JP3917593B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP3917593B2 JP3917593B2 JP2004029552A JP2004029552A JP3917593B2 JP 3917593 B2 JP3917593 B2 JP 3917593B2 JP 2004029552 A JP2004029552 A JP 2004029552A JP 2004029552 A JP2004029552 A JP 2004029552A JP 3917593 B2 JP3917593 B2 JP 3917593B2
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- polishing
- organic acid
- cmp slurry
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- semiconductor wafer
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- 239000004065 semiconductor Substances 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000002002 slurry Substances 0.000 claims description 97
- 238000005498 polishing Methods 0.000 claims description 96
- 150000007524 organic acids Chemical class 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 32
- 239000007769 metal material Substances 0.000 claims description 23
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 21
- 229910021645 metal ion Inorganic materials 0.000 claims description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 19
- 239000010937 tungsten Substances 0.000 claims description 19
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052721 tungsten Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- -1 iron ions Chemical class 0.000 claims description 6
- 235000006408 oxalic acid Nutrition 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 66
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 39
- 235000012431 wafers Nutrition 0.000 description 29
- 238000004140 cleaning Methods 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 230000003628 erosive effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000008213 purified water Substances 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 150000007522 mineralic acids Chemical class 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- YNVZDODIHZTHOZ-UHFFFAOYSA-K 2-hydroxypropanoate;iron(3+) Chemical compound [Fe+3].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O YNVZDODIHZTHOZ-UHFFFAOYSA-K 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- PLKYGPRDCKGEJH-UHFFFAOYSA-N azane;2-hydroxypropane-1,2,3-tricarboxylic acid;iron Chemical compound N.[Fe].OC(=O)CC(O)(C(O)=O)CC(O)=O PLKYGPRDCKGEJH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- IMBKASBLAKCLEM-UHFFFAOYSA-L ferrous ammonium sulfate (anhydrous) Chemical compound [NH4+].[NH4+].[Fe+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O IMBKASBLAKCLEM-UHFFFAOYSA-L 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910000358 iron sulfate Inorganic materials 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- LHOWRPZTCLUDOI-UHFFFAOYSA-K iron(3+);triperchlorate Chemical compound [Fe+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O LHOWRPZTCLUDOI-UHFFFAOYSA-K 0.000 description 1
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten dioxide Inorganic materials O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本例では、図7(A)に示すように、シリコン基板31上にCVD法により二酸化シリコン膜32を形成した試料A、図7(B)に示すように、シリコン基板41上にCVD法により二酸化シリコン膜42を形成し、その上にPVD法によりチタンバリヤ膜43を形成した試料B、図7(C)に示すように、シリコン基板51上にCVD法により二酸化シリコン膜52を形成し、その上にPVD法によりチタン/窒化チタンバリヤ膜53を形成し、さらにその上にCVD法によりタングステン膜54を形成した試料Cを準備した。
本例では、図3に示す構造の半導体ウエハを準備した。配線10が形成されたシリコン基板11上に、絶縁膜12としてCVD法により二酸化シリコン膜を600nmの厚さに形成し、バリヤ膜13として、PVD法によりチタン/窒化チタン積層膜をそれぞれ30nmおよび5nmの厚さに形成し、金属材料層14として、CVD法によりタングステン層を400nmの厚さ(ビアホール121〜124の底部から上表面までの厚さ)に形成した。
本例では、バリヤ層53をチタンで形成した以外は図7(C)に示す構造の半導体ウエハを準備した。
Claims (7)
- 少なくとも1つの凹部を有する絶縁膜を含む下地層と、前記凹部を埋め、かつ前記下地層の頂表面上にわたって形成された金属材料層を半導体基板上に備える半導体ウエハを金属イオンを含有する基本CMPスラリーを供給しながら研磨処理に供して前記金属材料層の少なくとも一部を研磨除去し、しかる後前記基本CMPスラリーに前記金属イオンをキレート化する有機酸を添加してその有機酸添加CMPスラリーを用いて前記絶縁膜の表面が露出するまで研磨を行うことを含む半導体装置の製造方法。
- 前記研磨の終了後、前記基本CMPスラリーの供給を停止し、前記半導体ウエハの研磨表面に前記有機酸を供給しながら、前記半導体ウエハの研磨表面を洗浄することを特徴とする請求項1に記載の半導体装置の製造方法。
