10上的空间中，可以降低导线30的高度。这样，由于可以减薄后述隔离层60的厚度，即可制造出具有优良装配性的半导体装置。而且，由于在第一半导体芯片10上的空间中降低了导线30的高度，可防止导线30发生由后述树脂浆40的流动所导致的较大位移。为此，可制造出高可靠性的半导体装置。
导线30，是使用众所周知的任何一种方法设置装配的。例如，首先将导线30与布线图案22进行电连接(参见图2A)，然后再将导线30与第一焊盘14进行电连接(参见图2B)，以此也可设置导线30。如果这样，可以减小导线30与第一半导体芯片10之间所形成的角度。因而，可以降低导线30的高度，制造出具有优良装配性的半导体装置。另外，在第一焊盘14上方形成一个凸块(图中未画出)。通常，当导线被连接到电极时，在导线或电极上施加超声波或热。如果在焊盘14上形成凸块，这些形成的应力就可以保护半导体芯片10(特别是集成电路12)，更可以制造出高可靠性的半导体装置。
与本实施方式有关的半导体装置制造方法，如图3所示，包括：在第一半导体芯片10上设置树脂浆40。树脂浆40，也可以是具有固化性的树脂。树脂浆40，通过固化而形成隔离层60。对树脂浆40的材料没有特别的限制，只要在固化时具有粘着性能的树脂即可。树脂浆40，也具有绝缘性。可使用滴灌工具使树脂浆40滴下(滴注)，以此来设置树脂浆40。树脂浆40可仅设置于第一半导体芯片10之上，此时，可设置在第一焊盘14内侧的区域内(参见图3)。但是，与此不同，也可预先直到形成第一焊盘14的区域，设置树脂浆40(图中未画出)。
与本实施方式有关的半导体装置制造方法，如图4所示，包括：在第一半导体芯片10上搭载第二半导体芯片50。第二半导体芯片50也适用对第一半导体芯片10说明的内容。例如，第二半导体50也具有集成电路52。而且，在第二半导体芯片50中，也可形成多个第二焊盘54。再者，虽然没有限制第二半导体芯片50的外形，但可采用与第一半导体芯片10同样的外形。在本实施方式中，第二半导体芯片50与第一焊盘14的至少一部分隔开一定间隔而重叠，树脂浆40介于其间并放置在第一半导体芯片10之上(参见图5)。此时，如图4所示，与形成第二焊盘54的面相反的面，朝向第一半导体芯片10(或树脂浆40)，来搭载第二半导体芯片50。第二半导体芯片50按不与导线30接触的方式进行搭载。因此，可防止导线30与第二半导体芯片50之间的短路，可以制造出可靠性高的半导体装置。而且，可在第二半导体芯片50与第一半导体芯片10相对的平面上形成绝缘层(图中未画出)。由此，可防止导线30与第二半导体芯片50之间的短路。
与本实施方式有关的半导体装置制造方法，如图5所示，包括：使树脂浆40固化，并在第一半导体芯片10与第二半导体芯片50之间形成隔离层60，固定第一半导体芯片10及第二半导体芯片50。使树脂浆40固化的处理，会因树脂浆40的种类不同而有所差异，例如，可考虑使用热处理、紫外线照射处理等方式。依据有关本实施方式的半导体装置制造方法，通过固化树脂浆40，形成隔离层60，固定第一半导体芯片10及第二半导体芯片50。即，形成隔离层60的工序，与固定第一半导体芯片10及第二半导体芯片50的工序一并进行。所以，可高效率制造半导体装置。
