CN1447984A - 带有多个发光二极管芯片的元件 - Google Patents

带有多个发光二极管芯片的元件 Download PDF

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Publication number
CN1447984A
CN1447984A CN01814562.0A CN01814562A CN1447984A CN 1447984 A CN1447984 A CN 1447984A CN 01814562 A CN01814562 A CN 01814562A CN 1447984 A CN1447984 A CN 1447984A
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light
emitting diode
backlight unit
diode chip
optoelectronic component
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K·阿恩特
G·博格勒
H·布吕纳
G·书特尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

一种带有多个布置在一反射器(3)中的发光二极管芯片的元件，其中通过一个中间壁(11)中断发光二极管芯片之间的直接照准线。由此大大改善了元件(1)的效率。

Description

带有多个发光二极管芯片的元件
本发明涉及一种如权利要求1前序部分所述的光电子元件。
这种元件是公知的。因为发光二极管芯片可以发出不同颜色的光，所以这种元件就可以用于发出多色的光。另外由于发光二极管通常设置在一个反射器中，尽管所发出的光多色，但该元件仍保持较小。
但在公知的这种元件中，光功率低于单个发光二极管芯片的光功率之和。
在该现有技术出发，本发明的任务是提出一种改善了光功率的元件。
根据本发明，该任务借助一种具有权利要求1所述特征的元件完成。
通过在本发明的元件中用一个光阑中断发光二极管芯片之间的直接照准线，使得从一个发光二极管芯片发出的辐射只有一小部分被其它发光二极管芯片吸收。通过这种措施消除了所产生损失的主要原因。因此本发明元件的光功率基本等于单个发光二极管芯片的光功率之和。
本发明的其它优选设计方案是从属权利要求的主题。
下面参照附图详细描述本发明的实施例。图示为：
图1可配备多个发光二极管芯片的元件的俯视图；
图2沿图1中II-II剖切线的横截面视图；
图3通过元件另一种实施例的横截面视图。
图1示出了一个元件1的俯视图，下面将借助图1和2进一步描述。元件1具有一个外壳2，在该外壳中形成一个凹处3。该凹处3的斜侧面4用作设置在凹处3中的发光二极管芯片5的反射器。发光二极管芯片5设置在一个接触支架6(引线框)上，其接线元件7从外壳2侧面伸出。接触支架6部分位于覆盖层8下面，该覆盖层8用于固定接触支架6。此外接触支架6被分为单个的用于发光二极管芯片5的着陆点和用于连结发光二极管芯片5的接线的连接面10。用于连结发光二极管芯片5的接线在图1和2中未示出。
发光二极管芯片5在外壳2中通常以0.8毫米的间距布置，分别从发光二极管芯片5的中心测量。在发光二极管芯片5的着陆点9之间有一个大约0.2毫米宽的间隙。在图1和2所示的实施例中，在接触支架6中着陆点9之间的间隙被具有横截面为楔形的壁的中间壁11充分利用。通过该中间壁11中断了发光二极管芯片5之间的直接的可视接触。因此从一个发光二极管芯片5发出的辐射不会被另一个发光二极管芯片5直接吸收。由此元件1的光功率大致等于单个发光二极管芯片5的光功率之和。
由于中间壁11的楔形横截面保证了入射在中间壁11上的光向外反射。中间壁11的高度最好比发光二极管芯片5的高度高25％，优选10％。该高度是从凹处3的底部起测量的。如果中间壁11的高度低于发光二极管芯片5的高度，则发光二极管芯片5之间的照准线未完全中断。反过来，如果中间壁11的高度太大，则中间壁11因楔形壁而要求占据太多空间。因此对中间壁11的高度来说，发光二极管芯片5的射出特性是决定性的。如果发光二极管芯片5主要向下射出，则中间壁11的高度也可以小于发光二极管芯片5的高度。
为了制造元件1，首先接触支架6用一种热塑性塑料或者热固性塑料浇注，然后发光二极管芯片5下降并连结到着陆点9。接着凹处3用一种对发光二极管芯片5来说透明的树脂填充。
应注意到，相同的方法也可以用在接触支架6由一个完全的印刷电路板代替的情况下。在这种情况下，印刷电路板在发光二极管芯片5部位设有一个外壳2，该外壳喷射到印刷电路板上。
图3示出了元件1的另一种实施例的横截面视图。在这种实施例中，首先形成外壳2，然后在外壳2的表面上制造所需的线路12。为此可以采用所谓的CIMID技术。在这种技术中，首先在外壳2的表面上沉积一薄层处于水溶液中的金属层，接着用激光结构化。这样结构化的金属层再用电镀法加厚。采用这种方法的优点是，带有反射金属层的中间壁11也能被覆盖。由此进一步改善了元件1的效率。

Claims (10)

1.带有多个发光二极管芯片(5)的光电子元件，所述发光二极管芯片相邻布置在一个公共的发射器(3)中，其特征在于，在每两个发光二极管芯片(5)之间各设置一个中间壁(11)。
2.按照权利要求1所述的光电子元件，其特征在于，反射器(3)由一个在塑料外壳(2)中的凹处构成。
3.按照权利要求1或2所述的光电子元件，其特征在于，所述中间壁(11)由一个尤其是具有楔形横截面的反射分隔板构成。
4.按照权利要求1至3之一所述的光电子元件，其特征在于，发光二极管芯片(5)设置在一个在反射器(3)的底部或所述凹处的底部上延伸的接触支架(6)上。
5.按照权利要求1至3之一所述的光电子元件，其特征在于，发光二极管芯片(5)固定在形成于反射器(3)上或者形成于外壳(2)的凹处中的线路(12)上。
6.按照权利要求1至5之一所述的光电子元件，其特征在于，反射器(3)用一种对发光二极管芯片(5)的辐射来说透明的合成树脂浇注。
7.按照权利要求1至6之一所述的光电子元件，其特征在于，在反射器(3)中这样布置至少三个发光二极管芯片(5)，它们布置在一个假想的多角形的角点上，在发光二极管芯片(5)之间的中间壁(11)呈星形扩散。
8.按照权利要求1至7之一所述的光电子元件，其特征在于，每两个发光二极管芯片(5)相互之间具有0.5毫米至1毫米的间距，尤其是大约0.8毫米，分别从发光二极管芯片(5)的中心测量。
9.按照权利要求1至8之一所述的光电子元件，其特征在于，中间壁(11)的高度比发光二极管芯片(5)的高度高25％，尤其是10％。
10.按照权利要求2所述的或者按照引用权利要求2的权利要求3至9之一所述的光电子元件，其特征在于，在每两个发光二极管芯片(5)之间的中间壁(11)在塑料外壳(2)上形成。
CN01814562.0A 2000-08-24 2001-08-22 带有多个发光二极管芯片的元件 Pending CN1447984A (zh)

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DE10041686A DE10041686A1 (de) 2000-08-24 2000-08-24 Bauelement mit einer Vielzahl von Lumineszenzdiodenchips
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EP (1) EP1312117A1 (zh)
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DE (1) DE10041686A1 (zh)
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WO2009000104A1 (fr) * 2007-06-25 2008-12-31 Jenshyan Chen Structure de boîtier de led
WO2009000105A1 (en) * 2007-06-25 2008-12-31 Jenshyan Chen A light-emitting diode lighting device
CN104613337A (zh) * 2014-09-23 2015-05-13 深圳市三浦半导体有限公司 一种双色led灯珠及灯组
CN107546310A (zh) * 2016-06-24 2018-01-05 首尔半导体株式会社 发光二极管封装件
CN114334930A (zh) * 2021-12-30 2022-04-12 惠州市艾斯谱光电有限公司 照明灯及其灯板
CN114334930B (zh) * 2021-12-30 2022-09-27 惠州市艾斯谱光电有限公司 照明灯及其灯板

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EP1312117A1 (de) 2003-05-21
JP2004517465A (ja) 2004-06-10
DE10041686A1 (de) 2002-03-14
US7435997B2 (en) 2008-10-14
WO2002017401A1 (de) 2002-02-28
US20040056265A1 (en) 2004-03-25

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