- 少なくとも1つの凹部を有する絶縁膜を含む下地層と、前記凹部を埋め、かつ前記下地層の頂表面上にわたって形成された金属材料層を半導体基板上に備える半導体ウエハを、1の研磨ステーションで、金属イオンを含有する基本CMPスラリーに有機酸を添加した有機酸添加CMPスラリーを供給しながら研磨処理に供して前記絶縁膜の表面が露出するまで研磨を行い、しかる後、前記基本CMPスラリーの供給を停止し、前記研磨ステーションで、前記半導体ウエハの研磨表面に前記有機酸を供給しながら、前記半導体ウエハの研磨表面を洗浄することを含む半導体装置の製造方法。
- 前記金属材料層が、タングステンを含むことを特徴とする請求項1ないし3のいずれか1項に記載の半導体装置の製造方法。
- 前記下地層が、前記凹部の内面および前記絶縁層の頂表面上にわたって形成されたバリヤ層を含むことを特徴とする請求項1ないし4のいずれか1項に記載の半導体装置の製造方法。
- 前記金属イオンが、鉄イオンを包含する請求項1ないし5のいずれか1項に記載の半導体装置の製造方法。
- 前記有機酸が、シュウ酸およびクエン酸からなる群の中から選ばれることを特徴とする請求項1ないし6のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004029552A JP3917593B2 (ja) | 2004-02-05 | 2004-02-05 | 半導体装置の製造方法 |
US10/944,866 US7413989B2 (en) | 2004-02-05 | 2004-09-21 | Method of manufacturing semiconductor device |
TW094102482A TWI250554B (en) | 2004-02-05 | 2005-01-27 | Method of manufacturing semiconductor device |
CNB2005100075668A CN100416753C (zh) | 2004-02-05 | 2005-02-05 | 制造半导体器件的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004029552A JP3917593B2 (ja) | 2004-02-05 | 2004-02-05 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005223139A JP2005223139A (ja) | 2005-08-18 |
JP3917593B2 true JP3917593B2 (ja) | 2007-05-23 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004029552A Expired - Fee Related JP3917593B2 (ja) | 2004-02-05 | 2004-02-05 | 半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7413989B2 (ja) |
JP (1) | JP3917593B2 (ja) |
CN (1) | CN100416753C (ja) |
TW (1) | TWI250554B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013041943A (ja) * | 2011-08-12 | 2013-02-28 | Toshiba Corp | 半導体装置の製造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070082479A1 (en) * | 2005-10-06 | 2007-04-12 | Applied Materials, Inc. | Chemical mechanical polishing techniques for integrated circuit fabrication |
JP2008091720A (ja) * | 2006-10-03 | 2008-04-17 | Toshiba Corp | 半導体装置の製造方法 |
CN102054682B (zh) * | 2007-02-16 | 2012-06-27 | 香港应用科技研究院有限公司 | 半导体发光装置及其制造方法 |
CN103578918B (zh) * | 2012-07-24 | 2017-08-29 | 无锡华润上华科技有限公司 | 降低半导体晶片表面电弧缺陷的方法 |
CN104637798B (zh) * | 2013-11-13 | 2018-07-24 | 中芯国际集成电路制造(北京)有限公司 | 金属栅极cmp工艺及半导体器件的制造方法 |
CN104745084B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子(上海)有限公司 | 一种用于铝的化学机械抛光液及使用方法 |
JP6418174B2 (ja) * | 2016-02-03 | 2018-11-07 | 株式会社Sumco | シリコンウェーハの片面研磨方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6039891A (en) | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
JP3575942B2 (ja) | 1997-02-28 | 2004-10-13 | 株式会社東芝 | 半導体装置の製造方法 |
JPH11176777A (ja) | 1997-12-11 | 1999-07-02 | Nec Corp | 半導体装置の製造方法 |
JP3003684B1 (ja) | 1998-09-07 | 2000-01-31 | 日本電気株式会社 | 基板洗浄方法および基板洗浄液 |
US20030087590A1 (en) | 1998-10-29 | 2003-05-08 | Ming-Sheng Yang | Method of planarization |
JP4573479B2 (ja) | 2001-09-04 | 2010-11-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2003229387A (ja) * | 2002-02-05 | 2003-08-15 | Toshiba Corp | 化学機械研磨用スラリおよび半導体装置の製造方法 |
JP4221191B2 (ja) * | 2002-05-16 | 2009-02-12 | 関東化学株式会社 | Cmp後洗浄液組成物 |
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2004
- 2004-02-05 JP JP2004029552A patent/JP3917593B2/ja not_active Expired - Fee Related
- 2004-09-21 US US10/944,866 patent/US7413989B2/en active Active
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2005
- 2005-01-27 TW TW094102482A patent/TWI250554B/zh active
- 2005-02-05 CN CNB2005100075668A patent/CN100416753C/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013041943A (ja) * | 2011-08-12 | 2013-02-28 | Toshiba Corp | 半導体装置の製造方法 |
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CN1652297A (zh) | 2005-08-10 |
TWI250554B (en) | 2006-03-01 |
JP2005223139A (ja) | 2005-08-18 |
TW200531141A (en) | 2005-09-16 |
US7413989B2 (en) | 2008-08-19 |
US20050176253A1 (en) | 2005-08-11 |
CN100416753C (zh) | 2008-09-03 |
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