CN101248154B - 热界面材料及方法 - Google Patents

热界面材料及方法 Download PDF

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CN101248154B
CN101248154B CN200680023309.6A CN200680023309A CN101248154B CN 101248154 B CN101248154 B CN 101248154B CN 200680023309 A CN200680023309 A CN 200680023309A CN 101248154 B CN101248154 B CN 101248154B
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particle
heat conducting
substrate material
thermal conduction
heat
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CN101248154A (zh
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F·华
J·G·玛维蒂
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Intel Corp
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Abstract

提供了一种利用复合粒子的热界面材料。优点包括增加的热导率和诸如较低的粘性之类的改进的机械性质。在所选的实施例中，诸如金属粒子或碳纳米管等的自由粒子连同复合粒子一起被包含在热界面材料中。包括自由粒子连同复合粒子的优点包括在热界面材料的所选实施例中提高组装密度。

Description

热界面材料及方法
相关申请
本专利申请要求2005年6月29日提交的美国申请第11/169520号的优先权，其内容通过引用结合于此。
技术领域
本发明的实施例一般涉及传热的领域，本发明的某些方面尤其涉及电子设备的热管理。
背景
在电子系统领域中，制造商之间存在这持续不断的竞争压力以驱动其在提升其设备的性能的同时降低制造成本。这对于在IC中形成诸如晶体管之类的电子器件尤其正确，其中每一个新一代的IC必需提供增强的性能，尤其在增加的器件数量和较高的时钟频率方面，同时一般在尺寸上更小且更紧凑。因为IC的密度和时钟频率增加，它们因此生成较多的热量。然而，已知IC的性能和可靠性随着它们受到的温度升高而降低，所以从IC环境充分散热变得愈加重要。
随着高性能IC及其相关联的封装的出现，电子设备需要更加创新的热管理以散热。例如，一般随着处理器中增加的速度和功率而来的是微电子管芯中必需散逸增加的热量的“代价”。
附图简述
图1示出根据本发明的一个实施例的信息处理设备。
图2A示出根据本发明的一个实施例的IC封装。
图2B是根据本发明的一个实施例来自图2A的IC封装的等距视图。
图3示出根据本发明的一个实施例的热界面材料的一部分。
图4示出根据本发明的一个实施例的热界面粒子。
图5示出根据本发明的一个实施例的另一个热界面粒子。
图6示出根据本发明的一个实施例的方法。
详细描述
在以下本发明的详细描述中，参考了作为说明示出可实施本发明的具体实施例并构成本文的一部分的附图。附图中，类似的附图标记在各附图中描述基本类似的组件。足够详细地描述了这些实施例以使本领域的技术人员能够实施本发明。可利用其它的实施例，并且可在不背离本发明的精神和范围的情况下进行结构、机械和逻辑改变。因此，以下的详细描述不认为是限制的意思，且本发明的范围仅由所附权利要求书来限定。
将在本描述中使用的术语“有源侧”定义为：不管芯片或管芯的定向如何，其中一般已制造了电子器件的芯片或管芯的常规的水平、大型平面或表面。将在本说明书中使用的术语“背侧”定义为一般在其表面上不包含有源器件的芯片或管芯的常规的水平、大型平面或表面。术语“垂直”指的是与如上定义的水平相垂直的方向。诸如“在...上”、“高于”、“低于”、“以上”和“以下”之类的介词是关于芯片或管芯的有源侧上的常规的平面或表面定义的，而不管芯片或管芯的定向如何。
在一个实施例中，本发明用于传递由诸如晶体管之类的、通常包含在诸如处理器芯片之类的集成电路(IC)芯片上的电子器件或器件组生成的热量。
包括了利用处理器芯片的电子设备的一个例子以示出用于本发明的实施例的高层设备应用的例子。图1是电子设备100的框图，它结合了利用根据本发明的至少一个实施例的导热材料的至少一个电子组件110。电子设备100仅仅是可利用本发明的电子系统的一个例子。在该例子中，电子设备100包括数据处理系统，该系统包括用于耦合至该系统各组件的系统总线102。系统总线102在电子设备100的各组件之间提供通信链路并可被实现为单个总线、总线组合或以任意其它适当的方式实现。
电子组件110耦合到系统总线102。电子组件110可包括任意电路或电路的组合。在一个实施例中，电子组件110包括可以是任意类型的处理器112。正如本文所使用的，“处理器”表示任意类型的计算电路，诸如但不限于微处理器、微控制器、复杂指令集计算(CISC)微处理器、精简指令集计算(RISC)微处理器、超长指令字(VLIW)微处理器、图形处理器、数字信号处理器(DSP)或任意其它类型的处理器或处理电路。
可包含在电子组件110中的其它类型的电路是定制电路、专用集成电路(ASIC)等，例如在类似于移动电话、寻呼机、个人数据助理、便携计算机、双向无线电和类似的电子系统的无线设备中使用的一个或多个电路(诸如通信电路114)。IC可执行任何其它类型的功能。
电子设备100还可包括外部存储器120，该外部存储器120又可包括诸如以随机存取存储器(RAM)形式的主存储器122之类的适用于特定应用的一个或多个存储元件、一个或多个硬盘驱动器124和/或用于处理诸如紧致盘(CD)、数字视频盘(DVD)等可移动介质126的一个或多个驱动器。
电子设备100还包括显示设备116、一个或多个扬声器118及键盘和/或控制器130，控制器130可包括鼠标、跟踪球、游戏控制器、声音识别设备或允许系统用户向电子设备100输入信息或从中接收信息的任意其它的设备。
尽管发现本发明的实施例在从IC表面传热的方面是有效的，但本发明不限于从IC表面传热。本发明的实施例可用于将热量从一个表面传导到另一个表面的任何情况。为了便于解释，采用冷却IC的例子。
图2A示出IC封装200的横截面图。在IC管芯是处理器管芯的实施例中，可将IC封装称为处理器组件。IC封装200包括以“倒装”定向安装的IC管芯210，其有源侧面向下以通过焊球或凸起212与诸如电路板之类的衬底220的上表面耦合。衬底220可以是单层板或多层板，并且它可包括在其相对表面上的附加触点222，用于与附加封装结构(未示出)接合。
管芯210从位于其有源侧附近的包括引线迹(wiring trace)的内部结构中生成其热量；然而，热量的大部分是通过其背侧214散逸的。集中在管芯内的热散逸到以通常包括诸如铜或铝之类的金属的集成散热器230形式而与管芯接触的大型表面。在选择的实施例中，散热器包括诸如镍或金之类的附加涂层。在一个实施例中，集成散热器230构成一部分包装，并用作用于管芯210的封装外壳。在一个实施例中，还包括粘合剂234以将集成散热器230固定到衬底220。为了提高管芯210和集成散热器230之间的热导率，通常在管芯210和集成散热器230之间提供热界面材料240。
在一个实施例中，为了从集成散热器230进一步散热，将可选地具有鳍片252的散热片250耦合到集成散热器230。散热片250将热量散逸到周围环境中。在一个实施例中，第二热界面材料254进一步用于在集成散热器230和散热片250之间创建热通道。
图2A中所示的热界面材料240和250旨在作为热界面材料的一般说明。在以下的详细描述中，对于本发明的给定的实施例示出了热界面设备和组件的特定的细节。
图2B示出不具有如上所述附连的散热片的IC封装230的一个实施例。在一个实施例中示出了形成为封装外壳的集成散热器230。集成散热器230的边缘与衬底220一起形成了包装，其中充分地包装了管芯(未示出)。在一个实施例中，在集成散热器230中包括开口232。在一个实施例中，开口提供了对由管芯内热改变引起的压力变化的释放。
图3示出一部分热界面材料300的放大图。示出了基质材料302作为热界面材料300的组成成分，并在基质材料302内示出了分布的粒子304。在一个实施例中，基质材料302提供将互相热接触的分布的粒子304适当固定的功能。在一个实施例中，分布的粒子304包括提供将热量从一个粒子传导到下一个粒子的功能的热导性粒子，从而形成穿过热界面材料300的热通道。
在一个实施例中，基质材料302包括聚合物材料。在一个实施例中，聚合物包括环氧树脂材料。在一个实施例中，热界面材料300适于在诸如在IC芯片和传热设备之间形成薄层之类的制造过程中流动。在一个实施例中，基质材料随后固化。在一个实施例中，基质材料包括铟金属。在一个实施例中，基质材料包括焊料。在一个实施例中，焊料包括含铟焊料。在一个实施例中，热界面材料300中的焊料基质适于在制造过程中流动并且随后冷却成固体结构。
在一个实施例中，分布的粒子304包括许多自由粒子310。在本发明中，将自由粒子310定义为没有附连到粒子的表面的任何附加结构的均质粒子(homogenousparticle)。在一个实施例中，许多自由粒子310包括许多基本为球形的粒子312。在一个实施例中，许多自由粒子310包括许多具有不规则形状的粒子。
在一个实施例中，许多基本为球形的粒子312包括许多金属粒子。在一个实施例中，许多基本为球形的粒子312包括许多铜粒子。本领域的普通技术人员在得益于本发明内容后将认识到铜合金或其它含铜粒子也在本发明的范围内。在一个实施例中，许多基本为球形的粒子312包括许多银粒子。如铜一样，本领域的技术人员在得益于本发明内容后将认识到银合金或其它含银粒子也在本发明的范围内。
在一个实施例中，许多自由粒子310包括许多碳纳米管314。碳纳米管的热导率比诸如铜或银之类的金属高约5倍，因此向热界面材料300提供增加的热导率。在一个实施例中，分布的粒子304包括许多复合粒子320。在一个实施例中，复合粒子320包括基础粒子322和附连到基础粒子322的表面的碳纳米管324。
在一个实施例中，选择诸如碳纳米管的长度之类的尺寸以控制热界面材料300的机械性质。在一个实施例中，碳纳米管的特定大小或大小分布影响热界面材料300的粘性。粘性决定了将一定量的热界面材料300压入薄膜的组装中所需的力。类似于碳纳米管314，在一个实施例中，选择许多基本为球形的粒子312的尺寸以控制诸如热界面材料300的粘性之类的机械性质。在一个实施例中，利用分布粒子的大小，包括自由粒子310的大小和复合粒子320的大小。
由于热界面材料中较高的负载因子(loading factor)，在制造中诸如粘性之类的性质是重要的。可将负载因子或体积分数定义为粒子304的体积除以基质材料302的体积的比。一般而言，增加热界面材料300中的体积分数可增加热界面材料300的热导率。随着诸如处理器芯片之类的IC芯片生成越来越多的热，必须增加热导率以帮助散逸这些更多的热量。然而，随着热界面材料中体积分数的增加，粘性会达到不可接受的水平，那样热界面材料不再能够在芯片表面上充分地展开。
本公开中的实施例提供了在基质中具有较少粒子的高热导率。这就允许在热界面材料的热导率保持不变的同时降低粘性。这还允许在热导率增加的同时维持给定的粘性。在所选择的实施例中，热导率增加，而与此同时粘性则降低。
图4示出类似于图3所示的复合粒子320的单个复合粒子400。示出了基础粒子410与附连到基础粒子410的表面的碳纳米管420。在一个实施例中，基础粒子410包括基本为球形的粒子，尽管本发明不限于此。在一个实施例中，基础粒子410包括具有平均直径的不规则形状的粒子。基础粒子410的其它几何形状也在本发明的范围内。在一个实施例中，基础粒子包括诸如金属粒子之类的热导性粒子。在一个实施例中，基础粒子包括铜。在一个实施例中，基础粒子包括银。
如图4所示，在一个实施例中，碳纳米管420在纳米管420的第一端422附连到基础粒子410，并且其远端424远离基础粒子410延伸。在一个实施例中，在诸如沿碳纳米管420的一侧之类的另一个界面位置处附连碳纳米管420。在一个实施例中，复合粒子400通过在基础粒子410的表面上生长碳纳米管420来形成。在一个实施例中，单独形成碳纳米管420然后将其附连到基础粒子410的表面。
图5示出根据本发明的另一个实施例的复合粒子500。示出了基础粒子510与耦合到基础粒子510的表面的碳纳米管520。如图5所示，在一个实施例中，碳纳米管520通过中间涂层512耦合到基础粒子510。利用中间涂层512的优点包括将碳纳米管520耦合到基础粒子510的能力，其中基础粒子材料在通常情况下不能良好地粘附到碳纳米管。在一个实施例中，中间涂层512包括镍。其它的中间涂层512包括但不限于钴、铁和金。在一个实施例中，基础粒子510包括铜。在一个实施例中，基础粒子510包括银。尽管在图5中示出了一个中间涂层，但本发明不限于此。在一个实施例中，采用了多个中间涂层。尽管图5示出了围绕基础粒子510的连续的中间涂层512，但本发明不限于此。在一个实施例中，中间材料仅覆盖一部分纳米管和基础粒子之间的局部区域。
类似于图4，示出了在第一端522附连到基础粒子510的碳纳米管520，并且其远端524远离基础粒子510延伸。在一个实施例中，在诸如沿碳纳米管520的一侧之类的另一个界面位置处附连碳纳米管520。在一个实施例中，复合粒子500通过在基础粒子510的表面上生长碳纳米管520来形成。在一个实施例中，基础粒子510在碳纳米管520上生长。
回到图3，粒子304和基质材料302的任意几种组合都在本发明的范围内。一个例子包括聚合物基质材料302及具有铜球基础粒子322与附连的碳纳米管324的复合粒子320。另一个例子包括铟焊料基质材料302及具有银基础粒子322和附连的碳纳米管324的复合粒子320。尽管提及了特定的实施例，但本发明不限于此。认为诸如复合粒子之类的粒子和基质材料的其它组合对于得益于本发明内容的本领域的普通技术人员是可能的。
图6示出根据本发明的实施例的一种示例方法的流程图。将许多粒子分布在基质材料中，包括将碳纳米管结构附连到导热粒子的表面以形成复合粒子。将至少一个复合粒子放置在基质材料中。在一个实施例中，还将许多附加的非复合粒子分布在基质材料中。尽管示出了三项操作，但其它方法可包括较少的操作或较多的操作。在一个实施例中，操作以图6所示的顺序进行，尽管本发明不限于此。
利用如上所述的复合粒子的优点包括相关联的热界面材料的增加的热导率。已知碳纳米管是极好的导热体。例如，碳纳米管传导的热量比铜和银高约5倍。热界面材料中的热传导的一种机制包括通过各分布的粒子的接触点传导热量。在通过碳纳米管传导热量的过程中，热量必须从第一位置通过纳米管流到第二位置。通过基质中的自由碳纳米管的传导需要给定碳纳米管上的两个接触点，由此允许热传导通过该纳米管的全部或部分。通过点接触的热传导的量也比诸如上述的复合粒子实施例中通过较大的接触面面积的低。
在如上所述利用复合粒子的实施例中，由物理附连可在碳纳米管和相关联的基础粒子之间确保至少一个大型接触界面通道。因此利用如上所述的复合粒子的实施例将更可能形成沿纳米管的两个热接触点，且至少一个触点具有较大的界面面积。
利用如上所述的复合粒子的实施例的另一个优点包括作为减小粒子的体积分数的结果的粘性降低。复合粒子的较高的热导率使得在体积分数减小的同时保持或增加热界面材料的热导率。
业已示出了具有至少一部分复合粒子的热界面材料。优点包括增加的热导率和提高的机械性质，诸如较低的粘性。在所选择的实施例中，诸如金属粒子或碳纳米管等自由粒子连同复合粒子一起被包含在热界面材料中。包括自由粒子连同复合粒子的优点包括热界面材料的所选实施例内提高的组装密度。
