CN1458256A - 化学机械研磨后洗涤液组合物 - Google Patents
化学机械研磨后洗涤液组合物 Download PDFInfo
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- CN1458256A CN1458256A CN03131434A CN03131434A CN1458256A CN 1458256 A CN1458256 A CN 1458256A CN 03131434 A CN03131434 A CN 03131434A CN 03131434 A CN03131434 A CN 03131434A CN 1458256 A CN1458256 A CN 1458256A
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- China
- Prior art keywords
- cmp
- acid
- copper
- fluid composition
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 title claims abstract description 32
- 239000007788 liquid Substances 0.000 title abstract description 9
- 238000004140 cleaning Methods 0.000 title description 7
- 239000000126 substance Substances 0.000 title description 6
- 238000000227 grinding Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000002253 acid Substances 0.000 claims abstract description 17
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 claims abstract description 17
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims abstract description 13
- 229930091371 Fructose Natural products 0.000 claims abstract description 12
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims abstract description 12
- 239000005715 Fructose Substances 0.000 claims abstract description 12
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 12
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 claims abstract description 11
- 239000008101 lactose Substances 0.000 claims abstract description 11
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 claims abstract description 10
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims abstract description 10
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims abstract description 10
- 239000008103 glucose Substances 0.000 claims abstract description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 69
- 239000010949 copper Substances 0.000 claims description 54
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 50
- 229910052802 copper Inorganic materials 0.000 claims description 50
- 235000006408 oxalic acid Nutrition 0.000 claims description 23
- 238000009991 scouring Methods 0.000 claims description 22
- 239000012530 fluid Substances 0.000 claims description 21
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- WQZGKKKJIJFFOK-PQMKYFCFSA-N alpha-D-mannose Chemical compound OC[C@H]1O[C@H](O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-PQMKYFCFSA-N 0.000 claims description 10
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000013543 active substance Substances 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- 229940095064 tartrate Drugs 0.000 claims description 3
- 150000007514 bases Chemical class 0.000 claims description 2
- 238000005406 washing Methods 0.000 abstract description 31
- 239000012535 impurity Substances 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 12
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 abstract 1
- 150000007513 acids Chemical class 0.000 abstract 1
- 229960005070 ascorbic acid Drugs 0.000 abstract 1
- 235000010323 ascorbic acid Nutrition 0.000 abstract 1
- 239000011668 ascorbic acid Substances 0.000 abstract 1
- 239000011859 microparticle Substances 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 21
- 230000007797 corrosion Effects 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 17
- 239000002245 particle Substances 0.000 description 14
- 229910000881 Cu alloy Inorganic materials 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 9
- 150000007524 organic acids Chemical class 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 aldehyde radical Chemical class 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- MKTJTLRLXTUJCM-UHFFFAOYSA-N azanium;hydrogen peroxide;hydroxide Chemical compound [NH4+].[OH-].OO MKTJTLRLXTUJCM-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- VSFGYNFCJOQAIL-UHFFFAOYSA-N hydrogen peroxide hydrate hydrochloride Chemical compound O.Cl.OO VSFGYNFCJOQAIL-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920006268 silicone film Polymers 0.000 description 1
- 229960002920 sorbitol Drugs 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Emergency Medicine (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
洗涤液组成(重量%) | |||
脂肪族多元羧酸 | 腐蚀防止剂 | 水 | |
比较例1 | 草酸3.4 | - | 96.6 |
比较例2 | 草酸0.34 | - | 99.66 |
比较例3 | 草酸0.06 | - | 99.94 |
比较例4 | 草酸0.34 | 苯并三唑1 | 98.66 |
比较例5 | 草酸0.34 | D-山梨糖醇5 | 94.66 |
比较例6 | 草酸0.34 | 巯基苯并噻唑1 | 98.66 |
比较例7 | 丙二酸5.0 | - | 95.0 |
实施例1 | 草酸0.34 | 乙醛酸0.03 | 99.63 |
实施例2 | 草酸0.34 | 乙醛酸0.1 | 99.56 |
实施例3 | 草酸0.06 | 乙醛酸1.0 | 98.94 |
实施例4 | 草酸0.34 | 乙醛酸0.05 | 99.61 |
实施例5 | 草酸3.4 | 乙醛酸0.1 | 96.5 |
实施例6 | 草酸0.34 | 抗坏血酸0.15 | 99.51 |
实施例7 | 草酸3.4 | 抗坏血酸1.0 | 95.6 |
实施例8 | 草酸0.06 | 果糖0.05 | 99.89 |
实施例9 | 草酸0.34 | 果糖0.5 | 99.16 |
实施例10 | 草酸3.4 | 甘露糖0.3 | 96.3 |
实施例11 | 草酸0.34 | 乳糖1.0 | 98.66 |
实施例12 | 丙二酸5.0 | 乙醛酸0.1 | 94.9 |
评价 | ||||
Fe表面浓度*1 | Cu表面浓度*2 | Cu蚀刻*3 | 侧缝*4 | |
比较例1 | 11.0 | 0.1↓ | × | × |
比较例2 | 20.0 | 0.1↓ | × | × |
比较例3 | 26.0 | 0.1↓ | × | × |
比较例4 | 21.0 | 0.1↓ | △ | × |
比较例5 | 20.3 | 0.1↓ | × | × |
比较例6 | 22.0 | 0.1↓ | △ | × |
比较例7 | 92.5 | 0.1↓ | × | × |
实施例1 | 21.0 | 0.1↓ | ◎ | ◎ |
实施例2 | 16.0 | 0.1↓ | ◎ | ◎ |
实施例3 | 31.0 | 0.1↓ | ◎ | ◎ |
实施例4 | 18.8 | 0.1↓ | ◎ | ◎ |
实施例5 | 11.5 | 0.1↓ | ◎ | ◎ |
实施例6 | 19.8 | 0.1↓ | ◎ | ◎ |
实施例7 | 12.0 | 0.1↓ | ◎ | ◎ |
实施例8 | 31.0 | 0.1↓ | ◎ | ◎ |
实施例9 | 22.2 | 0.1↓ | ◎ | ◎ |
实施例10 | 10.9 | 0.1↓ | ◎ | ◎ |
实施例11 | 23.3 | 0.1↓ | ◎ | ◎ |
实施例12 | 91.2 | 0.1↓ | ◎ | ◎ |
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-141003 | 2002-05-16 | ||
JP2002141003 | 2002-05-16 | ||
JP2002141003A JP4221191B2 (ja) | 2002-05-16 | 2002-05-16 | Cmp後洗浄液組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1458256A true CN1458256A (zh) | 2003-11-26 |
CN100429299C CN100429299C (zh) | 2008-10-29 |
Family
ID=29267807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031314341A Expired - Fee Related CN100429299C (zh) | 2002-05-16 | 2003-05-16 | 化学机械研磨后洗涤液组合物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7087562B2 (zh) |
EP (1) | EP1363321B1 (zh) |
JP (1) | JP4221191B2 (zh) |
KR (1) | KR100995316B1 (zh) |
CN (1) | CN100429299C (zh) |
DE (1) | DE60301907T2 (zh) |
TW (1) | TWI288175B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100416753C (zh) * | 2004-02-05 | 2008-09-03 | 株式会社东芝 | 制造半导体器件的方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040248405A1 (en) * | 2003-06-02 | 2004-12-09 | Akira Fukunaga | Method of and apparatus for manufacturing semiconductor device |
US7087564B2 (en) * | 2004-03-05 | 2006-08-08 | Air Liquide America, L.P. | Acidic chemistry for post-CMP cleaning |
JP4064943B2 (ja) * | 2004-04-02 | 2008-03-19 | 株式会社東芝 | 半導体装置の製造方法 |
US20050247675A1 (en) * | 2004-05-04 | 2005-11-10 | Texas Instruments Incorporated | Treatment of dies prior to nickel silicide formation |
JP2005347587A (ja) * | 2004-06-04 | 2005-12-15 | Sony Corp | ドライエッチング後の洗浄液組成物および半導体装置の製造方法 |
KR100634401B1 (ko) * | 2004-08-03 | 2006-10-16 | 삼성전자주식회사 | 반도체 제조공정의 기판 처리 방법 |
KR100630737B1 (ko) * | 2005-02-04 | 2006-10-02 | 삼성전자주식회사 | 금속 cmp 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법 |
US8257177B1 (en) | 2005-10-04 | 2012-09-04 | PICO Mobile Networks, Inc | Proximity based games for mobile communication devices |
US8411662B1 (en) | 2005-10-04 | 2013-04-02 | Pico Mobile Networks, Inc. | Beacon based proximity services |
JP2007220891A (ja) * | 2006-02-16 | 2007-08-30 | Toshiba Corp | ポストcmp処理液、およびこれを用いた半導体装置の製造方法 |
US9058975B2 (en) * | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
US7772128B2 (en) * | 2006-06-09 | 2010-08-10 | Lam Research Corporation | Semiconductor system with surface modification |
US8279884B1 (en) | 2006-11-21 | 2012-10-02 | Pico Mobile Networks, Inc. | Integrated adaptive jitter buffer |
US7970384B1 (en) | 2006-11-21 | 2011-06-28 | Picomobile Networks, Inc. | Active phone book enhancements |
US7951717B2 (en) * | 2007-03-06 | 2011-05-31 | Kabushiki Kaisha Toshiba | Post-CMP treating liquid and manufacturing method of semiconductor device using the same |
TWI598468B (zh) * | 2007-05-17 | 2017-09-11 | 恩特葛瑞斯股份有限公司 | 用於移除化學機械研磨後殘留物之清洗組成物、套組及方法 |
JP5192953B2 (ja) * | 2007-09-14 | 2013-05-08 | 三洋化成工業株式会社 | 磁気ディスク用ガラス基板洗浄剤 |
JP5561914B2 (ja) | 2008-05-16 | 2014-07-30 | 関東化学株式会社 | 半導体基板洗浄液組成物 |
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2002
- 2002-05-16 JP JP2002141003A patent/JP4221191B2/ja not_active Expired - Fee Related
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2003
- 2003-05-09 US US10/435,165 patent/US7087562B2/en not_active Expired - Fee Related
- 2003-05-12 TW TW092112853A patent/TWI288175B/zh not_active IP Right Cessation
- 2003-05-14 EP EP03010761A patent/EP1363321B1/en not_active Expired - Fee Related
- 2003-05-14 DE DE60301907T patent/DE60301907T2/de not_active Expired - Lifetime
- 2003-05-14 KR KR1020030030679A patent/KR100995316B1/ko not_active IP Right Cessation
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100416753C (zh) * | 2004-02-05 | 2008-09-03 | 株式会社东芝 | 制造半导体器件的方法 |
Also Published As
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DE60301907D1 (de) | 2006-03-02 |
US7087562B2 (en) | 2006-08-08 |
JP2003332290A (ja) | 2003-11-21 |
TW200400257A (en) | 2004-01-01 |
TWI288175B (en) | 2007-10-11 |
JP4221191B2 (ja) | 2009-02-12 |
DE60301907T2 (de) | 2006-04-27 |
KR100995316B1 (ko) | 2010-11-19 |
EP1363321B1 (en) | 2005-10-19 |
EP1363321A2 (en) | 2003-11-19 |
CN100429299C (zh) | 2008-10-29 |
EP1363321A3 (en) | 2003-12-03 |
KR20040014168A (ko) | 2004-02-14 |
US20030216270A1 (en) | 2003-11-20 |
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