JP6952945B2 - 発光素子パッケージ及び照明装置 - Google Patents
発光素子パッケージ及び照明装置 Download PDFInfo
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- 238000005192 partition Methods 0.000 claims description 66
- 230000008878 coupling Effects 0.000 claims description 33
- 238000010168 coupling process Methods 0.000 claims description 33
- 238000005859 coupling reaction Methods 0.000 claims description 33
- 230000001681 protective effect Effects 0.000 claims description 24
- 125000006850 spacer group Chemical group 0.000 claims description 24
- 230000017525 heat dissipation Effects 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 description 14
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 238000000465 moulding Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 7
- 230000008602 contraction Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000006089 photosensitive glass Substances 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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Description
Claims (4)
- 放熱フレームと、
第1及び第2接触部を有し、前記放熱フレームの一側に配置された第1リードフレームと、
第3及び第4接触部を有し、前記放熱フレームの他側に配置された第2リードフレームと、
前記放熱フレーム、前記第1及び第2リードフレームと結合され、第1キャビティ及び前記第1キャビティから離隔した第2キャビティを有する絶縁性材質の本体と、
前記第1キャビティの底に露出した前記放熱フレームの上に配置された複数の発光素子と、
を含み、
前記本体は、前記第1キャビティ内に配置され、前記複数の発光素子のうち少なくとも1つ以上を取り囲む反射部を含み、
前記反射部は、前記第1キャビティの下部に配置された第1〜第3反射隔壁を含み、
前記第1反射隔壁は、前記第1キャビティの内側面の一側から他側に延長され、
前記第2反射隔壁は、前記第1反射隔壁と対向し、前記第1キャビティの内側面の一側から他側に延長され、
前記第3反射隔壁は、前記第1反射隔壁の中心から前記第2反射隔壁の中心に延長され、
前記第1〜第3反射隔壁の各高さは、前記発光素子の高さ以上であり、前記第1キャビティの内側面の高さ以下であり、
前記第1リードフレームの第1接触部及び第2接触部は、前記第1キャビティの内側面の一側底に露出し、
前記第2リードフレームの第3接触部及び第4接触部は、前記第2キャビティの内側面の他側底に露出し、
前記第1接触部及び前記第3接触部は、前記第1反射隔壁の外側に配置され、
前記第2接触部及び前記第4接触部は、前記第2反射隔壁の外側に配置され、
前記発光素子は、前記第1キャビティ内で、前記第1接触部と前記第3接触部に電気的に連結された第1グループの発光素子と、前記第2接触部と前記第3接触部に電気的に連結された第2グループの発光素子とを含み、
前記本体は、前記第1キャビティの底で前記放熱フレームの上部に配置された第1結合部を含み、
前記第1〜第3反射隔壁は、前記第1結合部の上に配置され、
前記第1結合部は、第1及び第2延長部を含み、
前記第1延長部は、前記第1キャビティの内側面と直接接し、前記反射部の下部両側で相互対向するように配置され、
前記第2延長部は、前記第1延長部から前記第1〜第3反射隔壁の下部内側及び下部外側に延長され、
前記第1延長部は、前記第1及び第2反射隔壁のそれぞれの下部外側に延長され、
前記第1反射隔壁と前記第2反射隔壁は相互平行であり、
前記第1反射隔壁と前記第2反射隔壁との間の一側領域には、前記第1グループの発光素子が配置され、
前記第1反射隔壁と前記第2反射隔壁との間の他側領域には、前記第2グループの発光素子が配置される、発光素子パッケージ。 - 前記第2キャビティの内に配置された保護素子と、
前記第2キャビティの底に延長された前記放熱フレームの一部と、前記第1リードフレームの第5接触部と、前記第2リードフレームの第6接触部とを含み、
前記保護素子は、前記放熱フレームの一部上に配置され、前記第5接触部と前記第2接触部に電気的に連結され、
前記第5接触部は、前記第1リードフレームの第1接触部から延長され、
前記第6接触部は、前記第2リードフレームの第3接触部から延長される、請求項1に記載の発光素子パッケージ。 - 前記放熱フレーム、第1及び第2リードフレームの間には、第1及び第2スペーサーを含み、