在与本实施方式有关的半导体装置制造方法中，隔离层60形成于第二焊盘54的下方，更向外延伸到外侧处(参见图5)。此时，隔离层60与第二半导体芯片50间的接触面，可形成于第二焊盘54的下方，更向外延伸到外侧处。如果这样，第二半导体焊盘50在宽大的区域上得到隔离层60的支撑。因此，即使是在第二半导体芯片50上被施加外力的情况下，第二半导体芯片50也不易破损，可制造出高可靠性的半导体装置。特别是，在向第二半导体芯片50的第二焊盘54上焊接导线时，施加在第二焊盘54附近的应力可防止第二半导体芯片50受到损伤。例如，由于可以调整树脂浆40的位置及使用量、并且控制施加在第二半导体芯片50上的压力，隔离层60可按所希望的位置以及大小形成。而且，如图5所示，隔离层60可以在第二半导体芯片50的区域之内形成。或者，与此不同，隔离层60，也可以在直至第二半导体芯片50的外侧区域内形成(图中未画出)。由此，也可得到同样的效果。
与本实施方式有关的半导体装置制造方法，如图6所示，包括：第二焊盘54与布线图案22通过其它导线35进行电连接。本工序是在固化树脂40形成隔离层60的工序完成后进行的。如前所述，在本实施方式中，隔离层60形成于第二焊盘54的下方，更向外延伸到外侧处。因此，通过形成隔离层60后设置导线35，在设置导线35的工序中可以防止第二半导体芯片50破损。而且，导线35可以使用公知的任一种方法来设置。即，与设置导线30的工序相同，首先将导线35与布线图案22进行电连接，然后，导线35与第二焊盘54进行电连接。如果这样，由于可降低导线35的高度，可制造出具有优良装配性的半导体装置。但是，与此不同，也可首先将导线35与第二焊盘54进行电连接，然后，再将导线35与布线图案22进行电连接，以此来设置导线35。
重复同样的工序，可以制造出含有2个以上的多个半导体芯片的半导体装置。然后，经过封装第1半导体芯片10及第2半导体芯片50，以及导线30、35等封装外壳70的形成工序、形成外部端子72的工序等，可制造出图7所示的半导体装置1。
与适用本发明的实施方式有关的半导体装置1，包括：含有布线图案22的布线基板20。半导体装置1，包括装配在布线基板20上的、形成多个第一焊盘14的第一半导体芯片10。半导体装置1，包括布线图案22与各第一焊盘14之间分别进行电连接的导线30。半导体装置1，包括与第一焊盘14的至少一部分隔开一定间隔重叠搭载在第一半导体芯片10之上、形成多个第二焊盘54的第二半导体芯片50。半导体装置1，包括形成于第一半导体芯片10和第二半导体芯片50之间，固定第一半导体芯片10和第二半导体芯片50的隔离层60。隔离层60，可形成于第二焊盘54的下方，更向外延伸到外侧处。然后，导线30的最高部位被设置装配在隔离层60的外侧。换言之，导线30被设置为从隔离层60向斜上方凸出。而且，半导体装置1，包括从半导体装置制造方法的说明内容中能够导出的任何一种结构。
如上所述，与适用本发明的实施方式有关的半导体装置1，包括形成于第二焊盘54的下方，更向外延伸到外侧处的隔离层60。因此，第二半导体焊盘50在宽大的区域上得到隔离层60的支撑。因此，即使是在第二半导体芯片50上施加外力的情况下，第二半导体芯片50也不易破损，因此可制造出高可靠性的半导体装置。而且，导线30的最高部位被设置在隔离层60的外侧。换言之，导线30被设置为从隔离层60向斜上方凸出。如果这样，在第一半导体芯片10上的空间中，可降低导线30的高度。由此，可减薄隔离层60的厚度，可制造出具有优良装配性的半导体装置。而且，此时，导线30，其最高部位被设置在第一半导体芯片10的外侧。换言之，设置导线30以从第一半导体芯片10上的空间向斜上方凸出。由此，可以得到同样的效果。图8表示装配有与适用本发明的实施方式有关的半导体装置1的电路基板1000。另外，作为含有半导体装置1的电子设备，分别为图9所示的笔记本型个人计算机2000、图10所示的移动电话机3000。
(变形例)
