CN1348553A - 薄膜上形成图案的方法 - Google Patents

薄膜上形成图案的方法 Download PDF

Info

Publication number
CN1348553A
CN1348553A CN99816473A CN99816473A CN1348553A CN 1348553 A CN1348553 A CN 1348553A CN 99816473 A CN99816473 A CN 99816473A CN 99816473 A CN99816473 A CN 99816473A CN 1348553 A CN1348553 A CN 1348553A
Authority
CN
China
Prior art keywords
coating
substrate
interface
metal
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN99816473A
Other languages
English (en)
Chinese (zh)
Inventor
D·P·奥布瑞恩
J·M·芙罗克扎克
R·L·史密森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN1348553A publication Critical patent/CN1348553A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/262—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used recording or marking of inorganic surfaces or materials, e.g. glass, metal, or ceramics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with infrared radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0911—Anamorphotic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0025—Devices or apparatus characterised by means for coating the developer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3014—Imagewise removal using liquid means combined with ultrasonic means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Laser Beam Processing (AREA)
CN99816473A 1999-01-14 1999-12-13 薄膜上形成图案的方法 Pending CN1348553A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/231,428 1999-01-14
US09/231,428 US6203952B1 (en) 1999-01-14 1999-01-14 Imaged article on polymeric substrate

Publications (1)

Publication Number Publication Date
CN1348553A true CN1348553A (zh) 2002-05-08

Family

ID=22869210

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99816473A Pending CN1348553A (zh) 1999-01-14 1999-12-13 薄膜上形成图案的方法

Country Status (7)

Country Link
US (2) US6203952B1 (enExample)
EP (1) EP1141776B1 (enExample)
JP (1) JP2002535701A (enExample)
KR (1) KR20010112240A (enExample)
CN (1) CN1348553A (enExample)
DE (1) DE69940959D1 (enExample)
WO (1) WO2000042472A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7413940B2 (en) 2006-05-18 2008-08-19 Au Optronics Corp. Thin-film transistor and fabrication method thereof
CN104159699A (zh) * 2012-03-05 2014-11-19 法国圣戈班玻璃厂 用于制造带有传感器窗的复合玻璃板的方法
CN105829970A (zh) * 2013-10-30 2016-08-03 荷兰应用自然科学研究组织Tno 包括电路图案的基底、用于提供包括电路图案的基底的方法及系统
CN106425108A (zh) * 2016-09-06 2017-02-22 深圳华工激光设备有限公司 Rfid标签天线的激光刻蚀方法及系统
CN111945115A (zh) * 2019-05-17 2020-11-17 常州星宇车灯股份有限公司 一种车灯零件表面膜的处理方法

