DE60301907D1 - Reinigungsmittel nach CMP-Gebrauch - Google Patents

Reinigungsmittel nach CMP-Gebrauch

Info

Publication number
DE60301907D1
DE60301907D1 DE60301907T DE60301907T DE60301907D1 DE 60301907 D1 DE60301907 D1 DE 60301907D1 DE 60301907 T DE60301907 T DE 60301907T DE 60301907 T DE60301907 T DE 60301907T DE 60301907 D1 DE60301907 D1 DE 60301907D1
Authority
DE
Germany
Prior art keywords
cleaner
cmp use
cmp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60301907T
Other languages
English (en)
Other versions
DE60301907T2 (de
Inventor
Yumiko Abe
Takuo Oowada
Norio Ishikawa
Hidemitsu Aoki
Hiroaki Tomimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Chemical Co Inc
Renesas Electronics Corp
Original Assignee
Kanto Chemical Co Inc
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Chemical Co Inc, NEC Electronics Corp filed Critical Kanto Chemical Co Inc
Application granted granted Critical
Publication of DE60301907D1 publication Critical patent/DE60301907D1/de
Publication of DE60301907T2 publication Critical patent/DE60301907T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D2111/22—
DE60301907T 2002-05-16 2003-05-14 Reinigungsmittel nach CMP-Gebrauch Expired - Lifetime DE60301907T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002141003A JP4221191B2 (ja) 2002-05-16 2002-05-16 Ｃｍｐ後洗浄液組成物
JP2002141003 2002-05-16

Publications (2)

Publication Number Publication Date
DE60301907D1 true DE60301907D1 (de) 2006-03-02
DE60301907T2 DE60301907T2 (de) 2006-04-27

Family

ID=29267807

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60301907T Expired - Lifetime DE60301907T2 (de) 2002-05-16 2003-05-14 Reinigungsmittel nach CMP-Gebrauch

Country Status (7)

Country Link
US (1) US7087562B2 (de)
EP (1) EP1363321B1 (de)
JP (1) JP4221191B2 (de)
KR (1) KR100995316B1 (de)
CN (1) CN100429299C (de)
DE (1) DE60301907T2 (de)
TW (1) TWI288175B (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040248405A1 (en) * 2003-06-02 2004-12-09 Akira Fukunaga Method of and apparatus for manufacturing semiconductor device
JP3917593B2 (ja) * 2004-02-05 2007-05-23 株式会社東芝 半導体装置の製造方法
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
JP4064943B2 (ja) * 2004-04-02 2008-03-19 株式会社東芝 半導体装置の製造方法
US20050247675A1 (en) * 2004-05-04 2005-11-10 Texas Instruments Incorporated Treatment of dies prior to nickel silicide formation
JP2005347587A (ja) * 2004-06-04 2005-12-15 Sony Corp ドライエッチング後の洗浄液組成物および半導体装置の製造方法
KR100634401B1 (ko) * 2004-08-03 2006-10-16 삼성전자주식회사 반도체 제조공정의 기판 처리 방법
KR100630737B1 (ko) * 2005-02-04 2006-10-02 삼성전자주식회사 금속 ｃｍｐ 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법
US8411662B1 (en) 2005-10-04 2013-04-02 Pico Mobile Networks, Inc. Beacon based proximity services
US8257177B1 (en) 2005-10-04 2012-09-04 PICO Mobile Networks, Inc Proximity based games for mobile communication devices
JP2007220891A (ja) * 2006-02-16 2007-08-30 Toshiba Corp ポストｃｍｐ処理液、およびこれを用いた半導体装置の製造方法
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
US9058975B2 (en) * 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US7970384B1 (en) 2006-11-21 2011-06-28 Picomobile Networks, Inc. Active phone book enhancements
US8279884B1 (en) 2006-11-21 2012-10-02 Pico Mobile Networks, Inc. Integrated adaptive jitter buffer
US7951717B2 (en) * 2007-03-06 2011-05-31 Kabushiki Kaisha Toshiba Post-CMP treating liquid and manufacturing method of semiconductor device using the same
EP2164938B1 (de) * 2007-05-17 2017-06-21 Entegris Inc. Neue antioxidantien für nach cmp zum einsatz kommende reinigungsmittel
JP5192953B2 (ja) * 2007-09-14 2013-05-08 三洋化成工業株式会社 磁気ディスク用ガラス基板洗浄剤
JP5561914B2 (ja) * 2008-05-16 2014-07-30 関東化学株式会社 半導体基板洗浄液組成物
JP5232675B2 (ja) * 2009-01-26 2013-07-10 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法、並びに高分子化合物
CN102686786B (zh) * 2009-11-23 2016-01-06 梅特康有限责任公司 电解质溶液和电抛光方法
US9380401B1 (en) 2010-02-03 2016-06-28 Marvell International Ltd. Signaling schemes allowing discovery of network devices capable of operating in multiple network modes
US8580103B2 (en) 2010-11-22 2013-11-12 Metcon, Llc Electrolyte solution and electrochemical surface modification methods
DE112012005269T5 (de) * 2011-12-14 2014-10-16 Asahi Glass Company, Limited Reinigungsmittel und Verfahren zur Herstellung eines Siliziumcarbideinkristallsubstrats
EP2812422B1 (de) 2012-02-06 2019-08-07 Basf Se Reinigungszusammensetzung zum einsatz nach einer chemisch-mechanischen polierung mit einer spezifischen schwefelhaltigen verbindung und einem zuckeralkohol

