JP4498424B2 - 半導体基板上の無機残留物を洗浄するための、銅特異的な腐食防止剤を含有する水性洗浄組成物 - Google Patents
半導体基板上の無機残留物を洗浄するための、銅特異的な腐食防止剤を含有する水性洗浄組成物 Download PDFInfo
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- JP4498424B2 JP4498424B2 JP2008044411A JP2008044411A JP4498424B2 JP 4498424 B2 JP4498424 B2 JP 4498424B2 JP 2008044411 A JP2008044411 A JP 2008044411A JP 2008044411 A JP2008044411 A JP 2008044411A JP 4498424 B2 JP4498424 B2 JP 4498424B2
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- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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Description
本出願は、1997年4月25日に出願された米国仮特許出願第60/044,824号および1997年1月9日に出願された米国仮特許出願第60/034,194号の優先権を主張する、1997年8月29日に出願された米国特許出願第08/924,021号の利益を主張するものである。更に本出願は、1997年8月29日に出願された先願である米国特許出願第08/924,021号の優先権を主張するものであり、かつ実質的な部分が当該先願と共通している。本出願には、当該先願に記載されている発明者名が記載されており、したがって、本出願は当該先願の一部継続出願となる。先願である、1997年8月29日に出願された米国特許出願第08/924,021号、1997年4月25日に出願された米国仮出願第60/044,824号、および1997年1月9日に出願された米国仮出願第60/034,194号の記載内容を、本出願に援用する。
フッ化物源(例えばフッ化アンモニウムおよび/またはその誘導体) 1〜21%
有機アミン 20〜55%
含窒素カルボン酸およびイミンから選択される含窒素成分 0.5〜40%
水 23〜50%
金属キレート剤 0〜21%
計 100%
本発明のこのような配合物により、プラズマアッシング工程後の無機残留物が効果的に除去される。
フッ化物源 1〜21%
有機アミン 20〜55%
含窒素カルボン酸およびイミンから選択される含窒素成分 0.5〜40%
水 23〜50%
金属キレート剤 0〜21%
計 100%
上述の配合物の成分は、任意の好適な種類または化学種であってもよいことが当業者らに理解されよう。好ましい配合成分の具体例を、配合物の構成要素ごとに以下に説明する。
ジグリコールアミン(DGA)
メチルジエタノールアミン(MDEA)
ペンタメチルジエチレントリアミン(PMDETA)
トリエタノールアミン(TEA)
トリエチレンジアミン(TEDA)
非常に有利な他のアミンを挙げる。
ヘキサメチレンテトラミン
3,3−イミノビス(N,N−ジメチルプロピルアミン)
モノエタノールアミン
具体的な好ましいフッ化物源を挙げる。
フッ化アンモニウム
トリエタノールアンモニウムフルオリド(TEAF)
非常に有利な他のフッ化物源を挙げる。
ジグリコールアンモニウムフルオリド(DGAF)
テトラメチルアンモニウムフルオリド(TMAF)
トリエチルアミン三フッ化水素塩(TREAT−HF)
具体的な好ましい含窒素カルボン酸およびイミンを挙げる。
イミノ二酢酸
グリシン
ニトリロトリ酢酸
1,1,3,3−テトラメチルグアニジン
本発明の配合物に有利に利用できる他の含窒素カルボン酸またはイミンを挙げる。
CH3C(=NCH2CH2OH)CH2C(O)N(CH3)2
CH3C(=NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2
CH3C(=NH)CH2C(O)CH3
(CH3CH2)2NC(=NH)N(CH3CH2)2
HOOCCH2N(CH3)2
HOOCCH2N(CH3)CH2COOH
具体的な好ましい金属キレート剤を挙げる。
アセトアセトアミド
カルバミン酸アンモニウム
ピロリジンジチオカルバミン酸アンモニウム(APDC)
マロン酸ジメチル
アセト酢酸メチル
N−メチルアセトアセトアミド
2,4−ペンタンジオン
チオ安息香酸テトラメチルアンモニウム
トリフルオロ酢酸テトラメチルアンモニウム
テトラメチルチウラムジスルフィド(TMTDS)
上述したように、フッ化アンモニウムまたは置換されたフッ化物源とアミン(界面活性剤として1%以下の量で存在するアミンを除く)とを組み合わせることにより、フッ化アンモニウムまたはアミンのどちらか一方を単独で含む配合物に比べて腐食性が抑えられながらも剥離性が向上する。しかも、結果として得られるアルカリ性溶液は、従来のアミン含有配合物よりも低い処理温度(例えば21°〜40℃)で効果を発揮する。
a.トリエタノールアミン 4.5%
フッ化アンモニウム 0.5%
水 95%
b.PMDETA 3.8〜4.5%
フッ化アンモニウム 0.5%
2,4−ペンタンジオン 1%
水 94〜94.7%
c.TEA 1.7%
PMDETA 1.5%
TEAHF 2%
イミノ二酢酸 0.4%
二フッ化アンモニウム 0.5%
水 93.9%
d.TEA 3.5%
PMDETA 1.5%
2,4−ペンタンジオン 1.35%
フッ化アンモニウム 1.2%
水 92.45%
e.TEA 7%
PMDETA 3%
2,4−ペンタンジオン 2.7%
フッ化アンモニウム 2.4%
水 84.9%