Families Citing this family (129)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US7494816B2 (en) 1997-12-22 2009-02-24 Roche Diagnostic Operations, Inc. System and method for determining a temperature during analyte measurement
US8071384B2 (en) 1997-12-22 2011-12-06 Roche Diagnostics Operations, Inc. Control and calibration solutions and methods for their use
US7407811B2 (en) 1997-12-22 2008-08-05 Roche Diagnostics Operations, Inc. System and method for analyte measurement using AC excitation
US7390667B2 (en) 1997-12-22 2008-06-24 Roche Diagnostics Operations, Inc. System and method for analyte measurement using AC phase angle measurements
JP2000263840A (ja) * 1999-03-11 2000-09-26 Hitachi Ltd レーザ印字方法及びレーザ印字装置
JP3751772B2 (ja) * 1999-08-16 2006-03-01 日本電気株式会社 半導体薄膜製造装置
ATE242589T1 (de) * 1999-09-30 2003-06-15 Siemens Ag Verfahren und einrichtung zum laserbohren von organischen materialien
US6645359B1 (en) * 2000-10-06 2003-11-11 Roche Diagnostics Corporation Biosensor
US7073246B2 (en) 1999-10-04 2006-07-11 Roche Diagnostics Operations, Inc. Method of making a biosensor
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
WO2001090849A2 (en) 2000-05-22 2001-11-29 Avery Dennison Corporation Trackable files and systems for using the same
WO2002031869A2 (en) * 2000-10-10 2002-04-18 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
US6540890B1 (en) * 2000-11-01 2003-04-01 Roche Diagnostics Corporation Biosensor
AU2002235144A1 (en) * 2000-11-27 2002-06-03 The Trustees Of Columbia University In The City Of New York Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate
DE10121126A1 (de) 2001-04-30 2002-11-07 Intec Holding Gmbh Identifikationsträger und Verfahren zu dessen Herstellung
WO2002089338A2 (en) 2001-04-30 2002-11-07 Bnc Ip Switzerland Gmbh Selective metal removal process for metallized retro-reflective and holographic films and radio frequency devices made therewith
TW556350B (en) * 2001-08-27 2003-10-01 Univ Columbia A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
US6814844B2 (en) 2001-08-29 2004-11-09 Roche Diagnostics Corporation Biosensor with code pattern
DE10212639A1 (de) * 2002-03-21 2003-10-16 Siemens Ag Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen
WO2003084688A2 (en) * 2002-04-01 2003-10-16 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
AU2003255949A1 (en) 2002-07-09 2004-01-23 Neology, Inc. System and method for providing secure identification solutions
KR101058464B1 (ko) * 2002-08-19 2011-08-24 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 기판상의 필름영역과 그 에지영역에서의 실질적인 균일성을제공하기 위한 필름영역의 레이저 결정 가공을 위한 방법과 시스템 및 그 필름영역을 가진 구조물
KR101131040B1 (ko) * 2002-08-19 2012-03-30 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에지 영역을 최소화하도록 기판 상의 박막 영역을 레이저결정화 처리하는 방법 및 시스템, 그리고 그러한 박막 영역의 구조
JP4879486B2 (ja) * 2002-08-19 2012-02-22 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上のフィルム領域をレーザ結晶化処理してほぼ均一にするプロセス及びシステム、及びこのフィルム領域の構造
KR20050047103A (ko) * 2002-08-19 2005-05-19 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 다양한 조사 패턴을 포함하는 원 샷 반도체 가공 시스템 및방법
US7338820B2 (en) * 2002-12-19 2008-03-04 3M Innovative Properties Company Laser patterning of encapsulated organic light emitting diodes
KR101191837B1 (ko) * 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
ES2675787T3 (es) 2003-06-20 2018-07-12 F. Hoffmann-La Roche Ag Método y reactivo para producir tiras reactivas estrechas y homogéneas
US8206565B2 (en) 2003-06-20 2012-06-26 Roche Diagnostics Operation, Inc. System and method for coding information on a biosensor test strip
US7488601B2 (en) 2003-06-20 2009-02-10 Roche Diagnostic Operations, Inc. System and method for determining an abused sensor during analyte measurement
US7597793B2 (en) 2003-06-20 2009-10-06 Roche Operations Ltd. System and method for analyte measurement employing maximum dosing time delay
US7645373B2 (en) 2003-06-20 2010-01-12 Roche Diagnostic Operations, Inc. System and method for coding information on a biosensor test strip
US8058077B2 (en) 2003-06-20 2011-11-15 Roche Diagnostics Operations, Inc. Method for coding information on a biosensor test strip
US8148164B2 (en) 2003-06-20 2012-04-03 Roche Diagnostics Operations, Inc. System and method for determining the concentration of an analyte in a sample fluid
US7718439B2 (en) 2003-06-20 2010-05-18 Roche Diagnostics Operations, Inc. System and method for coding information on a biosensor test strip
US7604721B2 (en) 2003-06-20 2009-10-20 Roche Diagnostics Operations, Inc. System and method for coding information on a biosensor test strip
US7452457B2 (en) 2003-06-20 2008-11-18 Roche Diagnostics Operations, Inc. System and method for analyte measurement using dose sufficiency electrodes
US7645421B2 (en) 2003-06-20 2010-01-12 Roche Diagnostics Operations, Inc. System and method for coding information on a biosensor test strip
JP2005022956A (ja) * 2003-07-02 2005-01-27 Rohm & Haas Electronic Materials Llc セラミックの金属化
US7161552B2 (en) * 2003-08-08 2007-01-09 Lockheed Martin Corporation Electromagnetic interference protection for radomes
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
CA2553632A1 (en) 2004-02-06 2005-08-25 Bayer Healthcare Llc Oxidizable species as an internal reference for biosensors and method of use
DE102004006414B4 (de) * 2004-02-09 2008-08-21 Lpkf Laser & Elektronika D.O.O. Verfahren zum partiellen Lösen einer leitfähigen Schicht
US7255782B2 (en) * 2004-04-30 2007-08-14 Kenneth Crouse Selective catalytic activation of non-conductive substrates
US7569126B2 (en) 2004-06-18 2009-08-04 Roche Diagnostics Operations, Inc. System and method for quality assurance of a biosensor test strip
US7556723B2 (en) 2004-06-18 2009-07-07 Roche Diagnostics Operations, Inc. Electrode design for biosensor
KR100784497B1 (ko) * 2004-10-06 2007-12-11 삼성전자주식회사 반도체 패키지용 필름기판 및 그 제조방법
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US7417550B2 (en) * 2004-12-20 2008-08-26 3M Innovative Properties Company Environmentally friendly radio frequency identification (RFID) labels and methods of using such labels
US8182871B2 (en) * 2005-02-16 2012-05-22 3M Innovative Properties Company Method of making topographically patterned coatings
CN101119809A (zh) * 2005-02-16 2008-02-06 3M创新有限公司 制造形态学图案涂层的方法
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP5030470B2 (ja) * 2005-05-31 2012-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7651932B2 (en) 2005-05-31 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing antenna and method for manufacturing semiconductor device
US20060269687A1 (en) * 2005-05-31 2006-11-30 Federal-Mogul World Wide, Inc. Selective area fusing of a slurry coating using a laser
GB0511132D0 (en) * 2005-06-01 2005-07-06 Plastic Logic Ltd Layer-selective laser ablation patterning
