CN1479560A - 发光显示器件及其制作方法 - Google Patents
发光显示器件及其制作方法 Download PDFInfo
- Publication number
- CN1479560A CN1479560A CNA031460003A CN03146000A CN1479560A CN 1479560 A CN1479560 A CN 1479560A CN A031460003 A CNA031460003 A CN A031460003A CN 03146000 A CN03146000 A CN 03146000A CN 1479560 A CN1479560 A CN 1479560A
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- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 13
- 238000005488 sandblasting Methods 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 6
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- 238000005401 electroluminescence Methods 0.000 description 41
- 239000010408 film Substances 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 10
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
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- 238000005336 cracking Methods 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
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- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- -1 ethylidene dioxy Chemical group 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- PZWLRLIAVLSBQU-UHFFFAOYSA-N 1,2-dioctyl-9h-fluorene Chemical compound C1=CC=C2C3=CC=C(CCCCCCCC)C(CCCCCCCC)=C3CC2=C1 PZWLRLIAVLSBQU-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920000285 Polydioctylfluorene Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002215371 | 2002-07-24 | ||
JP215371/2002 | 2002-07-24 | ||
JP2003164010A JP4136799B2 (ja) | 2002-07-24 | 2003-06-09 | El表示素子の形成方法 |
JP164010/2003 | 2003-06-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1479560A true CN1479560A (zh) | 2004-03-03 |
CN100347860C CN100347860C (zh) | 2007-11-07 |
Family
ID=30117485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031460003A Expired - Lifetime CN100347860C (zh) | 2002-07-24 | 2003-07-18 | 电致发光器件及其制作方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6954031B2 (zh) |
EP (1) | EP1387406B1 (zh) |
JP (1) | JP4136799B2 (zh) |
KR (1) | KR100997615B1 (zh) |
CN (1) | CN100347860C (zh) |
TW (1) | TWI222335B (zh) |
Cited By (5)
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US7635947B2 (en) | 2005-08-29 | 2009-12-22 | Chunghwa Picture Tubes, Ltd. | Organic electro-luminescence device comprising uniform thickness light-emitting layer |
CN101076211B (zh) * | 2006-05-19 | 2012-09-05 | 精工爱普生株式会社 | 设备、膜形成方法及设备的制造方法 |
CN102962773A (zh) * | 2012-09-21 | 2013-03-13 | 沈李豪 | 去除led衬底的方法及以其方法制得的led芯片 |
US8984785B2 (en) | 2010-11-05 | 2015-03-24 | Samsung Display Co., Ltd. | Display device with decorative filled groove |
CN104823296B (zh) * | 2012-11-09 | 2017-05-17 | Oled工厂有限责任公司 | 具有改进的内部外耦合的发光器件和提供该器件的方法 |
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JPH0936608A (ja) * | 1995-07-13 | 1997-02-07 | Tokin Corp | 同軸型誘電体共振器を用いた高周波電子部品 |
US7789756B2 (en) * | 2002-09-13 | 2010-09-07 | Igt | Wagering gaming device having simulated control of movement of game functional elements |
US6831407B2 (en) * | 2002-10-15 | 2004-12-14 | Eastman Kodak Company | Oled device having improved light output |
TW591281B (en) * | 2002-10-25 | 2004-06-11 | Ritdisplay Corp | Organic light-emitting panel, electrode substrate and method for manufacturing the electrode substrate |
NL1022269C2 (nl) * | 2002-12-24 | 2004-06-25 | Otb Group Bv | Werkwijze voor het vervaardigen van een organic electroluminescent display device, substraat ten gebruike bij een dergelijke werkwijze, alsmede een organic electroluminescent display device verkregen met de werkwijze. |
JP2004235019A (ja) * | 2003-01-30 | 2004-08-19 | Hitachi Displays Ltd | 有機発光表示装置 |
EP1478034A2 (en) * | 2003-05-16 | 2004-11-17 | Kabushiki Kaisha Toyota Jidoshokki | Light-emitting apparatus and method for forming the same |
JP4220305B2 (ja) | 2003-05-22 | 2009-02-04 | 三星エスディアイ株式会社 | 有機エレクトロルミネセンス素子 |
JPWO2005002010A1 (ja) * | 2003-06-27 | 2006-08-10 | 株式会社半導体エネルギー研究所 | 有機レーザー装置 |
JP2005050708A (ja) * | 2003-07-29 | 2005-02-24 | Samsung Sdi Co Ltd | 光学素子用基板及び有機エレクトロルミネッセンス素子並びに有機エレクトロルミネッセンス表示装置 |
US20050088084A1 (en) * | 2003-10-27 | 2005-04-28 | Eastman Kodak Company | Organic polarized light emitting diode display with polarizer |
KR100570978B1 (ko) * | 2004-02-20 | 2006-04-13 | 삼성에스디아이 주식회사 | 표면이 개질된 유기막층을 사용하는 유기 전계 발광디스플레이 디바이스 및 이의 제조 방법 |
JP4717882B2 (ja) * | 2004-06-14 | 2011-07-06 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改善された発光プロファイルを備えるled |
KR100611654B1 (ko) | 2004-06-29 | 2006-08-11 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 소자 및 그 제조방법 |
US7270592B2 (en) * | 2004-08-12 | 2007-09-18 | D4D Technologies, Llc | Milling machine |
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- 2003-06-27 US US10/606,744 patent/US6954031B2/en not_active Expired - Lifetime
- 2003-07-02 TW TW092118100A patent/TWI222335B/zh not_active IP Right Cessation
- 2003-07-15 EP EP03254652A patent/EP1387406B1/en not_active Expired - Lifetime
- 2003-07-18 CN CNB031460003A patent/CN100347860C/zh not_active Expired - Lifetime
- 2003-07-23 KR KR1020030050456A patent/KR100997615B1/ko active IP Right Grant
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CN102962773A (zh) * | 2012-09-21 | 2013-03-13 | 沈李豪 | 去除led衬底的方法及以其方法制得的led芯片 |
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KR20040010342A (ko) | 2004-01-31 |
US20060009133A1 (en) | 2006-01-12 |
JP4136799B2 (ja) | 2008-08-20 |
TWI222335B (en) | 2004-10-11 |
TW200403006A (en) | 2004-02-16 |
US6954031B2 (en) | 2005-10-11 |
JP2004111354A (ja) | 2004-04-08 |
US20040017152A1 (en) | 2004-01-29 |
US7192334B2 (en) | 2007-03-20 |
EP1387406B1 (en) | 2012-05-30 |
KR100997615B1 (ko) | 2010-11-30 |
EP1387406A3 (en) | 2007-10-17 |
EP1387406A2 (en) | 2004-02-04 |
CN100347860C (zh) | 2007-11-07 |
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