DE69940959D1 - - Google Patents

Info

Publication number
DE69940959D1
DE69940959D1 DE69940959T DE69940959T DE69940959D1 DE 69940959 D1 DE69940959 D1 DE 69940959D1 DE 69940959 T DE69940959 T DE 69940959T DE 69940959 T DE69940959 T DE 69940959T DE 69940959 D1 DE69940959 D1 DE 69940959D1
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69940959T
Inventor
Dennis P O'brien
Jeffrey M Florczak
Robert L Smithson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of DE69940959D1 publication Critical patent/DE69940959D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/262—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used recording or marking of inorganic surfaces or materials, e.g. glass, metal, or ceramics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with infrared radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0911—Anamorphotic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0025—Devices or apparatus characterised by means for coating the developer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3014—Imagewise removal using liquid means combined with ultrasonic means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Laser Beam Processing (AREA)
DE69940959T 1999-01-14 1999-12-13 Expired - Fee Related DE69940959D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/231,428 US6203952B1 (en) 1999-01-14 1999-01-14 Imaged article on polymeric substrate
PCT/US1999/029447 WO2000042472A1 (en) 1999-01-14 1999-12-13 Method for patterning thin films

Publications (1)

Publication Number Publication Date
DE69940959D1 true DE69940959D1 (de) 2009-07-16

Family

ID=22869210

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940959T Expired - Fee Related DE69940959D1 (de) 1999-01-14 1999-12-13

Country Status (7)

Country Link
US (2) US6203952B1 (de)
EP (1) EP1141776B1 (de)
JP (1) JP2002535701A (de)
KR (1) KR20010112240A (de)
CN (1) CN1348553A (de)
DE (1) DE69940959D1 (de)
WO (1) WO2000042472A1 (de)

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US8071384B2 (en) 1997-12-22 2011-12-06 Roche Diagnostics Operations, Inc. Control and calibration solutions and methods for their use
JP2000263840A (ja) * 1999-03-11 2000-09-26 Hitachi Ltd レーザ印字方法及びレーザ印字装置
JP3751772B2 (ja) * 1999-08-16 2006-03-01 日本電気株式会社 半導体薄膜製造装置
JP2003511241A (ja) * 1999-09-30 2003-03-25 シーメンス アクチエンゲゼルシヤフト 有機材料をレーザー穿孔するための方法及び装置
US7073246B2 (en) * 1999-10-04 2006-07-11 Roche Diagnostics Operations, Inc. Method of making a biosensor
US6645359B1 (en) * 2000-10-06 2003-11-11 Roche Diagnostics Corporation Biosensor
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
US7113095B2 (en) 2000-05-22 2006-09-26 Avery Dennison Corp. Trackable files and systems for using the same
CA2389607A1 (en) * 2000-10-10 2002-04-18 The Trustees Of Columbia University Method and apparatus for processing thin metal layers
US6540890B1 (en) * 2000-11-01 2003-04-01 Roche Diagnostics Corporation Biosensor
KR100873927B1 (ko) * 2000-11-27 2008-12-12 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 기판상의 반도체막 영역의 레이저 결정화 처리를 위한 공정 및 마스크 투영 시스템
MXPA03009959A (es) 2001-04-30 2005-07-01 Neology Inc Proceso de extraccion selectiva de metal para peliculas holograficas y retrorreflectoras metalizadas y dispositivos de radiofrecuencia hechos con ellas.
DE10121126A1 (de) 2001-04-30 2002-11-07 Intec Holding Gmbh Identifikationsträger und Verfahren zu dessen Herstellung
WO2003018882A1 (en) * 2001-08-27 2003-03-06 The Trustees Of Columbia University In The City Of New York Improved polycrystalline tft uniformity through microstructure mis-alignment
US6814844B2 (en) * 2001-08-29 2004-11-09 Roche Diagnostics Corporation Biosensor with code pattern
DE10212639A1 (de) * 2002-03-21 2003-10-16 Siemens Ag Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen
AU2003220611A1 (en) * 2002-04-01 2003-10-20 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
EP2273422B1 (de) 2002-07-09 2017-11-01 Neology, Inc. System und Verfahren zur gesicherten Identifizierung
TWI325157B (en) * 2002-08-19 2010-05-21 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions
CN100336941C (zh) * 2002-08-19 2007-09-12 纽约市哥伦比亚大学托管会 改进衬底上薄膜区域内诸区及其边缘区内均一性以及这种薄膜区域之结构的激光结晶处理工艺与系统
US7622370B2 (en) * 2002-08-19 2009-11-24 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions
TWI331803B (en) 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
US7338820B2 (en) * 2002-12-19 2008-03-04 3M Innovative Properties Company Laser patterning of encapsulated organic light emitting diodes
KR101191837B1 (ko) * 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
US7452457B2 (en) 2003-06-20 2008-11-18 Roche Diagnostics Operations, Inc. System and method for analyte measurement using dose sufficiency electrodes
US8148164B2 (en) 2003-06-20 2012-04-03 Roche Diagnostics Operations, Inc. System and method for determining the concentration of an analyte in a sample fluid
US7488601B2 (en) 2003-06-20 2009-02-10 Roche Diagnostic Operations, Inc. System and method for determining an abused sensor during analyte measurement
US8058077B2 (en) 2003-06-20 2011-11-15 Roche Diagnostics Operations, Inc. Method for coding information on a biosensor test strip
EP1642117B1 (de) 2003-06-20 2018-06-13 Roche Diabetes Care GmbH Reagenzstreife für teststreifen
US8206565B2 (en) 2003-06-20 2012-06-26 Roche Diagnostics Operation, Inc. System and method for coding information on a biosensor test strip
US7718439B2 (en) 2003-06-20 2010-05-18 Roche Diagnostics Operations, Inc. System and method for coding information on a biosensor test strip
US7645373B2 (en) 2003-06-20 2010-01-12 Roche Diagnostic Operations, Inc. System and method for coding information on a biosensor test strip
US7645421B2 (en) 2003-06-20 2010-01-12 Roche Diagnostics Operations, Inc. System and method for coding information on a biosensor test strip
JP2005022956A (ja) * 2003-07-02 2005-01-27 Rohm & Haas Electronic Materials Llc セラミックの金属化
US7161552B2 (en) * 2003-08-08 2007-01-09 Lockheed Martin Corporation Electromagnetic interference protection for radomes
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
TWI359441B (en) 2003-09-16 2012-03-01 Univ Columbia Processes and systems for laser crystallization pr
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