EP1913374B1 (en) 2005-07-20 2019-01-09 Ascensia Diabetes Care Holdings AG Method for signalling the user to add additional sample to a test strip, method for measuring the temperature of a sample and methods for determining the concentration of an analyte based on gated amperometry
US20070040688A1 (en) * 2005-08-16 2007-02-22 X-Cyte, Inc., A California Corporation RFID inlays and methods of their manufacture
KR101368570B1 (ko) * 2005-08-16 2014-02-27 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막의 고수율 결정화
US7176053B1 (en) * 2005-08-16 2007-02-13 Organicid, Inc. Laser ablation method for fabricating high performance organic devices
US7411500B2 (en) * 2005-09-14 2008-08-12 3M Innovative Properties Company Methods of monitoring items or material from manufacturing processes
EP3483598B1 (en) 2005-09-30 2024-11-06 Ascensia Diabetes Care Holdings AG Gated voltammetry
US7510985B1 (en) 2005-10-26 2009-03-31 Lpkf Laser & Electronics Ag Method to manufacture high-precision RFID straps and RFID antennas using a laser
JP2009518864A (ja) * 2005-12-05 2009-05-07 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 膜を加工するためのシステム及び方法並びに薄膜
US20070130754A1 (en) * 2005-12-14 2007-06-14 Michael Fein Laser ablation prototyping of RFID antennas
US20070138153A1 (en) * 2005-12-20 2007-06-21 Redman Dean E Wide web laser ablation
US20070210420A1 (en) * 2006-03-11 2007-09-13 Nelson Curt L Laser delamination of thin metal film using sacrificial polymer layer
US20070241966A1 (en) * 2006-04-14 2007-10-18 Yung-Shun Chen Conductive antenna structure and method for making the same
JP5110830B2 (ja) * 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20080083706A1 (en) * 2006-10-05 2008-04-10 Mu-Gahat Enterprises, Llc Reverse side film laser circuit etching
US7633035B2 (en) * 2006-10-05 2009-12-15 Mu-Gahat Holdings Inc. Reverse side film laser circuit etching
US20080151951A1 (en) * 2006-12-22 2008-06-26 Elliott David J Laser optical system
US20090323739A1 (en) * 2006-12-22 2009-12-31 Uv Tech Systems Laser optical system
US7812779B2 (en) * 2007-02-06 2010-10-12 Incom Corporation RFID transceiver sensitivity focusing system
US20080216304A1 (en) * 2007-03-06 2008-09-11 Chien Ming Lin Method of manufacturing antenna module by laser carving
KR100812264B1 (ko) * 2007-04-04 2008-03-10 영남대학교 산학협력단 초음파 가공기를 이용한 작업물의 가공방법
US20090004368A1 (en) * 2007-06-29 2009-01-01 Weyerhaeuser Co. Systems and methods for curing a deposited layer on a substrate
US7804450B2 (en) 2007-07-20 2010-09-28 Laird Technologies, Inc. Hybrid antenna structure
US20090061251A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by additive deposition
US20090061112A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by subtractive deposition
DE102008039660A1 (de) * 2007-09-06 2009-03-12 Heidelberger Druckmaschinen Ag Bedruckstoff bearbeitende Maschine und Verfahren in einer Bedruckstoff bearbeitenden Maschine
US8614471B2 (en) * 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
US8415670B2 (en) 2007-09-25 2013-04-09 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US7666567B2 (en) * 2007-10-23 2010-02-23 E. I. Du Pont De Nemours And Company Negative imaging method for providing a patterned metal layer having high conductivity
CN103354204A (zh) * 2007-11-21 2013-10-16 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009076302A1 (en) 2007-12-10 2009-06-18 Bayer Healthcare Llc Control markers for auto-detection of control solution and methods of use
EP2248155A4 (en) * 2008-02-29 2011-10-05 Univ Columbia FLASH LIGHT-RECOGNIZED FOR THIN FILMS
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR20100132020A (ko) * 2008-02-29 2010-12-16 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 균일한 결정질 ｓｉ 막들을 제조하는 리소그래피 방법
US8463116B2 (en) 2008-07-01 2013-06-11 Tap Development Limited Liability Company Systems for curing deposited material using feedback control
DE102008048342B4 (de) * 2008-09-22 2013-01-24 Laser-Laboratorium Göttingen eV SERS-Substrat, Verfahren zu seiner Herstellung und Verfahren zum Detektieren eines Analyten mittels SERS
EP2351067A4 (en) 2008-11-14 2013-07-03 Univ Columbia SYSTEMS AND METHOD FOR CRYSTALLIZING THIN FILMS
EP3644100A1 (en) * 2009-03-19 2020-04-29 Viavi Solutions Inc. Patterning of a spacer layer in an interference filter
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) * 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US8267494B2 (en) * 2009-12-09 2012-09-18 Hand Held Products, Inc. Automatic RFID circuit tuning
DE102010019406B4 (de) 2010-05-04 2012-06-21 Lpkf Laser & Electronics Ag Verfahren zum partiellen Lösen einer definierten Fläche einer leitfähigen Schicht
DE102010019407B4 (de) 2010-05-04 2013-06-27 Lpkf Laser & Electronics Ag Verfahren zum Einbringen elektrischer Isolierungen in Leiterplatten
EP2652837A4 (en) 2010-12-16 2014-07-30 3M Innovative Properties Co TRANSPARENT MICROSTRUCTURED RFID ANTENNA AND ITEMS INCLUDING THIS
US8593727B2 (en) * 2011-04-25 2013-11-26 Vladimir G. Kozlov Single-shot laser ablation of a metal film on a polymer membrane
AT512200A1 (de) * 2011-11-30 2013-06-15 Ait Austrian Inst Technology Verfahren zur aufnahme eines zeilenbilds
DE102012101104A1 (de) * 2012-02-10 2013-08-14 Schreiner Group Gmbh & Co. Kg Transponderetikett und Herstellungsverfahren für ein Transponderetikett
US20140054065A1 (en) * 2012-08-21 2014-02-27 Abner D. Joseph Electrical circuit trace manufacturing for electro-chemical sensors
WO2014050421A1 (ja) * 2012-09-25 2014-04-03 東レ株式会社 配線パターンの形成方法および配線パターン形成物
US10211443B2 (en) 2014-09-10 2019-02-19 Cellink Corporation Battery interconnects
US10049510B2 (en) 2015-09-14 2018-08-14 Neology, Inc. Embedded on-board diagnostic (OBD) device for a vehicle
WO2018088853A1 (ko) 2016-11-11 2018-05-17 주식회사 엘지화학 대면적 액정 소자의 패턴 형성 방법
CN111096089B (zh) 2017-07-13 2023-11-17 塞林克公司 互连电路方法和器件
WO2020092334A2 (en) 2018-10-29 2020-05-07 Cellink Corporation Flexible hybrid interconnect circuits
US11490523B2 (en) * 2019-09-20 2022-11-01 Manaflex, Llc Reel-to-reel laser ablation methods and devices in FPC fabrication
KR20230074582A (ko) 2020-10-02 2023-05-30 셀링크 코포레이션 가요성 상호 연결 회로에 대한 연결 형성
KR20230079161A (ko) 2020-10-02 2023-06-05 셀링크 코포레이션 가요성 상호접속 회로를 연결하기 위한 방법 및 시스템
KR20230160239A (ko) 2021-03-24 2023-11-23 셀링크 코포레이션 다층 가요성 배터리 인터커넥트 및 이의 제조 방법
EP4442087A1 (en) 2022-02-22 2024-10-09 Cellink Corporation Flexible interconnect circuits and methods of fabrication thereof
US11950377B1 (en) 2022-04-15 2024-04-02 Cellink Corporation Flexible interconnect circuits for battery packs
US12362437B2 (en) 2023-11-13 2025-07-15 Cellink Corporation Multilayered flexible interconnect circuits for battery assemblies and methods of fabricating and installing thereof

