CN1497712A - 电路装置及其制造方法 - Google Patents
电路装置及其制造方法 Download PDFInfo
- Publication number
- CN1497712A CN1497712A CNA031603335A CN03160333A CN1497712A CN 1497712 A CN1497712 A CN 1497712A CN A031603335 A CNA031603335 A CN A031603335A CN 03160333 A CN03160333 A CN 03160333A CN 1497712 A CN1497712 A CN 1497712A
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- China
- Prior art keywords
- circuit arrangement
- insulating resin
- conductive pattern
- circuit
- manufacture method
- Prior art date
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Abstract
一种电路装置及其制造方法,制造具有任意外形形状的电路装置(10)。该制造方法包括下述工序:将构成同种或异种电路装置(10)的导电图案(11)形成于导电箔(30)上;将电路元件(12)固定在导电图案(11)上;用绝缘树脂(13)进行模装,覆盖电路元件(12);用激光切除基于电路装置(10)外周部的任意形状的部位的绝缘树脂(13),分离出各电路装置(10)。因此,可制造任意形状的电路装置(10),可提供与装置的箱体形状对应的电路装置。
Description
技术领域
本发明涉及具有任意外周部形状的薄型电路装置及其制造方法。
背景技术
目前,设置在电子设备上的电路装置由于要用于移动电话、手提电脑等上,故要求小型化、薄型化和轻量化。例如作为电路装置以半导体装置为例说明如下,通常的半导体装置目前有用通常的传递模密封的封装型半导体装置。如图31所示,该半导体装置被安装在印刷电路板PS上(例如参照专利文献1)。
该封装型半导体装置61用树脂层63覆盖半导体芯片62的周围,自该树脂层63的侧部导出外部连接用引线端子64。但是,该封装型半导体装置61其引线端子64自树脂层63露出外部,整体尺寸大,不能满足小型化、薄型化及轻量化。因此,各公司为了实现小型化、薄型化及轻量化,竞相开发各种结构,最近开发了被称作CSP(芯片尺寸封装)的与芯片尺寸同等的晶片级CSP或稍大于芯片尺寸的大小的CSP。
图32是支承衬底采用玻璃环氧树脂衬底65的稍大于芯片尺寸的CSP66。这里,就晶体管芯片T安装在玻璃环氧树脂衬底65上的情况进行说明。
在该玻璃环氧树脂衬底65的表面上形成有第一电极67、第二电极68及小片焊盘69,背面形成有第一背面电极70和第二背面电极71。通过通孔TH所述第一电极67和第一背面电极70电连接,第二电极68和第二背面电极71电连接。小片焊盘69上固定有所述裸的晶体管芯片T,晶体管的发射极电极和第一电极67通过金属配线72连结,晶体管的基极和第二电极68通过金属配线72连结。另外,玻璃环氧树脂衬底65上设有树脂层73,覆盖晶体管芯片T。
所述CSP66虽然采用玻璃环氧树脂衬底65,但是与晶片级CSP不同,自芯片T至外部连接用背面电极70、71的延伸结构简单,具有可廉价制造的优点。如图3 1所示,所述CSP66安装在印刷电路板PS上。印刷电路板PS设有构成电气电路的电极和配线,电连接并固定所述CSP66、所述封装型半导体装置61、片状电阻CR或片状电容器CC等。由该印刷电路板构成的电路安装在各种装置中。
专利文献1为特开2001-339151号公报(第一页,图1)。
发明内容
但是,上述电路装置及安装该电路装置的印刷电路板存在以下问题。
第一,CSP66以玻璃环氧树脂衬底65作为支承衬底而形成整体,由于玻璃环氧树脂衬底65自身是厚的材料,故CSP66的薄型化受到限制。
第二,由于印刷电路板PS具有机械支承安装的CSP66等的作用,故为了保持机械强度,要形成得较厚。因此,这一点会阻碍内装印刷电路板PS的移动电话等装置的小型化。