ウエハは薬液中に浸漬してもよく、あるいは、スプレーまたはブラシ洗浄装置によって薬液をウエハ表面に適用してもよい。図5は、標準的な浸漬処理により得られた結果を表すSEMを示すものである。図5は特に、アルミナスラリーCMP後に配合物c中に30℃で10分間浸漬したタングステンプラグを示すものである。また、エッチング速度のデータにより、露出した材料に対する選択性が示されるであろう。図6および表3は、電解メッキされた銅膜を含む配線材料上における材料エッチング速度を示すものである。
Claims (17)
- 半導体ウエハから化学機械研磨(CMP)後に残留するスラリー粒子を除去する方法であって、(i)フッ化物源、(ii)少なくとも1種の有機アミン、(iii)含窒素カルボン酸またはイミン、(iv)水、および任意に少なくとも1種の金属キレート剤を含む洗浄配合物を用いて前記ウエハを洗浄する工程を含む、方法。
- 前記スラリー粒子は金属酸化物を含む、請求項1に記載の方法。
- 半導体ウエハから化学機械研磨(CMP)後に残留するスラリー粒子を除去する方法であって、洗浄配合物を用いて前記ウエハを洗浄する工程を含み、
前記洗浄配合物が、以下の成分を、前記成分の総重量を基準とする以下に示す重量百分率の範囲で含む、方法。
フッ化物源 1〜21%
有機アミン 20〜55%
含窒素カルボン酸およびイミンから選択される含窒素成分 0.5〜40%
水 23〜50%
金属キレート剤 0〜21%
計 100% - アセトアセトアミド、
カルバミン酸アンモニウム、
ピロリジンジチオカルバミン酸アンモニウム(APDC)、
マロン酸ジメチル、
アセト酢酸メチル、
N−メチルアセトアセトアミド、
2,4−ペンタンジオン、
チオ安息香酸テトラメチルアンモニウム、
トリフルオロ酢酸テトラメチルアンモニウム、および
テトラメチルチウラムジスルフィド(TMTDS)
からなる群から選択される少なくとも1種の金属キレート剤を含む、請求項1に記載の方法。 - 前記フッ化物源が、
フッ化アンモニウム、
トリエタノールアンモニウムフルオリド(TEAF)、
ジグリコールアンモニウムフルオリド(DGAF)、
テトラメチルアンモニウムフルオリド(TMAF)、および
トリエチルアミン三フッ化水素塩(TREAT−HF)
からなる群から選択される種類のものを含む、請求項1に記載の方法。 - 前記有機アミンが、
ジグリコールアミン(DGA)、
メチルジエタノールアミン(MDEA)、
ペンタメチルジエチレントリアミン(PMDETA)、
トリエタノールアミン(TEA)、
トリエチレンジアミン(TEDA)、
ヘキサメチレンテトラミン、
3,3−イミノビス(N,N−ジメチルプロピルアミン)、および
モノエタノールアミン
からなる群から選択されるアミンを含む、請求項1に記載の方法。 - 前記含窒素成分が、
イミノ二酢酸(IDA)、
グリシン、
ニトリロトリ酢酸(NTA)、
1,1,3,3−テトラメチルグアニジン(TMG)、
CH3C(=NCH2CH2OH)CH2C(O)N(CH3)2、
CH3C(=NCH2CH2OCH2CH2OH)CH2C(O)N(CH3)2、
CH3C(=NH)CH2C(O)CH3、
(CH3CH2)2NC(=NH)N(CH3CH2)2、
HOOCCH2N(CH3)2、
HOOCCH2N(CH3)CH2COOH
からなる群からの種類のものを含む、請求項1に記載の方法。 - 前記フッ化物源が、
フッ化アンモニウム、
トリエタノールアンモニウムフルオリド(TEAF)、
ジグリコールアンモニウムフルオリド(DGAF)、
テトラメチルアンモニウムフルオリド(TMAF)、および
トリエチルアミン三フッ化水素塩(TREAT−HF)
からなる群から選択される種類のものを含み、前記有機アミンが、
ジグリコールアミン(DGA)、
メチルジエタノールアミン(MDEA)、
ペンタメチルジエチレントリアミン(PMDETA)、
トリエタノールアミン(TEA)、
トリエチレンジアミン(TEDA)、
ヘキサメチレンテトラミン、
3,3−イミノビス(N,N−ジメチルプロピルアミン)、および
モノエタノールアミン
からなる群から選択される種類のものを含み、前記含窒素成分が、
イミノ二酢酸(IDA)、
グリシン、
ニトリロトリ酢酸(NTA)、
1,1,3,3−テトラメチルグアニジン(TMG)
からなる群から選択される種類のものを含み、かつ前記配合物が、
アセトアセトアミド、
カルバミン酸アンモニウム、
ピロリジンジチオカルバミン酸アンモニウム(APDC)、
マロン酸ジメチル、
アセト酢酸メチル、
N−メチルアセトアセトアミド、
2,4−ペンタンジオン、
チオ安息香酸テトラメチルアンモニウム、
トリフルオロ酢酸テトラメチルアンモニウム、および
テトラメチルチウラムジスルフィド(TMTDS)
からなる群から選択される種類のものを含む金属キレート剤を含む、請求項1に記載の方法。 - 前記フッ化物源が、一般式R1R2R3R4NF(式中、R基は、それぞれ独立に、水素原子および脂肪族基から選択される)を有する化合物を含み、かつ前記配合物が、式:
X−CHR−Y
(式中、Rは、水素またはC1−C8アルキル、アリールあるいはアルケニル基のいずれかであり、
XおよびYは、電子求引性を有する多重結合部分を含む官能基である)
の金属キレート剤を含む、請求項1に記載の方法。 - XおよびYが、それぞれ独立に、CONH2、CONHR’、CN、NO2、SOR’、およびSO2Z(式中、R’はアルキルであり、Zは、水素、ハロゲン、またはC1−C8アルキルである)から選択される、請求項9に記載の方法。
- 前記フッ化物源が、式R1R2R3R4NF(式中、R基は、それぞれ、水素または脂肪族である)を有する化合物を含み、かつ前記配合物が、式R1R2R3R4N+−O2CCF3(式中、R基は、それぞれ独立に、水素またはC1−C8アルキル、アリールあるいはアルケニルである)の金属キレート剤を含む、請求項1に記載の方法。
- 前記含窒素成分が、式:
COOH−CH2−NRR’
(式中、RおよびR’は、それぞれ独立に、水素、アルキル、アリール、およびカルボン酸からなる群から選択される)を有する化合物を含む、請求項1に記載の方法。 - 前記フッ化物源が、トリエタノールアンモニウムフルオリド(TEAF)を含む、請求項1に記載の方法。
