CN1460290A - 有助于残留物去除的各向同性电阻器保护蚀刻 - Google Patents
有助于残留物去除的各向同性电阻器保护蚀刻 Download PDFInfo
- Publication number
- CN1460290A CN1460290A CN01815564A CN01815564A CN1460290A CN 1460290 A CN1460290 A CN 1460290A CN 01815564 A CN01815564 A CN 01815564A CN 01815564 A CN01815564 A CN 01815564A CN 1460290 A CN1460290 A CN 1460290A
- Authority
- CN
- China
- Prior art keywords
- film
- oxide
- polysilicon
- mask
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000001020 plasma etching Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 53
- 229920005591 polysilicon Polymers 0.000 claims description 51
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 101100373011 Drosophila melanogaster wapl gene Chemical class 0.000 claims 2
- 150000001868 cobalt Chemical class 0.000 claims 2
- 210000004483 pasc Anatomy 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 150000003608 titanium Chemical class 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/660,724 US6365481B1 (en) | 2000-09-13 | 2000-09-13 | Isotropic resistor protect etch to aid in residue removal |
US09/660,724 | 2000-09-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1460290A true CN1460290A (zh) | 2003-12-03 |
CN1266747C CN1266747C (zh) | 2006-07-26 |
Family
ID=24650719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018155642A Expired - Fee Related CN1266747C (zh) | 2000-09-13 | 2001-07-26 | 有助于残留物去除的各向同性电阻器保护蚀刻 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6365481B1 (zh) |
EP (1) | EP1346404A2 (zh) |
JP (1) | JP2004509465A (zh) |
KR (1) | KR100847365B1 (zh) |
CN (1) | CN1266747C (zh) |
AU (1) | AU2001279033A1 (zh) |
WO (1) | WO2002023612A2 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4982921B2 (ja) * | 2001-03-05 | 2012-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US6586311B2 (en) * | 2001-04-25 | 2003-07-01 | Advanced Micro Devices, Inc. | Salicide block for silicon-on-insulator (SOI) applications |
US6599831B1 (en) * | 2002-04-30 | 2003-07-29 | Advanced Micro Devices, Inc. | Metal gate electrode using silicidation and method of formation thereof |
US7622345B2 (en) * | 2005-03-17 | 2009-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming fully silicided gate electrodes and unsilicided poly resistors |
US20100148262A1 (en) * | 2008-12-17 | 2010-06-17 | Knut Stahrenberg | Resistors and Methods of Manufacture Thereof |
KR20110100738A (ko) * | 2010-03-05 | 2011-09-15 | 삼성전자주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
KR20220030341A (ko) | 2020-08-27 | 2022-03-11 | 삼성전자주식회사 | 반도체 소자 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58143566A (ja) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | 半導体装置及びその製造方法 |
US5304502A (en) * | 1988-11-08 | 1994-04-19 | Yamaha Corporation | Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor |
JPH04267329A (ja) * | 1991-02-22 | 1992-09-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2705476B2 (ja) * | 1992-08-07 | 1998-01-28 | ヤマハ株式会社 | 半導体装置の製造方法 |
US5610099A (en) * | 1994-06-28 | 1997-03-11 | Ramtron International Corporation | Process for fabricating transistors using composite nitride structure |
JPH0831949A (ja) * | 1994-07-08 | 1996-02-02 | Ricoh Co Ltd | デュアルゲート構造cmos半導体装置とその製造方法 |
JPH08102505A (ja) * | 1994-09-30 | 1996-04-16 | Sony Corp | 半導体装置の製造方法 |
KR100215845B1 (ko) * | 1997-03-17 | 1999-08-16 | 구본준 | 반도체소자 제조방법 |
EP0923116A1 (en) * | 1997-12-12 | 1999-06-16 | STMicroelectronics S.r.l. | Process for manufacturing integrated multi-crystal silicon resistors in MOS technology and integrated MOS device comprising multi-crystal silicon resistors |
KR20000043882A (ko) * | 1998-12-29 | 2000-07-15 | 김영환 | 반도체 소자의 소자 분리막 형성 방법 |
US6245627B1 (en) * | 1999-02-16 | 2001-06-12 | United Microelectronics Corp. | Method of fabricating a load resistor for an SRAM |
-
2000
- 2000-09-13 US US09/660,724 patent/US6365481B1/en not_active Expired - Lifetime
-
2001
- 2001-07-26 JP JP2002527560A patent/JP2004509465A/ja not_active Withdrawn
- 2001-07-26 EP EP01957272A patent/EP1346404A2/en not_active Withdrawn
- 2001-07-26 KR KR1020037003665A patent/KR100847365B1/ko not_active IP Right Cessation
- 2001-07-26 CN CNB018155642A patent/CN1266747C/zh not_active Expired - Fee Related
- 2001-07-26 AU AU2001279033A patent/AU2001279033A1/en not_active Abandoned
- 2001-07-26 WO PCT/US2001/023581 patent/WO2002023612A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR100847365B1 (ko) | 2008-07-21 |
WO2002023612A3 (en) | 2003-07-24 |
JP2004509465A (ja) | 2004-03-25 |
AU2001279033A1 (en) | 2002-03-26 |
WO2002023612A2 (en) | 2002-03-21 |
KR20030029993A (ko) | 2003-04-16 |
CN1266747C (zh) | 2006-07-26 |
US6365481B1 (en) | 2002-04-02 |
EP1346404A2 (en) | 2003-09-24 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20100705 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA, THE UNITED STATES TO: CAYMAN ISLANDS, BRITISH |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100705 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060726 Termination date: 20190726 |
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CF01 | Termination of patent right due to non-payment of annual fee |