KR101010320B1 - 도전체 구조체 - Google Patents

도전체 구조체 Download PDF

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Publication number
KR101010320B1
KR101010320B1 KR1020030025986A KR20030025986A KR101010320B1 KR 101010320 B1 KR101010320 B1 KR 101010320B1 KR 1020030025986 A KR1020030025986 A KR 1020030025986A KR 20030025986 A KR20030025986 A KR 20030025986A KR 101010320 B1 KR101010320 B1 KR 101010320B1
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KR
South Korea
Prior art keywords
conductor
width
thickness
memory cell
magnetic field
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Expired - Fee Related
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KR1020030025986A
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English (en)
Korean (ko)
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KR20030084730A (ko
Inventor
바타챠리야마노즈
안토니토마스씨
Original Assignee
삼성전자주식회사
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Publication of KR20030084730A publication Critical patent/KR20030084730A/ko
Application granted granted Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020030025986A 2002-04-25 2003-04-24 도전체 구조체 Expired - Fee Related KR101010320B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/132,998 2002-04-25
US10/132,998 US6597049B1 (en) 2002-04-25 2002-04-25 Conductor structure for a magnetic memory

Publications (2)

Publication Number Publication Date
KR20030084730A KR20030084730A (ko) 2003-11-01
KR101010320B1 true KR101010320B1 (ko) 2011-01-28

Family

ID=22456553

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030025986A Expired - Fee Related KR101010320B1 (ko) 2002-04-25 2003-04-24 도전체 구조체

Country Status (6)

Country Link
US (1) US6597049B1 (enExample)
EP (1) EP1359589A3 (enExample)
JP (1) JP4601913B2 (enExample)
KR (1) KR101010320B1 (enExample)
CN (1) CN1453791A (enExample)
TW (1) TW200305879A (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891193B1 (en) 2002-06-28 2005-05-10 Silicon Magnetic Systems MRAM field-inducing layer configuration
US7170706B2 (en) * 2002-08-29 2007-01-30 Freescale Semiconductor, Inc. Hard disk system with non-volatile IC based memory for storing data
US7006318B2 (en) 2002-08-29 2006-02-28 Freescale Semiconductor, Inc. Removable media storage system with memory for storing operational data
US7096378B2 (en) * 2002-08-29 2006-08-22 Freescale Semiconductor, Inc. Data storage system having a non-volatile IC based memory for storing user data
US6924539B2 (en) * 2002-08-30 2005-08-02 Hewlett-Packard Development Company, L.P. Magnetic memory cell having an annular data layer and a soft reference layer
US6822278B1 (en) * 2002-09-11 2004-11-23 Silicon Magnetic Systems Localized field-inducding line and method for making the same
JP2004111437A (ja) * 2002-09-13 2004-04-08 Toshiba Corp 磁気記憶装置
US7023723B2 (en) * 2002-11-12 2006-04-04 Nve Corporation Magnetic memory layers thermal pulse transitions
US6740947B1 (en) * 2002-11-13 2004-05-25 Hewlett-Packard Development Company, L.P. MRAM with asymmetric cladded conductor
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
KR100506932B1 (ko) * 2002-12-10 2005-08-09 삼성전자주식회사 기준 셀들을 갖는 자기 램 소자 및 그 구조체
US6921953B2 (en) * 2003-04-09 2005-07-26 Micron Technology, Inc. Self-aligned, low-resistance, efficient MRAM read/write conductors
US7264975B1 (en) 2003-09-25 2007-09-04 Cypress Semiconductor Corp. Metal profile for increased local magnetic fields in MRAM devices and method for making the same
US7071009B2 (en) 2004-04-01 2006-07-04 Headway Technologies, Inc. MRAM arrays with reduced bit line resistance and method to make the same
US7211874B2 (en) * 2004-04-06 2007-05-01 Headway Technologies, Inc. Magnetic random access memory array with free layer locking mechanism
JP4492941B2 (ja) * 2004-06-01 2010-06-30 ルネサスエレクトロニクス株式会社 半導体集積回路、半導体集積回路設計方法および半導体集積回路設計システム
JP4692805B2 (ja) * 2004-06-30 2011-06-01 Ｔｄｋ株式会社 磁気検出素子およびその形成方法
US7787289B2 (en) * 2007-12-03 2010-08-31 Magsil Corporation MRAM design with local write conductors of reduced cross-sectional area
EP2722902B1 (en) * 2012-10-22 2016-11-30 Crocus Technology S.A. Self-referenced MRAM element and device having improved magnetic field

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033255A (ja) * 1989-05-31 1991-01-09 Toshiba Corp 半導体集積回路装置
JPH07263631A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd 半導体集積回路装置の配線構造
JP2002118239A (ja) * 2000-07-21 2002-04-19 Hewlett Packard Co <Hp> Ｍｒａｍの性能を向上させるための最適な書込導体レイアウト

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH412010A (de) * 1963-09-27 1966-04-30 Ibm Magnetschichtspeicher
JPH03192759A (ja) * 1989-12-21 1991-08-22 Fujitsu Ltd 半導体装置
US6256222B1 (en) * 1994-05-02 2001-07-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
US5946228A (en) * 1998-02-10 1999-08-31 International Business Machines Corporation Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
JP3891540B2 (ja) * 1999-10-25 2007-03-14 キヤノン株式会社 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびｍｒａｍ
US20020055190A1 (en) * 2000-01-27 2002-05-09 Anthony Thomas C. Magnetic memory with structures that prevent disruptions to magnetization in sense layer
JP3593652B2 (ja) * 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6331944B1 (en) * 2000-04-13 2001-12-18 International Business Machines Corporation Magnetic random access memory using a series tunnel element select mechanism
JP4020573B2 (ja) * 2000-07-27 2007-12-12 富士通株式会社 磁性メモリデバイス、および磁性メモリデバイスにおけるデータ読み出し方法
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
US6498747B1 (en) * 2002-02-08 2002-12-24 Infineon Technologies Ag Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033255A (ja) * 1989-05-31 1991-01-09 Toshiba Corp 半導体集積回路装置
JPH07263631A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd 半導体集積回路装置の配線構造
JP2002118239A (ja) * 2000-07-21 2002-04-19 Hewlett Packard Co <Hp> Ｍｒａｍの性能を向上させるための最適な書込導体レイアウト

Also Published As

Publication number Publication date
JP4601913B2 (ja) 2010-12-22
CN1453791A (zh) 2003-11-05
TW200305879A (en) 2003-11-01
JP2004006833A (ja) 2004-01-08
KR20030084730A (ko) 2003-11-01
US6597049B1 (en) 2003-07-22
EP1359589A2 (en) 2003-11-05
EP1359589A3 (en) 2003-12-17

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