JP4717882B2 - 改善された発光プロファイルを備えるled - Google Patents
改善された発光プロファイルを備えるled Download PDFInfo
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- JP4717882B2 JP4717882B2 JP2007526658A JP2007526658A JP4717882B2 JP 4717882 B2 JP4717882 B2 JP 4717882B2 JP 2007526658 A JP2007526658 A JP 2007526658A JP 2007526658 A JP2007526658 A JP 2007526658A JP 4717882 B2 JP4717882 B2 JP 4717882B2
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- 238000009499 grossing Methods 0.000 claims description 64
- 239000002245 particle Substances 0.000 claims description 47
- 239000000084 colloidal system Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- -1 B 2 O 3 Inorganic materials 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 1
- 238000005286 illumination Methods 0.000 claims 1
- 238000000295 emission spectrum Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- YSTQWZZQKCCBAY-UHFFFAOYSA-L methylaluminum(2+);dichloride Chemical compound C[Al](Cl)Cl YSTQWZZQKCCBAY-UHFFFAOYSA-L 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 150000002896 organic halogen compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FYUZFGQCEXHZQV-UHFFFAOYSA-N triethoxy(hydroxy)silane Chemical compound CCO[Si](O)(OCC)OCC FYUZFGQCEXHZQV-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
Description
− シリコン(Si):トリアルキルオルトシリケート(trialkyl orthosilicate)、とりわけ、トリエチルオルトシリケート(triethyl orthosilicate)、シリコンアセチルアセトネート(silicon acetyl acetonate)、ジ-t-ブトキシ−ジ−アセトキシシラン(di-t-butoxy-di-acetoxysilane)、テトラメチルシクロテトラシロキサン(tetramethyl cyclotetrasiloxane)、シラン(silane)、とりわけ、ジシラン(disilane)、トリシラン(trisilane)(SiNXが用いられる場合特に好ましい)、シリコンオキシナイトライド(silicon oxynitride)
− ホウ素(B):トリアルキルボラン(trialkyl borane)、とりわけ、トリメチルボラン(trimethyl borane)
− アルミニウム(Al):トリアルコキシアルミニウム(trialkoxy aluminum)、とりわけ、Al(OC2H5)3
− ゲルマニウム(Ge):ゲルマニウムハロゲン化物、とりわけ、GeCl4
− ルビジウム(Rb):ルビジウムハロゲン化物、とりわけ、RbCl
− ガリウム(Ga):ガリウムハロゲン化物、とりわけ、GaCl3
− ハフニウム(Hf):ハフニウムハロゲン化物、とりわけ、HfF4
− タンタル(Ta):タンタルハロゲン化物、とりわけ、TaF5及び/又はTaCl5
− ジルコニウム(Zr):ジルコニウムハロゲン化物、とりわけ、ZrCI4
− チタン(Ti):チタンハロゲン化物、とりわけ、TiCl2、TiCl3、TiCl4
− 窒素(N):アンモニア(ammonia)、ヒドラジン(hydrazine)、N2O
− 炭素(C):炭化水素(hydrocarbon)、有機ハロゲン化合物、とりわけ、CC14、CHC13、CH2Cl2
Ra値を、非接触モードで動作される、原子間力顕微鏡(AFM)を用いて測定した。このようにして、サンプルにダメージを与えることなく高解像度を得た。
Claims (9)
- 基板、第1電極層、及び該基板と該第1電極層の間に位置する薄いコロイド層を有するLEDであって、前記コロイド層はコロイド粒子を有しており、前記第1電極層に面する前記コロイド層の外面がRa≦30nm且つRa≧1nmの粗度を持つように、前記コロイド層内のコロイド粒子間、及び前記コロイド層と前記第1電極層との間に位置するスムージング粒子を含むスムージング手段をさらに有するLEDにおいて、前記スムージング粒子は、前記コロイド層内の粒子の屈折率と異なる屈折率を持ち、この差は、≧|0.3|且つ≦|3|である、LED。
- 前記スムージング手段は、≧1.1且つ≦3.0の屈折率を持つことを特徴とする請求項1に記載のLED。
- 前記スムージング手段は、前記基板と前記第1電極層の間及び/又は前記コロイド層内若しくは前記コロイド層上に本質的に位置する少なくとも1つのスムージング層を有し、前記スムージング層の厚さと前記コロイド層の厚さの比が、≧0.9:1且つ≦5:1であることを特徴とする請求項1又は2に記載のLED。
- 前記スムージング層は、化学気相成長により前記コロイド層上に設けられることを特徴とする請求項1、2又は3に記載のLED。
- 前記スムージング層は、TiO2、TiC、TiN、Ti(C,N)、SiO2、B2O3、Al2O3、GeO2、Rb2O、Ga2O3、HfO2、Ta2O5、ZrO2、SiNX又はこれらの混合物を含む群から選択された材料を有することを特徴とする請求項1乃至4の何れか一項に記載のLED。
- 前記スムージング粒子は、反応性金属有機化合物から出発するゾル−ゲル法により生成されることを特徴とする請求項1乃至5の何れか一項に記載のLED。
- 前記スムージング粒子は、≧0nm且つ≦100nmの平均粒子サイズを持つことを特徴とする請求項1乃至6の何れか一項に記載のLED。
- 前記スムージング粒子は、TiO2、TiC、TiN、ZrO2、ZnO、SbSnO、InSnO、SB2O5、Al2O3若しくはこれらの混合物を含む群から選択された金属酸化物材料及び/又は有機材料を有することを特徴とする請求項1乃至7の何れか一項に記載のLED。
- − 家庭用アプリケーション
− 店舗照明
− 家庭照明
− アクセント照明
− スポット照明
− 劇場照明
− 光ファイバアプリケーション
− 投射照明
− 自己照明ディスプレイ
− ピクセルディスプレイ
− セグメント化ディスプレイ
− 警戒標識
− 医療照明アプリケーション
− 指示標識、及び
− 装飾照明
に用いる請求項1乃至8の何れか一項に記載のLEDを有するシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04102697 | 2004-06-14 | ||
EP04102697.2 | 2004-06-14 | ||
PCT/IB2005/051914 WO2005124887A2 (en) | 2004-06-14 | 2005-06-10 | Led with improved light emission profile |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008503064A JP2008503064A (ja) | 2008-01-31 |
