CN1486497A - 带有分段导电平面的平面电感器 - Google Patents
带有分段导电平面的平面电感器 Download PDFInfo
- Publication number
- CN1486497A CN1486497A CNA018220916A CN01822091A CN1486497A CN 1486497 A CN1486497 A CN 1486497A CN A018220916 A CNA018220916 A CN A018220916A CN 01822091 A CN01822091 A CN 01822091A CN 1486497 A CN1486497 A CN 1486497A
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- China
- Prior art keywords
- inductor
- conductive segment
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- conductive
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims 2
- 239000012634 fragment Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
- H01F27/363—Electric or magnetic shields or screens made of electrically conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/745,068 US6593838B2 (en) | 2000-12-19 | 2000-12-19 | Planar inductor with segmented conductive plane |
US09/745,068 | 2000-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1486497A true CN1486497A (zh) | 2004-03-31 |
CN1273996C CN1273996C (zh) | 2006-09-06 |
Family
ID=24995129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018220916A Expired - Fee Related CN1273996C (zh) | 2000-12-19 | 2001-11-06 | 带有分段导电平面的平面电感器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6593838B2 (zh) |
JP (1) | JP4028382B2 (zh) |
KR (1) | KR100829201B1 (zh) |
CN (1) | CN1273996C (zh) |
AU (1) | AU2002225919A1 (zh) |
TW (1) | TWI293765B (zh) |
WO (1) | WO2002050848A2 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101459177B (zh) * | 2007-12-13 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法 |
CN102820286A (zh) * | 2012-07-16 | 2012-12-12 | 昆山华太电子技术有限公司 | 一种提高功率集成电路无源器件性能的结构 |
CN105845398A (zh) * | 2016-03-23 | 2016-08-10 | 中国科学院上海微系统与信息技术研究所 | 一种电感屏蔽环 |
CN106024340A (zh) * | 2016-08-02 | 2016-10-12 | 成都线易科技有限责任公司 | 具有屏蔽结构的变压器 |
CN106558401A (zh) * | 2015-09-25 | 2017-04-05 | 瑞昱半导体股份有限公司 | 积体电感/变压器的屏蔽结构 |
CN106663669A (zh) * | 2014-09-02 | 2017-05-10 | 高通股份有限公司 | 图案化接地以及形成图案化接地的方法 |
CN107564662A (zh) * | 2016-07-01 | 2018-01-09 | 株式会社村田制作所 | 共模扼流圈 |
CN109637999A (zh) * | 2018-12-19 | 2019-04-16 | 上海华力集成电路制造有限公司 | 硅基电感结构及其中的封闭线的版图 |
CN111312694A (zh) * | 2016-06-24 | 2020-06-19 | 瑞昱半导体股份有限公司 | 图案式防护结构 |
CN113224036A (zh) * | 2020-01-21 | 2021-08-06 | 瑞昱半导体股份有限公司 | 图案化屏蔽结构以及集成电感 |
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FR2820875B1 (fr) * | 2001-02-12 | 2003-07-11 | St Microelectronics Sa | Structure d'inductance integree |
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US6756656B2 (en) * | 2002-07-11 | 2004-06-29 | Globespanvirata Incorporated | Inductor device with patterned ground shield and ribbing |
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US6775807B2 (en) * | 2002-08-19 | 2004-08-10 | Intersil Americas Inc. | Numerically modeling inductive circuit elements |
CN100468717C (zh) * | 2002-12-13 | 2009-03-11 | Nxp股份有限公司 | 平面电感元件和包括平面电感元件的集成电路 |
WO2005008695A2 (en) | 2003-07-23 | 2005-01-27 | Koninklijke Philips Electronics N.V. | Inductive and capacitive elements for semiconductor technologies with minimum pattern density requirements |
US6833603B1 (en) * | 2003-08-11 | 2004-12-21 | International Business Machines Corporation | Dynamically patterned shielded high-Q inductor |
US20050104158A1 (en) * | 2003-11-19 | 2005-05-19 | Scintera Networks, Inc. | Compact, high q inductor for integrated circuit |
US6940386B2 (en) * | 2003-11-19 | 2005-09-06 | Scintera Networks, Inc | Multi-layer symmetric inductor |