尽管上面详述了所选的优点，但并不旨在覆盖所有优点。尽管在本文中示出并描述了特定的实施例，但本领域的技术人员将意识到适于实现相同目的的任何安排可代替所示的特定实施例。本申请旨在覆盖上述的实施例的任何改变或变体。应理解上述的实施例旨在说明而不是限制。上述实施例和其它实施例的组合对于审阅过以上描述的本领域的技术人员是显而易见的。本发明的范围包括使用以上结构和制造方法的任何其它应用。应参考所附权利要求书连同该权利要求书授权的全范围的等价技术方案来确定本发明的范围。

Claims (24)

1.一种热传导材料，包括：
基质材料；
在所述基质材料中分布的粒子，至少一个粒子包括：
热传导粒子；以及
附连到所述热传导粒子的表面以形成复合粒子的碳纳米管结构。
2.如权利要求1所述的热传导材料，其特征在于，所述热传导粒子包括金属粒子。
3.如权利要求2所述的热传导材料，其特征在于，所述热传导粒子包括铜粒子。
4.如权利要求2所述的热传导材料，其特征在于，所述热传导粒子包括银粒子。
5.如权利要求1所述的热传导材料，其特征在于，所述基质材料包括聚合物基质材料。
6.如权利要求1所述的热传导材料，其特征在于，所述基质材料包括焊料基质材料。
7.如权利要求1所述的热传导材料，其特征在于，所述基质材料包括铟。
8.如权利要求1所述的热传导材料，其特征在于，所述分布的粒子还包括分布的自由粒子。
9.如权利要求8所述的热传导材料，其特征在于，所述分布的自由粒子包括铜球。
10.如权利要求8所述的热传导材料，其特征在于，所述分布的自由粒子包括银粒子。
11.如权利要求8所述的热传导材料，其特征在于，所述分布的自由粒子包括分布的碳纳米管。
12.一种热传导材料，包括：
基质材料；
在所述基质材料中分布的粒子，至少一个粒子包括：
热传导粒子；
所述热传导粒子的表面上的中间涂层材料；以及
附连到所述中间涂层材料的表面以形成复合粒子的碳纳米管结构。
13.如权利要求12所述的热传导材料，其特征在于，所述中间涂层材料包括镍。
14.如权利要求12所述的热传导材料，其特征在于，所述中间涂层材料包括金。
15.如权利要求12所述的热传导材料，其特征在于，所述基质材料包括聚合物基质材料。
16.如权利要求12所述的热传导材料，其特征在于，所述基质材料包括焊料基质材料。
17.如权利要求16所述的热传导材料，其特征在于，所述焊料基质材料包括铟。
18.一种系统，包括：
处理器芯片；
耦合到所述处理器芯片的热界面层，所述热界面层包括：
基质材料；
在所述基质材料中分布的粒子，至少一个粒子包括：
热传导粒子；
附连到所述热传导粒子的表面以形成复合粒子的碳纳米管结构；
耦合到所述热界面层的传热设备；
动态随机存取存储器设备；以及
耦合所述存储器设备和所述处理器芯片的系统总线。
19.如权利要求18所述的系统，其特征在于，所述基质材料包括聚合物基质材料，而所述热传导粒子包括铜粒子。
20.如权利要求18所述的系统，其特征在于，所述基质材料包括含铟的焊料基质材料，而所述热传导粒子包括银粒子。
21.如权利要求18所述的系统，其特征在于，所述动态随机存取存储器设备包括双倍数据率动态随机存取存储器设备。
22.一种方法，包括：
将许多粒子分布在基质材料中，包括：
将碳纳米管结构附连到热传导粒子的表面以形成复合粒子；以及
将多个复合粒子放置在所述基质材料中。
23.如权利要求22所述的方法，其特征在于，还包括将许多附加的非复合粒子分布在所述基质材料中。
24.如权利要求22所述的方法，其特征在于，将至少一个所述复合粒子放置在所述基质材料中包括将至少一个所述复合粒子放置在含焊料的基质材料中。
CN200680023309.6A 2005-06-29 2006-06-28 热界面材料及方法 Expired - Fee Related CN101248154B (zh)

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KR100968637B1 (ko) 2010-07-06
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US7886813B2 (en) 2011-02-15
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