CN1244719C - 含有1,3－二羰基化合物的半导体去膜组合物 - Google Patents
含有1,3－二羰基化合物的半导体去膜组合物 Download PDFInfo
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- CN1244719C CN1244719C CNB018213561A CN01821356A CN1244719C CN 1244719 C CN1244719 C CN 1244719C CN B018213561 A CNB018213561 A CN B018213561A CN 01821356 A CN01821356 A CN 01821356A CN 1244719 C CN1244719 C CN 1244719C
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
半导体晶片清洗剂，包括2-98重量%有机胺，0-50重量%水，0.1-60重量%1，3-二羰基化合物螯合剂，0-25重量%另外的不同螯合剂，0.5-40重量%含氮羧酸或亚胺，以及2-98重量%极性有机溶剂。该清洗剂用于从晶片上除去抗蚀剂等离子体灰化步骤后残留的残余物，例如从具有精密铜互连结构的半导体晶片上除去无机残余物。
Description
相关申请的交叉引用
本申请是1999年8月20日提交的美国专利申请09/331,537号的部分连续申请，基于并要求1997年12月23日提交的指定美国作为指定国的国际专利申请PCT/US97/23917的优先权。
发明背景
发明领域
本发明总的涉及半导体晶片制造中使用的化学剂(chemicalformulation)，具体来说涉及用于从晶片上除去在抗蚀剂的等离子体灰化步骤后残留的残余物的化学剂。更具体地，本发明涉及从具有精密的铜互连结构的半导体晶片上除去无机残余物的清洗剂。
现有技术说明
通常，在抗蚀剂灰化步骤后，使用各种化学剂除去残余物并清洗晶片。这些化学剂中的一些包括含有胺和/或四烷基氢氧化铵、水和/或其它溶剂，以及螯合剂的碱性组合物。这样的化学剂伴有一些缺点，包括不必要地除去金属或绝缘层，以及促进了所需金属层，特别是铜或铜合金特征层的腐蚀。
一些这样的化学剂利用防腐添加剂以防止在清洗过程中不需要地将铜金属腐蚀。但是，常规的防腐添加剂通常对清洗过程有不利作用，原因是这样的添加剂与残余物相互作用，并抑制了这样的残余物溶于清洗液中。另外，常规的添加剂在清洗过程结束后不容易从铜表面上冲洗掉，它们的存在导致集成电路的污染。集成电路的污染将不利地增加被污染区域的电阻，并引起电路系统内部的不可预见的导电故障。
因此，本发明的一个目的是提供有效除去抗蚀剂灰化步骤后残留的残余物的化学剂。
本发明的另一个目的是提供不损害及潜在劣化需要留在晶片上的精密金属结构的晶片清洗剂(cleaning formulation)。
本发明的再一个目的是提供晶片清洗剂，它含有改良的防腐剂，以保护半导体衬底上的铜结构，所述的清洗剂是以组合物的形式，它在残余物去除过程结束后容易由水或其它冲洗介质冲洗掉，从而减少了晶片衬底上的集成电路的污染。
本发明的其它目的和优点通过随后的公开内容和附加的权利要求将更加明显。
发明概述
本发明涉及半导体清洗剂，可用于清洗例如在等离子体灰化制造半导体后的半导体晶片。
一方面，本发明涉及除去抗蚀剂的等离子体灰化步骤后残留在这些晶片上的残余物的方法，包括将晶片与清洗剂接触，所述的清洗剂含有(i)有机胺，(ii)水，(iii)含氮羧酸或亚胺，(iv)1，3-二羰基螯合化合物，(v)极性有机溶剂，以及任选的(vi)至少一种另外的不同金属螯合剂。
另一方面，本发明涉及晶片清洗剂，含有(i)有机胺，(ii)水，(iii)含氮羧酸或亚胺，(iv)1，3-二羰基螯合化合物，(v)极性有机溶剂，以及任选的(vi)至少一种另外的不同金属螯合剂。
再一方面，本发明涉及等离子体灰化制造半导体后使用的半导体晶片清洗剂，以如下所示的重量百分数(以清洗剂的总重量为基准)含有下面的成分：
有机胺 2-98％
水 0-50％
1，3-二羰基化合物螯合剂 0.1-60％
另外的不同金属螯合剂 0-25％
含氮羧酸或亚胺 0.5-40％
极性有机溶剂 2-98％
总计 100％
本发明的清洗剂有效除去等离子体灰化步骤后的无机残余物，尤其是金属卤化物和金属氧化物残余物。这样的清洗剂也显著减少半导体晶片上的铜金属结构在使用时被不希望地腐蚀或除去。
另一方面，本发明涉及制造半导体晶片的方法，包括以下步骤：
等离子腐蚀晶片表面的金属化层；
等离子灰化晶片表面的抗蚀剂；
用半导体晶片清洗剂清洗晶片，所述的清洗剂按所示的重量百分数(以清洗剂的总重量为基准)范围含有下面的成分：
有机胺 2-98％
水 0-50％
1，3-二羰基化合物螯合剂 0.1-60％
另外的不同金属螯合剂 0-25％
含氮羧酸或亚胺 0.5-40％
极性有机溶剂 2-98％
总计 100％。
另外，本发明的清洗剂在残余物去除过程后留有较少污物，因此改善了所得的微电子设备产品的质量。
从随后的公开内容及附加的权利要求可以获悉本发明的其它特征和优点。
附图简述
图1是可在本发明的广泛实践中使用的铜特异防腐剂的示意图，所述的防腐剂在铜金属上形成了保护层从而防腐。
图2是用去离子水从铜表面上冲洗掉铜特异防腐剂的示意图。
优选实施方案详述
本发明涉及适合除去晶片的无机残余物的清洗剂，所述的残余物来自高密度等离子体腐蚀，该腐蚀随后是用含氧的等离子体灰化。
本发明的清洗剂有利地含有1，3-二羰基化合物和/或另外的不同金属螯合剂、含氮羧酸或亚胺、胺、和水或其它溶剂作为主要成分。
优选的清洗剂以如下所示的重量百分数(以清洗剂的总重量为基准)含有下面的成分：
有机胺 2-98％
水 0-50％
1，3-二羰基化合物螯合剂 0.1-60％
另外的不同金属螯合剂 0-25％
含氮羧酸或亚胺 0.5-40％
极性有机溶剂 2-98％
总计 100％
本领域的普通技术人员将理解，如上所述的清洗剂的成分可以为任何适合的类型或种类。清洗剂的各成分的具体举例和优选的剂成分如下所述，其中具体的成分与其在剂中的优选重量百分比浓度相关联，所述的重量百分比浓度是以上面规定的总重量为基准。
优选的胺包括：
五甲基二亚乙基三胺(PMDETA) 5-95％
三乙醇胺(TEA) 5-95％
其它十分有利的胺包括：
单乙醇胺
二乙二醇胺
二氮杂双环(2.2.2)辛烷
二亚乙基三胺
3，3’-亚氨基双(N，N-二甲基丙胺)
N-甲基咪唑
四亚乙基五胺
三亚乙基四胺
三甲氧基乙氧基乙胺
二乙醇胺
甲基二乙醇胺
四甲基己二胺
N，N-二乙基乙醇胺
具体的优选1，3-二羰基化合物螯合剂包括：
2，4-戊二酮 2-60％
N，N-二甲基乙酰乙酰胺 2-60％
乙酰乙酸甲酯 15-60％
丙二酸二甲酯 10-48.3％
其它十分有利的1，3-二羰基化合物包括：
N-甲基乙酰乙酰胺
乙酰乙酰胺
丙二酰胺
优选的含氮羧酸或亚胺包括：
亚氨基二乙酸 0.5-2.5％
甘氨酸 0.5-2.5％
次氮基三乙酸 0.5-2.5％
1，1，3，3-四甲基胍 0.5-2.5％
其它十分有利的含氮羧酸或亚胺包括：
CH3C(＝NCH2CH2OH)CH2C(O)N(CH3)2
CH3C(＝NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2
CH3C(＝NH)CH2C(O)CH3
(CH3CH2)2NC(＝NH)N(CH3CH2)2
HOOCCH2N(CH3)2
HOOCCH2N(CH3)CH2COOH
优选的溶剂包括：
水 0-50％
乙二醇 2-74％
N-甲基吡咯烷酮(NMP) 2-49％
环丁砜 2-10％
选择性地用于本发明的某些清洗剂中的优选的另外的不同金属螯合剂包括：
吡咯烷二硫代氨基甲酸铵 0-25％
氨基甲酸铵 0-15％
草酸铵 0-15％
硫氰酸铵 0-15％
硫代硫酸铵 0-15％
三氟乙酸 0-12％
含有1，3-二羰基化合物和/或另外的不同金属螯合剂并结合胺和溶剂的清洗剂的应用使得能够实现该技术的独特改进。本发明的清洗剂提供比含有儿茶酚、胺和溶剂的常规去膜剂更佳的去膜性能和更小的腐蚀性。
加入含氮羧酸或亚胺是本发明的另一项有利的改进。含氮羧酸或亚胺含有被特异吸引到游离铜原子上的官能团。如图1所示，铜特异防腐剂C在残余物去除过程中与铜表面接触，将附着到铜表面上，并形成保护层，从而防止铜表面被螯合剂A+和X-所腐蚀。另外，如图2所示，这样的铜特异防腐剂C可以容易地用去离子水或其它冲洗介质冲洗掉，因此在清洗作业结束后在铜表面留有极少的污物。
除上面所列举的以外，本发明的清洗剂还可以包括多种不同的溶剂、有机胺、螯合剂和含氮羧酸或亚胺。特别的1，3-二羰基化合物及性质适合的相关化合物包括由下式表示的那些：
X-CHR-Y
其中，R为氢原子或脂肪族基团，例如，C1-C8烷基、芳基、链烯基等，X和Y相同或不同，各为含有具有吸电子性质的多键合部分的官能团，例如CONH2、CONHR’、CONR’R”、CN、NO2、SOR’或SO2Z，其中R’和R”相同或不同，各表示C1-C8烷基，Z表示另一个原子或基团，例如，氢、卤素或C1-C8烷基。
可用于本发明的广泛实践中的另外的含氮羧酸包括由下式表示的那些：
COOH-CH2-NRR’
其中，R和R’各自独立地选自氢、烷基、芳基和羧酸。
除上面具体列举外的氨基甲酸盐和二硫代氨基甲酸二烷基酯可以用作本发明的广泛实践中的螯合剂。
多种其它极性有机溶剂可以单独使用或与水混合使用。
本发明的清洗剂还可选择性地含有表面活性剂、稳定剂、防腐剂、缓冲剂和共溶剂之类的成分，这对本发明清洗剂的给定最终使用场合是有用的或为其所需。
本发明的清洗剂对已经用含氯或含氟的等离子体腐蚀的晶片特别有用，该腐蚀随后是进行氧等离子体灰化。这种处理产生的残余物通常含有金属氧化物。在不造成有效的设备性能所需金属特征的腐蚀的情况下，这些残余物经常难以完全溶解。
本发明的特征和优点通过下面的非限定性实施例可以更充分地表现。
实施例1
在两种不同的碱性清洗剂中试验了含有含氮羧酸或亚胺的铜特异防腐剂，清洗剂具有下述的成分和特性。
表1
| 成分 | 温度 | pH | 铜腐蚀速度(/分) | |
| 清洗剂1 | 二甲基乙酰乙酰胺、胺和水 | 70 | 6.2 | 17.4 |
| 清洗剂2 | 氟化铵、三乙醇胺、五甲基二亚乙基三胺和水 | 40 | 8.6 | 7.5 |
铜腐蚀速度是通过标准四点探针技术测定的。如下表所示，加入根据本发明的防腐剂显著减慢了铜的腐蚀速度，并且有效地防止了在清洗过程中不希望的腐蚀：
表2
| 防腐剂 | 温度(℃) | 使用的清洗剂 | 浓度(％) | 溶液pH | 铜腐蚀速度(/分) | 腐蚀速度的减小(％) |
| 亚氨基二乙酸 | 40 | 2 | 1.5 | 8.0 | 1-2 | -73.3～86.7 |
| 甘氨酸 | 40 | 2 | 1.5 | 9.2 | 3.6 | -52.0 |
| 次氮基三乙酸 | 40 | 2 | 1.5 | 8.2 | 3.6 | -52.0 |
| 1，1，3，3-四甲基胍 | 40 | 2 | 1.5 | 8.7 | 3.4 | -54.7 |
| CH3C(＝NCH2CH2OH)CH2C(O)N(CH3)2 | 70 | 1 | 24 | 10.9 | 6.2 | -64.4 |
| CH3C(＝NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2 | 70 | 1 | 36 | 10.7 | 0.32 | -98.2 |
| CH3C(＝NH)CH2C(O)CH3 | 40 | 2 | 13.68 | 7.9 | 4.4 | -41.3 |
实施例2
对含有亚氨基二乙酸防腐剂的清洗剂2进行了污染试验。被清洗的半导体晶片具有铜和硅膜。清洗作业结束后，用25℃的去离子水冲洗晶片约15分钟。所得到的二级离子质谱数据(SIMS)如下所示：
| Cu(原子/cm2) | F(原子/cm2) | C(原子/cm2) | CuxO(A) | |
| 未清洗晶片 | 1.6×1010 | 3.3×1013 | 7.5×1013 | 42 |
| 清洗过的晶片 | 8.5×109 | 5.1×1013 | 1.5×1013 | 15 |
上述的结果说明，通过清洗过程，铜氧化物CuxO已被有效除去，另一方面，主要由清洗剂中的有机防腐剂引起的碳污染大大减少。
尽管参照具体的特征、方面和实施方案说明了本发明，但应该理解本发明不因此而受到限制。因此，本发明可以通过相应变化成分和最终应用，在大量组合物中得到相应的具体体现。因此，在下面所要求的本发明的精神和范围内，本发明应理解为包括所有这样的变化、改进和选择的实施方案。
Claims (26)
1.一种半导体晶片清洗剂，用在等离子体灰化制造半导体之后，其按所示的以清洗剂的总重量为基准的重量百分数范围含有下面的成分：
有机胺 2-98％
水 0-50％
1，3-二羰基化合物螯合剂 0.1-60％
另外的不同金属螯合剂 0-25％
含氮羧酸或亚胺 0.5-40％
极性有机溶剂 2-98％
总计 100％。
2.如权利要求1所述的清洗剂，其中所述的有机胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
五甲基二亚乙基三胺 5-95％
三乙醇胺 5-95％。
3.如权利要求1所述的清洗剂，其中所述的1，3-二羰基化合物螯合剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
2，4-戊二酮 2-60％
N，N-二甲基乙酰乙酰胺 2-60％
乙酰乙酸甲酯 15-60％
丙二酸二甲酯 10-48.3％。
4.如权利要求1所述的清洗剂，其中所述的含氮羧酸或亚胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
亚氨基二乙酸 0.5-2.5％
甘氨酸 0.5-2.5％
次氮基三乙酸 0.5-2.5％
1，1，3，3-四甲基胍 0.5-2.5％。
5.如权利要求1所述的清洗剂，其中所述的极性有机溶剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的溶剂种类：
乙二醇 2-74％
N-甲基吡咯烷酮 2-49％
环丁砜 2-10％。
6.如权利要求1所述的清洗剂，其中所述的另外的不同金属螯合剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的物质种类：
吡咯烷二硫代氨基甲酸铵 0-25％
氨基甲酸铵 0-15％
草酸铵 0-15％
硫氰酸铵 0-15％
硫代硫酸铵 0-15％
三氟乙酸 0-12％。
7.如权利要求1所述的清洗剂，其中所述的有机胺包括选自下面的物质种类：
单乙醇胺
二乙二醇胺
五甲基二亚乙基三胺
三乙醇胺
二氮杂双环(2.2.2)辛烷
二亚乙基三胺
3，3’-亚氨基双(N，N-二甲基丙胺)
N-甲基咪唑
四亚乙基五胺
三亚乙基四胺
三甲氧基乙氧基乙胺
二乙醇胺
甲基二乙醇胺
四甲基己二胺
N，N-二乙基乙醇胺。
8.如权利要求1所述的清洗剂，其中所述的1，3-二羰基化合物螯合剂包括选自下面的化合物：
2，4-戊二酮
乙酰乙酸甲酯
丙二酸二甲酯
N-甲基乙酰乙酰胺
N，N-二甲基乙酰乙酰胺
乙酰乙酰胺
丙二酰胺。
9.如权利要求1所述的清洗剂，其中所述的含氮羧酸或亚胺选自下面的物质：
亚氨基二乙酸
甘氨酸
次氮基三乙酸
1，1，3，3-四甲基胍
CH3C(＝NCH2CH2OH)CH2C(O)N(CH3)2
CH3C(＝NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2
CH3C(＝NH)CH2C(O)CH3
(CH3CH2)2NC(＝NH)N(CH3CH2)2
HOOCCH2N(CH3)2
HOOCCH2N(CH3)CH2COOH。
10.如权利要求1所述的清洗剂，其中所述的有机胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
五甲基二亚乙基三胺 5-95％
三乙醇胺 5-95％，
所述的1，3-二羰基化合物螯合剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
2，4-戊二酮 2-60％
N，N-二甲基乙酰乙酰胺 2-60％
乙酰乙酸甲酯 15-60％
丙二酸二甲酯 10-48.3％，
所述的含氮羧酸或亚胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
亚氨基二乙酸 0.5-2.5％
甘氨酸 0.5-2.5％
次氮基三乙酸 0.5-2.5％
1，1，3，3-四甲基胍 0.5-2.5％，
以及所述的极性有机溶剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的溶剂种类：
乙二醇 2-74％
N-甲基吡咯烷酮 2-49％
环丁砜 2-10％。
11.如权利要求1所述的清洗剂，其含有具有下式的螯合剂：
X-CHR-Y，其中
R为氢或脂肪族基团，
X和Y为含有具有吸电子性质的多键合部分的官能团。
12.如权利要求11所述的清洗剂，其中X和Y各自独立地选自CONH2、CONHR’、CONR’R”、CN、NO2、SOR’或SO2Z，其中R’和R”为C1-C8烷基，Z为氢、卤素或C1-C8烷基。
13.如权利要求1所述的清洗剂，其中所述的含氮羧酸具有下式：
COOH-CH2-NRR’
其中，R和R’各自独立地选自氢、烷基、芳基和羧酸。
14.制造半导体晶片的方法，包括以下步骤：
等离子腐蚀晶片表面的金属化层；
等离子灰化晶片表面的抗蚀剂；
用半导体晶片清洗剂清洗晶片，所述的清洗剂按所示的以清洗剂的总重量为基准的重量百分数范围含有下面的成分：
有机胺 2-98％
水 0-50％
1，3-二羰基化合物螯合剂 0.1-60％
另外的不同金属螯合剂 0-25％
含氮羧酸或亚胺 0.5-40％
极性有机溶剂 2-98％
总计 100％。
15.如权利要求14所述的方法，其中所述的有机胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
五甲基二亚乙基三胺 5-95％
三乙醇胺 5-95％。
16.如权利要求14所述的方法，其中所述的1，3-二羰基化合物螯合剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
2，4-戊二酮 2-60％
N，N-二甲基乙酰乙酰胺 2-60％
乙酰乙酸甲酯 15-60％
丙二酸二甲酯 10-48.3％。
17.如权利要求14所述的方法，其中所述的含氮羧酸或亚胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
亚氨基二乙酸 0.5-2.5％
甘氨酸 0.5-2.5％
次氮基三乙酸 0.5-2.5％
1，1，3，3-四甲基胍 0.5-2.5％。
18.如权利要求14所述的方法，其中所述的极性有机溶剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的溶剂种类：
乙二醇 2-74％
N-甲基吡咯烷酮 2-49％
环丁砜 2-10％。
19.如权利要求14所述的方法，其中所述的另外的不同金属螯合剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
吡咯烷二硫代氨基甲酸铵 0-25％
氨基甲酸铵 0-15％
草酸铵 0-15％
硫氰酸铵 0-15％
硫代硫酸铵 0-15％
三氟乙酸 0-12％。
20.如权利要求14所述的方法，其中所述的有机胺包括选自下面的化合物：
五甲基二亚乙基三胺
单乙醇胺
二乙二醇胺
三乙醇胺
二氮杂双环(2.2.2)辛烷
二亚乙基三胺
3，3’-亚氨基双(N，N-二甲基丙胺)
N-甲基咪唑
四亚乙基五胺
三亚乙基四胺
三甲氧基乙氧基乙胺
二乙醇胺
甲基二乙醇胺