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4140649A (en) * 1976-09-27 1979-02-20 Eduard Bossert Method and composition for cleaning the surfaces of foods and fodder
US4199469A (en) * 1978-06-21 1980-04-22 Feldmann Chemie Composition and method for cleaning drinking water tanks
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
JP2652320B2 (ja) * 1993-03-31 1997-09-10 住友シチックス株式会社 シリコンウェーハの洗浄方法
US6410494B2 (en) * 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
JP3219020B2 (ja) 1996-06-05 2001-10-15 和光純薬工業株式会社 洗浄処理剤
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
TW387936B (en) * 1997-08-12 2000-04-21 Kanto Kagaku Washing solution
JP3165801B2 (ja) 1997-08-12 2001-05-14 関東化学株式会社 洗浄液
US6593282B1 (en) * 1997-10-21 2003-07-15 Lam Research Corporation Cleaning solutions for semiconductor substrates after polishing of copper film
US6373999B2 (en) * 1998-07-22 2002-04-16 Hewlett-Packard Company Photoelectric imaging apparatus and method of using
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
JP3365980B2 (ja) * 1999-08-03 2003-01-14 花王株式会社 洗浄剤組成物
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
JP2001284308A (ja) * 2000-01-24 2001-10-12 Mitsubishi Chemicals Corp 表面に遷移金属又は遷移金属化合物を有する半導体デバイス用基板の洗浄液及び洗浄方法
JP2002069495A (ja) * 2000-06-16 2002-03-08 Kao Corp 洗浄剤組成物
US6326305B1 (en) * 2000-12-05 2001-12-04 Advanced Micro Devices, Inc. Ceria removal in chemical-mechanical polishing of integrated circuits
US7104869B2 (en) 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure

Also Published As

Publication number Publication date
DE60301907T2 (de) 2006-04-27
KR20040014168A (ko) 2004-02-14
US20030216270A1 (en) 2003-11-20
JP2003332290A (ja) 2003-11-21
KR100995316B1 (ko) 2010-11-19
EP1363321A3 (de) 2003-12-03
US7087562B2 (en) 2006-08-08
TWI288175B (en) 2007-10-11
TW200400257A (en) 2004-01-01
EP1363321A2 (de) 2003-11-19
CN100429299C (zh) 2008-10-29
JP4221191B2 (ja) 2009-02-12
CN1458256A (zh) 2003-11-26
EP1363321B1 (de) 2005-10-19

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