CN1453791A - 磁存储器的导体结构 - Google Patents

磁存储器的导体结构 Download PDF

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Publication number
CN1453791A
CN1453791A CN03122470A CN03122470A CN1453791A CN 1453791 A CN1453791 A CN 1453791A CN 03122470 A CN03122470 A CN 03122470A CN 03122470 A CN03122470 A CN 03122470A CN 1453791 A CN1453791 A CN 1453791A
Authority
CN
China
Prior art keywords
conductor
width
thickness
memory cell
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN03122470A
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English (en)
Chinese (zh)
Inventor
M·巴塔查里亚
T·C·安东尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of CN1453791A publication Critical patent/CN1453791A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN03122470A 2002-04-25 2003-04-25 磁存储器的导体结构 Pending CN1453791A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/132,998 US6597049B1 (en) 2002-04-25 2002-04-25 Conductor structure for a magnetic memory
US10/132998 2002-04-25

Publications (1)

Publication Number Publication Date
CN1453791A true CN1453791A (zh) 2003-11-05

Family

ID=22456553

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03122470A Pending CN1453791A (zh) 2002-04-25 2003-04-25 磁存储器的导体结构

Country Status (6)

Country Link
US (1) US6597049B1 (enExample)
EP (1) EP1359589A3 (enExample)
JP (1) JP4601913B2 (enExample)
KR (1) KR101010320B1 (enExample)
CN (1) CN1453791A (enExample)
TW (1) TW200305879A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891193B1 (en) 2002-06-28 2005-05-10 Silicon Magnetic Systems MRAM field-inducing layer configuration
US7170706B2 (en) * 2002-08-29 2007-01-30 Freescale Semiconductor, Inc. Hard disk system with non-volatile IC based memory for storing data
US7006318B2 (en) 2002-08-29 2006-02-28 Freescale Semiconductor, Inc. Removable media storage system with memory for storing operational data
US7096378B2 (en) * 2002-08-29 2006-08-22 Freescale Semiconductor, Inc. Data storage system having a non-volatile IC based memory for storing user data
US6924539B2 (en) * 2002-08-30 2005-08-02 Hewlett-Packard Development Company, L.P. Magnetic memory cell having an annular data layer and a soft reference layer
US6822278B1 (en) * 2002-09-11 2004-11-23 Silicon Magnetic Systems Localized field-inducding line and method for making the same
JP2004111437A (ja) * 2002-09-13 2004-04-08 Toshiba Corp 磁気記憶装置
US7023723B2 (en) * 2002-11-12 2006-04-04 Nve Corporation Magnetic memory layers thermal pulse transitions
US6740947B1 (en) * 2002-11-13 2004-05-25 Hewlett-Packard Development Company, L.P. MRAM with asymmetric cladded conductor
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
KR100506932B1 (ko) * 2002-12-10 2005-08-09 삼성전자주식회사 기준 셀들을 갖는 자기 램 소자 및 그 구조체
US6921953B2 (en) * 2003-04-09 2005-07-26 Micron Technology, Inc. Self-aligned, low-resistance, efficient MRAM read/write conductors
US7264975B1 (en) 2003-09-25 2007-09-04 Cypress Semiconductor Corp. Metal profile for increased local magnetic fields in MRAM devices and method for making the same
US7071009B2 (en) 2004-04-01 2006-07-04 Headway Technologies, Inc. MRAM arrays with reduced bit line resistance and method to make the same
US7211874B2 (en) * 2004-04-06 2007-05-01 Headway Technologies, Inc. Magnetic random access memory array with free layer locking mechanism
JP4492941B2 (ja) * 2004-06-01 2010-06-30 ルネサスエレクトロニクス株式会社 半導体集積回路、半導体集積回路設計方法および半導体集積回路設計システム
JP4692805B2 (ja) * 2004-06-30 2011-06-01 Ｔｄｋ株式会社 磁気検出素子およびその形成方法
US7787289B2 (en) * 2007-12-03 2010-08-31 Magsil Corporation MRAM design with local write conductors of reduced cross-sectional area
EP2722902B1 (en) * 2012-10-22 2016-11-30 Crocus Technology S.A. Self-referenced MRAM element and device having improved magnetic field

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH412010A (de) * 1963-09-27 1966-04-30 Ibm Magnetschichtspeicher
JPH033255A (ja) * 1989-05-31 1991-01-09 Toshiba Corp 半導体集積回路装置
JPH03192759A (ja) * 1989-12-21 1991-08-22 Fujitsu Ltd 半導体装置
JPH07263631A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd 半導体集積回路装置の配線構造
US6256222B1 (en) * 1994-05-02 2001-07-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
US5946228A (en) * 1998-02-10 1999-08-31 International Business Machines Corporation Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
JP3891540B2 (ja) * 1999-10-25 2007-03-14 キヤノン株式会社 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびｍｒａｍ
US20020055190A1 (en) * 2000-01-27 2002-05-09 Anthony Thomas C. Magnetic memory with structures that prevent disruptions to magnetization in sense layer
JP3593652B2 (ja) * 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6331944B1 (en) * 2000-04-13 2001-12-18 International Business Machines Corporation Magnetic random access memory using a series tunnel element select mechanism
US6236590B1 (en) 2000-07-21 2001-05-22 Hewlett-Packard Company Optimal write conductors layout for improved performance in MRAM
JP4020573B2 (ja) * 2000-07-27 2007-12-12 富士通株式会社 磁性メモリデバイス、および磁性メモリデバイスにおけるデータ読み出し方法
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
US6498747B1 (en) * 2002-02-08 2002-12-24 Infineon Technologies Ag Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects

Also Published As

Publication number Publication date
JP4601913B2 (ja) 2010-12-22
TW200305879A (en) 2003-11-01
KR101010320B1 (ko) 2011-01-28
JP2004006833A (ja) 2004-01-08
KR20030084730A (ko) 2003-11-01
US6597049B1 (en) 2003-07-22
EP1359589A2 (en) 2003-11-05
EP1359589A3 (en) 2003-12-17

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRONICS CO., LTD

Free format text: FORMER OWNER: HEWLETT-PACKARD DEVELOPMENT COMPANY

Effective date: 20080118

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20080118

Address after: Gyeonggi Do, South Korea

Applicant after: Samsung Electronics Co., Ltd.

Address before: California, USA

Applicant before: Hewlett-Packard Co.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication