CN1568542A - 热界面材料和具有此热界面材料的电子组件 - Google Patents

热界面材料和具有此热界面材料的电子组件 Download PDF

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Publication number
CN1568542A
CN1568542A CNA028202899A CN02820289A CN1568542A CN 1568542 A CN1568542 A CN 1568542A CN A028202899 A CNA028202899 A CN A028202899A CN 02820289 A CN02820289 A CN 02820289A CN 1568542 A CN1568542 A CN 1568542A
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thermal interfacial
semiconductor particles
interfacial material
filler grain
melt temperature
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克里斯托弗·鲁默
保罗·柯宁
赛库马尔·贾扬拉曼
阿沙耶·达尼
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Intel Corp
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Intel Corp
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Publication of CN1568542A publication Critical patent/CN1568542A/zh
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Abstract

本发明描述了一种用于将电子部件热耦合到导热构件的热界面材料。该热界面材料包括粘弹性聚合物基体材料、处于基体材料中的可熔焊料粒子以及处于基体材料中的填料粒子。焊料粒子的熔融温度低于选定的温度(例如对于铟的157℃)，填料粒子的熔融温度明显高于选定的温度(例如对于银的961℃)。在不利的热和应力条件下，填料粒子保持所述热界面材料的完整性。

Description

热界面材料和具有此热界面材料的电子组件
技术领域
本发明涉及用于将电子部件热耦合到导热构件的热界面材料，并涉及具有此热界面材料的电子组件。
背景技术
集成电路被制造在半导体晶片上，所述半导体晶片随后被切割或“划片”成单个的管芯。这样的管芯在集成电路上具有焊块(solder bump)接触。焊块接触被朝下置于封装衬底的接触盘(contact pad)上。通过焊块接触，可以向集成电路和从集成电路提供电子信号。
集成电路的运行使其发热。热被传导至此管芯的上表面，并且必须通过传导或对流将热带走，以便为了维持集成电路的功能完整性的目的而使集成电路的温度保持在预定水平之下。
通常将散热器置于管芯上方，并且通过诸如导热油脂之类的流体热界面材料使散热器热耦合到管芯上。但是，导热油脂仅仅具有中等的导热性，因此对从管芯到散热器的热传递设置了明显的热障碍。
附图说明
参照附图，通过示例来描述本发明，其中：
图1是其中热界面材料位于电子部件和导热构件之间的横截面图；
图2是在加热并随后冷却热界面材料导致其焊料粒子熔融以及团聚之后类似于图1的视图；
图3是包含热界面材料的电子组件的横截面图；以及
图4是图示了热界面材料的固化和回流温度曲线的示例的温度对时间的曲线图。
具体实施方式
概述
附图中的图1示出了热界面材料，所述热界面材料被插入电子部件12和导热构件14之间，并用于将电子部件12热耦合到导热构件14上。热界面材料10包含粘弹性聚合物基体材料16、基体材料16中的可熔焊料粒子18以及基体材料16中的填料粒子20。焊料粒子18的熔融温度低于选定的温度，并且填料粒子20的熔融温度高于选定的温度。当使温度升高到选定温度以上时，焊料粒子18将因此熔化，但填料粒子20将不会熔化。
基体材料16可以占热界面材料10重量的1％至20％，并优选占重量的约8％。
基体材料16可以是硅氧烷、氨基环氧、丙烯酸酯或烯烃树脂、低粘度乙烯树脂或相变材料，并且优选硅氧烷。
焊料粒子18可以占热界面材料10重量的1％至99％，优选占重量的至少5％，并且更加优选的是占重量的25％至90％。
焊料粒子18优选具有60℃至300℃的熔融温度。焊料粒子18可以由诸如熔融温度为157℃的铟(In)之类的纯焊料组分制成，或者可以由焊料合金制成，所述焊料合金诸如为低共熔温度为118℃的铟锡(InSn)、低共熔温度为139℃的铟银(InAg)、低共熔温度为217℃的锡银铜(SnAgCu)或者锡银(SnAg)、低共熔温度为203℃的锡铋(SnBi)、熔融温度为60℃至140℃的铟锡铋(InSnBi)或者熔融温度为145℃至165℃的铟钛(InTi)、铟锆(InZr)、铟钛铈硒(InTiCeSe)、铟银钛铈硒(InAgTiSeCe)等。
焊料粒子18可以具有0.2至100微米的直径。焊料粒子18可以是精细粒子和粗粒子的混合物。
填料粒子20可以占热界面材料10重量的1％至95％，更优选的是占其重量的至少10％。
焊料粒子18和填料粒子20加在一起优选占热界面材料10重量的50％至99％，更优选的是占其重量的约92％。
填料粒子20(或者是可熔的、不可熔的，或者是陶瓷粒子)优选具有350℃以上的熔融温度，更加优选的是具有800℃至1200℃的熔融温度。填料粒子20优选具有比焊料粒子18的熔融温度高至少100℃的熔融温度，更优选的是具有比焊料粒子18的熔融温度高至少200℃的熔融温度。填料粒子20可以是熔融温度为1084℃的铜(Cu)、镍(Ni)、熔融温度为961℃的银(Ag)、银铜(Ag/Cu)、锡(Sn)和石墨，并且优选熔融温度为660℃的铝(Al)。不可熔填料的示例是氮化硼、氮化铝、碳化硅、氧化铝、石墨、碳纤维、碳纳米管或金刚石。
包括有电子部件12、导热构件14和热界面材料10的整个组件被置入加热炉，所述加热炉将组件从室温加热到焊料粒子18熔融以上的温度。如图2所示，焊料粒子18熔化并团聚在一起。焊料粒子18中的精细粒子引发团聚。但是，组件被加热到达的温度被维持在填料粒子20发生熔融的温度以下。组件随后被冷却至焊料粒子18熔融温度以下的温度，因此使它们凝固。
将温度进一步降低至高于室温的选定温度，在所述选定温度下基体材料16发生固化。在基体材料16固化的同时，基体材料16的聚合物链之间发生交联以提高其粘弹性。基体材料16可以是诸如相变材料之类的不可固化树脂，所述相变材料在室温下结晶并由此发生凝固。
随后将温度进一步降低至室温。在所得到的结构中，焊料粒子18团聚在一起，并具有与电子部件12和导热构件14两者都接触的大的表面积，以便提供一连续的通路，其中通过该连续的通路，热可以从电子部件12通过目前固结的焊料粒子18传导至导热构件14。基体材料16具有吸收材料上的应力的能力。但是，在没有填料粒子20的情况下，热界面材料10在热循环期间和/或当暴露于高湿度下时，可能往往会从电子部件12和导热构件14之间流出。填料粒子20提供了必要的强度，以防止热界面材料10在这样的条件下从电子部件12和导热构件14之间流出。填料粒子20因此在不利的应力和热条件中保持了热界面材料10的完整性。
图3图示了包括有电子部件12、导热构件14和热界面材料10的组件30。电子部件12为半导体管芯(此后称为“管芯12”)，所述管芯12具有形成在其下表面中和之上的集成电路。焊块接触32被形成在集成电路上。组件30还包括封装衬底34，所述封装衬底34在其上表面上具有接触盘(没有示出)。将每个接触32置于相应的接触盘上。随后封装衬底34和管芯12的结合件被放入加热炉中以使接触32熔融，然后进行冷却以使接触32将管芯12固定到封装衬底34上。
导热构件14由金属或陶瓷制成，并形成金属封盖(cap)的一部分，所述金属封盖具有若干侧边36，所述侧边36从导热构件14的边缘，经过管芯12向下延伸到衬底34。当封盖被置于管芯12上方时，热界面材料10具有如图1所示的形式。只有这时，组件被置于加热炉中以将热界面材料10转变成图2中所示出的形式。
示例
现在提供热界面材料10的一个示例。
基体材料16是占热界面材料10重量8％的硅氧烷。焊料材料18是占热界面材料10重量77％的铟。铟的熔融温度为157℃，并且当在157℃以上的温度下熔融时，不会与硅氧烷发生反应。填料粒子20由铝制成，占热界面材料10重量的15％。焊料粒子18和填料粒子20因此约占热界面材料10重量的92％。铝的熔融温度约为1200℃。填料粒子20因此在比焊料粒子18的熔融温度高1043℃的温度下熔融。
管芯12产生热，并且热通过焊料粒子18被传递至导热构件14。管芯12和导热构件14之间的热膨胀差异导致所述材料上的应力，所述应力基本上被粘弹性基体材料16吸收。
图4图示了硅氧烷/铟/铝组合物的热循环。将组合物从约30℃的室温加热至约170℃，170℃高于铟的熔融温度，因此铟焊料粒子18熔融。将组合物在170℃下保持约2分钟，也就是说，直到发生充分的团聚为止。然后将组合物冷却至约为125℃的温度，所述125℃的温度低于焊料材料的熔点，而焊料粒子发生凝固。硅氧烷聚合物在125℃下固化约1小时。可以改变固化时间和温度，并且固化时间和温度彼此是相关的。
虽然已经描述并在附图中示出了特定的示例性实施例，但是应该理解，这样的实施例仅仅是说明而不是限制本发明，并且由于本领域技术人员可以想到各种修改，所以本发明不限于具体的构造和排列。

Claims (30)

1.一种用于将电子部件热耦合到导热构件的热界面材料，包含：
粘弹性聚合物基体材料；和
处于所述基体材料中的可熔焊料粒子，所述可熔焊料粒子的熔融温度低于选定的温度。
2.如权利要求1所述的热界面材料，其中所述基体材料占重量的1％至20％。
3.如权利要求2所述的热界面材料，其中所述基体材料约占重量的8％。
4.如权利要求1所述的热界面材料，其中所述基体材料选自由硅氧烷，氨基环氧，以及丙烯酸酯，烯烃树脂，低粘度乙烯树脂或相变材料组成的组。
5.如权利要求4所述的热界面材料，其中所述基体材料是硅氧烷。
6.如权利要求5所述的热界面材料，其中所述焊料粒子占重量的1％至99％。
7.如权利要求6所述的热界面材料，其中所述焊料粒子占重量的至少5％。
8.如权利要求7所述的热界面材料，其中所述焊料粒子占重量的25％至90％。
9.如权利要求1所述的热界面材料，其中所述焊料粒子选自由In、InSn、InAg、SnAg、SnAgCu、SnBi、InSnBi、InTi、InZr、InTiCeSe和InAgTiSeCe组成的组。
10.如权利要求1所述的热界面材料，其中所述基体材料是硅氧烷，并且当所述焊料粒子熔融时，基本上不与硅氧烷发生反应。
11.如权利要求1所述的热界面材料，其中所述焊料粒子的熔融温度为60℃至300℃。
12.如权利要求11所述的热界面材料，其中所述焊料粒子具有约157℃的熔融温度。
13.如权利要求1所述的热界面材料，其中所述焊料粒子的宽度为0.2微米至100微米。
14.如权利要求1所述的热界面材料，还包括：
处于所述基体材料中的填料粒子，所述填料粒子的熔融温度高于所述选定的温度。
15.如权利要求14所述的热界面材料，其中所述填料粒子占所述热界面材料重量的1％至95％。
16.如权利要求15所述的热界面材料，其中所述填料粒子占重量的至少10％。
17.如权利要求16所述的热界面材料，其中所述填料粒子占重量的约15％。
18.如权利要求16所述的热界面材料，其中所述焊料粒子和所述填料粒子占重量的50％至95％。
19.如权利要求18所述的热界面材料，其中所述焊料粒子和所述填料粒子占重量的约92％。
20.如权利要求16所述的热界面材料，其中所述填料粒子选自由Ni、Cu、Ag、Ag/Cu、Sn、石墨和Al组成的组。
21.如权利要求20所述的热界面材料，其中所述填料粒子是铝。
22.如权利要求16所述的热界面材料，其中所述填料粒子的熔融温度高于350℃。
23.如权利要求16所述的热界面材料，其中所述填料粒子的熔融温度比所述焊料粒子的熔融温度高出至少100℃。
24.如权利要求16所述的热界面材料，其中所述填料粒子的熔融温度比所述焊料粒子的熔融温度高出至少200℃。
25.一种用于将电子部件热耦合到导热构件的热界面材料，包含：
粘弹性聚合物基体材料；
处于所述基体材料中的可熔焊料粒子，所述可熔焊料粒子的熔融温度低于200℃，并且当所述焊料粒子熔融时基本上不与所述基体材料发生反应；和
处于所述基体材料中的填料粒子，所述填料粒子的熔融温度高于400℃。
26.如权利要求25所述的热界面材料，其中所述基体材料是硅氧烷。
27.如权利要求26所述的热界面材料，其中所述填料粒子是铝。
28.一种电子组件，包括：
电子部件，所述电子部件当工作时产生热；
导热构件，所述导热构件与所述电子部件隔开；和
处于所述电子部件和所述导热构件之间的热界面材料，所述热界面材料包括粘弹性聚合物基体材料、焊料粒子以及处在所述基体材料中的填料粒子，所述焊料粒子被熔化在一起，以便为从所述电子部件和导热构件的热传导提供连续的热通路，并且所述焊料粒子的熔融温度低于选定的温度，所述填料粒子的熔融温度高于所述选定的温度。
29.如权利要求28所述的电子组件，其中所述填料粒子的熔融温度比所述焊料粒子的熔融温度高出至少100℃
30.如权利要求29所述的电子组件，其中，填料粒子中的至少一个与所述焊料粒子中的一个接触，并被所述焊料粒子中的一个完全包围。
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1978580B (zh) * 2005-12-09 2010-09-29 富准精密工业(深圳)有限公司 导热膏及使用该导热膏的电子装置
CN1959392B (zh) * 2005-11-04 2010-11-10 鸿富锦精密工业（深圳）有限公司 测量导热片随温度变化其结构变化状况的装置及方法
US7886813B2 (en) 2005-06-29 2011-02-15 Intel Corporation Thermal interface material with carbon nanotubes and particles
CN101906288B (zh) * 2009-06-02 2013-08-21 清华大学 热界面材料,具该热界面材料的电子装置及制备方法
CN103476578A (zh) * 2011-02-24 2013-12-25 东丽株式会社 强化界面相及其接合结构物
CN101803010B (zh) * 2007-09-11 2014-01-29 陶氏康宁公司 热界面材料，包含该热界面材料的电子器件和其制备和使用的方法
CN105261600A (zh) * 2014-07-08 2016-01-20 英飞凌科技股份有限公司 导电元件、包含导电元件的功率半导体器件及制备方法
JP2017212253A (ja) * 2016-05-23 2017-11-30 三菱電機株式会社 放熱シートおよび半導体装置
CN112201435A (zh) * 2016-07-26 2021-01-08 三星电机株式会社 线圈组件及制造线圈组件的方法
CN112708400A (zh) * 2020-12-17 2021-04-27 上海先方半导体有限公司 一种热界面材料及其制造方法

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921462B2 (en) 2001-12-17 2005-07-26 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
US6946190B2 (en) * 2002-02-06 2005-09-20 Parker-Hannifin Corporation Thermal management materials
US7846778B2 (en) * 2002-02-08 2010-12-07 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US7473995B2 (en) * 2002-03-25 2009-01-06 Intel Corporation Integrated heat spreader, heat sink or heat pipe with pre-attached phase change thermal interface material and method of making an electronic assembly
US6703128B2 (en) * 2002-02-15 2004-03-09 Delphi Technologies, Inc. Thermally-capacitive phase change encapsulant for electronic devices
US7436058B2 (en) * 2002-05-09 2008-10-14 Intel Corporation Reactive solder material
US7252877B2 (en) * 2003-02-04 2007-08-07 Intel Corporation Polymer matrices for polymer solder hybrid materials
DE10327530A1 (de) * 2003-06-17 2005-01-20 Electrovac Gesmbh Vorrichtung mit wenigstens einer von einem zu kühlenden Funktionselement gebildeten Wärmequelle, mit wenigstens einer Wärmesenke und mit wenigstens einer Zwischenlage aus einer thermischen leitenden Masse zwischen der Wärmequelle und der Wärmesenke sowie thermische leitende Masse, insbesondere zur Verwendung bei einer solchen Vorrichtung