本发明，并不仅限于上述实施方式，可能有多种变形。例如，半导体装置的制造方法，包括：使树脂浆40从第一半导体芯片10流到布线基板20上，在第一半导体芯片10的周围形成边缘带65(参见图11B)。也可以在设置树脂浆40的工序中，只在第一半导体芯片10上设置树脂浆40(参见图3)，在搭载第二半导体芯片50的工序中，使树脂浆40流到布线基板20上以搭载第二半导体芯片50(参见图11A)。但与此不同，也可在设置树脂浆40的工序中，以从第一半导体芯片10流到布线基板20上的形式来设置树脂浆40。使树脂浆40固化，形成隔离层60及边缘带65(参见图11B)。此时，边缘带65，被配置在布线基板20上的半导体芯片10的周围。而且，边缘带65及隔离层60是用相同材料形成的。依据本变形例，由于边缘带65使第一半导体芯片10得到保护，因此可制造出更高可靠性的半导体装置。特别是，在对抗外来压力方面可制造出高可靠性半导体装置。另外，依据在此说明的方法，由于形成边缘带65的工序不需要通过其它途径另行设置，因此制造半导体装置的效率得以提高。
在图12A及图12B所示的变形例中，利用了内部含有绝缘性球状体82的树脂浆80。即，将内部含有绝缘性球状体82的树脂浆80设置在第一半导体芯片10之上(参见图12A)，然后，在第一半导体芯片10上搭载第二半导体芯片50，绝缘性球状体82介于第一半导体芯片10及第二半导体芯片50之间。待其固化后，可形成内部含有多个绝缘性球状体82的隔离层85(参见图12B)，如果这样，由于第二半导体芯片50的配置受到绝缘性球状体82的限制，可以很方便地装配第二半导体芯片50。
在图13A及图13中所示的变形例中，首先将导线30与第一焊盘14进行电连接(参见图13A)，然后，导线30与布线图案22进行电连接(参见图13B)，以此来设置导线30。即使是这种场合，导线30的最高部位可以被设置在第一半导体芯片10的外侧，因此能够降低第一半导体芯片10上导线30的高度。而且，由于导线30向斜上方伸出，其不会被设置成急剧的屈折。因此，就会减轻对导线30的损坏，可提供更高可靠性的半导体装置。
在这些变形例中，对于特别说明的事项以外的结构及其制造方法，均可适用于上述实施方式中所说明的内容。而且，与适用本发明的实施方式有关的半导体装置结构，也包括将以上所列举的任何内容所组合成的结构。
另外，本发明并不仅限于上述实施方式，还可能有多种变形。例如，本发明，包括与在实施方式中说明的结构实质上相同的结构(例如，功能、方法以及结果相同的结构，或者是目的以及效果相同的结构)。还有，本发明包括对在实施方式中说明的结构的非本质部分置换后的结构。还有，本发明包括起到和在实施方式中说明的结构相同的作用效果的结构，或者可以达到相同目的的结构。还有，本发明包括在实施方式中说明的结构上添加了公知技术的结构。

Claims (13)

1、一种半导体装置的制造方法，其特征在于，包括：
准备搭载了形成有多个第一焊盘的第一半导体芯片并具有布线图案的布线基板的工序；
将各所述第一焊盘与所述布线图案采用导线进行电连接的工序；
在所述第一半导体芯片上设置树脂浆的工序；
将形成有多个第二焊盘的第二半导体芯片，按照与所述第一焊盘的至少一部分隔开间隔而重叠的方式，通过介入所述树脂浆后搭载在所述第一半导体芯片上的工序；以及
让所述树脂浆固化，在所述第一半导体芯片和所述第二半导体芯片之间形成隔离层，将所述第一以及第二半导体芯片固定的工序；所述隔离层在所述第二焊盘之下形成并直到外侧；
所述导线按照其最高部位配置在所述第一半导体芯片外侧的方式进行设置。
2、一种半导体装置的制造方法，其特征在于，包括：
准备搭载了形成有多个第一焊盘的第一半导体芯片并具有布线图案的布线基板的工序；
将各所述第一焊盘与所述布线图案采用导线进行电连接的工序；
在所述第一半导体芯片上设置树脂浆的工序；
将形成有多个第二焊盘的第二半导体芯片，按照与所述第一焊盘的至少一部分隔开间隔而重叠的方式，通过介入所述树脂浆后搭载在所述第一半导体芯片上的工序；以及
让所述树脂浆固化，在所述第一半导体芯片和所述第二半导体芯片之间形成隔离层，将所述第一以及第二半导体芯片固定的工序；
所述隔离层在所述第二焊盘之下形成并直到外侧；
所述导线按照从所述第一半导体芯片上的空间向斜上方凸出的方式进行设置。
3、根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
进一步包括使所述树脂浆从第一半导体芯片流至所述布线基板上，在所述第一半导体芯片的周围形成边缘带的工序。
4、根据权利要求3所述的半导体装置的制造方法，其特征在于，
在设置所述树脂浆的工序中，仅在所述第一半导体芯片上设置所述树脂浆；
在搭载所述第二半导体芯片的工序中，按照让所述树脂浆流出到所述布线基板上的方式搭载所述第二半导体芯片。
5、根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
所述树脂浆，在其内部含有多个绝缘性球状体，将这些球状体置于所述第一及第二半导体芯片之间。
6、根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
采用所述导线进行电连接的工序包括：
将所述导线与所述布线图案电连接的工序；以及之后
将所述导线与所述第一焊盘电连接的工序。
7、根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
采用所述导线进行电连接的工序包括：
将所述导线与所述第一焊盘电连接的工序；以及之后
将所述导线与所述布线图案电连接的工序。
8、根据权利要求1或2所述的半导体装置的制造方法，其特征在于，
在固化所述树脂浆的工序之后，进一步包括采用其它导线将所述第二焊盘与所述布线图案电连接的工序。
9、一种半导体装置，其特征在于，包括：
布线基板，其形成有布线图案；
第一半导体芯片，搭载在所述布线基板上，形成有多个第一焊盘；
导线，其将所述布线图案与各所述第一焊盘分别电连接；
第二半导体芯片，其按照与所述第一焊盘隔开间隔而重叠的方式被搭载在所述第一半导体芯片上，形成有多个第二焊盘；
隔离层，其被形成在所述第一半导体芯片和所述第二半导体芯片之间，固定所述第一以及第二半导体芯片；
所述隔离层在所述第二焊盘之下形成并直到外侧；
所述导线按照其最高部位配置在所述隔离层的外侧的方式进行设置。
10、一种半导体装置，其特征在于，包括：
布线基板，其形成有布线图案；
第一半导体芯片，搭载在所述布线基板上，形成有多个第一焊盘；
导线，其将所述布线图案与各所述第一焊盘分别电连接；
第二半导体芯片，其按照与所述第一焊盘隔开间隔而重叠的方式被搭载在所述第一半导体芯片上，形成有多个第二焊盘；
隔离层，其被形成在所述第一半导体芯片和所述第二半导体芯片之间，固定所述第一以及第二半导体芯片；
所述隔离层在所述第二焊盘之下形成并直到外侧；
所述导线按照从所述隔离层向斜上方凸出的方式进行设置。
11、根据权利要求9或10所述的半导体装置，其特征在于，
在所述布线基板上进一步具有配置在所述第一半导体芯片周围的边缘带。
12、根据权利要求11所述的半导体装置，其特征在于，
所述隔离层与所述边缘带是相同的材料。
13、根据权利要求9或10所述的半导体装置，其特征在于，
所述隔离层，在其内部具有绝缘性球状体。
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