CN1555409A - 等离子体灰化后晶片的改进清洁剂 - Google Patents
等离子体灰化后晶片的改进清洁剂 Download PDFInfo
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- CN1555409A CN1555409A CNA02818145XA CN02818145A CN1555409A CN 1555409 A CN1555409 A CN 1555409A CN A02818145X A CNA02818145X A CN A02818145XA CN 02818145 A CN02818145 A CN 02818145A CN 1555409 A CN1555409 A CN 1555409A
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- water
- acid
- nmp
- blo
- sequestering agent
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Classifications
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
本发明涉及一种用于等离子体灰化后半导体制造的半导体晶片清洁剂,所述制剂包括至少一种有机螯合剂和至少一种极性溶剂,其中螯合剂和极性溶剂的量足以从半导体晶片上有效地除去无机化合物残余物。优选地,螯合剂选自2,4-戊二酮、丙二酸、草酸、对甲苯磺酸和三氟乙酸;和极性溶剂选自水、乙二醇、N-甲基吡咯烷酮(NMP)、γ-丁内酯(BLO)、环己基吡咯烷酮(CHP)、环丁砜、1,4-丁二醇和丁基卡必醇。
Description
参照相关申请
本申请是以Thomas J.Kloffenstein和Daniel N.Fine名义、于1996年7月3日提交的题目为“等离子体灰化后晶片的清洁剂”的美国专利08/675,500的部分继续申请。
发明背景
技术领域
本发明总体上涉及一种在半导体晶片制造中使用的化学制剂,具体涉及一种在经受等离子体灰化步骤后从半导体基材上除去光致抗蚀剂残余物的化学制剂和方法。
现有技术描述
在半导体集成电路的生产工艺中,在无机基材上施用光致抗蚀剂。典型地,光致抗蚀剂的制造包括产生金属化层,并在其上形成带有图案的抗蚀剂层。首先,通过曝光和随后的显影在光致抗蚀剂上形成图案,然后把形成的图案用作掩膜。没有被光致抗蚀剂图案掩蔽的无机基材部分的蚀刻方法是暴露于金属蚀刻等离子体下(例如基于卤素的等离子体)以除去暴露的金属从而形成精细电路。然后,通过上述蚀刻步骤从无机基材上除去光致抗蚀剂。之后,进行等离子体灰化步骤(典型地使用基于氧的等离子体),在该步骤中,从晶片上除去残余的抗蚀剂。最终,将主要由无机化合物如金属卤化物和金属氧化物组成的剩余残余物从无机基材上除去。得到带有图案的金属化层。
目前使用各种化学制剂除去无机化合物残余物。在引入抗蚀剂等离子体灰化技术之前,在使用的旧式半导体制造湿法化学抗蚀剂除去工艺中,这些制剂通常残留很长时间。典型地,这些现有技术的化学制剂包括强试剂,例如强无机酸、强无机碱和/或含反应性胺的化合物。然而这种强试剂能导致不希望进一步除去仍残留在晶片上的金属层或绝缘体层,因此在许多情况下这种强试剂是不理想的。另外,含胺组分和水的剥离剂可腐蚀金属,尤其是铜、铝和铝铜合金。
因此,提供改进的化学制剂以在抗蚀剂灰化步骤后有效除去残余物是有利的,所述化学试剂不腐蚀和/或不潜在地降解仍保留在半导体晶片上的精密结构。非氧化的酸性溶剂溶液可有效除去残余物并与敏感的金属和电介质材料具有优良的兼容性。
发明概述
本发明涉及用于在抗蚀剂等离子体灰化步骤后从半导体晶片上除去残余物的化学制剂,其可基本上完全除去残余物,而对半导体基材没有任何显著损害,从而增加合格产品的产率。
本发明的一方面涉及一种化学制剂,其可从半导体基材上高效除去无机残余物,如金属卤化物和金属氧化物残余物,而同时对基材和任何金属化或电介质特征是“不反应的”。
本发明的另一方面涉及改进的化学制剂,由于所述组合物的性质,该化学制剂不使处理这些制剂的人员接触任何显著的毒性危害,而且其对生态影响最小。
本发明的另一方面涉及的化学制剂提供粘附力提高和表面一致性的半导体表面。
本发明的另一方面涉及的化学制剂基本上不含有高反应性的试剂,如强无机酸、强碱、含胺的化合物和/或催化剂。
因此,根据本发明的一个方面,提供了一种供等离子体灰化后半导体制造使用的半导体晶片清洁剂,其包括至少一种有机螯合剂和至少一种极性溶剂,其中螯合剂和极性溶剂以充足的量存在以从半导体晶片上有效地除去残余物。
本发明的另一个实施方案提供了一种供等离子体灰化后半导体制造使用的半导体晶片清洁剂,其包括:
至少一种有机螯合剂;和
至少一种极性溶剂,其中有机螯合剂和极性溶剂组分存在的量为约2wt%到约98wt%。
螯合剂的例子可包括但不局限于,二羧酸和取代二羧酸,如戊二酸、琥珀酸、丙二酸、草酸;多元酚,如儿茶酚;二酮,如2,4-戊二酮。优选地,螯合剂包括2,4-戊二酮、儿茶酚、丙二酸、草酸、对甲苯磺酸和三氟乙酸。优选溶剂的例子包括水、乙二醇、N-甲基吡咯烷酮(NMP)、γ-丁内酯(BLO)、环己基吡咯烷酮(CHP)、环丁砜、1,4-丁二醇和丁基卡必醇。
根据本发明的另一个实施方案,在足够有效地基本上除去所有剩余残余物的条件下,使表面区域覆盖有得自灰化工艺的残余物的半导体基材浸入上述化学制剂中。
本发明的制剂对除去灰化残余物是有利的,因为其包括的试剂比以前使用的其它组合物的毒性和危险性更小。
根据以下优选实施方案的详细说明,本发明的这些优点和其它优点对于本领域的普通技术人员将变得显而易见。
优选实施方案详述
根据本发明,阐述的化学制剂用于从基材上,通常用于从半导体基材上除去无机化合物残余物。本发明的化学制剂的优点是:其基本上不含有现有技术的制剂中通常存在的强无机酸、强碱和/或胺化合物。
本发明的一般制剂包括至少一种有机螯合剂和一种极性溶剂,其以下列范围存在(其中百分比(%)为重量百分比):
约1%到约15%的有机螯合剂;
约15%到约98的水;和
约0%到约75%的极性有机溶剂。
从以上制剂范围可以看出,存在有第一系列制剂,其中极性有机溶剂的量为零。
在生产优选的一般制剂中,有机螯合剂是儿茶酚(1,2-二羟基苯)和极性有机溶剂是γ-丁内酯(BLO)。因此优选的一般制剂包括:
儿茶酚-约1%到约15%;
水-约25%到约98%;和
BLO-约10%到约60%。
考虑上述的三元制剂,在参数范围内优选的三元制剂基本上由下列成分组成:
儿茶酚-约7%到约12%;
水-约48%到约83%;和
BLO-约10%到约40%。
本发明的晶片清洗溶液的制备是以简单的方式通过溶解或混合组分,选择性地轻微加热进行的。在确保溶液不含粒子所必需的精制过滤之后,晶片清洗溶液即可使用,溶液不含粒子是半导体电子学的基础。
本发明还提供在灰化工艺之后从表面除去剩余残余物的方法。根据本发明的方法,在足够从基材上除去残余物的条件下把基材浸入上述的本发明的制剂中。这些除去条件不是严格的,通常包括约20℃到约130℃的温度,优选约40℃到80℃的温度,浸入时间为约5分钟到60分钟,优选约30分钟。
对于本领域的普通技术人员而言,在产生可比较结果的情况下,将预期也可使用与儿茶酚有关的螯合剂及其它有机螯合剂。与儿茶酚相有关的螯合剂包括在相邻的碳原子上具有至少两个羟基(OH)基团的苯、萘和芳香杂环化合物的衍生物。
可使用的其它极性有机溶剂包括N-甲基吡咯烷酮(NMP);丙二醇单甲醚醋酸酯(PMA);乙二醇;丙二醇和二甲亚砜。
本发明开发了其他制剂,用于剥离灰化前由等离子体金属蚀刻产生的晶片残余物。所述其他制剂包括以下组分(重量百分比):
至少一种有机螯合剂化合物,约2%到约98%;和
至少一种极性溶剂,约2%到约98%;
其中优选的有机螯合剂化合物是:
2,4-戊二酮-约0.01%到约98%;
丙二酸-约0.01%到约10%;
草酸-约0.01%到约10%;
对甲苯磺酸-约0.01%到约10%;
三氟乙酸-约0.01%到约12%;
和优选的极性溶剂是:
水-约0.01%到约98%;
乙二醇-约0.01到约98%;
N-甲基吡咯烷酮(NMP)-约0.01%到约98%;
γ-丁内酯(BLO)-约0.01%到约40%;
环己基吡咯烷酮-约0.01%到约75%;
环丁砜-约0.01%到约70%;
1,4-丁二醇-约0.01%到约75%;
丁基卡必醇-约0.01%到约70%。
本文阐述的用于具体清洁剂的优选溶剂组成是:
NMP(约50%到约55%)和水(约28%到约40%)的混合物。
BLO(约40%到约50%)和水(约30%到约50%)的混合物。预期其它的非胺极性有机溶剂在单独使用或与水混合时也是适合的。
提供优良结果的其它有机螯合剂是:
乙酰乙酸甲酯-约0.01%到约10%
丙二酸二甲酯-约0.01到约10%
乳酸-约0.01%到约10%
乙酰丙酸-约0.01到约5%。
新型制剂的显著特征是在基本上不含有强无机酸、强碱和/或含胺组分的溶剂溶液中使用螯合剂。对于本发明的目的,强酸定义为是pKa小于约0的酸。对于本发明的目的,强碱定义为是pKa大于0的具有共轭酸的碱。
本发明的其他具体清洁剂包括:
1.2,4-戊二酮-约5%到约-12%;
BLO-约35%到约40%;和
水-约45%到约55%,
2.2,4-戊二酮-约7%到约15%;
NMP-约45%到约55%;和
水-约35%到约45%,
3.草酸-约3%到约5%;
NMP-约55%到约75%;和
水-约20%到约50%,
4.乙酰乙酸甲酯-约5%到约10%;
BLO-约30%到约40%;和
水-约50%到约75%,
5.丙二酸-约5%到约10%;
NMP-约50%到约55%;和
水-约40%到约60%,
6.丙二酸-约5%到约10%;
BLO-约20%到约30%;和
水-约45%到约60%,
7.丙二酸-约5%到约10%
CHP-约20%到约75%;和
水-约20%到约40%,
8.丙二酸-约5%到约10%;
环丁砜-约20%到约70%;和
水-约20%到约40%,
9.丙二酸-约5%到约10%;
1,4-丁二醇-约20%到约75%;和
水-约20%到约40%,
10.对甲苯磺酸-约5%到约10%;
NMP-约50%到约60%;和
水-约40%到约60%;和
11.三氟乙酸-约10%到约12%;
NMP-约20%约50%;和
水-约40%到约60%。
预期其它的1,3-二羰基化合物和相关化合物能产生可比较的性能。这些化合物可具有以下通式的结构:
X-CHR-Y
其中:
R是氢原子或烷基;和
X和Y是包括已知具有吸电性质的多键部分的官能团,如X和Y可为CZ=O、C=N、CZ=N、CZ-S、NZ=O、SZ-),其中Z代表另一种原子或原子组。X和Y可以相同或不同。
在本发明的另一个实施方案中,有机螯合剂和极性溶剂的量可在上述指定的范围内选择,以使清洁剂的pH处在约1.5到约6.9的范围内,更优选约1.5到约5.0,和最优选约1.8到约4.0。
对于本领域的技术人员而言,也可预期到:可选择的组分,如表面活性剂、稳定剂、腐蚀抑制剂、缓冲剂和共溶剂可构成显然的添加剂。
以下的优选具体实施方案只是说明性的,无论如何不是以任何方式限定公开的其余部分。在前述内容及以下实施例中,除非另有陈述,所有的温度是摄氏温度,所用份数和百分比以重量计。
实施例I
本发明的第一个实施例包括具有3层金属导线的晶片,所述3层金属导线包括顶层的氮化钛(1200厚)、中间层的铝(99.5%)铜(0.5%)合金(10,000厚)和底层的钛/钨合金(1500厚)。基材是二氧化硅,金属导线的宽度是约0.8微米。
晶片用含氯的等离子体进行金属蚀刻,然后用氧等离子体灰化抗蚀剂。接着在60℃把晶片浸入本发明的包括儿茶酚10%、水50%和BLO40%的制剂中30分钟,然后用去离子水洗。进一步检测显示:在45到75℃的温度和15到60分钟的接触时间可有效除去残余物。另外,除了晶片浸没法之外,也可使用自动喷雾工具把溶液喷到晶片上,然后用水漂洗。
实施例II
使用不同清洁剂处理与实施例I中所用晶片相同的第二套晶片。具体地,晶片用含氯的等离子体进行金属蚀刻,然后用氧等离子体灰化抗蚀剂。接着在60℃把晶片浸入本发明包括儿茶酚8%和水92%的浴中30分钟,然后用去离子水洗。如同前面的实施例一样,45到75℃的制剂温度和15到60分钟的晶片接触时间会产生令人满意的结果。
考虑以上两个实施例,对处理的晶片进行SEM显微照相检查以评价制剂的剥离效力,以及证实其对金属特征没有腐蚀性。
实施例III
已经用含氯或含氟的等离子体蚀刻,然后用氧等离子体灰化的市售晶片具有的表面残余物典型地包括无机材料如,但不限于,氧化铝和二氧化钛。这些残余物经常难以完全溶解而不引起有效装置性能所需的金属和氮化钛特征的腐蚀。
使用本发明的制剂处理包含微通路(Via)和金属导线的五种市售晶片。在所有情况下,在等离子体蚀刻和灰化之后,通过在60℃把晶片浸入浴中30分钟除去晶片上的残余物,然后用去离子水洗,和用氮气流干燥。预期溶液也可通过自动喷雾工具喷到晶片上,然后用水漂洗。
四种微通路和金属导线结构是:
1.0.8微米直径,由二氧化硅顶层和第二层、氮化钛第三层和铝、硅、铜(AlSiCu)合金底层组成的四层微通路。基材是二氧化硅。
2.1微米直径,在硅基材上由二氧化硅顶层(7000厚)和氮化钛中间层(1200厚)组成的双层微通路。
3.1.2微米宽,二氧化硅基材上的4层金属导线,顶层为钛/钨(1200厚)、第二层为铝(6000厚)、第三层为钛/钨(1200厚)和底层为钛(500厚)。
4.2微米宽,二氧化硅基材上的3层金属导线,顶层为钛(200厚)、中间层为铝/硅/铜(750厚)和底层为钛/钨(1250厚)。
5.1微米直径,顶层为氧化物(300厚)、第二层为低k电介质(8000厚)和第三层氮化硅蚀刻终止(200厚)和最后一层为铜的波形花纹结构。低k是一种有机聚芳香醚聚合物,如SiLK或掺杂碳和/或氢的氧化硅如Coral、LKD和HOSP。
根据对处理前后的晶片用扫描电子显微镜照相检查,优选的制剂成功地除去残余物,而在金属和/或合金层上没有腐蚀迹象。
虽然参考具体的优选实施方案表明和描述了本发明,可以理解,对于本领域技术人员而言,本发明的其它和进一步的改变和修饰在了解本发明之后是显而易见的。因此以下的权利要求书覆盖了所有落在本发明的真正的实质和范围内的这些改变和修饰。
Claims (34)
1.一种用于等离子体灰化后半导体制造的半导体晶片清洁剂,其包括至少一种有机螯合剂和至少一种极性溶剂,其中螯合剂和极性溶剂的量足以从半导体晶片上有效地除去残余物。
2.权利要求1的清洁剂,其中有机螯合剂和极性溶剂的量为约2%到约98%。
3.权利要求2的清洁剂,其中有机螯合剂选自2,4-戊二酮、丙二酸、草酸、对甲苯磺酸和三氟乙酸。
4.权利要求2的清洁剂,其中有机螯合剂选自乙酰乙酸甲酯、丙二酸二甲酯、乳酸和乙酰丙酸。
5.权利要求1的清洁剂,其中以重量百分比范围所示的有机螯合剂选自2,4-戊二酮0.01-98%、丙二酸0.01-10%、草酸0.01-10%、对甲苯磺酸0.01-10%和三氟乙酸0.01-12%。
6.权利要求2的清洁剂,其中溶剂选自水、乙二醇、N-甲基吡咯烷酮(NMP)、γ-丁内酯(BLO)、环己基吡咯烷酮(CHP)、环丁砜、1,4-丁二醇和丁基卡必醇。
7.权利要求5的清洁剂,其中以重量百分比范围所示的所述溶剂选自水0.01-98%、乙二醇0.01-98%、N-甲基吡咯烷酮(NMP)0.01-98%、γ-丁内酯(BLO)0.01-40%、环己基吡咯烷酮(CHP)0.01-75%、环丁砜0.01-70%、1,4-丁二醇0.01-75%和丁基卡必醇0.01-70%。
8.权利要求1的清洁剂,其中所述制剂基本上不含有强无机酸、强碱、含胺的组分和/或催化剂。
9.权利要求1的清洁剂,其中残余物是无机化合物。
10.权利要求8的清洁剂,其中化学制剂基本上由下列成分组成:
儿茶酚约7%到约12%;
水约48%到约83%;和
BLO约10%到约40%。
11.一种用于等离子体灰化后半导体制造的半导体晶片清洁剂,其中所述制剂选自:
a.2,4-戊二酮约5%到约12%;
BLO约35%到约40%;和
水约45%到约55%,
b.2,4-戊二酮约7%到约15%;
NMP约45%到约55%;和
水约35%到约45%,
c.草酸约3%到约5%;
NMP约55%到约75%;和
水约20%到约50%,
d.乙酰乙酸甲酯约5%到约10%;
BLO约30%到约40%;和
水约50%到约75%,
e.丙二酸约5%到约10%;
NMP约50%到约55%;和
水约40%到约60%,
f.丙二酸约5%到约10%;
BLO约20%到约30%;和
水约45%到约60%,
g.丙二酸约5%到约10%;
CHP约20%到约75%;和
水约20%到约40%,
h.丙二酸约5%到约10%;
环丁砜约20%到约70%;和
水约20%到约40%;
i.丙二酸约5%到约10%;
1,4-丁二醇约20%到约75%;和
水约20%到约40%,
j.对甲苯磺酸约5%到约10%;
NMP约50%到约60%;和
水约40%到约60%;和
k.三氟乙酸约10%到约12%;
NMP约20%到约50%;和
水约40%到约60%。
12.一种制造半导体晶片的方法,其包括下列步骤:
等离子体灰化来自晶片表面的物质;和
使用包含至少一种有机螯合剂和至少一种极性溶剂的化学制剂清洁所述晶片,其中有机螯合剂和极性溶剂的量足以从半导体晶片上有效地除去残余物。
13.权利要求12的方法,其中螯合剂和极性溶剂的量为约2%到约98%。
14.权利要求13的方法,其中有机螯合剂选自2,4-戊二酮、丙二酸、草酸、对甲苯磺酸、三氟乙酸。
15.权利要求13的方法,其中有机螯合剂选自乙酰乙酸甲酯、丙二酸二甲酯、乳酸和乙酰丙酸。
16.权利要求12的方法,其中以重量百分比范围所示的有机螯合剂选自2,4-戊二酮0.01-98%、丙二酸0.01-10%、草酸0.01-10%、对甲苯磺酸0.01-10%和三氟乙酸0.01-12%。
17.权利要求13的方法,其中溶剂选自水、乙二醇、N-甲基吡咯烷酮(NMP)、γ-丁内酯(BLO)、环己基吡咯烷酮(CHP)、环丁砜、1,4-丁二醇和丁基卡必醇。
18.权利要求16的方法,其中以重量百分比范围所示的溶剂选自水0.01-98%、乙二醇0.01-98%、N-甲基吡咯烷酮(NMP)0.01-98%、γ-丁内酯(BLO)0.01-40%、环己基吡咯烷酮(CHP)0.01-75%、环丁砜0.01-70%、1,4-丁二醇0.01-75%和丁基卡必醇0.01-70%。
19.权利要求18的方法,其中晶片在45-75℃的温度与所述化学制剂接触15-60分钟。
20.权利要求12的方法,其中化学制剂基本上不含有强无机酸、强碱、含胺的组分和/或催化剂。
21.权利要求20的方法,其中化学制剂基本上由下列成分组成:
儿茶酚约7%到约12%;
水约48%到约83%;和
BLO约10%到约40%。
22.一种制造半导体晶片的方法,其包括下列步骤:
等离子体灰化来自晶片表面的物质;和
使用包括至少一种有机螯合剂和至少一种极性溶剂的化学制剂清洁所述晶片,其中有机螯合剂和极性溶剂的量足以从半导体晶片上有效地除去残余物,以及所述清洁剂选自:
a.2,4-戊二酮约5%到约12%;
BLO约35%到约40%;和
水约45%到约55%,
b.2,4-戊二酮约7%到约15%;
NMP约45%到约55%;和
水约35%到约45%,
c.草酸约3%到约5%;
NMP约55%到约75%;和
水约20%到约50%,
d.乙酰乙酸甲酯约5%到约10%;
BLO约30%到约40%;和
水约50%到约75%,
e.丙二酸约5%到约10%;
NMP约50%到约55%;和
水约40%到约60%,
f.丙二酸约5%到约10%;
BLO约20%到约30%;和
水约45%到约60%,
g.丙二酸约5%到约10%;
CHP约20%到约75%;和
水约20%到约40%,
h.丙二酸约5%到约10%;
环丁砜约20%到约70%;和
水约20%到约40%;
i.丙二酸约5%到约10%;
1,4-丁二醇约20%到约75%;和
水约20%到约40%,
j.对甲苯磺酸约5%到约10%;
NMP约50%到约60%;和
水约40%到约60%;和
k.三氟乙酸约10%到约12%;
NMP约20%到约50%;和
水约40%到约60%。
23.权利要求22的方法,其中晶片在45-75℃的温度与所述化学制剂接触15-60分钟。
24.一种制备化学制剂的方法,所述化学制剂用于在灰化工艺之后从半导体晶片上清洁残余物,该方法包括下列步骤:
使至少一种有机螯合剂和至少一种极性溶剂以足量组合,从而有效地从半导体晶片上基本上除去所有的残余物。
25.权利要求24的方法,其中有机螯合剂和极性溶剂的量为约2%到约98%。
26.权利要求25的方法,其中有机螯合剂选自2,4-戊二酮、丙二酸、草酸、对甲苯磺酸和三氟乙酸。
27.权利要求25的方法,其中有机螯合剂选自乙酰乙酸甲酯、丙二酸二甲酯、乳酸和乙酰丙酸。
28.权利要求24的方法,其中以重量百分比范围所示的有机螯合剂选自2,4-戊二酮0.01-98%、丙二酸0.01-10%、草酸0.01-10%、对甲苯磺酸0.01-10%和三氟乙酸0.01-12%。
29.权利要求26的方法,其中溶剂选自水、乙二醇、N-甲基吡咯烷酮(NMP)、γ-丁内酯(BLO)、环己基吡咯烷酮(CHP)、环丁砜、1,4-丁二醇和丁基卡必醇。
30.权利要求28的方法,其中以重量百分比范围所示的溶剂选自水0.01-98%、乙二醇0.01-98%、N-甲基吡咯烷酮(NMP)0.01-98%、γ-丁内酯(BLO)0.01-40%、环己基吡咯烷酮(CHP)0.01-75%、环丁砜0.01-70%、1,4-丁二醇0.01-75%和丁基卡必醇0.01-70%。
31.权利要求24的方法,其中制剂基本上不含有强无机酸、强碱、含胺的组分和/或催化剂。
32.权利要求24的方法,其中残余物是无机化合物。
33.权利要求31的方法,其中化学制剂基本上由下列成分组成:
儿茶酚约7%到约12%;
水约48%到约83%;和
BLO约10%到约40%。
34.一种制备化学制剂的方法,所述化学制剂用于在灰化工艺之后从半导体晶片上清洁残余物,该方法包括下列步骤:
使至少一种有机螯合剂和至少一种极性溶剂以足量组合,从而有效地从半导体晶片上基本上除去所有的残余物,其中所述制剂选自:
a.2,4-戊二酮约5%到约12%;
BLO约35%到约40%;和
水约45%到约55%,
b.2,4-戊二酮约7%到约15%;
NMP约45%到约55%;和
水约35%到约45%,
c.草酸约3%到约5%;
NMP约55%到约75%;和
水约20%到约50%,
d.乙酰乙酸甲酯约5%到约10%;
BLO约30%到约40%;和
水约50%到约75%,
e.丙二酸约5%到约10%;
NMP约50%到约55%;和
水约40%到约60%,
f.丙二酸约5%到约10%;
BLO约20%到约30%;和
水约45%到约60%,
g.丙二酸约5%到约10%;
CHP约20%到约75%;和
水约20%到约40%,
h.丙二酸约5%到约10%;
环丁砜约20%到约70%;和
水约20%到约40%;
i.丙二酸约5%到约10%;
1,4-丁二醇约20%到约75%;和
水约20%到约40%,
j.对甲苯磺酸约5%到约10%;
NMP约50%到约60%;和
水约40%到约60%;和
k.三氟乙酸约10%到约12%;
NMP约20%到约50%;和
水约40%到约60%。
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-
2001
- 2001-09-17 US US09/954,284 patent/US7534752B2/en not_active Expired - Fee Related
-
2002
- 2002-08-20 WO PCT/US2002/026487 patent/WO2003035814A2/en not_active Application Discontinuation
- 2002-08-20 CN CNA02818145XA patent/CN1555409A/zh active Pending
- 2002-09-16 TW TW091121131A patent/TW557508B/zh not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103377877A (zh) * | 2012-04-27 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的清洗方法 |
CN106890816A (zh) * | 2015-12-21 | 2017-06-27 | 东莞新科技术研究开发有限公司 | 真空泵的清洗方法 |
CN109164686A (zh) * | 2018-11-02 | 2019-01-08 | 江阴江化微电子材料股份有限公司 | 一种正性光刻胶去胶清洗组合物及其应用 |
CN109164686B (zh) * | 2018-11-02 | 2022-01-28 | 江阴江化微电子材料股份有限公司 | 一种正性光刻胶去胶清洗组合物及其应用 |
CN112358920A (zh) * | 2020-11-04 | 2021-02-12 | 合肥微睿光电科技有限公司 | 一种等离子体腔室用陶瓷板清洗药液及其应用 |
Also Published As
Publication number | Publication date |
---|---|
TW557508B (en) | 2003-10-11 |
US7534752B2 (en) | 2009-05-19 |
WO2003035814A3 (en) | 2003-10-02 |
US20020068685A1 (en) | 2002-06-06 |
WO2003035814A2 (en) | 2003-05-01 |
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