第三,上述CSP66通过切割而一个个分离,故其平面形状形成矩形。因此,当将CSP66直接固定在具有矩形以外的形状的装置的箱体内部时,难于有效地利用箱体内部的空间。
第四,在以和CSP66同样的结构实现树脂密封多个无源元件及有源元件等电路元件类型的电路装置时,由于单个电路元件的尺寸不同,故需要大量进行密封的树脂。
本发明就是鉴于上述问题而开发的,本发明的主要目的是提供一种可通过将外形形成任意形状来直接安装在装置的箱体内部等的电路装置及其制造方法。
本发明第一方面提供一种电路装置,其特征在于,包括电路元件、固定所述电路元件并形成配线的导电图案和密封所述电路元件及所述导电图案的绝缘树脂,所述绝缘树脂的侧面部由激光切割。
本发明第二方面由所述绝缘树脂构成的外周部的一部分呈曲线。
本发明第三方面由所述绝缘树脂构成的外周部的角部形成锐角或钝角。
本发明第四方面提供一种电路装置的制造方法,其特征在于,包括下述工序:将构成同种或异种电路装置的导电图案形成于导电箔上;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件;用激光切除基于各电路装置外周部的任意形状的部位的所述绝缘树脂,分离出所述各电路装置。
本发明第五方面提供一种电路装置的制造方法,其特征在于,包括下述工序:在除去成为构成同种或异种电路装置的导电图案的部位后的区域的导电箔上,形成比所述导电箔的厚度浅的分离槽;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件,并充填所述分离槽;除去所述导电箔的背面直至露出所述绝缘树脂;用激光切除基于各电路装置外周部的任意形状的部位的所述绝缘树脂,分离出所述各电路装置。
本发明第六方面用所述激光仅除去所述绝缘树脂。
本发明第七方面用二氧化碳气激光除去所述绝缘树脂。
本发明第八方面所述导电图案构成小片焊盘、焊盘及配线。
本发明第九方面由所述绝缘树脂构成的外周部的一部分形成曲线状。
本发明第十方面由所述绝缘树脂构成的外周部的角部形成锐角或钝角。
本发明第十一方面提供一种电路装置的制造方法,其特征在于,包括下述工序:将构成至少一个电路装置的导电图案区域性形成于导电箔上;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件;在所述绝缘树脂上形成通孔;分离为单个电路装置。
本发明第十二方面提供一种电路装置的制造方法,其特征在于,包括下述工序:在除去成为构成至少一个电路装置的导电图案的部位后的导电箔区域上,形成比所述导电箔的厚度浅的分离槽;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件,并充填所述分离槽;在所述绝缘树脂上形成通孔,局部露出所述分离槽;除去形成所述分离槽的部位的剩余的所述导电箔的厚度部分,使充填于所述分离槽中的所述绝缘树脂和所述通孔露出;分离为单个电路装置。
本发明第十三方面用激光形成所述通孔。
本发明第十四方面通过用所述分离槽的表面反射所述激光,垂直形成所述通孔的侧面。
本发明第十五方面提供一种电路装置的制造方法,其背面形成由焊剂构成的多个外部电极,其特征在于,通过向所述电路装置的面方向照射激光,使所述外部电极的高度均一。
附图说明
图1是说明本发明电路装置的(A)平面图,(B)剖面图,(C)剖面图;
图2是说明本发明电路装置制造方法的剖面图;
图3是说明本发明电路装置制造方法的剖面图;
图4是说明本发明电路装置制造方法的(A)剖面图,(B)平面图;
图5是说明本发明电路装置制造方法的(A)剖面图,(B)平面图;
图6是说明本发明电路装置制造方法的(A)剖面图,(B)平面图;
图7是说明本发明电路装置制造方法的剖面图;
图8是说明本发明电路装置制造方法的剖面图;
图9是说明本发明电路装置制造方法的剖面图;
图10是说明本发明电路装置制造方法的(A)剖面图,(B)平面图;
图11是说明本发明电路装置制造方法的(A)平面图,(B)剖面图,(C)剖面图;
图12是说明本发明电路装置制造方法的剖面图;
图13是说明本发明电路装置制造方法的剖面图;
图14是说明本发明电路装置制造方法的剖面图;
图15是说明本发明电路装置制造方法的剖面图;
图16是说明本发明电路装置制造方法的剖面图;
图17是说明本发明电路装置制造方法的剖面图;
图18是说明本发明电路装置制造方法的剖面图;
图19是说明本发明电路装置制造方法的剖面图;
