CN1516892A - 清洁气和蚀刻气 - Google Patents
清洁气和蚀刻气 Download PDFInfo
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- CN1516892A CN1516892A CNA038004178A CN03800417A CN1516892A CN 1516892 A CN1516892 A CN 1516892A CN A038004178 A CNA038004178 A CN A038004178A CN 03800417 A CN03800417 A CN 03800417A CN 1516892 A CN1516892 A CN 1516892A
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- Prior art keywords
- gas
- perfluoro
- cyclicether
- chamber
- cleaning
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004140 cleaning Methods 0.000 title claims abstract description 102
- 238000005530 etching Methods 0.000 title claims abstract description 62
- 239000007789 gas Substances 0.000 claims abstract description 209
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 150000004292 cyclic ethers Chemical class 0.000 claims description 11
- 239000011737 fluorine Substances 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 11
- 150000001721 carbon Chemical group 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- 229910052754 neon Inorganic materials 0.000 claims description 4
- 229910052704 radon Inorganic materials 0.000 claims description 4
- 229910052724 xenon Inorganic materials 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 230000003670 easy-to-clean Effects 0.000 claims 1
- 238000010792 warming Methods 0.000 abstract description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract description 10
- -1 perfluoro cyclic ether Chemical class 0.000 abstract description 4
- 231100000252 nontoxic Toxicity 0.000 abstract description 3
- 230000003000 nontoxic effect Effects 0.000 abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 10
- 239000002912 waste gas Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000003595 mist Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005381 potential energy Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000009835 boiling Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Treating Waste Gases (AREA)
Abstract
Description
实施例1 | 实施例2 | 实施例3 | 实施例4 | 实施例5 | |
清洁气组成 | |||||
c-C3F6O2含量(摩尔%) | 10 | 20 | 30 | 40 | 50 |
O2含量(摩尔%) | 90 | 80 | 70 | 60 | 50 |
醚如c-C3F6O2/O2 | 0.11 | 0.25 | 0.43 | 0.67 | 1.00 |
(c-C3F6O2+F6O2)与气体总量的比例(摩尔%) | 100 | 100 | 100 | 100 | 100 |
清洁速率(/min) | 5,280 | 8,340 | 10,500 | 11,4300 | 11,350 |
排出气体中CF4含量(%) | 0.013 | 0.038 | 0.085 | 0.169 | 0.320 |
醚如c-C3F6O2分解率(%) | 94.7 | 94.8 | 95.7 | 96.5 | 96.0 |
实施例6 | 实施例7 | 实施例8 | 实施例9 | 实施例10 | |
清洁气组成 | |||||
c-C3F6O2含量(摩尔%) | 10 | 20 | 30 | 40 | 50 |
O2含量(摩尔%) | 90 | 80 | 70 | 60 | 50 |
c-C3F6O2/O2 | 0.11 | 0.25 | 0.43 | 0.67 | 1.00 |
(c-C3F6O2+O2)与气体总量的比例(摩尔%) | 100 | 100 | 100 | 100 | 100 |
清洁速率(/min) | 4,560 | 7,620 | 9,190 | 9,930 | 9,120 |
排出气体中CF4含量(%) | 0.014 | 0.040 | 0.090 | 0.171 | 0.320 |
c-C3F6O2分解率(%) | 91.4 | 90.9 | 91.5 | 91.5 | 91.1 |
实施例11 | 实施例12 | 实施例13 | 实施例14 | |
清洁气组成 | ||||
c-C4F8O2含量(摩尔%) | 10 | 20 | 30 | 40 |
O2含量(摩尔%) | 90 | 80 | 70 | 60 |
c-C4F8O2/O2 | 0.11 | 0.25 | 0.43 | 0.67 |
(c-C4F8O2+O2)与气体总量的比例(摩尔%) | 100 | 100 | 100 | 100 |
清洁速率(/min) | 6,620 | 9,960 | 11,250 | 10,130 |
排出气体中CF4含量(%) | 0.031 | 0.104 | 0.220 | 0.430 |
c-C4F8O2分解率(%) | 100 | 99.8 | 99.9 | 100 |
实施例15 | 实施例16 | 实施例17 | 实施例18 | |
清洁气组成 | ||||
c-C4F8O2含量(摩尔%) | 10 | 20 | 30 | 40 |
O2含量(摩尔%) | 90 | 80 | 70 | 60 |
c-C4F8O2/F6 | 0.11 | 0.25 | 0.43 | 0.67 |
(c-C4F8O2+O2)与气体总量的比例(摩尔%) | 100 | 100 | 100 | 100 |
清洁速率(/min) | 5950 | 8780 | 9560 | 8820 |
排出气体中CF4含量(%) | 0.036 | 0.105 | 0.230 | 0.440 |
c-C4F8O2分解率(%) | 100 | 99.5 | 99.6 | 99.6 |
实施例19 | 实施例20 | 实施例21 | |
清洁气组成 | |||
c-C3F6O2含量(摩尔%) | 36 | 36 | 36 |
O2含量(摩尔%) | 54 | 54 | 54 |
c-C3F6O2/O2 | 0.66 | 0.66 | 0.66 |
c-C3F6O2/(c-C3F6+O2) | 0.40 | 0.40 | 0.40 |
加入的惰性气体含量(摩尔%) | 氩气:10 | 氮气:10 | 氦气:10 |
(c-C4F8O2+O2)与气体总量的比例(摩尔%) | 90 | 90 | 90 |
清洁速率(/min) | 4,560 | 7,620 | 9,190 |
排出气体中CF4含量(%) | 0.144 | 0.148 | 0.143 |
c-C3F6O2分解率(%) | 95.9 | 95.4 | 95.3 |
比较例1 | 比较例2 | 比较例3 | 比较例4 | 比较例5 | 比较例6 | 比较例7 | |
清洁气组成 | |||||||
C2F6含量(摩尔%) | 20 | 30 | 40 | 45 | 50 | 60 | 70 |
O2含量(摩尔%) | 80 | 70 | 60 | 55 | 50 | 40 | 30 |
C2F6/O2 | 0.25 | 0.43 | 0.67 | 0.82 | 1.00 | 1.50 | 2.33 |
(C2F6+O2)与气体总量比例(摩尔%) | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
清洁速率(/min) | 7.810 | 10.050 | 11,810 | 12.270 | 12.410 | 11.140 | 7.590 |
排出气体中CF4含量(%) | 0.061 | 0.129 | 0.230 | 0.276 | 0.360 | 0.626 | 0.970 |
C2F6分解率(%) | 65.8 | 65.0 | 64.1 | 62.6 | 63.2 | 62.3 | 61.0 |
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP034460/2002 | 2002-02-12 | ||
JP2002034460A JP2003234299A (ja) | 2002-02-12 | 2002-02-12 | クリーニングガス及びエッチングガス |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1516892A true CN1516892A (zh) | 2004-07-28 |
CN1265435C CN1265435C (zh) | 2006-07-19 |
Family
ID=27678028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038004178A Expired - Lifetime CN1265435C (zh) | 2002-02-12 | 2003-01-28 | 清洁气 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7138364B2 (zh) |
EP (1) | EP1475822B1 (zh) |
JP (1) | JP2003234299A (zh) |
KR (1) | KR100562514B1 (zh) |
CN (1) | CN1265435C (zh) |
DE (1) | DE60325557D1 (zh) |
TW (1) | TWI228536B (zh) |
WO (1) | WO2003069659A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102639748A (zh) * | 2009-12-01 | 2012-08-15 | 中央硝子株式会社 | 清洁气体 |
CN111518561A (zh) * | 2019-02-01 | 2020-08-11 | 才将科技股份有限公司 | 一种硅蚀刻剂及其应用 |
CN112981369A (zh) * | 2013-12-30 | 2021-06-18 | 科慕埃弗西有限公司 | 室清洁和半导体蚀刻气体 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005117082A1 (ja) * | 2004-05-31 | 2005-12-08 | National Institute Of Advanced Industrial Science And Technology | ドライエッチングガスおよびドライエッチング方法 |