US7014093B2 (en) * 2003-06-26 2006-03-21 Intel Corporation Multi-layer polymer-solder hybrid thermal interface material for integrated heat spreader and method of making same
US7481267B2 (en) * 2003-06-26 2009-01-27 The Regents Of The University Of California Anisotropic thermal and electrical applications of composites of ceramics and carbon nanotubes
US6976532B2 (en) * 2003-06-26 2005-12-20 The Regents Of The University Of California Anisotropic thermal applications of composites of ceramics and carbon nanotubes
WO2005052179A2 (en) 2003-08-13 2005-06-09 The Johns Hopkins University Method of making carbon nanotube arrays, and thermal interfaces using same
US7550097B2 (en) * 2003-09-03 2009-06-23 Momentive Performance Materials, Inc. Thermal conductive material utilizing electrically conductive nanoparticles
US20050089638A1 (en) * 2003-09-16 2005-04-28 Koila, Inc. Nano-material thermal and electrical contact system
DE602004023360D1 (de) * 2003-10-17 2009-11-12 Sumitomo Rubber Ind Verfahren zur Simulation von viskoelastischem Material
US7180174B2 (en) * 2003-12-30 2007-02-20 Intel Corporation Nanotube modified solder thermal intermediate structure, systems, and methods
US7456052B2 (en) * 2003-12-30 2008-11-25 Intel Corporation Thermal intermediate apparatus, systems, and methods
US7347354B2 (en) * 2004-03-23 2008-03-25 Intel Corporation Metallic solder thermal interface material layer and application of the same
US20050228097A1 (en) * 2004-03-30 2005-10-13 General Electric Company Thermally conductive compositions and methods of making thereof
US7498376B2 (en) * 2004-06-23 2009-03-03 Delphi Technologies, Inc. Thermal transient suppression material and method of production
KR20070049169A (ko) * 2004-08-25 2007-05-10 마츠시타 덴끼 산교 가부시키가이샤 땜납 조성물, 납땜 접합 방법, 및 납땜 접합 구조
JP4784743B2 (ja) * 2005-02-14 2011-10-05 信越化学工業株式会社 硬化性パーフルオロポリエーテル組成物、その硬化物を用いたゴム及びゲル製品
US8092910B2 (en) * 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
JP5241242B2 (ja) * 2005-02-16 2013-07-17 ダウ・コーニング・コーポレイション 強化シリコーン樹脂フィルムおよびその製造方法
JP2007005670A (ja) * 2005-06-27 2007-01-11 Fujitsu Ltd 電子部品パッケージおよび接合組立体
CN101238181B (zh) * 2005-08-04 2011-10-05 陶氏康宁公司 增强的有机硅树脂膜及其制备方法
CN100528315C (zh) * 2005-10-11 2009-08-19 鸿富锦精密工业（深圳）有限公司 热界面材料混合装置
CN1962067B (zh) * 2005-11-10 2010-04-14 鸿富锦精密工业（深圳）有限公司 碾磨设备
US20070145097A1 (en) * 2005-12-20 2007-06-28 Intel Corporation Carbon nanotubes solder composite for high performance interconnect
EP1969065B1 (en) * 2005-12-21 2011-07-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
JP5543111B2 (ja) * 2006-01-19 2014-07-09 ダウ・コーニング・コーポレイション 自立性シリコーン樹脂フィルム、その調製方法、及び自立性シリコーン樹脂フィルム用ナノ材料充填シリコーン組成物
US20090005499A1 (en) * 2006-02-02 2009-01-01 Mark Fisher Silicone Resin Film, Method of Preparing Same, and Nanomaterial-Filled Silicone Composition
US8084097B2 (en) * 2006-02-20 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US7534649B2 (en) * 2006-05-12 2009-05-19 Intel Corporation Thermoset polyimides for microelectronic applications
US20070284730A1 (en) * 2006-06-12 2007-12-13 Wei Shi Method, apparatus, and system for thin die thin thermal interface material in integrated circuit packages
WO2008000551A2 (de) * 2006-06-27 2008-01-03 Continental Automotive Gmbh Kühlkörper
US20080023665A1 (en) * 2006-07-25 2008-01-31 Weiser Martin W Thermal interconnect and interface materials, methods of production and uses thereof
EP2066757A1 (en) * 2006-10-05 2009-06-10 Dow Corning Corporation Silicone resin film and method of preparing same
US20100112321A1 (en) * 2007-02-06 2010-05-06 Dow Corning Corporation Silicone Resin, Silicone Composition, Coated Substrate, and Reinforced Silicone Resin Film
EP2117836B1 (en) * 2007-02-22 2012-11-07 Dow Corning Corporation Reinforced silicone resin films
WO2008103229A1 (en) * 2007-02-22 2008-08-28 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
WO2008103226A1 (en) * 2007-02-22 2008-08-28 Dow Corning Corporation Reinforced silicone resin films
US7898076B2 (en) * 2007-04-30 2011-03-01 International Business Machines Corporation Structure and methods of processing for solder thermal interface materials for chip cooling
WO2008134241A1 (en) * 2007-05-01 2008-11-06 Dow Corining Corporation Nanomaterial-filled silicone composition and reinforced silicone resin film
EP2142589A2 (en) * 2007-05-01 2010-01-13 Dow Corning Corporation Reinforced silicone resin film
US20100328895A1 (en) * 2007-09-11 2010-12-30 Dorab Bhagwagar Composite, Thermal Interface Material Containing the Composite, and Methods for Their Preparation and Use
KR20100070349A (ko) * 2007-10-12 2010-06-25 다우 코닝 코포레이션 강화 실리콘 수지 필름 및 나노섬유-충전된 실리콘 조성물
US8919428B2 (en) * 2007-10-17 2014-12-30 Purdue Research Foundation Methods for attaching carbon nanotubes to a carbon substrate
US9795059B2 (en) * 2007-11-05 2017-10-17 Laird Technologies, Inc. Thermal interface materials with thin film or metallization
US20090166852A1 (en) * 2007-12-31 2009-07-02 Chuan Hu Semiconductor packages with thermal interface materials
US7956456B2 (en) * 2008-02-27 2011-06-07 Texas Instruments Incorporated Thermal interface material design for enhanced thermal performance and improved package structural integrity
WO2009131913A2 (en) * 2008-04-21 2009-10-29 Honeywell International Inc. Thermal interconnect and interface materials, methods of production and uses thereof
US20090321922A1 (en) * 2008-06-30 2009-12-31 Ravi Shankar Self-healing thermal interface materials for semiconductor packages
CN101760035B (zh) * 2008-12-24 2016-06-08 清华大学 热界面材料及该热界面材料的使用方法
US8541058B2 (en) * 2009-03-06 2013-09-24 Timothy S. Fisher Palladium thiolate bonding of carbon nanotubes
CN101899288B (zh) * 2009-05-27 2012-11-21 清华大学 热界面材料及其制备方法
CN102656247B (zh) 2009-10-27 2014-11-26 汉高公司 包含环氧化坚果壳油的导热界面材料
CN101871635A (zh) * 2010-06-23 2010-10-27 浙江晶皓光电科技有限公司 一种用于led灯具的导热介质的填充及制作方法
EP2698591A4 (en) * 2011-04-12 2014-11-05 Ngk Insulators Ltd HEAT FLOW SWITCH
US9465049B2 (en) * 2012-04-13 2016-10-11 James B. Colvin Apparatus and method for electronic sample preparation
WO2014150302A1 (en) 2013-03-14 2014-09-25 Dow Corning Corporation Conductive silicone materials and uses
EP2970728A1 (en) 2013-03-14 2016-01-20 Dow Corning Corporation Curable silicone compositions, electrically conductive silicone adhesives, methods of making and using same, and electrical devices containing same
CN104766845B (zh) * 2014-01-07 2017-11-14 恩特日安 传热结构及其制造方法
US9318450B1 (en) * 2014-11-24 2016-04-19 Raytheon Company Patterned conductive epoxy heat-sink attachment in a monolithic microwave integrated circuit (MMIC)
DE102015118245B4 (de) * 2015-10-26 2024-10-10 Infineon Technologies Austria Ag Elektronische Komponente mit einem thermischen Schnittstellenmaterial, Herstellungsverfahren für eine elektronische Komponente, Wärmeabfuhrkörper mit einem thermischen Schnittstellenmaterial und thermisches Schnittstellenmaterial
US11791237B2 (en) 2018-06-27 2023-10-17 Intel Corporation Microelectronic assemblies including a thermal interface material
US11581239B2 (en) * 2019-01-18 2023-02-14 Indium Corporation Lead-free solder paste as thermal interface material
US20200357764A1 (en) * 2019-05-08 2020-11-12 Intel Corporation Solder thermal interface material (stim) with dopant
US11682605B2 (en) 2019-05-28 2023-06-20 Intel Corporation Integrated circuit packages with asymmetric adhesion material regions
US11670569B2 (en) 2019-06-11 2023-06-06 Intel Corporation Channeled lids for integrated circuit packages

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480488A1 (fr) * 1980-04-15 1981-10-16 Eaton Manford Liant thermiquement conducteur et isolant electriquement pour composants electriques et electroniques, et son procede de fabrication
US5062896A (en) * 1990-03-30 1991-11-05 International Business Machines Corporation Solder/polymer composite paste and method