US7084728B2 (en) * | 2003-12-15 | 2006-08-01 | Nokia Corporation | Electrically decoupled integrated transformer having at least one grounded electric shield |
US7436281B2 (en) * | 2004-07-30 | 2008-10-14 | Texas Instruments Incorporated | Method to improve inductance with a high-permeability slotted plate core in an integrated circuit |
US7663205B2 (en) * | 2004-08-03 | 2010-02-16 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a dummy gate structure below a passive electronic element |
JP2006059959A (ja) * | 2004-08-19 | 2006-03-02 | Oki Electric Ind Co Ltd | 半導体装置、及び半導体装置の製造方法 |
US7247922B2 (en) * | 2004-09-24 | 2007-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inductor energy loss reduction techniques |
US20060141804A1 (en) * | 2004-12-28 | 2006-06-29 | Goodman Cathryn E | Method and apparatus to facilitate electrostatic discharge resiliency |
WO2007119426A1 (ja) * | 2006-03-24 | 2007-10-25 | Matsushita Electric Industrial Co., Ltd. | インダクタンス部品 |
US7531407B2 (en) | 2006-07-18 | 2009-05-12 | International Business Machines Corporation | Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same |
US20080029854A1 (en) * | 2006-08-03 | 2008-02-07 | United Microelectronics Corp. | Conductive shielding pattern and semiconductor structure with inductor device |
TWI303957B (en) * | 2006-12-11 | 2008-12-01 | Ind Tech Res Inst | Embedded inductor devices and fabrication methods thereof |
US7652355B2 (en) * | 2007-08-01 | 2010-01-26 | Chartered Semiconductor Manufacturing, Ltd. | Integrated circuit shield structure |
US8492872B2 (en) * | 2007-10-05 | 2013-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | On-chip inductors with through-silicon-via fence for Q improvement |
US7936246B2 (en) * | 2007-10-09 | 2011-05-03 | National Semiconductor Corporation | On-chip inductor for high current applications |
TWI349362B (en) * | 2007-12-07 | 2011-09-21 | Realtek Semiconductor Corp | Integrated inductor |
US20090321876A1 (en) * | 2008-06-30 | 2009-12-31 | Telesphor Kamgaing | System with radio frequency integrated circuits |
EP2297751B1 (en) * | 2008-07-02 | 2013-02-13 | Nxp B.V. | Planar, monolithically integrated coil |
US8975725B2 (en) * | 2008-12-04 | 2015-03-10 | Nec Corporation | Bias circuit and method of manufacturing the same |
JP5339974B2 (ja) * | 2009-03-11 | 2013-11-13 | 新光電気工業株式会社 | インダクタ装置及びその製造方法 |
US9142342B2 (en) | 2010-05-17 | 2015-09-22 | Ronald Lambert Haner | Compact-area capacitive plates for use with spiral inductors having more than one turn |
US20120241905A1 (en) * | 2011-03-25 | 2012-09-27 | Tang William W K | Substrate isolation structure |
US8692608B2 (en) | 2011-09-19 | 2014-04-08 | United Microelectronics Corp. | Charge pump system capable of stabilizing an output voltage |
US9030221B2 (en) | 2011-09-20 | 2015-05-12 | United Microelectronics Corporation | Circuit structure of test-key and test method thereof |
US8395455B1 (en) | 2011-10-14 | 2013-03-12 | United Microelectronics Corp. | Ring oscillator |
US8421509B1 (en) | 2011-10-25 | 2013-04-16 | United Microelectronics Corp. | Charge pump circuit with low clock feed-through |
US8588020B2 (en) | 2011-11-16 | 2013-11-19 | United Microelectronics Corporation | Sense amplifier and method for determining values of voltages on bit-line pair |
US8580647B2 (en) * | 2011-12-19 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inductors with through VIAS |
US8493806B1 (en) | 2012-01-03 | 2013-07-23 | United Microelectronics Corporation | Sense-amplifier circuit of memory and calibrating method thereof |
US8766402B2 (en) * | 2012-06-05 | 2014-07-01 | Freescale Semiconductor, Inc. | Inductive element with interrupter region |
US8970197B2 (en) | 2012-08-03 | 2015-03-03 | United Microelectronics Corporation | Voltage regulating circuit configured to have output voltage thereof modulated digitally |
US8724404B2 (en) | 2012-10-15 | 2014-05-13 | United Microelectronics Corp. | Memory, supply voltage generation circuit, and operation method of a supply voltage generation circuit used for a memory array |
US8669897B1 (en) | 2012-11-05 | 2014-03-11 | United Microelectronics Corp. | Asynchronous successive approximation register analog-to-digital converter and operating method thereof |
US8711598B1 (en) | 2012-11-21 | 2014-04-29 | United Microelectronics Corp. | Memory cell and memory cell array using the same |
US8873295B2 (en) | 2012-11-27 | 2014-10-28 | United Microelectronics Corporation | Memory and operation method thereof |
US8643521B1 (en) | 2012-11-28 | 2014-02-04 | United Microelectronics Corp. | Digital-to-analog converter with greater output resistance |
US9030886B2 (en) | 2012-12-07 | 2015-05-12 | United Microelectronics Corp. | Memory device and driving method thereof |
US8953401B2 (en) | 2012-12-07 | 2015-02-10 | United Microelectronics Corp. | Memory device and method for driving memory array thereof |
US8723052B1 (en) | 2013-02-27 | 2014-05-13 | Boulder Wind Power, Inc. | Methods and apparatus for optimizing electrical interconnects on laminated composite assemblies |
US8785784B1 (en) | 2013-03-13 | 2014-07-22 | Boulder Wind Power, Inc. | Methods and apparatus for optimizing structural layout of multi-circuit laminated composite assembly |
US8917109B2 (en) | 2013-04-03 | 2014-12-23 | United Microelectronics Corporation | Method and device for pulse width estimation |
US9105355B2 (en) | 2013-07-04 | 2015-08-11 | United Microelectronics Corporation | Memory cell array operated with multiple operation voltage |
US8947911B1 (en) | 2013-11-07 | 2015-02-03 | United Microelectronics Corp. | Method and circuit for optimizing bit line power consumption |
US8866536B1 (en) | 2013-11-14 | 2014-10-21 | United Microelectronics Corp. | Process monitoring circuit and method |
US9793775B2 (en) | 2013-12-31 | 2017-10-17 | Boulder Wind Power, Inc. | Methods and apparatus for reducing machine winding circulating current losses |
US9143143B2 (en) | 2014-01-13 | 2015-09-22 | United Microelectronics Corp. | VCO restart up circuit and method thereof |
TWI579869B (zh) | 2015-09-14 | 2017-04-21 | 瑞昱半導體股份有限公司 | 積體電感/變壓器的屏蔽結構 |
US10075138B2 (en) * | 2015-10-12 | 2018-09-11 | Qualcomm Incorporated | Inductor shielding |
RU2623100C1 (ru) * | 2015-12-14 | 2017-06-22 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Донской Государственный Технический Университет" (Дгту) | Планарная индуктивность с расширенным частотным диапазоном |
TWI591833B (zh) | 2016-07-29 | 2017-07-11 | 瑞昱半導體股份有限公司 | 堆疊式電容結構 |
US10593449B2 (en) | 2017-03-30 | 2020-03-17 | International Business Machines Corporation | Magnetic inductor with multiple magnetic layer thicknesses |
US10607759B2 (en) | 2017-03-31 | 2020-03-31 | International Business Machines Corporation | Method of fabricating a laminated stack of magnetic inductor |
US10597769B2 (en) | 2017-04-05 | 2020-03-24 | International Business Machines Corporation | Method of fabricating a magnetic stack arrangement of a laminated magnetic inductor |
US10347411B2 (en) | 2017-05-19 | 2019-07-09 | International Business Machines Corporation | Stress management scheme for fabricating thick magnetic films of an inductor yoke arrangement |
TWI641105B (zh) | 2017-07-13 | 2018-11-11 | 瑞昱半導體股份有限公司 | 積體電路結構、壓控振盪器及功率放大器 |
KR20190060642A (ko) * | 2017-11-24 | 2019-06-03 | 고쿠리츠 다이가쿠 호우징 나고야 다이가쿠 | 심부전의 예방 또는 치료용 의약 |
US11387315B2 (en) | 2020-01-21 | 2022-07-12 | Realtek Semiconductor Corporation | Patterned shielding structure and integrated inductor |
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US5760456A (en) * | 1995-12-21 | 1998-06-02 | Grzegorek; Andrew Z. | Integrated circuit compatible planar inductors with increased Q |
DE69737411T2 (de) * | 1997-02-28 | 2007-10-31 | Telefonaktiebolaget Lm Ericsson (Publ) | Verbesserter q-Induktor mit mehreren Metallisierungsschichten |
AU6468198A (en) | 1997-05-02 | 1998-11-27 | Board Of Trustees Of The Leland Stanford Junior University | Patterned ground shields for integrated circuit inductors |
US5959522A (en) * | 1998-02-03 | 1999-09-28 | Motorola, Inc. | Integrated electromagnetic device and method |
US6310386B1 (en) * | 1998-12-17 | 2001-10-30 | Philips Electronics North America Corp. | High performance chip/package inductor integration |
US6310387B1 (en) * | 1999-05-03 | 2001-10-30 | Silicon Wave, Inc. | Integrated circuit inductor with high self-resonance frequency |
-
2000
- 2000-12-19 US US09/745,068 patent/US6593838B2/en not_active Expired - Lifetime
-
2001
- 2001-11-06 KR KR1020037008289A patent/KR100829201B1/ko not_active IP Right Cessation
- 2001-11-06 CN CNB018220916A patent/CN1273996C/zh not_active Expired - Fee Related
- 2001-11-06 WO PCT/US2001/046575 patent/WO2002050848A2/en active Application Filing
- 2001-11-06 AU AU2002225919A patent/AU2002225919A1/en not_active Abandoned
- 2001-11-06 JP JP2002551865A patent/JP4028382B2/ja not_active Expired - Fee Related
- 2001-12-18 TW TW090131375A patent/TWI293765B/zh not_active IP Right Cessation
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101459177B (zh) * | 2007-12-13 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法 |
CN102820286A (zh) * | 2012-07-16 | 2012-12-12 | 昆山华太电子技术有限公司 | 一种提高功率集成电路无源器件性能的结构 |
CN106663669A (zh) * | 2014-09-02 | 2017-05-10 | 高通股份有限公司 | 图案化接地以及形成图案化接地的方法 |
CN106558401B (zh) * | 2015-09-25 | 2018-08-10 | 瑞昱半导体股份有限公司 | 积体电感/变压器的屏蔽结构 |
CN106558401A (zh) * | 2015-09-25 | 2017-04-05 | 瑞昱半导体股份有限公司 | 积体电感/变压器的屏蔽结构 |
CN105845398A (zh) * | 2016-03-23 | 2016-08-10 | 中国科学院上海微系统与信息技术研究所 | 一种电感屏蔽环 |
CN111312694A (zh) * | 2016-06-24 | 2020-06-19 | 瑞昱半导体股份有限公司 | 图案式防护结构 |
CN107564662B (zh) * | 2016-07-01 | 2020-03-27 | 株式会社村田制作所 | 共模扼流圈 |
CN107564662A (zh) * | 2016-07-01 | 2018-01-09 | 株式会社村田制作所 | 共模扼流圈 |
CN106024340A (zh) * | 2016-08-02 | 2016-10-12 | 成都线易科技有限责任公司 | 具有屏蔽结构的变压器 |
CN109637999A (zh) * | 2018-12-19 | 2019-04-16 | 上海华力集成电路制造有限公司 | 硅基电感结构及其中的封闭线的版图 |
CN109637999B (zh) * | 2018-12-19 | 2020-11-24 | 上海华力集成电路制造有限公司 | 硅基电感结构及其中的封闭线的版图 |
CN113224036A (zh) * | 2020-01-21 | 2021-08-06 | 瑞昱半导体股份有限公司 | 图案化屏蔽结构以及集成电感 |
Also Published As
Publication number | Publication date |
---|---|
TWI293765B (en) | 2008-02-21 |
KR100829201B1 (ko) | 2008-05-13 |
US20020074620A1 (en) | 2002-06-20 |
WO2002050848A2 (en) | 2002-06-27 |
CN1273996C (zh) | 2006-09-06 |
AU2002225919A1 (en) | 2002-07-01 |
KR20030072368A (ko) | 2003-09-13 |
JP2004519844A (ja) | 2004-07-02 |
WO2002050848A3 (en) | 2002-08-29 |
US6593838B2 (en) | 2003-07-15 |
JP4028382B2 (ja) | 2007-12-26 |
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