图20是说明本发明电路装置制造方法的剖面图;
图21是说明本发明电路装置的(A)平面图,(B)剖面图,(C)剖面图;
图22是说明本发明电路装置制造方法的剖面图;
图23是说明本发明电路装置制造方法的剖面图;
图24是说明本发明电路装置制造方法的剖面图;
图25是说明本发明电路装置制造方法的剖面图;
图26是说明本发明电路装置制造方法的剖面图;
图27是说明本发明电路装置的(A)平面图,(B)剖面图,(C)剖面图;
图28是说明本发明电路装置制造方法的剖面图;
图29是说明本发明电路装置制造方法的剖面图;
图30是说明本发明电路装置制造方法的剖面图;
图31是说明现有电路装置的剖面图;
图32是说明现有电路装置的剖面图。
具体实施方式
(说明电路装置10的结构的实施例1)
参照图1说明本发明的电路装置10的结构等。图1(A)是电路装置10的平面图,图1(B)是图1(A)的X-X’线的剖面图,图1(C)是图1(A)的Y-Y’线的剖面图。
参照图1(A)及图1(B),电路装置10具有下述结构。也就是说,主要包括:电路元件半导体元件12A及片状部件12B,安装有半导体元件12A及片状部件12B的导电图案11,和绝缘树脂13,该绝缘树脂13使导电图案11的背面自下面露出来覆盖电路元件12及导电图案11。绝缘树脂13的自背面露出的绝缘树脂13由保护层17覆盖,在自保护层17的开口部露出的导电图案11的背面形成有由焊剂等构成的外部电极9。下面说明上述各构成元件。
导电图案11由铜箔等金属构成,露出背面埋入绝缘树脂13中。这里,导电图案11形成安装半导体元件12A及片状部件12B的小片焊盘和配线部,并形成焊接金属配线14的焊盘。自绝缘树脂13的背面露出的导电图案11的背面由树脂构成的保护层17保护。在导电图案11的背面所希望的部位形成有与外部进行电气输入输出的外部电极9。单个的导电图案11相互间由绝缘树脂13形成的分离槽16电分离。除去电路装置10的外周部附近,形成导电图案11。
在同图(A)中,在导电图案11上安装有数个半导体元件12A或片状部件12B,数个导电图案11与半导体元件12A连接,但是,实际上也可以紧密地形成更多个导电图案11。并且,在同图(B)中,虽然图示了单层导电图案11,但也可以形成通过绝缘层层积的多层导电图案11。
绝缘树脂13使导电图案11的背面露出而将整体密封。这里,绝缘树脂13密封电路元件、金属配线14及导电图案11。作为绝缘树脂13的材料可以采用由传递模形成的热硬性树脂或由注射模形成的热塑性树脂。由该图可知,绝缘树脂13平面形成装置整体的外周部。而且,装置整体的外周部局部形成曲线状,且角部有形成钝角或锐角的部分。本发明中,绝缘树脂13的切除由激光进行,故可使绝缘树脂13构成的角部形成直角以外的角度或曲线状。形成绝缘树脂13的方法除上述方法外,也可由罐封等形成绝缘树脂13。
半导体元件12A及片状部件12B是安装在导电图案11上的电路元件。这里,半导体元件12A通过倒装(倒装接合法)或面朝上接合法安装,在用面朝上接合法安装时,半导体元件12A的电极和导电图案11由金属配线14电连接。电路元件12除IC芯片等之外,还可采用晶体管芯片、二极管等有源元件或片状电阻、片状电容器等无源元件。另外,也可将多个上述有源元件及无源元件配置在导电图案11上。在用倒装法安装半导体元件时,通过形成于半导体元件上的补片电连接。
参照图1(A)及图1(C)说明通孔15。通孔15通过局部除去绝缘树脂13而形成,从电路装置10的表面贯通至背面。通孔15可由激光形成,其平面断面形成圆形。这一点在说明电路装置的制造方法后的说明中会详细说明。通过在除去了导电图案11的区域形成通孔15,可容易地由激光形成通孔15。这里,通孔15形成于电路装置10的周边部。该通孔15作为螺钉孔等使用,通过进行螺钉固定,将电路装置10固定在装置的箱体内部。嵌合于通孔15的尺寸的突起部设在装置箱体内部,通过使突起部和通孔15嵌合,可将电路装置10固定在箱体内部。
(说明电路装置10的制造方法的实施例2)
在本实施例中,电路装置10由下述工序制造。这些工序包括:将构成同种或异种电路装置10的导电图案11形成于导电箔30上;将电路元件12固定在导电图案11上;用绝缘树脂13进行模装,覆盖电路元件12;用激光切除基于各电路装置10外周部的任意形状的部位的所述绝缘树脂13,分离出各电路装置10。电路装置10由上述工序制造。下面参照图2~图10说明本发明的各工序。
