CN1489224A - 高亮度超薄光半导体器件 - Google Patents

高亮度超薄光半导体器件 Download PDF

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CN1489224A
CN1489224A CNA031341993A CN03134199A CN1489224A CN 1489224 A CN1489224 A CN 1489224A CN A031341993 A CNA031341993 A CN A031341993A CN 03134199 A CN03134199 A CN 03134199A CN 1489224 A CN1489224 A CN 1489224A
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陈洪花
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Abstract

本发明公开了一种高亮度超薄光半导体器件，其主要技术特点是：把面发光芯片(Chip)(A)(InGan/GaN LED Chip)用绝缘透光芯片胶粘剂(E)(UVCure)用胶粘剂，绝缘透明胶粘剂)胶粘于引线框架的Die PAD Cup上，并把从面发光芯片发射的光束中使反方向发射的光束透过绝缘透光环氧树脂胶粘剂后，被反射率高的镀有Ag的Die PAD CUP反射回来，实现向所要发射的方向，发射出更多的光束，所以能够得到更高亮度的超小型、超轻薄型SMD Type的Chip LED光半导体器件。既能使光器件受热冲击带来的应力最小化，而且能使芯片(Chip)LED超薄(Thin Thickness)化。

Description

高亮度超薄光半导体器件
技术领域：
本发明属于半导体技术领域，具体地说是有关超小型(Small Size)、超薄型(Thin Thichness)发光二极管的。更详细讲，它是把InGaN/GaN发光二极管芯片(Chip)直接贴片于镀银的引线框架Die PAD Cup上，充分利用银的反向率，提高超小型封装(Package)LED光亮度的有关封装(Package)结构的发明。
背景技术：
一般来讲，光半导体器件是利用半导体光电转换特性，传递光电信号的产品。光半导体器件区分于象发光二极管将电信号转换为光信号后，向前方发射光的发光器件(350nm-990nm)和接收光信号并转换为电气信号的光敏器件(光敏三极管、光敏二极管、光敏IC等)。这些光半导体器件由形成PN结的参杂物的种类及浓度、PN结结构的不同，可制作由紫外光(UVLight)到可视光(Visual Light)、红外光(Infra Red Light)的各种发光波长的制品。
可视发光二极管是利用P-N结的注入型电致发光特性的发光器件。可视发光二极管发光所需电压非常低，而且使用寿命长，因而广泛应用于固体显示器件及画像显示器件。这些可视光光半导体器件根据其使用领域的不同，封装的外形也不同。代表性产品为用于手机背光灯的表面封装型的超小型发光二极管(Chip LED)及用于电光板、固体显示器件及画像显示用的3Φ、5Φ直立型发光二极管。
下面阐述表面封装型(Surface Mounting Device)的超小型可视光发光二极管器件。发光二极管的结构如图1所示，由芯片(Chip)(A)与金属引线(C)、(D)构成。金属引线的作用是形成回路，并给芯片(Chip)添加电流，而芯片(Chip)加上电流后，会产生发散光。
图中芯片(A)由导电性Ag胶(E2)粘接于在负极引线(C)末端形成的Die PAD(E1)上，同时正极引线(D)及负极引线(C)另一端由金线(Wire)连接，而形成回路。此外，为了从外部环境保护芯片(Chip)，使用透光绝缘环氧树脂(F)进行封装，只是将负极正极引线(C)(D)末端部裸露在外，便于对芯片(Chip)施加电流。
实际应用时，把所要使用的外部电路连接于发光二极管裸露在外的负极(C)和正极引线(D)上，就可以对芯片(Chip)施加电流，来利用发光二极管的发光功能。
封装物(Molding)一般采用透明的环氧树脂，而采用不同的发光二极管芯片(Chip)(A)，可以制造出红色、绿色、蓝色、橙色等不同颜色的发光二极管。
上述具有代表性的表面封装型(Surface Mounting Device)超小型发光二极管器件，一般采用较厚的印刷线路板(PCB基板)，而这些印刷线路板(PCB基板)(J)的耐热性比较低，在生产发光二极管过程中所发生热冲击(Stress)，使印刷线路板(PCB基板)(J)发生热变形，导致PCB与环氧树脂胶粘力减弱，所以此类发光二极管的可靠性难以得到保证。
在采用印刷线路板(PCB基板)的生产中，想保证可靠性，首先，制造工序将变得很复杂，带来制造成本的上升。其次，因使用厚的PCB而无法实现超小型CHIP LED的轻薄化。还有印刷线路板(PCB基板)的光反向率很低，镀在DIE PAD上的金(Gold)的反向率也不好，所以采用面发光芯片(InGaN/GaN系LED CHIP)(390nm-470nm)生产不出光亮度较高的产品。还有这些PCB的基板100％依靠进口，所以原材料的单价高，而且使用贵金属的金(Gold)，所以制造成本也变得昂贵。
还有在手机(Handy Phone)等实际应用中，采用浸焊(Souder Reflow)工序来安装芯片(CHIP)LED光器件，但浸焊(Solder Reflow)工序是在220℃～320℃条件下进行的，而PCB基板的热变形温度是在220℃以内，因此SolderRefolw工序给迄今为止的表面封装型(SMD)超小型发光二极管(Chip LED)器件带来致命的热冲击，使Gold Wire(A1)(A2)与AgEpoxy(E2)从印刷线路板(PCB基板)脱落。因此迄今为止技术的表面封装型(SMD)超小型ChipLED器件，很难保证其寿命。
发明内容：
鉴于上述现有技术存在的不足，本发明的目的是解决迄今为止没能够解决的表面封装超小型发光二极管的问题点。把面发光芯片(InGan/GaN LEDChip)用绝缘透光芯片胶粘剂(E)(UV Cure)用胶粘剂，绝缘透明胶粘剂于引线框架的Die PAD Cup上，而排除使用Ag Epoxy胶粘剂，从而根本解除了正、负极之间的短接现象，而且从结构上把从面发光芯片发射的光束中使反方向发射的光束透过绝缘透光环氧树脂胶粘剂后被反向率高的镀有Ag的DiePAD反射回来，实现向所要发射的方向，发射出更多的光束，所以能够得到更高亮度的芯片(Chip)LED。
本次发明的另外目的是使用厚度比较薄的引线框架，并使引线框架及透光环氧树脂的下端(H)比引线部平面突出10um～50um，然后用贯穿孔(B)(B1)使上端环氧树脂(G)与下端环氧树脂(H)相连，从而能提供热冲击强，又超薄型(Thin Thickness)的芯片(Chip)LED。
本次发明的又一个目的是使器件整机(Set)生产中的浸焊(Set SolderRerlow)工序(220℃～320℃)所受的热冲击应力(Stress)最小化，从而解决迄今为止的表面封装(SMD)超小型发光二极管(Chip LED)在受到致命的热冲击，而发生Gold Wire(A1)(A2)与Ag Epoxy(E2)从印刷线路板(PCB基板)上脱落的问题。为了保证表面封装型(SMD)超小型Chip LED器件的寿命，本发明使用热变形温度为450℃以上的耐热的Lead Frame。
本次发明的再一个目的是解决基板材料成本高的问题。迄今为止使用的印刷线路板(PCB基板)(J)价格很高，DiePAD位上镀有金(Gold)的印刷线路板又是100％依靠进口，所以制造费用很高，而本发明使用的超小型ChipLED器件是使用价格低廉的局部镀Ag的Lead Frame(I)，所以制造成本有了很大的改善。
实现上述目的的超小型、超轻薄型的ChipLED光半导体器件的制作方法如下：
第一工序：排列多个引线框架，并每一个引线框架上涂布绝缘透光环氧树脂粘胶剂(E)
第二工序：引线框架Die PAD的胶粘剂上粘贴光器件芯片(A)
第三工序：引线框架及芯片(Chip)之间用金线(Gold Wire)连接(A1)(A2)，实现回路
第四工序：把引线框架的结构部安装于制模模具后，用透过性环氧树脂(F)封装
第五工序：封装结束的引线框架部粘贴切割(Sawing)胶粘剂后用金刚石刀片(Diamond Blade)一个个切断。
本发明的优点是如上所述，把面发光芯片(InGan/GaN LED Chip)(390nm-470nm)用绝缘透光芯片胶粘剂(E)(UV Vure)用胶粘剂，绝缘透明胶粘剂)胶粘于引线框架的Die PAD Cup上，因此避免了因使用Ag Epoxy胶粘剂(E2)导致的正极(Anode)和负极(Cathode)之间的短路(Short)现象；而且从结构上把从面发光芯片发射的光束中，使反方向的光束，透过绝缘透光环氧树脂胶粘剂后，被反向率高的镀有Ag的Dei Pad(E1)反射回来，实现向所要发射的方向，发射出更多的光束，所以能够提高亮度；还有使用厚度比较薄的引线框架为基板，封装时使引线框架(I)及透光环氧树脂(F)的下端环氧树脂(H)比引线框架(I)的引线底部平面突出10um～50um，并通过正、负极贯穿孔(B1)(B)使上端环氧树脂(G)与下端环氧树脂(H)相连，所以既能使光器件受热冲击带来的应力最小化，而且能使芯片(Chip)LED超薄(Thin Thickness)化；
其次是解决了迄今为止的表面封装(SMD)超小型发光二极管(Chip LED)器件在整机应用中存在的一些问题。
其一是由于整机生产采用浸焊(Sorder Rrfolw)工序，(浸焊(SorderReflow)工序是在220℃～320℃条件下进行的)而浸焊(Sorder Reflow)工序给表面封装型(SMD)超小型发光二极管(Chip LED)器件带来致命的热冲击，使Gold Wire(A1)(A2)与AgEpoxy(E2)从印刷线路板(PCB基板)脱落，但如使用热变形温度为450℃以上的引线框架(Lead Frame)就能使器件在浸焊等热冲击中受到最小的应力，而且能实现超薄化，从而保证光半导体器件在整机应用中的寿命。
其二，迄今为止使用的印刷线路板(PCB基板)(J)价格很高，Die PAD部位上镀有金(Gold)的印刷线路板又是100％依靠国外进口，所以制造费用很高，而本发明使用超小型Chip LED器件是使用价格低的局部镀Ag的LeadFrame(I)，所以制造成本有了很大的改善。
下面结合附图对本发明作以说明。
附图说明：
图1是现有超小型光半导体器件的结构示意图；
图2是本发明结构示意图。
具体实施方式：
如图2所示，本发明的超小型、超轻薄型的Chip LED光半导体器件的是由正极引线框架(Anode Lead Frame)(D)、负极引线框架((Dathode LeadFramd)(C)、正，负极引线框架(D)(C)及发光芯片(A)之间通电用的金线(A1)(A2)、封装上述两个引线框架(D)(C)部分的透光环氧树脂(F)、Lead下端部形成的10～50um突出的下端环氧树脂(H)和连接Lead Frame，CathodeLead及下端环氧树脂(H)和上端环氧树脂(G)的正极引线贯穿孔(B1)、负极引线贯穿孔(B2)构成。