EP1713926B1 (de) 2004-02-06 2012-08-01 Bayer HealthCare, LLC Oxidierbare verbindungen als interne referenz in biosensoren und deren verwendung
DE102004006414B4 (de) * 2004-02-09 2008-08-21 Lpkf Laser & Elektronika D.O.O. Verfahren zum partiellen Lösen einer leitfähigen Schicht
US7255782B2 (en) * 2004-04-30 2007-08-14 Kenneth Crouse Selective catalytic activation of non-conductive substrates
US7569126B2 (en) 2004-06-18 2009-08-04 Roche Diagnostics Operations, Inc. System and method for quality assurance of a biosensor test strip
KR100784497B1 (ko) * 2004-10-06 2007-12-11 삼성전자주식회사 반도체 패키지용 필름기판 및 그 제조방법
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US7417550B2 (en) * 2004-12-20 2008-08-26 3M Innovative Properties Company Environmentally friendly radio frequency identification (RFID) labels and methods of using such labels
WO2006088804A1 (en) * 2005-02-16 2006-08-24 3M Innovative Properties Company Method of making morphologically patterned coatings
US8182871B2 (en) * 2005-02-16 2012-05-22 3M Innovative Properties Company Method of making topographically patterned coatings
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
US7651932B2 (en) 2005-05-31 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing antenna and method for manufacturing semiconductor device
JP5030470B2 (ja) * 2005-05-31 2012-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20060269687A1 (en) * 2005-05-31 2006-11-30 Federal-Mogul World Wide, Inc. Selective area fusing of a slurry coating using a laser
GB0511132D0 (en) * 2005-06-01 2005-07-06 Plastic Logic Ltd Layer-selective laser ablation patterning
KR101503072B1 (ko) 2005-07-20 2015-03-16 바이엘 헬스케어 엘엘씨 게이트형 전류 측정법
US7176053B1 (en) * 2005-08-16 2007-02-13 Organicid, Inc. Laser ablation method for fabricating high performance organic devices
US20090218577A1 (en) * 2005-08-16 2009-09-03 Im James S High throughput crystallization of thin films
US20070040688A1 (en) * 2005-08-16 2007-02-22 X-Cyte, Inc., A California Corporation RFID inlays and methods of their manufacture
US7411500B2 (en) * 2005-09-14 2008-08-12 3M Innovative Properties Company Methods of monitoring items or material from manufacturing processes
KR20130100022A (ko) 2005-09-30 2013-09-06 바이엘 헬스케어 엘엘씨 게이트형 전압 전류 측정 분석물 결정 방법
US7510985B1 (en) 2005-10-26 2009-03-31 Lpkf Laser & Electronics Ag Method to manufacture high-precision RFID straps and RFID antennas using a laser
TW200733240A (en) * 2005-12-05 2007-09-01 Univ Columbia Systems and methods for processing a film, and thin films
US20070130754A1 (en) * 2005-12-14 2007-06-14 Michael Fein Laser ablation prototyping of RFID antennas
US20070138153A1 (en) * 2005-12-20 2007-06-21 Redman Dean E Wide web laser ablation
US20070210420A1 (en) * 2006-03-11 2007-09-13 Nelson Curt L Laser delamination of thin metal film using sacrificial polymer layer
US20070241966A1 (en) * 2006-04-14 2007-10-18 Yung-Shun Chen Conductive antenna structure and method for making the same
TWI275184B (en) 2006-05-18 2007-03-01 Au Optronics Corp Thin film transistor and fabrication method thereof
JP5110830B2 (ja) * 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7633035B2 (en) * 2006-10-05 2009-12-15 Mu-Gahat Holdings Inc. Reverse side film laser circuit etching
US20080083706A1 (en) * 2006-10-05 2008-04-10 Mu-Gahat Enterprises, Llc Reverse side film laser circuit etching
US20080151951A1 (en) * 2006-12-22 2008-06-26 Elliott David J Laser optical system
US20090323739A1 (en) * 2006-12-22 2009-12-31 Uv Tech Systems Laser optical system
US7812779B2 (en) * 2007-02-06 2010-10-12 Incom Corporation RFID transceiver sensitivity focusing system
US20080216304A1 (en) * 2007-03-06 2008-09-11 Chien Ming Lin Method of manufacturing antenna module by laser carving
KR100812264B1 (ko) * 2007-04-04 2008-03-10 영남대학교 산학협력단 초음파 가공기를 이용한 작업물의 가공방법
US20090004368A1 (en) * 2007-06-29 2009-01-01 Weyerhaeuser Co. Systems and methods for curing a deposited layer on a substrate
US7804450B2 (en) 2007-07-20 2010-09-28 Laird Technologies, Inc. Hybrid antenna structure
US20090061251A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by additive deposition
US20090061112A1 (en) * 2007-08-27 2009-03-05 Mu-Gahat Enterprises, Llc Laser circuit etching by subtractive deposition