第一工序:参照图2~图4
本工序是将构成同种或异种电路装置10的导电图案11形成于导电箔30上的工序。该导电图案可通过在例如导电箔30上形成浅于其厚度的分离槽32而形成。
在本工序中,首先,如图2所示,准备片状的导电箔30。该导电箔30根据焊剂的附着性、焊接性、镀敷性选择材料,采用以铜为主材料的导电箔、以铝为主材料的的导电箔或由铁镍等合金构成的导电箔等。
导电箔30的厚度考虑到后述的蚀刻最好为10μm~300μm左右,即使是300μm以上或10μm以下,基本上也可以。如后所述,只要可形成浅于导电箔30的厚度的分离槽32即可。
另外,片状的导电箔30可以以规定宽度例如45mm卷成筒状来准备,将其搬运到后述的各工序,也可以准备切成规定大小的矩形状导电箔30,搬运到后述的各工序。然后,形成导电图案。
首先,如图3所示,在导电箔30之上,将光致抗蚀剂PR制图,使除去形成导电图案11的区域之外的导电箔30露出。
然后,参照图4(A),通过选择性蚀刻导电箔30形成具有规定深度的分离槽16。利用形成的分离槽16使导电图案11相互间分离。
下面,参照图4(B)说明具体化的导电图案11。这里,导电图案11形成有作为小片焊盘、配线及焊盘的部分。在该图中,用虚线31表示制造的电路装置外周部的部位。在其后的工序中,用激光按虚线31所示的形状分离电路装置10,故在虚线31部位的区域未形成导电图案11。也就是说,在虚线31所示的区域形成分离槽16。在该图中,图示了数十个导电图案11,但是实际上也可形成更多个导电图案11。
第二工序:参照图5
本工序是将电路元件12固定在导电图案11上并电连接的工序。
参照图5,通过焊剂将电路元件12安装在导电图案11上。这里,焊剂使用焊锡或Ag膏等导电性膏剂。然后,进行半导体元件12A的电极和所希望的导电图案11的引线接合。具体地说,利用热压装进行的球形接合及超声波进行的楔形接合对安装在导电图案11上的电路元件12的电极和所希望的导电图案11一并进行引线接合。
在此,作为电路元件12是将一个IC芯片固定在导电图案11A上,但是作为电路元件12也可采用IC芯片以外的元件。具体地说,电路元件12除IC芯片等之外,还可采用晶体管芯片、二极管等有源元件或片状电阻、片状电容器等无源元件。另外,也可将多个所述有源元件及无源元件配置在导电图案11上。
第三工序:参照图6
本工序是用绝缘树脂13进行模装,以覆盖电路元件12并充填分离槽16。
在本工序中,如图6(A)所示,绝缘树脂13完全覆盖电路元件12及多个导电图案11,并在分离槽16中填充绝缘树脂13,与分离槽32嵌合并牢固结合。利用绝缘树脂13支承导电图案11。另外,在本工序中,可利用传递模、注射模或罐封实现。作为树脂材料环氧树脂等热硬性树脂可由传递模实现,聚酰亚胺树脂、聚亚苯基硫醚等热塑性树脂可由注射模实现。
本工序的特征在于,在覆盖绝缘树脂13之前,形成导电图案11的导电箔30成为支承衬底。分离槽16形成得浅于导电箔的厚度,故导电箔30未被作为导电图案11一个个分离。因此,作为片状的导电箔30可一体处理,在模装绝缘树脂13时,向模型的搬运、向模型的安装非常容易,这是其特征。
参照图6(B),在本工序中,自一体形成的绝缘树脂13形成六个同种的电路装置10。在此,制造的电路装置10的个数可根据电路装置10的大小变化。也可以形成多个外形及内部构成的电气电路不同的异种电路装置10。
第四工序:参照图7
本工序是通过局部除去绝缘树脂13形成通孔15的工序。
本工序中,削去绝缘树脂13的一部分形成通孔15。具体地说,通过用激光除去绝缘树脂13的一部分而形成通孔20,使导电箔30的表面露出。这里,通孔15形成于分离槽的上方,分离槽16的表面自通孔15露出。这里使用的激光是二氧化碳气激光。
在该图中,为除去绝缘树脂13照射的激光由向下的箭头表示。当用激光慢慢切除绝缘树脂30并且激光照射到达分离槽16的表面时,由分离槽16的表面反射激光。且反射的激光也具有切除绝缘树脂13的作用,故通孔15的侧面垂直形成。在该图中,分离槽16的表面反射的激光分量由向上的箭头表示。这样,通过由导电箔30的表面反射激光垂直形成通孔15的侧面,可提高作为螺钉孔等使用的通孔15的功能。另外,激光的强度形成为可切除绝缘树脂13而不切除导电图案11的程度。且激光形成的通孔20的平面形状为圆形。