- 前記有機アミンが、メチルジエタノールアミン(MDEA)を含む、請求項1に記載の方法。
- 前記有機アミンが、ペンタメチルジエチレントリアミン(PMDETA)を含む、請求項1に記載の方法。
- 前記有機アミンが、トリエタノールアミン(TEA)を含む、請求項1に記載の方法。
- 前記含窒素成分が、イミノ二酢酸(IDA)を含む、請求項1に記載の方法。
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US09/818,073 US6755989B2 (en) | 1997-01-09 | 2001-03-27 | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
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JP2000208467A (ja) * | 1999-01-14 | 2000-07-28 | Mitsubishi Gas Chem Co Inc | 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法 |
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DE3414013A1 (de) * | 1984-04-12 | 1985-10-24 | Jürgen 1000 Berlin Kutzner | Transportable unterkunft |
US5094701A (en) * | 1990-03-30 | 1992-03-10 | Air Products And Chemicals, Inc. | Cleaning agents comprising beta-diketone and beta-ketoimine ligands and a process for using the same |
US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
US5466389A (en) * | 1994-04-20 | 1995-11-14 | J. T. Baker Inc. | PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates |
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2002
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- 2002-03-27 CN CNB028072367A patent/CN100343361C/zh not_active Expired - Fee Related
- 2002-03-27 KR KR1020037012385A patent/KR100874173B1/ko not_active IP Right Cessation
- 2002-03-27 WO PCT/US2002/009401 patent/WO2002077120A1/en active Application Filing
- 2002-03-27 EP EP02717727A patent/EP1381656B1/en not_active Expired - Lifetime
- 2002-03-27 AT AT02717727T patent/ATE487776T1/de active
- 2002-03-27 CN CN200710147183XA patent/CN101134930B/zh not_active Expired - Fee Related
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998030667A1 (en) * | 1997-01-09 | 1998-07-16 | Advanced Technology Materials, Inc. | Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine |
JP2000208467A (ja) * | 1999-01-14 | 2000-07-28 | Mitsubishi Gas Chem Co Inc | 半導体基板洗浄液およびそれを用いた半導体基板の洗浄方法 |
Also Published As
Publication number | Publication date |
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WO2002077120A1 (en) | 2002-10-03 |
EP1381656A1 (en) | 2004-01-21 |
CN101134930B (zh) | 2011-04-13 |
DE60238244D1 (de) | 2010-12-23 |
CN1500130A (zh) | 2004-05-26 |
KR20030093274A (ko) | 2003-12-06 |
KR100874173B1 (ko) | 2008-12-15 |
JP2005502734A (ja) | 2005-01-27 |
JP4456330B2 (ja) | 2010-04-28 |
CN101134930A (zh) | 2008-03-05 |
ATE487776T1 (de) | 2010-11-15 |
JP2008219009A (ja) | 2008-09-18 |
EP1381656A4 (en) | 2007-06-13 |
EP1381656B1 (en) | 2010-11-10 |
CN100343361C (zh) | 2007-10-17 |
TWI258501B (en) | 2006-07-21 |
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