DE102008039660A1 (de) * 2007-09-06 2009-03-12 Heidelberger Druckmaschinen Ag Bedruckstoff bearbeitende Maschine und Verfahren in einer Bedruckstoff bearbeitenden Maschine
WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
TWI418037B (zh) 2007-09-25 2013-12-01 Univ Columbia 藉由改變形狀、大小或雷射光束在製造於橫向結晶化薄膜上之薄膜電晶體元件中產生高一致性的方法
US7666567B2 (en) * 2007-10-23 2010-02-23 E. I. Du Pont De Nemours And Company Negative imaging method for providing a patterned metal layer having high conductivity
JP5443377B2 (ja) * 2007-11-21 2014-03-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エピタキシャルに配向された厚膜を調製するための調製システムおよび方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009076302A1 (en) 2007-12-10 2009-06-18 Bayer Healthcare Llc Control markers for auto-detection of control solution and methods of use
WO2009111326A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash light annealing for thin films
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR20100132020A (ko) * 2008-02-29 2010-12-16 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 균일한 결정질 ｓｉ 막들을 제조하는 리소그래피 방법
US8463116B2 (en) 2008-07-01 2013-06-11 Tap Development Limited Liability Company Systems for curing deposited material using feedback control
DE102008048342B4 (de) * 2008-09-22 2013-01-24 Laser-Laboratorium Göttingen eV SERS-Substrat, Verfahren zu seiner Herstellung und Verfahren zum Detektieren eines Analyten mittels SERS
US8802580B2 (en) 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
EP3644100A1 (de) * 2009-03-19 2020-04-29 Viavi Solutions Inc. Musterung einer abstandsschicht in einem interferenzfilter
US8440581B2 (en) * 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8267494B2 (en) * 2009-12-09 2012-09-18 Hand Held Products, Inc. Automatic RFID circuit tuning
DE102010019406B4 (de) 2010-05-04 2012-06-21 Lpkf Laser & Electronics Ag Verfahren zum partiellen Lösen einer definierten Fläche einer leitfähigen Schicht
DE102010019407B4 (de) 2010-05-04 2013-06-27 Lpkf Laser & Electronics Ag Verfahren zum Einbringen elektrischer Isolierungen in Leiterplatten
WO2012082300A1 (en) 2010-12-16 2012-06-21 3M Innovative Properties Company Transparent micropatterned rfid antenna and articles incorporating same
US8593727B2 (en) * 2011-04-25 2013-11-26 Vladimir G. Kozlov Single-shot laser ablation of a metal film on a polymer membrane
AT512200A1 (de) * 2011-11-30 2013-06-15 Ait Austrian Inst Technology Verfahren zur aufnahme eines zeilenbilds
DE102012101104A1 (de) * 2012-02-10 2013-08-14 Schreiner Group Gmbh & Co. Kg Transponderetikett und Herstellungsverfahren für ein Transponderetikett
PT2822728T (pt) * 2012-03-05 2018-11-21 Saint Gobain Processo para a produção de um painel de vidro laminado com janela de sensor
US20140054065A1 (en) * 2012-08-21 2014-02-27 Abner D. Joseph Electrical circuit trace manufacturing for electro-chemical sensors
JPWO2014050421A1 (ja) * 2012-09-25 2016-08-22 東レ株式会社 配線パターンの形成方法および配線パターン形成物
KR102307014B1 (ko) * 2013-10-30 2021-10-01 네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오 전기 회로 패턴을 포함하는 기판, 그를 제공하기 위한 방법 및 시스템
US10211443B2 (en) 2014-09-10 2019-02-19 Cellink Corporation Battery interconnects
US10049510B2 (en) 2015-09-14 2018-08-14 Neology, Inc. Embedded on-board diagnostic (OBD) device for a vehicle
CN106425108B (zh) * 2016-09-06 2019-08-23 深圳华工激光设备有限公司 Rfid标签天线的激光刻蚀方法及系统
CN109922962B (zh) 2016-11-11 2021-04-27 株式会社Lg化学 大面积液晶装置的图案的形成方法
US11116070B2 (en) 2017-07-13 2021-09-07 Cellink Corporation Interconnect circuit methods and devices
CN111945115A (zh) * 2019-05-17 2020-11-17 常州星宇车灯股份有限公司 一种车灯零件表面膜的处理方法
US11026333B2 (en) * 2019-09-20 2021-06-01 Manaflex, Llc Reel-to-reel laser sintering methods and devices in FPC fabrication
KR20230079161A (ko) 2020-10-02 2023-06-05 셀링크 코포레이션 가요성 상호접속 회로를 연결하기 위한 방법 및 시스템
WO2022072886A1 (en) 2020-10-02 2022-04-07 Cellink Corporation Forming connections to flexible interconnect circuits
EP4256647A1 (de) 2021-03-24 2023-10-11 CelLink Corporation Mehrschichtige flexible batterieverbindungen und verfahren zur herstellung davon
US11751328B1 (en) 2022-02-22 2023-09-05 Cellink Corporation Flexible interconnect circuits and methods of fabrication thereof
US11950377B1 (en) 2022-04-15 2024-04-02 Cellink Corporation Flexible interconnect circuits for battery packs