形成分离槽16的部位的导电箔30在由背面除去导电箔30的工序除去。因此,通孔15作为自电路装置10的表面至背面贯通的孔形成。
在上述说明中,通孔15形成于形成分离槽16的部位的上方,也可以将通孔15设置在未形成分离槽16的部位。这种情况下,必须调节激光的强度,以除去导电箔30。
第六工序:参照图8
本工序是除去导电箔30的背面直至露出绝缘树脂30的工序。
参照图8,本工序是化学及/或物理地除去导电箔30的背面,作为导电图案11分离的工序。该工序由研磨、研削、蚀刻、激光的金属蒸发等实施。在实验中,对导电箔30进行整面湿式蚀刻,自分离槽16使绝缘树脂13露出。其结果,使导电图案11相互间分离,形成导电图案11的背面露出于绝缘树脂13的结构。也就是说,形成充填于分离槽16的绝缘树脂13的表面和导电图案11的表面实质上一致的结构。
然后进行绝缘树脂13的背面处理。具体地说,为了保护自背面露出的导电图案11,形成保护层17。然后在所希望的部位形成焊剂等构成的外部电极9。
在本工序中,除去形成分离槽16的部位的导电箔30的剩余厚度部分。因此,通孔15下方的导电箔30也被除去,故通孔15形成自电路装置10的表面至背面连续的孔。
第七工序,参照图9
本工序是通过局部除去外部电极9使外部电极9的高度一致的工序。
参照图9,说明使用激光使外部电极9的高度一致的工序。利用网印等形成的单个的外部电极9的高度存在一定程度的误差。因此,在本工序中,对电路装置10的面方向平行地照射激光,局部除去外部电极9,使外部电极9的高度均一。由于激光的行进方向为直线。故较低的外部电极9前端部被除去少许,而较大的外部电极9其前端部被大量除去。
这样,通过使外部电极9的高度形成均一,可可靠地进行由外部电极9进行的电连接。
第八工序:参照图10
本工序是使用激光切除基于各电路装置10外周部的任意形状的部位的绝缘树脂13,从而分离出各电路装置10的工序。
参照图10(A),在本工序中,用激光除去厚度方向仅由绝缘树脂13形成的部位的绝缘树脂13。也就是说,激光除去的仅是绝缘树脂13,导电箔30的分离不在此进行。因此,可减少用激光除去引起的发热。因此,即使在将电路元件配置在电路装置10外周部附近的情况下,本工序的发热也很少,故可防止热量对电路元件的损伤。
在此,作为分离绝缘树脂13的激光可采用激态复合物激光或二氧化碳气激光。例如,可使用二氧化碳气激光进行绝缘树脂13的分离,并通过用激态复合物激光除去此时形成的碳化物进行电路装置10的分离。
参照图10(B),用激光除去基于各电路装置外形形状的部位的绝缘树脂13。下面说明这样用激光分离电路装置10的优点。激光进行的绝缘树脂13的分离可通过变更控制激光的扫描程序软件来几乎自由地变更其分离形状。因此,可制造弯曲的形状等任意形状的电路装置10。另外,根据上述说明,在本工序中用激光仅除去绝缘树脂13,但是也可通过调节激光的强度将导电箔30也一并除去。
通过上述工序,可制造例如图1所示的电路装置10。
(说明另一形态的电路装置的实施例3)
参照图11~图20说明另一形态的电路装置10的结构及其制造方法。
参照图11,另一形态的电路装置10主要包括:电路元件半导体元件12A及片状部件12B,安装半导体元件12A及片状部件12B的导电图案11,自下面露出导电图案11的背面而覆盖电路元件12及导电图案11的绝缘树脂13。并且,导电图案11在半导体元件12A的下方还形成配线部。自绝缘树脂13的背面露出的绝缘树脂13由保护层17覆盖,自保护层17的开口部露出的导电图案11的背面上形成有由焊剂等构成的外部电极9。
本实施例的电路装置10和实施例1说明的电路装置10在导电图案10的结构上不同。也就是说,在本实施例的电路装置10中,导电图案在半导体元件12A的下方也形成配线部。因此,通过将半导体元件12A的下方作为配线部使用可提高装置整体的安装密度,故可缩小电路装置。
下面说明本实施例的电路装置10的制造方法。本实施例的电路装置10可用两种方法制造。第一方法是自两张导电膜介由绝缘层层积的绝缘板形成导电图案的方法,第二方法是通过与实施例2同样地形成分离槽形成导电图案的方法。下面说明所述形成导电图案的两种方法。形成导电图案的工序以外的工序与上述实施例2同样。也就是说形成通孔的工序、加工外部电极的工序、用激光分离各电路装置的工序与实施例2同样。
参照图12~图16,说明包括上述第一方法即自绝缘板43形成导电图案11的方法的电路装置的制造方法。
首先,参照图12,准备绝缘板43。该板是介由绝缘层18层积了第一导电膜41及第二绝缘膜42的板。第一绝缘膜41形成导电图案11,为了形成微细图案,形成得很薄。与此相对,第二导电膜42具有在进行模装之前支承整体的作用,故要求高的强度,形成得比第一导电膜41厚。
参照图13,形成导电图案11,用绝缘层覆盖导电图案11。具体地说,首先通过选择性蚀刻第一导电膜41形成导电图案11。然后用绝缘层18覆盖导电图案11。然后,通过局部除去绝缘层18,使形成焊盘的部位的导电图案11露出。该部分的绝缘层18的除去可使用激光进行。然后,在露出的导电图案11的表面上形成镀膜19。
参照图14,进行半导体元件12A的固定和电连接,并由绝缘树脂13进行覆盖。具体地说,用绝缘性粘接剂等将半导体元件12A固定在绝缘层18上。然后,用金属配线14将半导体元件12A的电极和导电图案11的露出部分电连接。再由绝缘树脂13密封半导体元件12A、金属配线14。该密封可通过传递模、注射模或罐封等进行。
参照图15,除去第二导电膜42。具体地说,通过自背面进行蚀刻,整面除去第二导电膜42。由此使绝缘层18在背面露出。
参照图16,在背面形成外部电极9。具体地说,首先,通过局部除去绝缘树脂18,在绝缘层18上形成用于形成外部电极9的开口部。将焊锡等焊剂涂敷在设于绝缘层18的开口部形成外部电极9。
下面说明形成导电图案11的第二方法。该方法中,与实施例2同样地自一张导电箔45形成导电图案11。
参照图17,在准备好导电箔45后形成分离槽46,形成导电图案11。分离槽46的形成通过选择性地进行蚀刻来进行。
参照图18,介由绝缘性粘接剂将半导体元件12A固定在导电图案11上部。这里,绝缘性粘接剂也充填在位于半导体元件12A下方的分离槽中。然后,用金属配线电连接半导体元件12A的电极和所希望的导电图案。
参照图19,用绝缘树脂13密封半导体元件12A和金属配线。在该工序中,分离槽46也填充绝缘树脂13。
参照图20,通过自背面蚀刻导电箔45,自背面使填充在分离槽中的绝缘树脂13露出。这样,一个个导电图案11被电分离。背面露出的导电图案11由保护层17保护,在所希望的部位形成外部电极9。
(说明另一形态的电路装置的实施例4)
参照图21~图26说明另一形态的电路装置10的结构及其制造方法。
参照图11,另一形态的电路装置10主要包括:电路元件半导体元件12A及片状部件12B,安装半导体元件12A及片状部件12B的导电图案11,自下面露出导电图案11的背面而覆盖电路元件12及导电图案11的绝缘树脂13。并且,导电图案11具有多层配线结构,由第一导电图案11A和第二导电图案11B构成。第二导电图案11B由保护层17覆盖,自保护层17的开口部露出的第二导电图案11B的背面上形成有由焊剂等构成的外部电极9。
本实施例的电路装置10和实施例1说明的电路装置10在导电图案10的结构上不同。也就是说,在本实施例的电路装置10中,导电图案由介由绝缘层18绝缘的第一导电图案11A和第二导电图案11B构成。因此,导电图案构成多层配线,可实现更复杂的结构。下面说明本实施例的电路装置10的制造方法。另外,形成导电图案的工序以外的工序与上述实施例2同样。也就是说形成通孔的工序、加工外部电极的工序、用激光分离各电路装置的工序与实施例2同样。下面说明本实施例的电路装置10的具体制造方法。
首先,参照图22,准备绝缘板43。该板是介由绝缘层层积了第一导电膜41及第二绝缘膜42的板。第一绝缘膜41形成第一导电图案11A,为了形成微细图案,形成得很薄。与此相对,第二导电膜42具有在进行模装之前支承整体的作用,故要求高的强度,形成得比第一导电膜41厚。
参照图23,形成导电图案11,用绝缘层覆盖导电图案11。具体地说,首先通过选择性蚀刻第一导电膜41形成第一导电图案11A。然后用绝缘层18覆盖第一导电图案11A。然后,通过局部除去绝缘层18,使形成焊盘的部位的第一导电图案11A露出。该部分的绝缘层18的除去可使用激光进行。然后,在露出的导电图案11的表面上形成镀膜19。然后,在本工序中,在局部削除绝缘层18后,通过形成镀膜,将第一导电图案11A和第二导电图案11B电连接。
参照图24,进行半导体元件12A的固定和电连接,并由绝缘树脂13进行覆盖。具体地说,用绝缘性粘接剂等将半导体元件12A固定在绝缘层18上。然后,用金属配线14将半导体元件12A的电极和第一导电图案11A的露出部分电连接。再由绝缘树脂13密封半导体元件12A、金属配线14。该密封可通过传递模、注射模或罐封等进行。
参照图25,自背面局部除去第二导电图案,形成第二导电图案11B。第二导电图案12B形成用于形成配线部及外部电极的焊盘。最后,参照图26,在第二导电图案11B的背面形成外部电极9。
(说明另一形态的电路装置的实施例5)
参照图27~图30说明另一形态的电路装置10的结构及其制造方法。
参照图27,另一形态的电路装置10主要包括:电路元件半导体元件12A及片状部件12B,安装半导体元件12A及片状部件12B的导电图案11,表面上形成导电图案11的挠性板48和覆盖电路元件12及导电图案11的绝缘树脂13。并且,导电图案11的背面上形成有由焊剂等构成的外部电极9。
本实施例的电路装置10中导电图案11形成于挠性板48表面上,这一点和实施例1的电路装置10不同。
下面说明本实施例的电路装置10的制造方法。形成导电图案的工序以外的工序与上述实施例2同样。也就是说形成通孔的工序、加工外部电极的工序、用激光分离各电路装置的工序与实施例2同样。
参照图28,在挠性板48的表面上形成导电图案11。然后,参照图29,在由导电图案11构成的小片焊盘上固定半导体元件12A,然后将半导体元件12A的电极和导电图案11电连接。再由绝缘层18密封半导体元件12A、金属配线14及导电图案11。最后,参照图30,局部除去挠性板48的所希望部位,使导电图案11的背面露出,然后,在该部位形成外部电极9。
本发明可实现下述的效果。
第一,由于用激光分离电路装置10,故可制造具有任意外形形状的电路装置。因此,可制造对应移动电话等装置的箱体内部等的电路装置。另外,由于激光仅切除绝缘树脂13,故可防止激光引起的发热损伤电路元件的现象。
第二,目前,是将半导体元件12A等电路元件安装在印刷电路板上,而本发明中,电路装置10自身呈内装电路装置的衬底,故可将电路装置10安装在装置的箱体内部。另外,由于不需要目前的印刷电路板,故可实现轻量化。
第三,由于可用激光形成侧面垂直形成的通孔15,故可将该通孔15用作螺钉孔等。
第四,由于可使外部电极9的厚度方向的高度均一,故可可靠地进行外部电极9与外部的电连接。
第五,由于可沿着由电路元件及导电图案形成的电气电路的形状形成装置的外形,故可减少用于密封的绝缘树脂的量。
Claims (15)
1、一种电路装置,其特征在于,包括电路元件、固定所述电路元件并形成配线的导电图案和密封所述电路元件及所述导电图案的绝缘树脂,所述绝缘树脂的侧面部由激光切割。
2、如权利要求1所述的电路装置,其特征在于,由所述绝缘树脂构成的外周部的一部分呈曲线。
3、如权利要求1所述的电路装置,其特征在于,由所述绝缘树脂构成的外周部的角部形成锐角或钝角。
4、一种电路装置的制造方法,其特征在于,包括下述工序:将构成同种或异种电路装置的导电图案形成于导电箔上;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件;用激光切除基于各电路装置外周部的任意形状的部位的所述绝缘树脂,分离出所述各电路装置。
5、一种电路装置的制造方法,其特征在于,包括下述工序:在除去成为构成同种或异种电路装置的导电图案的部位后的区域的导电箔上,形成比所述导电箔的厚度浅的分离槽;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件,并充填所述分离槽;除去所述导电箔的背面直至露出所述绝缘树脂;用激光切除基于各电路装置外周部的任意形状的部位的所述绝缘树脂,分离出所述各电路装置。
6、如权利要求4或5所述的电路装置的制造方法,其特征在于,用所述激光仅除去所述绝缘树脂。
7、如权利要求4或5所述的电路装置的制造方法,其特征在于,用二氧化碳气激光除去所述绝缘树脂。
8、如权利要求4或5所述的电路装置的制造方法,其特征在于,所述导电图案构成小片焊盘、焊盘及配线。
9、如权利要求4或5所述的电路装置的制造方法,其特征在于,由所述绝缘树脂构成的外周部的一部分形成曲线状。
10、如权利要求4或5所述的电路装置的制造方法,其特征在于,由所述绝缘树脂构成的外周部的角部形成锐角或钝角。
11、一种电路装置的制造方法,其特征在于,包括下述工序:将构成至少一个电路装置的导电图案区域性形成于导电箔上;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件;在所述绝缘树脂上形成通孔;分离为单个电路装置。
12、一种电路装置的制造方法,其特征在于,包括下述工序:在除去成为构成至少一个电路装置的导电图案的部位后的导电箔区域上,形成比所述导电箔的厚度浅的分离槽;将电路元件固定在所述导电图案上;用绝缘树脂进行模装,覆盖所述电路元件,并充填所述分离槽;在所述绝缘树脂上形成通孔,局部露出所述分离槽;除去形成所述分离槽的部位的剩余的所述导电箔的厚度部分,使充填于所述分离槽中的所述绝缘树脂和所述通孔露出;分离为单个电路装置。
13、如权利要求11或12所述的电路装置的制造方法,其特征在于,用激光形成所述通孔。
14、如权利要求11或12所述的电路装置的制造方法,其特征在于,通过用所述分离槽的表面反射所述激光,垂直形成所述通孔的侧面。
15、一种电路装置的制造方法,其背面形成由焊剂构成的多个外部电极,其特征在于,通过向所述电路装置的面方向照射激光,使所述外部电极的高度均一。
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US3024151A (en) * | 1957-09-30 | 1962-03-06 | Automated Circuits Inc | Printed electrical circuits and method of making the same |
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US4578573A (en) * | 1983-03-23 | 1986-03-25 | Datakey, Inc. | Portable electronic information devices and method of manufacture |
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US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
US5319522A (en) * | 1992-12-17 | 1994-06-07 | Ford Motor Company | Encapsulated product and method of manufacture |
US5355283A (en) * | 1993-04-14 | 1994-10-11 | Amkor Electronics, Inc. | Ball grid array with via interconnection |
US5528457A (en) * | 1994-12-21 | 1996-06-18 | Gennum Corporation | Method and structure for balancing encapsulation stresses in a hybrid circuit assembly |
US5832600A (en) * | 1995-06-06 | 1998-11-10 | Seiko Epson Corporation | Method of mounting electronic parts |
US6001671A (en) * | 1996-04-18 | 1999-12-14 | Tessera, Inc. | Methods for manufacturing a semiconductor package having a sacrificial layer |
JP3638771B2 (ja) * | 1997-12-22 | 2005-04-13 | 沖電気工業株式会社 | 半導体装置 |
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KR100347706B1 (ko) * | 2000-08-09 | 2002-08-09 | 주식회사 코스타트반도체 | 이식성 도전패턴을 포함하는 반도체 패키지 및 그 제조방법 |
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