JP4717882B2 true JP4717882B2 (ja) | 2011-07-06 |
Family
ID=35355561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007526658A Active JP4717882B2 (ja) | 2004-06-14 | 2005-06-10 | 改善された発光プロファイルを備えるled |
Country Status (5)
Country | Link |
---|---|
US (1) | US7969089B2 (ja) |
EP (1) | EP1759428B1 (ja) |
JP (1) | JP4717882B2 (ja) |
CN (1) | CN100555701C (ja) |
WO (1) | WO2005124887A2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1617290A1 (en) * | 2004-07-13 | 2006-01-18 | International Business Machines Corporation | Apparatus and method for maskless lithography |
JP5536977B2 (ja) * | 2007-03-30 | 2014-07-02 | パナソニック株式会社 | 面発光体 |
KR101548025B1 (ko) | 2007-07-27 | 2015-08-27 | 아사히 가라스 가부시키가이샤 | 투광성 기판, 그의 제조 방법, 유기 led 소자 및 그의 제조 방법 |
KR101014339B1 (ko) | 2008-01-10 | 2011-02-15 | 고려대학교 산학협력단 | 발광 효율이 향상된 질화물 발광 소자 및 그 제조 방법 |
WO2009158159A2 (en) * | 2008-06-26 | 2009-12-30 | 3M Innovative Properties Company | Light converting construction |
KR20110030630A (ko) * | 2008-06-26 | 2011-03-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 반도체 광 변환 구조물 |
JP2011526075A (ja) * | 2008-06-26 | 2011-09-29 | スリーエム イノベイティブ プロパティズ カンパニー | 光抽出器の作製方法 |
US20110101402A1 (en) * | 2008-06-26 | 2011-05-05 | Jun-Ying Zhang | Semiconductor light converting construction |
FR2944148B1 (fr) * | 2009-04-02 | 2012-03-02 | Saint Gobain | Procede de fabrication d'une structure a surface texturee pour dispositif a diode electroluminescente organique et structure a surface texturee obtenue par ce procede |
FR2944145B1 (fr) * | 2009-04-02 | 2011-08-26 | Saint Gobain | Procede de fabrication d'une structure a surface texturee pour dispositif a diode electroluminescente organique et structure a surface texturee |
DE102012206955B4 (de) | 2012-04-26 | 2016-09-22 | Osram Oled Gmbh | Verfahren zum Herstellen einer Streuschicht für elektromagnetische Strahlung |
DE102012109258B4 (de) * | 2012-09-28 | 2020-02-06 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes |
CN202948938U (zh) * | 2012-11-30 | 2013-05-22 | 法国圣戈班玻璃公司 | 光学组件及光伏器件 |
GB2523859B (en) * | 2014-08-01 | 2016-10-19 | Dupont Teijin Films U S Ltd Partnership | Polyester film assembly |
DE102015103805A1 (de) * | 2015-03-16 | 2016-09-22 | Osram Oled Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
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2005
- 2005-06-10 WO PCT/IB2005/051914 patent/WO2005124887A2/en not_active Application Discontinuation
- 2005-06-10 EP EP05746565.0A patent/EP1759428B1/en active Active
- 2005-06-10 JP JP2007526658A patent/JP4717882B2/ja active Active
- 2005-06-10 US US11/570,345 patent/US7969089B2/en active Active
- 2005-06-10 CN CNB200580019530XA patent/CN100555701C/zh active Active
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JPS618896A (ja) * | 1984-06-22 | 1986-01-16 | 関西日本電気株式会社 | 電界発光灯 |
JPH06203957A (ja) * | 1993-10-22 | 1994-07-22 | Nissan Motor Co Ltd | 分散型elパネルの製造方法 |
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US20030127973A1 (en) * | 2002-01-10 | 2003-07-10 | Weaver Michael Stuart | OLEDs having increased external electroluminescence quantum efficiencies |
JP2004111354A (ja) * | 2002-07-24 | 2004-04-08 | Fujitsu Ltd | 発光型表示素子およびその形成方法 |
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Publication number | Publication date |
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WO2005124887A3 (en) | 2006-03-16 |
CN100555701C (zh) | 2009-10-28 |
US20070257590A1 (en) | 2007-11-08 |
JP2008503064A (ja) | 2008-01-31 |
US7969089B2 (en) | 2011-06-28 |
CN1969402A (zh) | 2007-05-23 |
WO2005124887A2 (en) | 2005-12-29 |
EP1759428B1 (en) | 2016-05-18 |
EP1759428A2 (en) | 2007-03-07 |
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