CN1531092A - 树脂密封型半导体装置及其制造方法 - Google Patents

树脂密封型半导体装置及其制造方法 Download PDF

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CN1531092A
CN1531092A CNA200410007450XA CN200410007450A CN1531092A CN 1531092 A CN1531092 A CN 1531092A CN A200410007450X A CNA200410007450X A CN A200410007450XA CN 200410007450 A CN200410007450 A CN 200410007450A CN 1531092 A CN1531092 A CN 1531092A
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semiconductor chip
resin
plate portion
backing plate
termal conductivity
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CN100388485C (zh
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落合公
武真人
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Kanto Sanyo Semiconductors Co Ltd
Sanyo Electric Co Ltd
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Abstract

一种树脂密封型半导体装置及其制造方法，即使将发热量大的第一半导体芯片和发热量小的第二半导体芯片一体地由树脂密封，也没有影响。由在各外引线25A、25A…上引线接合外部电极引出用的焊盘16、16的发热量大的第一半导体芯片15和在各外引线25B、25B…上引线接合外部电极引出用焊盘18、18的比第一半导体芯片放发量小的第二半导体芯片17形成，利用高导热性树脂28模制所述第一半导体芯片15，并利用非高导热性树脂31一体地模制第二半导体芯片17和由高导热性树脂模制的第一半导体芯片15。

Description

树脂密封型半导体装置及其制造方法
技术领域
本发明涉及利用树脂将由双极晶体管等形成的发热量大的半导体芯片和由MOS晶体管等形成的微型处理器等发热量小的LSI芯片模制在同一封装中的树脂密封型半导体装置及其制造方法。
背景技术
在电视接收机等使用的半导体装置中，将形成对接收的信号的进行放大的功率放大电路等的半导体芯片等和形成对这些功率放大电路等进行各种控制的微型处理器等的LSI芯片由同一树脂一体地模制。
另外，在电机中，将向线圈中供给电流的功率用半导体芯片和由MOSFET形成的、控制所述功率用半导体芯片的控制用半导体芯片由同一树脂一体地模制。这样一体地树脂密封功率用半导体芯片和控制用半导体芯片的复合树脂密封型半导体装置正在广泛使用。
图7及图8是现有复合树脂密封型半导体装置的剖面图及平面图。形成功率放大电路等的半导体芯片1由双极型晶体管构成。这些半导体芯片1被接合在引线架2的垫板部2A，半导体芯片1的外部电极引出用焊盘3、3...通过金属细线6、6...被引线接合在引线架2上具有的外引线5、5...上。
同样，形成微型处理器等的LSI芯片7由MOSFET构成。这些LSI芯片7被接合在引线架2的垫板部2B上，LSI芯片7的外部电极引出用焊盘9、9通过金属细线10、10被引线接合在引线架具有的外引线5、5...上。
引线架2上安装的半导体芯片1和IC芯片7除被引线接合的外引线5、5...分别被放入成型模型中，并通过注入模制树脂11在该成型模型中传递模模制。
(专利文献1)
特开2001-24001号公报
发明内容
在现有的树脂密封型半导体装置中，将由形成对信号进行放大的功率放大电路等的双极晶体管构成的集成电路芯片和由MOS型晶体管构成的集成电路芯片用同一树脂一体地模制。
但是，由于形成功率放大电路等的半导体芯片的发热量大，故发出的热必须用导热系数好的树脂传到封装外部进行放热。但是，由于高导热性树脂和通常用于树脂密封的非高导热性树脂比较，价格较高，故成本增加。
另外，为了形成高导热性树脂，要在树脂中混入氧化铝，弹性模量与通常使用的低应力树脂相比，应力变大，会给模制的半导体芯片带来变形。
本发明提供一种树脂密封型半导体装置及其制造方法，其即使由树脂一体地密封发热量大的第一半导体芯片和比第一半导体芯片的发热量小的第二半导体芯片也没有影响，
本发明的树脂密封型半导体装置包括：引线架，其由第一垫板部和第二垫板部及对应各垫板部设置的外引线构成；发热量大的第一半导体芯片，其装在所述第一垫板部，并和与其外部电极引出用焊盘对应的所述外引线引线接合；比所述第一半导体芯片发热量小的第二半导体芯片，其装在所述第二垫板部，并和与其外部电极引出用焊盘对应的所述外引线引线接合，所述第一半导体芯片由高导热性树脂树脂密封，并将所述第二半导体芯片及由所述高导热性树脂树脂密封的所述第一半导体芯片由非高导热性树脂一体树脂密封。
本发明的制造方法是，准备由第一垫板部和第二垫板部及对应各垫板部设置的外引线构成的引线架；将发热量大的第一半导体芯片装在所述第一垫板部，并和该第一半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；由高导热性树脂将所述第一半导体芯片传递模模制；将比所述第一半导体芯片发热量小的第二半导体芯片装在所述第二垫板部，并和该第二半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；将由所述高导热性树脂模制的所述第一半导体芯片和所述第二半导体芯片由非高导热性树脂一体模制。
另外，本发明的制造方法是，准备由第一垫板部和第二垫板部及对应各垫板部设置的外引线构成的引线架；将发热量大的第一半导体芯片装在所述第一垫板部，并和该第一半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；由高导热性树脂通过灌封模制所述第一半导体芯片；将比所述第一半导体芯片发热量小的第二半导体芯片装在所述第二垫板部，并和该第二半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；将由所述高导热性树脂模制的所述第一半导体芯片和所述第二半导体芯片由非高导热性树脂一体模制。
附图说明
图1是显示本发明树脂密封型半导体装置的剖面图；
图2是显示本发明树脂密封型半导体装置的平面图；
图3是显示本发明树脂密封型半导体装置制造方法的图，图3(A)～图3(J)是显示制造过程的流程图；
图4是显示在本发明及现有树脂密封型半导体装置及其制造方法中使用的树脂的成分及性能等的表；
图5是显示本发明另一实施例的树脂密封型半导体装置的剖面图；
图6是显示本发明另一实施例的树脂密封型半导体装置制造方法的图示，图6(A)～图6(I)是显示制造过程的流程图；
图7是显示现有树脂密封型半导体装置的剖面图；
图8是显示现有树脂密封型半导体装置的平面图。
具体实施方式
参照图1～图6说明本发明树脂密封型半导体装置及其制造方法。
图1是显示本发明树脂密封型半导体装置的剖面图，图2同样是本发明树脂密封型半导体装置及本发明树脂密封型半导体装置主要部分的平面图。第一半导体芯片15是由双极晶体管构成的电视接收机使用的功率放大电路或向电机线圈供给电流的电机电路等的功率用集成电路，由于消耗功率大，故发热大。在第一半导体芯片15上设置有外部电极引出用的多个焊盘16、16...。
第二半导体芯片17是由在电视接收机的频道控制等各种控制中使用的MOS型晶体管构成的LSI，实际上使用微型处理器，在第二半导体芯片17上也设置有外部电极引出用的多个焊盘18、18...。第二半导体芯片17与第一半导体芯片15相比，发热量小，但对树脂应力的敏感度高，容易受应变及热的影响。
第一半导体芯片15被装在引线架20的第一垫板部20A上，第二半导体芯片17被装片在引线架20的第二垫板部20B上，并被收纳在树脂封装22中。
所述第一垫板部20A和第二垫板部20B可以设置在不同的引线架上，但是，设置在同一引线架20上时，形成细的连杆20C，热传导降低。
第一半导体芯片15的各焊盘16、16...介由金属细线26、26...被引线接合到引线架20上设置的对应的外引线25A、25A...。同样的，第二半导体芯片17的各焊盘18、18...介由金属细线30、30...被引线接合到引线架20上设置的对应的外引线25B、25B...。
在引线架20上安装的第一半导体芯片15及第二半导体芯片17，在各焊盘16、16...、18、18...被引线接合到外引线25A、25B...后，由树脂密封，形成一体，外引线25A、25B突出于外部。
但是，由于第一半导体芯片15发热量大，形成高温，故必须尽快将发出的热传递到外部并放热，使其不会传递到其它部位。与此相对，由于第二半导体芯片17发热少，故不会太形成高温。另外，第二半导体芯片17对应力的抵抗弱。但是，高导热性树脂与非高导热性树脂相比，价格高，且树脂应力大。
因此，本发明的特征在于，第一半导体芯片15仅将其局部由价格高的高导热性树脂28传递模模制，使发出的热很快地向外部放热。
然后，由高导热性树脂24树脂密封的第一半导体芯片15和第二半导体芯片17由通常使用的价格便宜且低应力的非高导热性树脂26一体地进行树脂密封。
图3是显示用树脂一体地树脂密封所述的第一半导体芯片15和第二半导体芯片17的制造过程的流程图。
如图3(A)所示，首先，准备由双极晶体管形成的发热量大的第一半导体芯片15。
如图3(B)所示，将第一半导体芯片15装在引线架20的第一垫板部20A上。
然后，如图3(C)所示，将第一半导体芯片的各焊盘16、16...和外引线25A、25B...用金属细线26、26...引线接合。
而后如图3(D)所示，除去外引线25A、25A...，仅将引线架20上安装的第一半导体芯片15设置在由模型形成的型腔内部，并向型腔内注入高导热性树脂28，将第一半导体芯片15树脂密封。
其次，如图3(E)所示，在树脂密封第一半导体芯片15后，准备由MOSFET构成的比第一半导体芯片发热量小的第二半导体芯片17。
如图3(F)所示，在引线架20的第二垫板部20B上安装第二半导体芯片17。
然后，如图3(G)所示，和所述相同，利用金属细线30、30...引线接合第二半导体芯片17的各焊盘18、18和外引线24B、25B。
接着，如图3(H)所示，由非高导热性树脂31将由所示高导热性树脂28传递模模制的第一半导体芯片15和第二半导体芯片17一体地传递模模制。
传递模模制的工序是，将安装在引线架20的第一垫板部20A上、由高导热性树脂28树脂密封的第一半导体芯片15和引线架20的第二垫板部20B上安装的第二半导体芯片17设置在由上下构成的模型形成的型腔内。然后，向型腔内注入非高导热性树脂31，树脂密封第一及第二半导体芯片15、17。
如图3(I)所示，在利用非高导热性树脂31一体地传递模模制第一半导体芯片15和第二半导体芯片17后，对由模制的非高导热性树脂31向外部突出的外引线25、25...部分进行镀敷。
如图3(J)所示，最后通过在表面印刷机种名及编号等，完成半导体装置。
图4是显示所述传递模模制使用的各种树脂的成分及特性的表。如表所示，模制第一半导体芯片的高导热性树脂28中，填料配合为氧化铝100％。导热系数为4.5W/m.K，比一般使用的非高导热性树脂31的0.63W/m.K大。
这样，高导热性树脂28由于导热系数格外地大，故由第一半导体芯片15产生的热经高导热性树脂28传递到外部并放热。从而，可防止第一半导体芯片15过热。
这样，由于第一半导体芯片15产生的热通过高导热性树脂28很快地向外部放热，故即使第二半导体芯片17被一体地树脂密封，也不会被传导热量。另外，由于第二半导体芯片17发热量小，故不会因其自身发热而过热。
高导热性树脂28虽然导热系数高，但与非高导热性树脂相比价格约高3倍以上，如果整体用高导热性树脂28模制，则半导体装置的价格会很高，但由于仅对第一半导体芯片15进行树脂模制，故使用量少，价格升高很小。
混合图4表中央所示的高导热性树脂和非高导热性树脂比现有的非高导热性树脂的导热系数好，但是，即使如此，导热系数仍不足于迅速将第一半导体芯片15产生的热放热。
另外，由于非高导热性树脂是硅系树脂，因此，与混入氧化铝的高导热性树脂比较，为低应力树脂。从而，在第二半导体芯片17上模制时的树脂应力低，防止带来第二半导体芯片17电路特性的变动或使其误动作。
图5是显示本发明树脂密封型半导体装置及其制造方法的另一实施例的剖面图。第一半导体芯片15和所述相同，由发热量大的双极晶体管构成，并设置有多个焊盘16、16...。另外，第二半导体芯片17是微型处理器，设置有多个焊盘18、18...。
第一半导体芯片15装在引线架20的第一垫板部20A上，第二半导体芯片17被装在引线架20的第二垫板部20B上，并被收纳在树脂封装22内。第一半导体芯片15和第二半导体芯片17安装在引线架20上后，由树脂密封形成一体。
由于第一半导体芯片15的发热量大，故产生的热必须尽快地传向外部放热。另一方面，由于第二半导体芯片17的发热量小，故不必过分加大放热。
由此，和所述相同，仅将第一半导体芯片15的局部用高导热性树脂32罐封，进行树脂密封，使产生的热迅速地放热到外部。由高导热性树脂32树脂密封的第一半导体芯片15和第二半导体芯片17由通常使用的非高导热性树脂31一体地树脂密封和图1所示的半导体装置相同。
但是，在图5所示的半导体装置中，取代由高导热性树脂32传递模模制第一半导体芯片15，通过罐封高导热性树脂32进行树脂密封。
图6是显示图5的半导体装置的制造过程的流程图。
如图6(A)所示，首先，准备由双极晶体管构成的发热量大的第一半导体芯片15。
如图6(B)所示，首先，和所述相同将双极晶体管构成的发热量大的第一半导体芯片15装片在支架20的第一垫板部20A上。
其次，如图6(C)所示，准备由MOS型晶体管构成的发热量小的第二半导体芯片17。
如图6(D)所示，将由MOSFET构成的发热量小的第二半导体芯片17也在引线架20的第二垫板部20B上装片。
如图6(E)所示，由金属细线26、26...引线接合第一半导体芯片15的各焊盘16、16...和外引线25A、25A...。与此同时，第二半导体芯片17的各焊盘18、18...和不同于所述的外引线25B、25B...也由金属细线30、30...引线接合。
如图6(F)所示，仅对引线接合的第一半导体芯片17的局部滴入高导热性树脂32进行罐封模制。
如图6(G)所示，由通常所用的非高导热性树脂31对由所述高导热性树脂32罐封模制的第一半导体芯片15和第二半导体芯片17一体地进行传递模模制。
传递模模制工序中，将在引线架20的第一垫板部20A上安装的、由高导热性树脂28树脂密封的第一半导体芯片15和引线架21的第二垫板部20B上安装的第二半导体芯片17设置到由上下模型形成的型腔内。然后，向型腔内注入非高导热性树脂31，树脂密封第一及第二半导体芯片15、17。
如图6(H)所示，在由非高导热性树脂31一体地传递模模制第一半导体芯片15和第二半导体芯片17后，镀敷由模制的非高导热性树脂31向外部突出的外引线25、25...部分。
如图6(I)所示，最后，通过在表面印刷机种名及编号等完成半导体装置。
在本发明的树脂密封型半导体装置中，由于安装第一半导体芯片和第二半导体芯片的垫板部导热低，且发热量大的第一半导体芯片由高导热性树脂密封，故自第一半导体芯片产生的热迅速向外部放热。从而，阻止由第一半导体芯片产生的热传递到第二垫板上安装的第二半导体芯片上。
由于发热量小的第二半导体芯片由非高导热性树脂模制，故虽然高导热性树脂与非高导热性树脂相比价格高，但是，由于仅由高导热性树脂树脂密封第一半导体芯片，故使用的量很小，整体的生产成本提高很小。
另外，高导热性树脂虽然变形应力大，但由于抗应力弱的MOS型晶体管构成的第二半导体芯片由导热系数低而低应力的树脂模制，故施加的应力小，可防止电路特性的变动或误动作。