JPH0853664A (ja) * 1994-08-10 1996-02-27 Fujitsu Ltd 熱伝導材料及びその製造方法、電子部品の冷却方法、回路基板の冷却方法、並びに電子部品の実装方法
EP0790762B1 (en) 1996-01-30 2003-10-08 Parker Hannifin Corporation Conductive cooling of a heat-generating electronic component
US5738936A (en) * 1996-06-27 1998-04-14 W. L. Gore & Associates, Inc. Thermally conductive polytetrafluoroethylene article
JP2001503471A (ja) * 1997-02-07 2001-03-13 ロックタイト コーポレーション 伝導性樹脂組成物
US6114413A (en) * 1997-07-10 2000-09-05 International Business Machines Corporation Thermally conducting materials and applications for microelectronic packaging
US5945217A (en) * 1997-10-14 1999-08-31 Gore Enterprise Holdings, Inc. Thermally conductive polytrafluoroethylene article
CN1273993C (zh) * 1998-08-28 2006-09-06 松下电器产业株式会社 导电粘结结构，含该结构的制品及其制造方法
US6165612A (en) * 1999-05-14 2000-12-26 The Bergquist Company Thermally conductive interface layers
DE10009678C1 (de) * 2000-02-29 2001-07-19 Siemens Ag Wärmeleitende Klebstoffverbindung und Verfahren zum Herstellen einer wärmeleitenden Klebstoffverbindung
EP1143511B1 (en) 2000-04-05 2008-01-02 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
US6339120B1 (en) 2000-04-05 2002-01-15 The Bergquist Company Method of preparing thermally conductive compounds by liquid metal bridged particle clusters
US6813153B2 (en) * 2002-09-18 2004-11-02 Intel Corporation Polymer solder hybrid

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7886813B2 (en) 2005-06-29 2011-02-15 Intel Corporation Thermal interface material with carbon nanotubes and particles
CN101248154B (zh) * 2005-06-29 2014-06-25 英特尔公司 热界面材料及方法
CN1959392B (zh) * 2005-11-04 2010-11-10 鸿富锦精密工业（深圳）有限公司 测量导热片随温度变化其结构变化状况的装置及方法
CN1978580B (zh) * 2005-12-09 2010-09-29 富准精密工业(深圳)有限公司 导热膏及使用该导热膏的电子装置
CN101803010B (zh) * 2007-09-11 2014-01-29 陶氏康宁公司 热界面材料，包含该热界面材料的电子器件和其制备和使用的方法
CN101906288B (zh) * 2009-06-02 2013-08-21 清华大学 热界面材料,具该热界面材料的电子装置及制备方法
CN103476578A (zh) * 2011-02-24 2013-12-25 东丽株式会社 强化界面相及其接合结构物
CN103476578B (zh) * 2011-02-24 2016-06-15 东丽株式会社 强化界面相及其接合结构物
CN105261600A (zh) * 2014-07-08 2016-01-20 英飞凌科技股份有限公司 导电元件、包含导电元件的功率半导体器件及制备方法
US9812376B2 (en) 2014-07-08 2017-11-07 Infineon Technologies Ag Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device
CN105261600B (zh) * 2014-07-08 2018-10-12 英飞凌科技股份有限公司 导电元件、包含导电元件的功率半导体器件及制备方法
JP2017212253A (ja) * 2016-05-23 2017-11-30 三菱電機株式会社 放熱シートおよび半導体装置
CN112201435A (zh) * 2016-07-26 2021-01-08 三星电机株式会社 线圈组件及制造线圈组件的方法
CN112201435B (zh) * 2016-07-26 2022-07-01 三星电机株式会社 线圈组件及制造线圈组件的方法
CN112708400A (zh) * 2020-12-17 2021-04-27 上海先方半导体有限公司 一种热界面材料及其制造方法

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