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CA2071201A1 (en) | 1989-12-11 | 1991-06-12 | Ronald J. Mckinney | Partially fluorinated compounds and polymers |
IT1249208B (it) | 1990-06-07 | 1995-02-20 | Ausimont Srl | Processo per la preparazione di 1,3-diossolani alogenati e nuovi prodotti ottenuti |
JPH082892B2 (ja) | 1991-04-16 | 1996-01-17 | 信越化学工業株式会社 | パーフルオロ環状エーテル及びその製造法 |
JP2904723B2 (ja) | 1995-04-21 | 1999-06-14 | セントラル硝子株式会社 | クリーニングガス |
JP3186031B2 (ja) * | 1995-04-21 | 2001-07-11 | セントラル硝子株式会社 | エッチングガス |
US5861065A (en) * | 1997-01-21 | 1999-01-19 | Air Products And Chemicals, Inc. | Nitrogen trifluoride-oxygen thermal cleaning process |
US6872322B1 (en) * | 1997-11-12 | 2005-03-29 | Applied Materials, Inc. | Multiple stage process for cleaning process chambers |
US6537461B1 (en) * | 2000-04-24 | 2003-03-25 | Hitachi, Ltd. | Process for treating solid surface and substrate surface |
JP4492764B2 (ja) * | 1999-05-24 | 2010-06-30 | 日本ゼオン株式会社 | プラズマ反応用ガス及びその製造方法 |
WO2002007194A2 (en) * | 2000-07-18 | 2002-01-24 | Showa Denko K.K. | Cleaning gas for semiconductor production equipment |
JP2002280376A (ja) * | 2001-03-22 | 2002-09-27 | Research Institute Of Innovative Technology For The Earth | Cvd装置のクリーニング方法およびそのためのクリーニング装置 |
-
2002
- 2002-02-12 JP JP2002034460A patent/JP2003234299A/ja active Pending
-
2003
- 2003-01-28 KR KR1020037015440A patent/KR100562514B1/ko active IP Right Grant
- 2003-01-28 CN CNB038004178A patent/CN1265435C/zh not_active Expired - Lifetime
- 2003-01-28 DE DE60325557T patent/DE60325557D1/de not_active Expired - Lifetime
- 2003-01-28 EP EP03701903A patent/EP1475822B1/en not_active Expired - Lifetime
- 2003-01-28 US US10/480,285 patent/US7138364B2/en not_active Expired - Lifetime
- 2003-01-28 WO PCT/JP2003/000804 patent/WO2003069659A1/ja active Application Filing
- 2003-02-11 TW TW092102718A patent/TWI228536B/zh not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102639748A (zh) * | 2009-12-01 | 2012-08-15 | 中央硝子株式会社 | 清洁气体 |
CN112981369A (zh) * | 2013-12-30 | 2021-06-18 | 科慕埃弗西有限公司 | 室清洁和半导体蚀刻气体 |
CN112981369B (zh) * | 2013-12-30 | 2023-11-10 | 科慕埃弗西有限公司 | 室清洁和半导体蚀刻气体 |
CN111518561A (zh) * | 2019-02-01 | 2020-08-11 | 才将科技股份有限公司 | 一种硅蚀刻剂及其应用 |
CN111518561B (zh) * | 2019-02-01 | 2021-09-28 | 才将科技股份有限公司 | 一种硅蚀刻剂及其应用 |
Also Published As
Publication number | Publication date |
---|---|
EP1475822A4 (en) | 2007-04-25 |
US7138364B2 (en) | 2006-11-21 |
WO2003069659A1 (fr) | 2003-08-21 |
US20040173569A1 (en) | 2004-09-09 |
TW200303351A (en) | 2003-09-01 |
DE60325557D1 (de) | 2009-02-12 |
KR100562514B1 (ko) | 2006-03-22 |
TWI228536B (en) | 2005-03-01 |
KR20040004658A (ko) | 2004-01-13 |
JP2003234299A (ja) | 2003-08-22 |
EP1475822B1 (en) | 2008-12-31 |
CN1265435C (zh) | 2006-07-19 |
EP1475822A1 (en) | 2004-11-10 |
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