DE60325557D1 - Reinigungsgas und ätzgas - Google Patents

Reinigungsgas und ätzgas

Info

Publication number
DE60325557D1
DE60325557D1 DE60325557T DE60325557T DE60325557D1 DE 60325557 D1 DE60325557 D1 DE 60325557D1 DE 60325557 T DE60325557 T DE 60325557T DE 60325557 T DE60325557 T DE 60325557T DE 60325557 D1 DE60325557 D1 DE 60325557D1
Authority
DE
Germany
Prior art keywords
aging
cleaning gas
cleaning
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60325557T
Other languages
English (en)
Inventor
Y Ohira
Y Mitsui
T Yonemura
A Tsukuba Sekiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Canon Anelva Corp
Kanto Denka Kogyo Co Ltd
Panasonic Corp
Hitachi Kokusai Electric Inc
National Institute of Advanced Industrial Science and Technology AIST
Sanyo Electric Co Ltd
Sony Corp
Fujitsu Semiconductor Ltd
Renesas Electronics Corp
Ulvac Inc
AGC Inc
Original Assignee
Daikin Industries Ltd
Renesas Technology Corp
Asahi Glass Co Ltd
Canon Anelva Corp
Kanto Denka Kogyo Co Ltd
Panasonic Corp
Hitachi Kokusai Electric Inc
National Institute of Advanced Industrial Science and Technology AIST
Sanyo Electric Co Ltd
Sony Corp
Fujitsu Semiconductor Ltd
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd, Renesas Technology Corp, Asahi Glass Co Ltd, Canon Anelva Corp, Kanto Denka Kogyo Co Ltd, Panasonic Corp, Hitachi Kokusai Electric Inc, National Institute of Advanced Industrial Science and Technology AIST, Sanyo Electric Co Ltd, Sony Corp, Fujitsu Semiconductor Ltd, Ulvac Inc filed Critical Daikin Industries Ltd
Application granted granted Critical
Publication of DE60325557D1 publication Critical patent/DE60325557D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Treating Waste Gases (AREA)
DE60325557T 2002-02-12 2003-01-28 Reinigungsgas und ätzgas Expired - Lifetime DE60325557D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002034460A JP2003234299A (ja) 2002-02-12 2002-02-12 クリーニングガス及びエッチングガス
PCT/JP2003/000804 WO2003069659A1 (fr) 2002-02-12 2003-01-28 Gaz de nettoyage et gaz de gravure

Publications (1)

Publication Number Publication Date
DE60325557D1 true DE60325557D1 (de) 2009-02-12

Family

ID=27678028

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60325557T Expired - Lifetime DE60325557D1 (de) 2002-02-12 2003-01-28 Reinigungsgas und ätzgas

Country Status (8)

Country Link
US (1) US7138364B2 (de)
EP (1) EP1475822B1 (de)
JP (1) JP2003234299A (de)
KR (1) KR100562514B1 (de)
CN (1) CN1265435C (de)
DE (1) DE60325557D1 (de)
TW (1) TWI228536B (de)
WO (1) WO2003069659A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760769A4 (de) * 2004-05-31 2009-05-13 Nat Inst Of Advanced Ind Scien Trockenätzgase und verfahren zum trockenätzen
JP5691163B2 (ja) * 2009-12-01 2015-04-01 セントラル硝子株式会社 クリーニングガス
KR102400322B1 (ko) * 2013-12-30 2022-05-20 더 케무어스 컴퍼니 에프씨, 엘엘씨 챔버 세정 및 반도체 식각 기체
TWI686461B (zh) * 2019-02-01 2020-03-01 才將科技股份有限公司 一種具有高矽／二氧化矽蝕刻的選擇比的矽蝕刻劑及其應用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281119A (en) * 1973-07-16 1981-07-28 Massachusetts Institute Of Technology Cryogenically controlled direct fluorination process, apparatus and products resulting therefrom
JPS6077429A (ja) * 1983-10-04 1985-05-02 Asahi Glass Co Ltd ドライエツチング方法
US4908461A (en) 1987-12-21 1990-03-13 E. I. Du Pont De Nemours And Company Process for dechlorinating 4,5-dichlorofluorodioxolanes to obtain fluorodioxoles
EP0504322B1 (de) 1989-12-11 1996-02-14 E.I. Du Pont De Nemours And Company Teilweise fluorierte verbindungen und polymere
IT1249208B (it) 1990-06-07 1995-02-20 Ausimont Srl Processo per la preparazione di 1,3-diossolani alogenati e nuovi prodotti ottenuti
JPH082892B2 (ja) 1991-04-16 1996-01-17 信越化学工業株式会社 パーフルオロ環状エーテル及びその製造法
JP2904723B2 (ja) 1995-04-21 1999-06-14 セントラル硝子株式会社 クリーニングガス
JP3186031B2 (ja) * 1995-04-21 2001-07-11 セントラル硝子株式会社 エッチングガス
US5861065A (en) * 1997-01-21 1999-01-19 Air Products And Chemicals, Inc. Nitrogen trifluoride-oxygen thermal cleaning process
US6872322B1 (en) * 1997-11-12 2005-03-29 Applied Materials, Inc. Multiple stage process for cleaning process chambers
US6537461B1 (en) * 2000-04-24 2003-03-25 Hitachi, Ltd. Process for treating solid surface and substrate surface
JP4492764B2 (ja) * 1999-05-24 2010-06-30 日本ゼオン株式会社 プラズマ反応用ガス及びその製造方法
AU2001271063A1 (en) * 2000-07-18 2002-01-30 Showa Denko K K Cleaning gas for semiconductor production equipment
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置

Also Published As

Publication number Publication date
KR100562514B1 (ko) 2006-03-22
US7138364B2 (en) 2006-11-21
TW200303351A (en) 2003-09-01
CN1265435C (zh) 2006-07-19
US20040173569A1 (en) 2004-09-09
EP1475822A1 (de) 2004-11-10
EP1475822B1 (de) 2008-12-31
CN1516892A (zh) 2004-07-28
JP2003234299A (ja) 2003-08-22
WO2003069659A1 (fr) 2003-08-21
EP1475822A4 (de) 2007-04-25
KR20040004658A (ko) 2004-01-13
TWI228536B (en) 2005-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ASAHI GLASS CO., LTD., TOKIO/TOKYO, JP

Owner name: CANON ANELVA CORP., KAWASAKI, KANAGAWA, JP

Owner name: DAIKIN INDUSTRIES, LTD., OSAKA, JP

Owner name: FUJITSU MICROELECTRONICS LIMITED, TOKIO, JP

Owner name: HITACHI KOKUSAI ELECTRIC INC., TOKIO/TOKYO, JP

Owner name: KANTO DENKA KOGYO CO., LTD., TOKIO/TOKYO, JP

Owner name: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIE, JP

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

Owner name: RENESAS ELECTRONICS CORP., KAWASAKI-SHI, KANAG, JP

Owner name: SANYO ELECTRIC CO., LTD., MORIGUCHI, OSAKA, JP

Owner name: SONY CORP., TOKIO/TOKYO, JP

Owner name: ULVAC, INC., CHIGASAKI-SHI, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: KUDLEK & GRUNERT PATENTANWAELTE PARTNERSCHAFT, 803