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087281A (en) 1975-09-19 1978-05-02 Rca Corporation Method of producing optical image on chromium or aluminum film with high-energy light beam
US4415239A (en) 1980-10-31 1983-11-15 Humphrey Instruments, Inc. Reflection rejection spherical optical train composed of tipped lens elements
JPS597948A (ja) 1982-07-06 1984-01-17 Asahi Chem Ind Co Ltd 画像形成方法
US5059454A (en) 1989-04-26 1991-10-22 Flex Products, Inc. Method for making patterned thin film
US5173441A (en) 1991-02-08 1992-12-22 Micron Technology, Inc. Laser ablation deposition process for semiconductor manufacture
US5303084A (en) 1991-08-27 1994-04-12 Kaman Aerospace Corporation Laser light beam homogenizer and imaging lidar system incorporating same
EP0685333A2 (en) 1992-06-05 1995-12-06 Agfa-Gevaert N.V. A heat mode recording material and method for producing driographic printing plates
US5438402A (en) 1993-03-05 1995-08-01 Trustees Of Dartmouth College System and method for measuring the interface tensile strength of planar interfaces
US5461212A (en) 1993-06-04 1995-10-24 Summit Technology, Inc. Astigmatic laser ablation of surfaces
DE69402268T2 (de) * 1993-07-30 1997-07-10 Eastman Kodak Co Infrarot absorbierende Cyaninfarbstoffe für die Laserablativabbildung
DE69407620T2 (de) 1993-12-17 1998-04-09 Minnesota Mining & Mfg Ablationsabbildung durch quasikontaktlithographie
JP2760288B2 (ja) * 1993-12-28 1998-05-28 日本電気株式会社 ビアホール形成法及びフィルム切断法
US5418541A (en) 1994-04-08 1995-05-23 Schroeder Development Planar, phased array antenna
JPH08334894A (ja) * 1995-02-17 1996-12-17 Konica Corp 画像形成材料及びそれを用いる画像形成方法
JPH0915849A (ja) * 1995-02-17 1997-01-17 Konica Corp 画像形成材料とその形成方法及びそれを用いる画像形成方法
US5691103A (en) 1995-02-17 1997-11-25 Konica Corporation Image forming material, method of preparing the same and image forming method employing the same
JPH08337053A (ja) * 1995-02-17 1996-12-24 Konica Corp 画像形成材料、それを用いる画像形成方法および画像記録体
CA2176625C (en) 1995-05-19 2008-07-15 Donald Harold Fergusen Radio frequency identification tag
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JP3301054B2 (ja) 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JPH1028012A (ja) 1996-07-12 1998-01-27 Harada Ind Co Ltd 平面アンテナ
JPH1071776A (ja) * 1996-08-30 1998-03-17 Mitsubishi Chem Corp ダイレクト感光性平版印刷版
EP0936506A3 (en) 1998-02-11 1999-12-08 E.I. Du Pont De Nemours And Company Dry process for the development and stripping of photoresists