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087281A (en) * 1975-09-19 1978-05-02 Rca Corporation Method of producing optical image on chromium or aluminum film with high-energy light beam
US4415239A (en) 1980-10-31 1983-11-15 Humphrey Instruments, Inc. Reflection rejection spherical optical train composed of tipped lens elements
JPS597948A (ja) 1982-07-06 1984-01-17 Asahi Chem Ind Co Ltd 画像形成方法
US5059454A (en) 1989-04-26 1991-10-22 Flex Products, Inc. Method for making patterned thin film
US5173441A (en) 1991-02-08 1992-12-22 Micron Technology, Inc. Laser ablation deposition process for semiconductor manufacture
US5303084A (en) 1991-08-27 1994-04-12 Kaman Aerospace Corporation Laser light beam homogenizer and imaging lidar system incorporating same
EP0685333A2 (de) 1992-06-05 1995-12-06 Agfa-Gevaert N.V. Im Wärmeverfahren arbeitendes Aufzeichnungsmaterial und Verfahren zur Herstellung von Druckplatten, welche kein Anfeuchtwasser benötigen
US5438402A (en) 1993-03-05 1995-08-01 Trustees Of Dartmouth College System and method for measuring the interface tensile strength of planar interfaces
US5461212A (en) 1993-06-04 1995-10-24 Summit Technology, Inc. Astigmatic laser ablation of surfaces
DE69402268T2 (de) * 1993-07-30 1997-07-10 Eastman Kodak Co Infrarot absorbierende Cyaninfarbstoffe für die Laserablativabbildung
CN1057731C (zh) 1993-12-17 2000-10-25 美国3M公司 一种利用高功率源在工件上烧蚀成象的方法
JP2760288B2 (ja) * 1993-12-28 1998-05-28 日本電気株式会社 ビアホール形成法及びフィルム切断法
US5418541A (en) 1994-04-08 1995-05-23 Schroeder Development Planar, phased array antenna
US5691103A (en) 1995-02-17 1997-11-25 Konica Corporation Image forming material, method of preparing the same and image forming method employing the same
JPH08337053A (ja) * 1995-02-17 1996-12-24 Konica Corp 画像形成材料、それを用いる画像形成方法および画像記録体
JPH0915849A (ja) * 1995-02-17 1997-01-17 Konica Corp 画像形成材料とその形成方法及びそれを用いる画像形成方法
JPH08334894A (ja) * 1995-02-17 1996-12-17 Konica Corp 画像形成材料及びそれを用いる画像形成方法
CA2176625C (en) 1995-05-19 2008-07-15 Donald Harold Fergusen Radio frequency identification tag
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JP3301054B2 (ja) 1996-02-13 2002-07-15 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JPH1028012A (ja) 1996-07-12 1998-01-27 Harada Ind Co Ltd 平面アンテナ
JPH1071776A (ja) * 1996-08-30 1998-03-17 Mitsubishi Chem Corp ダイレクト感光性平版印刷版
EP0936506A3 (de) 1998-02-11 1999-12-08 E.I. Du Pont De Nemours And Company Trockenverfahren zum Entwickeln und Entschichten von Photoresists

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