Claims (5)

1、一种树脂密封型半导体装置，其特征在于，包括：引线架，其由第一垫板部和第二垫板部及对应各垫板部设置的外引线构成；发热量大的第一半导体芯片，其装在所述第一垫板部，并和与其外部电极引出用焊盘对应的所述外引线引线接合；比所述第一半导体芯片发热量小的第二半导体芯片，其装在所述第二垫板部，并和与其外部电极引出用焊盘对应的所述外引线引线接合，所述第一半导体芯片由高导热性树脂树脂密封，并将所述第二半导体芯片及由所述高导热性树脂树脂密封的所述第一半导体芯片由非高导热性树脂一体树脂密封。
2、如权利要求1所述的树脂密封型半导体装置，其特征在于，所述第一半导体芯片是功率用双极晶体管，所述第二半导体芯片是由MOS晶体管构成的集成电路。
3、如权利要求1所述的树脂密封型半导体装置，其特征在于，所述非高导热性树脂由低应力树脂构成。
4、一种树脂密封型半导体装置的制造方法，其特征在于，准备由第一垫板部和第二垫板部及对应各垫板部设置的外引线构成的引线架；将发热量大的第一半导体芯片装在所述第一垫板部，并和该第一半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；由高导热性树脂将所述第一半导体芯片传递模模制；将比所述第一半导体芯片发热量小的第二半导体芯片装在所述第二垫板部，并和该第二半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；将由所述高导热性树脂模制的所述第一半导体芯片和所述第二半导体芯片由非高导热性树脂一体模制。
5、一种树脂密封型半导体装置的制造方法，其特征在于，准备由第一垫板部和第二垫板部及对应各垫板部设置的外引线构成的引线架；将发热量大的第一半导体芯片装在所述第一垫板部，并和该第一半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；由高导热性树脂通过灌封模制所述第一半导体芯片；将比所述第一半导体芯片发热量小的第二半导体芯片装在所述第二垫板部，并和该第二半导体芯片的外部电极引出用焊盘对应的所述外引线引线接合；将由所述高导热性树脂模制的所述第一半导体芯片和所述第二半导体芯片由非高导热性树脂一体模制。
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