Claims (3)

1、一种高亮度超薄光半导体器件，其特征是：把面发光芯片(Chip)(A)(InGan/GaN LED Chip)用绝缘透光芯片胶粘剂(E)(UV Cure)用胶粘剂，绝缘透明胶粘剂)胶粘于引线框架的Die PAD Cup上，并把从面发光芯片发射的光束中使反方向发射的光束透过绝缘透光环氧树脂胶粘剂后，被反射率高的镀有Ag的Die PAD CUP反射回来，实现向所要发射的方向，发射出更多的光束，所以能够得到更高亮度的超小型、超轻薄型SMD Type的Chip LED光半导体器件。
2、如权利要求1所述的高亮度超薄光半导体器件，其特征是：由光反向率高，热变形温度450℃以上的镀有Ag的引线框架来代替迄今为止的印刷线路板(PCB基板)(J)而制造出的表面封装型芯片(Chip)LED光半导体器件。
3、如权利要求1所述的高亮度超薄光半导体器件，其特征是：用透光环氧树脂封装时使引线框架(I)及透光环氧树脂(F)的下端环氧树脂(H)比引线框架(I)的引线部平面突出10um～50um，并通过正、负极贯穿孔(B1)(B)使上端环氧树脂(G)与下端环氧树脂(H)连接。从而使光器件受热冲击带来的应力最小化，并实现芯片(Chip)LED光半导体器件的超薄型(ThinThickness)化。
CNA031341993A 2003-09-02 2003-09-02 高亮度超薄光半导体器件 Pending CN1489224A (zh)

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CN101902877A (zh) * 2010-06-08 2010-12-01 深圳市瑞丰光电子股份有限公司 一种pcb板、晶片型led及led照明装置
CN101452904B (zh) * 2007-12-03 2013-05-08 日立电线精密株式会社 引线框架及其制造方法和受光发光装置
CN105810656A (zh) * 2014-12-31 2016-07-27 无锡华润安盛科技有限公司 一种上引线框结构
CN107210350A (zh) * 2014-11-18 2017-09-26 Psi株式会社 用于水平排列组件的超小型发光二极管元件、其制造方法及包括其的水平排列组件
CN107256859A (zh) * 2016-03-25 2017-10-17 Lg 伊诺特有限公司 发光器件封装
JP2018067731A (ja) * 2011-02-16 2018-04-26 ローム株式会社 Ｌｅｄモジュール

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101452904B (zh) * 2007-12-03 2013-05-08 日立电线精密株式会社 引线框架及其制造方法和受光发光装置
CN101902877A (zh) * 2010-06-08 2010-12-01 深圳市瑞丰光电子股份有限公司 一种pcb板、晶片型led及led照明装置
JP2018067731A (ja) * 2011-02-16 2018-04-26 ローム株式会社 Ｌｅｄモジュール
JP2019186583A (ja) * 2011-02-16 2019-10-24 ローム株式会社 発光装置
CN107210350A (zh) * 2014-11-18 2017-09-26 Psi株式会社 用于水平排列组件的超小型发光二极管元件、其制造方法及包括其的水平排列组件
CN107210350B (zh) * 2014-11-18 2019-10-08 三星显示有限公司 用于水平排列组件的超小型发光二极管元件、其制造方法及包括其的水平排列组件
CN105810656A (zh) * 2014-12-31 2016-07-27 无锡华润安盛科技有限公司 一种上引线框结构
CN107256859A (zh) * 2016-03-25 2017-10-17 Lg 伊诺特有限公司 发光器件封装

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