四甲基己二胺
N，N-二乙基乙醇胺。
21.如权利要求14所述的方法，其中所述的1，3-二羰基化合物螯合剂包括选自下面的化合物：
2，4-戊二酮
N，N-二甲基乙酰乙酰胺
乙酰乙酸甲酯
丙二酸二甲酯
N-甲基乙酰乙酰胺
乙酰乙酰胺
丙二酰胺。
22.如权利要求14所述的方法，其中所述的含氮羧酸或亚胺包括选自下面的化合物：
亚氨基二乙酸
甘氨酸
次氮基三乙酸
1，1，3，3-四甲基胍
CH3C(＝NCH2CH2OH)CH2C(O)N(CH3)2
CH3C(＝NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2
CH3C(＝NH)CH2C(O)CH3
(CH3CH2)2NC(＝NH)N(CH3CH2)2
HOOCCH2N(CH3)2
HOOCCH2N(CH3)CH2COOH。
23.如权利要求14所述的方法，其中所述的有机胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
五甲基二亚乙基三胺 5-95％
三乙醇胺 5-95％，
所述的1，3-二羰基化合物螯合剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
2，4-戊二酮 2-60％
N，N-二甲基乙酰乙酰胺 2-60％
乙酰乙酸甲酯 15-60％
丙二酸二甲酯 10-48.3％，
所述的含氮羧酸或亚胺按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
亚氨基二乙酸 0.5-2.5％
甘氨酸 0.5-2.5％
次氮基三乙酸 0.5-2.5％
1，1，3，3-四甲基胍 0.5-2.5％，
以及所述的极性有机溶剂按所示的以清洗剂的总重量为基准的重量百分数包括选自下面的化合物：
乙二醇 2-74％
N-甲基吡咯烷酮 2-49％
环丁砜 2-10％。
24.如权利要求14所述的方法，其中的清洗剂含有具有下式的螯合剂：
X-CHR-Y，其中
R为氢或脂肪族基团，
X和Y为含有具有吸电子性质的多键合部分的官能团。
25.如权利要求24所述的方法，其中X和Y各自独立地选自CONH2、CONHR’、CONR’R”、CN、NO2、SOR’或SO2Z，其中R’和R”为C1-C8烷基，Z为氢、卤素或C1-C8烷基。
26.如权利要求14所述的方法，包括具有下式的含氮羧酸：
COOH-CH2-NRR’
其中，R和R’各自独立地选自氢、烷基、芳基和羧酸。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108291314A (zh) * | 2015-11-19 | 2018-07-17 | Oci有限公司 | 铜蚀刻用组合物及过氧化氢类金属蚀刻用组合物 |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6755989B2 (en) * | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6344432B1 (en) | 1999-08-20 | 2002-02-05 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US6566315B2 (en) * | 2000-12-08 | 2003-05-20 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US20030119692A1 (en) * | 2001-12-07 | 2003-06-26 | So Joseph K. | Copper polishing cleaning solution |
| US6849200B2 (en) * | 2002-07-23 | 2005-02-01 | Advanced Technology Materials, Inc. | Composition and process for wet stripping removal of sacrificial anti-reflective material |
| GB2401604A (en) * | 2003-05-10 | 2004-11-17 | Reckitt Benckiser Nv | Water-softening product |
| WO2004107422A2 (en) * | 2003-05-27 | 2004-12-09 | Ebara Corporation | Plating apparatus and plating method |
| US7241725B2 (en) * | 2003-09-25 | 2007-07-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Barrier polishing fluid |
| US7205235B2 (en) * | 2003-12-15 | 2007-04-17 | Freescale Semiconductor, Inc. | Method for reducing corrosion of metal surfaces during semiconductor processing |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US20060196525A1 (en) * | 2005-03-03 | 2006-09-07 | Vrtis Raymond N | Method for removing a residue from a chamber |
| CN101233456B (zh) * | 2005-06-07 | 2013-01-02 | 高级技术材料公司 | 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物 |
| US8387824B2 (en) * | 2005-07-02 | 2013-03-05 | Syngenta Participations Ag | Apparatuses and methods for bulk dispensing |
| EP1932174A4 (en) * | 2005-10-05 | 2009-09-23 | Advanced Tech Materials | AQUEOUS OXIDIZING CLEANER FOR REMOVING RESIDUES AFTER A PLASMA ATTACK |
| CN101473073B (zh) * | 2006-04-26 | 2012-08-08 | 高级技术材料公司 | 半导体加工系统的清洁 |
| US20080142039A1 (en) * | 2006-12-13 | 2008-06-19 | Advanced Technology Materials, Inc. | Removal of nitride deposits |
| JP5237300B2 (ja) * | 2006-12-21 | 2013-07-17 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | エッチング後残留物を除去するための液体洗浄剤 |
| US20100112728A1 (en) * | 2007-03-31 | 2010-05-06 | Advanced Technology Materials, Inc. | Methods for stripping material for wafer reclamation |
| CN101785087A (zh) * | 2007-08-22 | 2010-07-21 | 大金工业株式会社 | 半导体干式工艺后的残渣除去液和使用该残渣除去液的残渣除去方法 |
| EP2191041A4 (en) * | 2007-09-06 | 2013-07-17 | Ekc Technology Inc | COMPOSITIONS AND PROCESS FOR TREATING COPPER SURFACE |
| KR101755970B1 (ko) | 2008-02-11 | 2017-07-07 | 엔테그리스, 아이엔씨. | 이온 공급원 챔버를 포함하는 이온 주입 시스템의 성능 향상 및 수명 연장 방법 |
| CN102044407B (zh) * | 2009-10-20 | 2012-04-18 | 中芯国际集成电路制造(上海)有限公司 | 芯片的清洗方法 |
| US8101561B2 (en) * | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
| US8128755B2 (en) | 2010-03-03 | 2012-03-06 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Cleaning solvent and cleaning method for metallic compound |
| JP2012021151A (ja) * | 2010-06-16 | 2012-02-02 | Sanyo Chem Ind Ltd | 銅配線半導体用洗浄剤 |
| TWI548738B (zh) | 2010-07-16 | 2016-09-11 | 安堤格里斯公司 | 用於移除蝕刻後殘餘物之水性清潔劑 |
| JP6101421B2 (ja) | 2010-08-16 | 2017-03-22 | インテグリス・インコーポレーテッド | 銅または銅合金用エッチング液 |
| WO2012048079A2 (en) | 2010-10-06 | 2012-04-12 | Advanced Technology Materials, Inc. | Composition and process for selectively etching metal nitrides |
| JP5933950B2 (ja) | 2011-09-30 | 2016-06-15 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | 銅または銅合金用エッチング液 |
| WO2013101907A1 (en) | 2011-12-28 | 2013-07-04 | Advanced Technology Materials, Inc. | Compositions and methods for selectively etching titanium nitride |
| CN104508072A (zh) | 2012-02-15 | 2015-04-08 | 安格斯公司 | 用于cmp后去除的组合物及使用方法 |
| SG10201610541UA (en) | 2012-05-18 | 2017-01-27 | Entegris Inc | Composition and process for stripping photoresist from a surface including titanium nitride |
| US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
| TWI655273B (zh) | 2013-03-04 | 2019-04-01 | 美商恩特葛瑞斯股份有限公司 | 選擇性蝕刻氮化鈦之組成物及方法 |
| US10920141B2 (en) | 2013-06-06 | 2021-02-16 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
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| KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| US20160340620A1 (en) | 2014-01-29 | 2016-11-24 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
| WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
| US9957469B2 (en) * | 2014-07-14 | 2018-05-01 | Versum Materials Us, Llc | Copper corrosion inhibition system |
| KR101669772B1 (ko) * | 2015-11-19 | 2016-10-27 | 오씨아이 주식회사 | 구리 식각용 조성물 |
| CN109920729B (zh) * | 2019-03-27 | 2022-12-02 | 合肥鑫晟光电科技有限公司 | 一种显示基板的制备方法、显示装置 |
| CN113736574A (zh) * | 2021-09-27 | 2021-12-03 | 北京中铁富红企业管理有限责任公司 | 一种动车清洗用清洗剂及其制备方法和动车清洗方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69231971T2 (de) | 1991-01-24 | 2002-04-04 | Wako Pure Chem Ind Ltd | Lösungen zur Oberflächenbehandlung von Halbleitern |
| TW274630B (zh) | 1994-01-28 | 1996-04-21 | Wako Zunyaku Kogyo Kk | |
| JP3074634B2 (ja) * | 1994-03-28 | 2000-08-07 | 三菱瓦斯化学株式会社 | フォトレジスト用剥離液及び配線パターンの形成方法 |
| JP3548237B2 (ja) | 1994-08-29 | 2004-07-28 | シャープ株式会社 | 薄膜トランジスタ |
| KR100429440B1 (ko) | 1995-07-27 | 2004-07-15 | 미쓰비시 가가꾸 가부시키가이샤 | 기체의표면처리방법및그에사용되는표면처리조성물 |
| EP0783034B1 (en) * | 1995-12-22 | 2010-08-18 | Mitsubishi Rayon Co., Ltd. | Chelating agent and detergent comprising the same |
| WO1998022568A1 (en) | 1996-11-22 | 1998-05-28 | Advanced Chemical Systems International, Inc. | Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning |
| WO1998028395A1 (en) | 1996-12-24 | 1998-07-02 | Advanced Chemical Systems International, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
| US6030491A (en) | 1997-08-19 | 2000-02-29 | Micron Technology, Inc. | Processing compositions and methods of using same |
| US6211126B1 (en) * | 1997-12-23 | 2001-04-03 | Advanced Technology Materials, Inc. | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
| CA2332390A1 (en) | 1998-05-18 | 1999-11-25 | Advanced Technology Materials, Inc. | Stripping compositions for semiconductor substrates |
| US6248704B1 (en) * | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
| US6344432B1 (en) | 1999-08-20 | 2002-02-05 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US6566315B2 (en) * | 2000-12-08 | 2003-05-20 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
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- 2001-12-04 DE DE60129465T patent/DE60129465T2/de not_active Expired - Lifetime
- 2001-12-04 CN CNB018213561A patent/CN1244719C/zh not_active Expired - Fee Related
- 2001-12-04 KR KR1020037007701A patent/KR100890418B1/ko not_active IP Right Cessation
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108291314A (zh) * | 2015-11-19 | 2018-07-17 | Oci有限公司 | 铜蚀刻用组合物及过氧化氢类金属蚀刻用组合物 |
| CN108291314B (zh) * | 2015-11-19 | 2020-09-11 | Oci有限公司 | 铜蚀刻用组合物及过氧化氢类金属蚀刻用组合物 |
Also Published As
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| US20020065204A1 (en) | 2002-05-30 |
| JP2004527105A (ja) | 2004-09-02 |
| KR100890418B1 (ko) | 2009-03-26 |
| US20020013238A1 (en) | 2002-01-31 |
| EP1349969A1 (en) | 2003-10-08 |
| CN1483093A (zh) | 2004-03-17 |
| DE60129465T2 (de) | 2008-04-17 |
| EP1349969B1 (en) | 2007-07-18 |
| US6660700B2 (en) | 2003-12-09 |
| DE60129465D1 (de) | 2007-08-30 |
| JP4091433B2 (ja) | 2008-05-28 |
| US6344432B1 (en) | 2002-02-05 |
| WO2002057513A1 (en) | 2002-07-25 |
| EP1349969A4 (en) | 2004-07-28 |
| KR20040007422A (ko) | 2004-01-24 |
| TWI243861B (en) | 2005-11-21 |
| ATE367460T1 (de) | 2007-08-15 |
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