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7413940B2 (en) 2006-05-18 2008-08-19 Au Optronics Corp. Thin-film transistor and fabrication method thereof
US7679088B2 (en) 2006-05-18 2010-03-16 Au Optronics Corp. Thin-film transistor and fabrication method thereof
CN104159699A (zh) * 2012-03-05 2014-11-19 法国圣戈班玻璃厂 用于制造带有传感器窗的复合玻璃板的方法
CN104159699B (zh) * 2012-03-05 2017-03-08 法国圣戈班玻璃厂 用于制造带有传感器窗的复合玻璃板的方法
CN105829970A (zh) * 2013-10-30 2016-08-03 荷兰应用自然科学研究组织Tno 包括电路图案的基底、用于提供包括电路图案的基底的方法及系统
CN105829970B (zh) * 2013-10-30 2020-07-14 荷兰应用自然科学研究组织Tno 包括电路图案的基底、用于提供包括电路图案的基底的方法及系统
CN106425108A (zh) * 2016-09-06 2017-02-22 深圳华工激光设备有限公司 Rfid标签天线的激光刻蚀方法及系统
CN106425108B (zh) * 2016-09-06 2019-08-23 深圳华工激光设备有限公司 Rfid标签天线的激光刻蚀方法及系统
CN111945115A (zh) * 2019-05-17 2020-11-17 常州星宇车灯股份有限公司 一种车灯零件表面膜的处理方法