前記放熱フレームは、前記本体の外側部に露出する第1突出部と、前記複数の発光素子が配置される実装部及び前記実装部から延長された第1屈曲部とを含み、
前記第1屈曲部は、前記第1突出部より大きい幅を有し、
前記第1リードフレームは、外側部に露出する第2突出部と、前記第1屈曲部方向に対向する第2屈曲部とを含み、
前記第2リードフレームは、外側部に露出する第3突出部と、前記第1屈曲部方向に対向する第3屈曲部とを含み、
前記第2及び第3屈曲部の第1方向に突出した幅は、前記第1及び第2スペーサーの幅より大きく、
前記第2及び第3屈曲部の前記第1方向と直交する第2方向の幅は、前記第1及び第2スペーサーの幅と同一または大きい、請求項1〜2のいずれか一項に記載の発光素子パッケージ。 - 前記第1及び第2リードフレームは前記第1キャビティを中心に相互対称する角に配置された第1及び第2パッドをさらに含み、
前記第1及び第2パッドは、上部が前記本体から露出し、
前記本体は、前記第1パッドの外側に配置された第1保護部及び前記第2パッドの外側に配置された第2保護部を含み、
前記第1保護部は、相互連結され、前記第1パッドの外側と直接接する第3及び第4直線部を含み、
前記第2保護部は、相互連結され、前記第2パッドの外側と直接接する第5及び第6直線部を含み、
前記第1及び第2パッドは、少なくとも1つ以上の貫通孔を含み、
前記第1パッドは、前記第1接触部の外側端部に配置され、
前記第2パッドは、前記第4接触部の外側端部に配置される、請求項1〜3のいずれか一項に記載の発光素子パッケージ。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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KR1020160036096A KR102509053B1 (ko) | 2016-03-25 | 2016-03-25 | 발광소자 패키지 및 조명 장치 |
KR10-2016-0036100 | 2016-03-25 | ||
KR10-2016-0036096 | 2016-03-25 | ||
KR1020160036091A KR102522811B1 (ko) | 2016-03-25 | 2016-03-25 | 발광소자 패키지 및 조명 장치 |
KR10-2016-0036091 | 2016-03-25 | ||
KR1020160036100A KR102522590B1 (ko) | 2016-03-25 | 2016-03-25 | 발광소자 패키지 및 조명 장치 |
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JP2017175132A JP2017175132A (ja) | 2017-09-28 |
JP2017175132A5 JP2017175132A5 (ja) | 2020-04-16 |
JP6952945B2 true JP6952945B2 (ja) | 2021-10-27 |
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CN108027110B (zh) * | 2015-09-01 | 2020-07-10 | Lg 伊诺特有限公司 | 照明装置 |
KR102432024B1 (ko) * | 2017-12-08 | 2022-08-12 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 및 광원 장치 |
JP1627942S (ja) * | 2018-09-27 | 2019-04-01 | ||
USD895559S1 (en) * | 2019-01-15 | 2020-09-08 | Citizen Electronics Co., Ltd. | Light emitting diode |
JP1640278S (ja) * | 2019-01-15 | 2019-09-02 | ||
JP7210305B2 (ja) * | 2019-01-31 | 2023-01-23 | 日機装株式会社 | 流体殺菌装置 |
CN211260395U (zh) * | 2019-09-29 | 2020-08-14 | 漳州立达信光电子科技有限公司 | 一种led灯以及控制电路 |
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JPH0550752U (ja) * | 1991-12-11 | 1993-07-02 | 株式会社精工舎 | 発光装置 |
DE10041686A1 (de) * | 2000-08-24 | 2002-03-14 | Osram Opto Semiconductors Gmbh | Bauelement mit einer Vielzahl von Lumineszenzdiodenchips |
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- 2017-03-22 JP JP2017055275A patent/JP6952945B2/ja active Active
- 2017-03-23 US US15/467,204 patent/US9997683B2/en active Active
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