Also Published As

Publication number Publication date
DE69940959D1 (enExample) 2009-07-16
JP2002535701A (ja) 2002-10-22
EP1141776B1 (en) 2009-06-03
US6399258B2 (en) 2002-06-04
US6203952B1 (en) 2001-03-20
US20010006766A1 (en) 2001-07-05
WO2000042472A1 (en) 2000-07-20
EP1141776A1 (en) 2001-10-10
KR20010112240A (ko) 2001-12-20

Similar Documents

Publication Publication Date Title
CN1348553A (zh) 薄膜上形成图案的方法
JP5816409B2 (ja) レーザビア穴あけのためのスループットを高める方法
KR900006586B1 (ko) 레이저 스크라이빙 장치와 방법
JP4551086B2 (ja) レーザーによる部分加工
US7423237B2 (en) Method of cutting laminated glass with laser beams
US8598051B2 (en) Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
CN1328002C (zh) 加工对象物切割方法
KR20010095011A (ko) 마이크로 캐비티 홀의 배열을 만들기 위해 레이저 펄스를사용하는 장치 및 방법
EP1365880A1 (en) Ultraviolet laser ablative patterning of microstructures in semiconductors
JPH0555749A (ja) 多層配線回路基板の製造方法及び誘電体ミラーマスクの製造方法
JP3118203B2 (ja) レーザ加工方法
JP3479761B2 (ja) 透明薄膜除去装置、透明薄膜除去方法および薄膜エレクトロルミネッセント素子
JP3259156B2 (ja) 回路基板の表面処理方法
Karnakis et al. High power DPSS laser micromachining of silicon and stainless steel
JP2000202664A (ja) レ―ザ穴あけ加工方法
EP3539773B1 (en) Method of forming petterns for a large area liquid crystal device
JP2004306127A (ja) 薄膜パターニング加工方法
Lee et al. Femtosecond laser patterning of Ta0. 1W0. 9Ox/ITO thin film stack
JP2003285183A (ja) レーザ加工装置及び加工方法
JPH0372364A (ja) スクリーン印刷用版の製造方法
WO2023052549A2 (en) Cutting a substrate or preparing a substrate for cleaving
JPH08112682A (ja) 光加工方法
KR100555613B1 (ko) 투명 도전막 패터닝 장치 및 이를 이용한 투명 도전막패터닝 방법
JP2808220B2 (ja) 光照射装置
JPH0356557B2 (enExample)

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication