CN1347932A - 多孔材料 - Google Patents
多孔材料 Download PDFInfo
- Publication number
- CN1347932A CN1347932A CN01117235A CN01117235A CN1347932A CN 1347932 A CN1347932 A CN 1347932A CN 01117235 A CN01117235 A CN 01117235A CN 01117235 A CN01117235 A CN 01117235A CN 1347932 A CN1347932 A CN 1347932A
- Authority
- CN
- China
- Prior art keywords
- poly
- methyl
- silane
- vinyl
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011148 porous material Substances 0.000 title description 18
- 239000003989 dielectric material Substances 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 140
- 229910052710 silicon Inorganic materials 0.000 claims description 134
- 239000010703 silicon Substances 0.000 claims description 134
- 239000000178 monomer Substances 0.000 claims description 103
- 239000000203 mixture Substances 0.000 claims description 82
- 239000011159 matrix material Substances 0.000 claims description 75
- -1 vinyl oxygen trimethyl silane Chemical compound 0.000 claims description 43
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 29
- 125000000217 alkyl group Chemical group 0.000 claims description 28
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 25
- 229920001451 polypropylene glycol Polymers 0.000 claims description 25
- 229920000233 poly(alkylene oxides) Polymers 0.000 claims description 21
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims description 19
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 17
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- LDHQCZJRKDOVOX-UHFFFAOYSA-N 2-butenoic acid Chemical compound CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 claims description 16
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims description 16
- 150000002148 esters Chemical class 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 14
- DNIAPMSPPWPWGF-UHFFFAOYSA-N propylene glycol Substances CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 14
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229920001223 polyethylene glycol Polymers 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 229920002554 vinyl polymer Polymers 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 150000005846 sugar alcohols Polymers 0.000 claims description 10
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 9
- XXZKONADBULBJB-UHFFFAOYSA-N COC(C=C)=O.C1(=CC=CC=C1)OC1=CC=CC=C1 Chemical compound COC(C=C)=O.C1(=CC=CC=C1)OC1=CC=CC=C1 XXZKONADBULBJB-UHFFFAOYSA-N 0.000 claims description 8
- 229920006037 cross link polymer Polymers 0.000 claims description 8
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- 239000005977 Ethylene Substances 0.000 claims description 6
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- VFHBYYOTBGDCSX-UHFFFAOYSA-N C(=C)[SiH2]C=C.C1(=CC=CC=C1)C1=CC=CC=C1 Chemical compound C(=C)[SiH2]C=C.C1(=CC=CC=C1)C1=CC=CC=C1 VFHBYYOTBGDCSX-UHFFFAOYSA-N 0.000 claims description 5
- PNCUGKUBQZIJKN-UHFFFAOYSA-N NC[Si](C=C)(C=C)C1=CC=CC=C1 Chemical compound NC[Si](C=C)(C=C)C1=CC=CC=C1 PNCUGKUBQZIJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- QRHCILLLMDEFSD-UHFFFAOYSA-N bis(ethenyl)-dimethylsilane Chemical compound C=C[Si](C)(C)C=C QRHCILLLMDEFSD-UHFFFAOYSA-N 0.000 claims description 5
- YQOTVKVZLFHCKW-UHFFFAOYSA-N bis(ethenyl)-methylsilane Chemical compound C=C[SiH](C)C=C YQOTVKVZLFHCKW-UHFFFAOYSA-N 0.000 claims description 5
- WJNKEHHLMRWLMC-UHFFFAOYSA-N bis(ethenyl)-phenylsilane Chemical compound C=C[SiH](C=C)C1=CC=CC=C1 WJNKEHHLMRWLMC-UHFFFAOYSA-N 0.000 claims description 5
- PMSZNCMIJVNSPB-UHFFFAOYSA-N bis(ethenyl)silicon Chemical compound C=C[Si]C=C PMSZNCMIJVNSPB-UHFFFAOYSA-N 0.000 claims description 5
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 5
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 claims description 5
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 claims description 5
- 125000003107 substituted aryl group Chemical group 0.000 claims description 5
- PKRKCDBTXBGLKV-UHFFFAOYSA-N tris(ethenyl)-methylsilane Chemical compound C=C[Si](C)(C=C)C=C PKRKCDBTXBGLKV-UHFFFAOYSA-N 0.000 claims description 5
- BNCOGDMUGQWFQE-UHFFFAOYSA-N tris(ethenyl)silicon Chemical compound C=C[Si](C=C)C=C BNCOGDMUGQWFQE-UHFFFAOYSA-N 0.000 claims description 5
- DDJYSYJBTTYOBJ-UHFFFAOYSA-N CC=1C=C(C=C(C1)C)[SiH2]C=C Chemical class CC=1C=C(C=C(C1)C)[SiH2]C=C DDJYSYJBTTYOBJ-UHFFFAOYSA-N 0.000 claims description 4
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 4
- 239000004305 biphenyl Substances 0.000 claims description 4
- 235000010290 biphenyl Nutrition 0.000 claims description 4
- 238000004049 embossing Methods 0.000 claims description 4
- HBWGDHDXAMFADB-UHFFFAOYSA-N ethenyl(triethyl)silane Chemical class CC[Si](CC)(CC)C=C HBWGDHDXAMFADB-UHFFFAOYSA-N 0.000 claims description 4
- OVOIHGSHJGMSMZ-UHFFFAOYSA-N ethenyl(triphenyl)silane Chemical class C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=C)C1=CC=CC=C1 OVOIHGSHJGMSMZ-UHFFFAOYSA-N 0.000 claims description 4
- BAVNDESSHRPRRF-UHFFFAOYSA-N ethenyl-diethyl-methylsilane Chemical class CC[Si](C)(CC)C=C BAVNDESSHRPRRF-UHFFFAOYSA-N 0.000 claims description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 4
- ZGYICYBLPGRURT-UHFFFAOYSA-N tri(propan-2-yl)silicon Chemical compound CC(C)[Si](C(C)C)C(C)C ZGYICYBLPGRURT-UHFFFAOYSA-N 0.000 claims description 4
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 claims description 4
- HYWCXWRMUZYRPH-UHFFFAOYSA-N trimethyl(prop-2-enyl)silane Chemical compound C[Si](C)(C)CC=C HYWCXWRMUZYRPH-UHFFFAOYSA-N 0.000 claims description 4
- AKQNYQDSIDKVJZ-UHFFFAOYSA-N triphenylsilane Chemical compound C1=CC=CC=C1[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 claims description 4
- IHCLUFSKPOJGDC-UHFFFAOYSA-N 1-ethoxy-2-methylprop-1-ene Chemical compound CCOC=C(C)C IHCLUFSKPOJGDC-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- HXLVDKGPVGFXTH-UHFFFAOYSA-N butyl(dimethyl)silane Chemical group CCCC[SiH](C)C HXLVDKGPVGFXTH-UHFFFAOYSA-N 0.000 claims 3
- MNMVKGDEKPPREK-UHFFFAOYSA-N trimethyl(prop-2-enoxy)silane Chemical compound C[Si](C)(C)OCC=C MNMVKGDEKPPREK-UHFFFAOYSA-N 0.000 claims 3
- GUSQYBRZWHTZGT-UHFFFAOYSA-N hex-1-enylsilane Chemical compound CCCCC=C[SiH3] GUSQYBRZWHTZGT-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 125000000962 organic group Chemical group 0.000 abstract 3
- 239000000463 material Substances 0.000 description 37
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 23
- 241001093575 Alma Species 0.000 description 21
- 239000000126 substance Substances 0.000 description 20
- 229920000642 polymer Polymers 0.000 description 18
- 239000000243 solution Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000002904 solvent Substances 0.000 description 12
- 125000005907 alkyl ester group Chemical group 0.000 description 10
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 9
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 9
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 9
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 7
- 125000005250 alkyl acrylate group Chemical group 0.000 description 7
- YPHQUSNPXDGUHL-UHFFFAOYSA-N n-methylprop-2-enamide Chemical compound CNC(=O)C=C YPHQUSNPXDGUHL-UHFFFAOYSA-N 0.000 description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 6
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000003545 alkoxy group Chemical group 0.000 description 6
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- DOMLXBPXLNDFAB-UHFFFAOYSA-N ethoxyethane;methyl prop-2-enoate Chemical compound CCOCC.COC(=O)C=C DOMLXBPXLNDFAB-UHFFFAOYSA-N 0.000 description 5
- 238000006068 polycondensation reaction Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 4
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 3
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 3
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- 235000019504 cigarettes Nutrition 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000010616 electrical installation Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 235000019439 ethyl acetate Nutrition 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229920001519 homopolymer Polymers 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- LZCLXQDLBQLTDK-UHFFFAOYSA-N lactic acid ethyl ester Natural products CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 description 2
- 125000006528 (C2-C6) alkyl group Chemical group 0.000 description 2
- ZMARGGQEAJXRFP-UHFFFAOYSA-N 1-hydroxypropan-2-yl 2-methylprop-2-enoate Chemical compound OCC(C)OC(=O)C(C)=C ZMARGGQEAJXRFP-UHFFFAOYSA-N 0.000 description 2
- UXYMHGCNVRUGNO-UHFFFAOYSA-N 1-hydroxypropan-2-yl prop-2-enoate Chemical compound OCC(C)OC(=O)C=C UXYMHGCNVRUGNO-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 2
- COCLLEMEIJQBAG-UHFFFAOYSA-N 8-methylnonyl 2-methylprop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C(C)=C COCLLEMEIJQBAG-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 102100026735 Coagulation factor VIII Human genes 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
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- UUORTJUPDJJXST-UHFFFAOYSA-N n-(2-hydroxyethyl)prop-2-enamide Chemical compound OCCNC(=O)C=C UUORTJUPDJJXST-UHFFFAOYSA-N 0.000 description 1
- OMNKZBIFPJNNIO-UHFFFAOYSA-N n-(2-methyl-4-oxopentan-2-yl)prop-2-enamide Chemical compound CC(=O)CC(C)(C)NC(=O)C=C OMNKZBIFPJNNIO-UHFFFAOYSA-N 0.000 description 1
- DCBBWYIVFRLKCD-UHFFFAOYSA-N n-[2-(dimethylamino)ethyl]-2-methylprop-2-enamide Chemical compound CN(C)CCNC(=O)C(C)=C DCBBWYIVFRLKCD-UHFFFAOYSA-N 0.000 description 1
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- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- YGPZXPHFJSYIKP-UHFFFAOYSA-N nonadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCCOC(=O)C(C)=C YGPZXPHFJSYIKP-UHFFFAOYSA-N 0.000 description 1
- LYJZNXAVZMEXDH-UHFFFAOYSA-N octadecan-8-yl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCC(OC(=O)C(C)=C)CCCCCCC LYJZNXAVZMEXDH-UHFFFAOYSA-N 0.000 description 1
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- ULDDEWDFUNBUCM-UHFFFAOYSA-N pentyl prop-2-enoate Chemical compound CCCCCOC(=O)C=C ULDDEWDFUNBUCM-UHFFFAOYSA-N 0.000 description 1
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- 239000003361 porogen Substances 0.000 description 1
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- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- JPSIUEJLDNCSHS-UHFFFAOYSA-N propane;prop-2-enoic acid Chemical compound CCC.OC(=O)C=C JPSIUEJLDNCSHS-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
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- 230000009257 reactivity Effects 0.000 description 1
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- 150000004756 silanes Chemical class 0.000 description 1
- 229960004029 silicic acid Drugs 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- ATZHWSYYKQKSSY-UHFFFAOYSA-N tetradecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCOC(=O)C(C)=C ATZHWSYYKQKSSY-UHFFFAOYSA-N 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- AKRQMTFHUVDMIL-UHFFFAOYSA-N tetrakis(prop-2-enyl)silane Chemical compound C=CC[Si](CC=C)(CC=C)CC=C AKRQMTFHUVDMIL-UHFFFAOYSA-N 0.000 description 1
- OIUCPPFBFOLPIO-UHFFFAOYSA-N tetratriacontyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCOC(=O)C(C)=C OIUCPPFBFOLPIO-UHFFFAOYSA-N 0.000 description 1
- 125000002769 thiazolinyl group Chemical group 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- KEROTHRUZYBWCY-UHFFFAOYSA-N tridecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCOC(=O)C(C)=C KEROTHRUZYBWCY-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical class C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- UWAWYGLUQDYLTK-UHFFFAOYSA-N trimethylsilylmethyl prop-2-enoate Chemical compound C[Si](C)(C)COC(=O)C=C UWAWYGLUQDYLTK-UHFFFAOYSA-N 0.000 description 1
- KRLHYNPADOCLAJ-UHFFFAOYSA-N undecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCOC(=O)C(C)=C KRLHYNPADOCLAJ-UHFFFAOYSA-N 0.000 description 1
- 229940117958 vinyl acetate Drugs 0.000 description 1
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- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/22—After-treatment of expandable particles; Forming foamed products
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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Abstract
揭示一种用于电子器件制造中所用的具有低介电常数的多孔有机多硅介电材料以及该多孔有机多硅介电材料的制备方法。还揭示了形成含有这种多孔以及聚硅氧烷介电材料的集成电路的方法。
Description
本发明涉及一种多孔材料。尤其是,本发明涉及含有有机多硅材料和低介电常数的多孔薄膜的制备和用途。
由于电器装置越来越小,因此在电器工业中总是希望提高电器元件,例如集成电路、电路板、多芯片模块、芯片测试装置,等的电路密度而不降低电性能,例如串音或电容耦合,并且还希望提高这些元件中的信号传播速度。实现这些目标的一种方法是降低元件中所用界面,或金属互化、绝缘材料的介电常数。降低这种界面或金属互化,绝缘材料的介电常数的方法是在绝缘薄膜之间掺入很小的,均匀分布的细孔或孔隙。
多孔介电基质材料是本领域公知的。一种公知的制造多孔介电材料的方法包括共聚合易热变单体和介电单体形成嵌段共聚物,接着加热分解易热变单体单元。例如,参见美国专利5776990。在此方法中,将易热变单体单元的量限制在低于大约30%体积。如果使用30%体积以上的易热变单体,则所得的介电材料就会有圆柱形或层状区域而不是细孔或孔隙,这将导致在排除,即加热分解易热变单体单元时互联或瓦解结构。例如,参见Carter等人PolyimideNanofoams from Phase-Separated Block Copolymers,ElectrochemicalSociety Proceedings,Volume 97-8,Page 32-43(1997)。因此嵌段共聚物方法在基质材料的介电常数方面仅提供有限的降低。
另一种制备多孔介电材料的公知方法是在介电前体中分散热可排除颗粒,聚合该介电前体而基本上不排除该颗粒,接着通过加热基本上排除该颗粒,并且,如果需要,完成介电材料的固化。例如参见美国专利5700844。在’844专利中,可实现0.5-20微米的均匀细孔尺寸。然而此方法不适于这种电器装置如集成电路,其特性尺寸要求低于0.25微米。
共同未决的美国专利申请09/460326(Allen等人)揭示多孔体(porogen)颗粒,其基本上与B-步骤介电基质材料相容。然而此专利申请没有概括地教导如何制备含有有机多硅材料的多孔介电层。
美国专利5895263(Cater等人)揭示了一种制造含有有机多硅多孔介电层的集成电路装置的方法。在该专利中,通过掺入可分解聚合物制备多孔有机多硅层。揭示了可分解聚合物的长目录,其中包括交联,不可分解的纳米球状体。该’263专利没有揭示如何制备这种纳米球状体也没有揭示如何使这种纳米球状体与有机多硅介电材料相容。
制备多孔介电材料的其它方法是已知的,但是其缺点是微孔尺寸分布广,微孔尺寸太大,例如大于20微米,或该技术对于商业应用太昂贵,例如在超临界条件下的液体提取。
因此需要改进用于电器元件中的,尤其是用于集成电路制造中作为界面层,或金属互化的具有基本上较小微孔尺寸和较高微孔体积比率的多孔有机多硅介电基质材料。
已经惊奇地发现掺入到有机多硅介电基质中的某些聚合物颗粒(或多孔体)可使多孔薄膜具有用作电器装置例如集成电路和印刷电路板中的绝缘材料的适宜的介电常数和足够小的微孔尺寸。这种聚合物材料可使有机多硅基质材料具有比可买到的已知多孔体s更高体积百分比的微孔。
第一方面,本发明涉及一种制备多孔有机多硅介电材料的方法,包括以下步骤:a)在半熔阶段有机多硅介电材料中分散可除去的交联聚合物多孔体;b)固化半熔阶段有机多硅介电材料形成有机多硅介电基质材料而基本上不破坏多孔体;和c)使有机多硅介电基质材料经受这样的条件,即至少部分除去多孔体形成多孔有机多硅介电材料而基本上不破坏有机多硅介电材料,其中多孔体与半熔阶段有机多硅介电材料基本上相容而且其中多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物和一种或多种交联剂。
在第二方面,本发明涉及由上述方法制备的有机多硅介电基质材料。
在第三方面,本发明涉及制备集成电路的方法,包括以下步骤:a)在基质上沉积一组合物层,该组合物包括半熔阶段有机多硅介电材料及分散在其中的交联聚合物多孔体;b)固化半熔阶段有机多硅介电材料形成有机多硅介电基质材料而基本上不除去多孔体;和c)使有机多硅介电基质材料经受这样的条件,即至少部分除去多孔体形成多孔有机多硅介电材料层而基本上不破坏有机多硅介电材料;d)在有机多硅介电层上压花;e)在压花的有机多硅介电层上沉积金属膜;和f)展平该膜形成集成电路;其中多孔体与半熔阶段有机多硅介电材料基本相容而且其中多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物和一种或多种交联剂。
在第四方面,本发明涉及一种由上述方法制备的集成电路。
在第五方面,本发明涉及一种包括半熔阶段有机多硅介电材料和交联聚合的多孔体组合物,其中多孔体与半熔阶段有机多硅介电材料基本相容而且其中多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物和一种或多种交联剂。
在贯穿此说明书中使用的以下缩写具有如下含义,除非该内容清楚地另有说明:“℃=摄氏度;um=微米;UV=紫外线;rpm=转/分钟;nm=纳米;g=克;wt%=重量%;L=升;mL=毫升;RI=折光指数;MIAK=甲基异戊基酮;MIBK=甲基异丁基酮;PMA=聚(甲基丙烯酸酯);CyHMA=甲基丙烯酸环己酯;EG=乙二醇;DPG=二丙二醇;DEA=二乙二醇乙基醚乙酸酯;BzA=丙烯酸卞酯;BzMa=甲基丙烯酸卞基酯;MAPS=MATS=(三甲氧基甲硅烷基)甲基丙烯酸丙酯;PETTA=季戊四醇四/三乙酸酯;PPG4000DMA=聚丙二醇4000丙烯酸二甲酯;DPEPA=二季戊四醇丙烯酸戊酯;TMSMA=三甲基甲硅烷基丙烯酸甲酯;MOPTSOMS=甲基丙烯酸羟丙基双(三甲基甲硅烷氧基)甲基硅烷;MOPMDMOS=3-甲基丙烯酸羟丙基甲基二甲氧基硅烷;TAT=三烯丙基-1,3,5-三吖嗪-2,4,6-(1H,3H,5H)-三酮;IBOMA=异冰片基丙烯酸甲酯;PGMEA=丙二醇一甲基醚乙酸酯;和PGDMA=丙二醇丙烯酸二甲酯;PPODMMST=聚(氧化丙烯),双(二甲氧基甲基甲硅烷基);TMOPTMA=三甲醇丙烷丙烯酸三甲酯;TMOPTA=三甲醇丙烷三丙烯酸酯;BPEPDMS=双聚醚聚二甲基硅烷;PPGMEA260=具有分子量为大约260的聚(丙二醇)甲基醚丙烯酸酯;PPGMEA475=具有分子量为大约475的聚(丙二醇)甲基醚丙烯酸酯;PEGMEMA475=具有分子量为大约475的聚(乙二醇)甲基醚丙烯酸酯;VTMS=乙烯基三甲基硅烷;和VTMOS=乙烯基三甲氧基硅烷。
术语“(甲基)丙烯酸”包括丙烯酸和甲基丙烯酸,术语“(甲基)丙烯酸酯”包括丙烯酸酯和甲基丙烯酸酯。同样,术语“(甲基)丙烯酰胺”指的是丙烯酰胺和甲基丙烯酰胺。“烷基”包括直链、支链和环烷基。术语“多孔体”指的是微孔形成材料,即聚合材料或分散在介电材料中的颗粒,其随后被除去产生微孔,孔隙或介电材料中的空体积。这样,术语“可除去的多孔体”,“可除去的聚合物”和“可除去的颗粒”在整个说明书中可以互换使用。术语“微孔”,“孔隙”和“空体积”在整个说明书中互换使用。“交联剂”和“交联助剂”在整个说明书中互换使用。“聚合物”指的是聚合物和低聚物。术语“聚合物”还包括均聚物和共聚物。术语“低聚物”和“低聚的”指的是二聚物、三聚物、四聚物等等。“单体”指的是能被聚合的任何乙烯基或丙烯酸基不饱和化合物。这种单体可含有一个或多个双键或三键。
术语“半熔阶段”是指未固化的有机多硅介电基质材料.“未固化”意指任何可被聚合或固化,例如缩聚,形成较高分子量材料,例如涂层或薄膜的有机多硅材料。这种半熔阶段材料可以是单体、低聚物或其混合物。半熔阶段材料进一步包括聚合物材料与单体、低聚物或单体和低聚物的混合物。
“卤素”是指氟、氯、溴和碘。类似地,“卤化”是指氟化、氯化、溴化和碘化。除非另有说明,所有的量都是百分重量,所有的比率都是重量比。所有的数值范围都是包括在内的和可以结合的。
本发明涉及用作可除去多孔体的聚合物颗料,即微孔形成材料的合成、组合物、尺寸、分布和纯度。这种多孔体用于电器和光电装置生产中形成多孔有机多硅介电材料。
因此本发明涉及一种制备多孔有机多硅介电材料的方法。该方法包括以下步骤:a)在半熔阶段有机多硅介电材料中分散可除去的交联聚合物多孔体;b)固化半熔阶段有机多硅介电材料形成有机多硅介电基质材料而基本上不破坏多孔体;c)使有机多硅介电基质材料经受这样的条件,即至少部分除去多孔体形成多孔有机多硅介电材料而基本上不破坏有机多硅介电材料,其中多孔体与半熔阶段有机多硅介电材料基本上相容而且其中多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物和一种或多种交联剂。优选的是,当有机多硅是甲基硅倍半氧烷和多孔体包括甲基丙烯酸(三甲氧基甲硅烷基)丙基酯作为聚合单元时,多孔体进一步包括作为聚合单元的至少另一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物。
本发明的多孔体用于降低有机多硅介电材料,尤其是具有低介电常数(“K”)的那些材料的介电常数。低K介电材料是指介电常数低于4的任何材料。半熔阶段有机多硅(或有机硅氧烷)是指包括硅、碳、氧和氢原子的化合物,并具有如下分子式:
((RR1SiO)a(R2SiO1.5)b(R3SiO1.5)c(SiO2)d)n其中R、R1、R2和R3独立地选自氢、(C1-C6)烷基、芳基和被取代芳基;a、c和d独立地选自0-1的数值;b是0.2-1的数值;n是大约3-大约10000的整数;条件是a+b+c+d=1;且条件是至少R,R1和R2之一不是氢。“被取代的芳基”是指芳基的一个或多个氢被另一取代基代暬,例如氰基、羟基、巯基、卤、(C1-C6)烷基、(C1-C6)烷氧基、等等。在上述分子式中,a、b、c和d表示每一组份的摩尔比。该摩尔比可在0和1之间变化。优选的是a是0-大约0.8。还优选的是c是0-大约0.8。进一步优选的是d是0-大约0.8。在上述分子式中n是指半熔阶段材料中的重复单元。优选的是,n是大约3-大约1000的整数。显然,在固化步骤之前,半熔阶段有机多硅介电基质材料可以包括一或多个羟基或烷氧基封端或侧链官能基。这种封端或侧链官能基对本领域熟练人员是公知的。
适宜的有机多硅介电基质材料包括,但不限于,倍半氧化硅烷,尤其是缩聚的卤化硅烷或烷氧基硅烷,例如通过控制水解局部缩聚的四乙氧基硅烷,其数均分子量大约为500-20000,有机改性的硅酸酯,其具有RSiO3或R2SiO2的组合物,其中R是有机取代基,和局部缩聚的原硅酸酯,其具有Si(OR)4作为单体单元。倍半氧化硅烷是RSiO1.5型聚合硅酸酯材料,其中R是有机取代基、适宜的倍半氧化硅烷是烷基倍半氧化硅烷烷,例如甲基倍半氧化硅烷、乙基倍半氧化硅烷、丙基倍半氧化硅烷、丁基倍半氧化硅烷,等等;芳基倍半氧化硅烷例如苯基倍半氧化硅烷和甲苯基倍半氧化硅烷,烷基/芳基倍半氧化硅烷混合物例如甲基倍半氧化硅烷和苯基倍半氧化硅烷的混合物;和烷基倍半氧化硅烷的混合物例如甲基倍半氧化硅烷和乙基倍半氧化硅烷的混合物。B-阶段倍半氧化硅烷材料包括倍半氧化硅烷的均聚物,倍半氧化硅烷的共聚物或其混合物。这种介电材料一般可从市场买到或者通过已知方法制备。
优选的是,有机多硅是倍半氧化硅烷,更优选的是甲基倍半氧化硅烷、乙基倍半氧化硅烷、丙基倍半氧化硅烷、异丁基倍半氧化硅烷,叔丁基倍半氧化硅烷,苯基倍半氧化硅烷或其混合物。特别有用的倍半氧化硅烷包括氢化倍半氧化硅烷和烷基、芳基或烷芳基倍半氧化硅烷的混合物。特别是,用于本发明有用的倍半氧化硅烷是低聚物材料,其一般具有大约3-10000个重复单元。
可以理解可以使用介电材料的混合物,例如两种或多种有机多硅介电材料的的混合物或有机多硅基质材料与一或多种其它介电基质材料,即不是相同有机多硅介电基质材料的混合物。适宜的其它介电基质材料包括,但不限于,无机基质材料例如碳化物、氧化物、氮化物和硅、硼或铝的氟氧化物;和有机基质材料例如苯并环丁烯、聚(芳基酯)、聚(醚酮)、聚碳酸酯、聚酰亚胺、氟化聚酰亚胺、聚降冰片烯、聚(亚芳基醚)、聚芳烃例如,聚萘、聚口奎喔啉、聚(全氟烃)例如聚(四氟乙烯),和聚苯并噁唑。
优选的是,当使用有机多硅介电基质材料和另一介电基质材料的混合物时,有机多硅介电基质材料作为主要组份存在。进一步优选的是该掺和物形式的有机多硅介电基质材料是甲基倍半氧化硅烷,苯基倍半氧化硅烷或其混合物。
多孔体聚合物一般是交联颗粒并具有适于用作电子装置先进的互联结构中的改性剂的分子量和颗粒尺寸。一般对于这种应用的有用颗粒尺寸范围为高达1000nm,例如平均颗粒尺寸在大约0.5-1000nm范围。优选的是平均颗粒尺寸在大约0.5-200nm范围,更优选在0.5-50nm范围,最优选在1-20nm范围。本发明方法的优越性在于在介电基质中形成的微孔尺寸与所用的除去的多孔体颗粒尺寸是基本相同的尺寸,即大小。因此由本发明方法制备的多孔介电材料具有基本上均匀分散的微孔和基本上均匀的微孔尺寸,其平均微孔尺寸为0.5-1000nm范围,优选0.5-200nm范围,更优选在0.5-50nm范围,最优选在1-20nm范围。
该聚合的多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物。这种含有甲硅烷基的单体或聚(烯化氧)的单体可用于形成未交联聚合物,交联聚合物或这两种。含有硅的任何单体可以用作本发明含有甲硅烷基的单体。在此含有甲硅烷基单体中的硅部分可以是反应性的或不反应性的。含有甲硅烷基“反应性”单体的例子包括那些含有一或多个烷氧基或乙酸基的单体,例如,但不限于,含有三甲氧基甲硅烷基单体、含有三乙氧基甲硅烷基单体、含有甲基二甲氧基甲硅烷基单体,等等。含有甲硅烷基“不反应性”单体的例子包括那些含有烷基、芳基、链烯基或其混合物的单体,例如,但不限于,含有三甲基甲硅烷基单体、含有三乙基甲硅烷基单体、含有苯基二甲基甲硅烷基单体,等等。聚合的多孔体作为聚合单元意图包括含有甲硅烷基的单体,这些多孔体包括由含有甲硅烷基部分的单体通过聚合制备的多孔体。意图是不包括仅作为封端单元的含有甲硅烷基部分的线性聚合物。
适宜的含有甲硅烷基的单体包括,但不限于,乙烯基三甲基硅烷、乙烯基三乙基硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、γ-三甲氧基甲硅烷基丙基(甲基)丙烯酸酯、二乙烯基硅烷、三乙烯基硅烷、二甲基二乙烯基硅烷、二乙烯基甲基硅烷、甲基三乙烯基硅烷、二苯基二乙烯基硅烷、二乙烯基苯基硅烷、三乙烯基苯基硅烷、二乙烯基甲基苯基硅烷、四乙烯基硅烷、二甲基乙烯基二硅氧烷、聚(甲基乙烯基硅氧烷)、聚(乙烯基氢化硅氧烷)、聚(苯基乙烯基硅氧烷)、烯丙基氧-叔丁基-二甲基硅烷、烯丙基氧三甲基硅烷、烯丙基三乙氧基硅烷、烯丙基三异丙基硅烷、烯丙基三甲氧基硅烷、烯丙基三甲基硅烷、烯丙基三苯基硅烷、二乙氧基甲基乙烯基硅烷、二乙基甲基乙烯基硅烷、二甲基乙氧基乙烯基硅烷、二甲基苯基乙烯基硅烷、乙氧基二苯基乙烯基硅烷、甲基双(三甲基甲硅烷基氧)乙烯基硅烷、三乙酸基乙烯基硅烷、三乙氧基乙烯基硅烷、三乙基乙烯基硅烷、三苯基乙烯基硅烷、三(三甲基甲硅烷基氧)乙烯基硅烷、乙烯基氧三甲基硅烷或其混合物。
用于形成本发明多孔体的含有甲硅烷基单体的量一般为大约1-99%重量,基于所用单体的总重量。优选的是,含有甲硅烷基单体的量一般为1-大约80%重量,更优选为大约5-75%重量。
适宜的聚(烯化氧)单体包括,但不限于,聚(氧化丙烯)单体、聚(氧化乙烯)单体、聚(氧化乙烯/氧化丙烯)单体、聚(丙二醇)(甲基)丙烯酸酯、聚(丙二醇)烷基醚(甲基)丙烯酸酯、聚(丙二醇)苯基醚(甲基)丙烯酸酯、聚(丙二醇)4-壬基酚烷基醚(甲基)丙烯酸酯、聚(乙二醇)(甲基)丙烯酸酯、聚(乙二醇)烷基醚(甲基)丙烯酸酯、聚(乙二醇)苯基醚(甲基)丙烯酸酯、聚(丙烯/乙烯二醇)烷基醚(甲基)丙烯酸酯和其混合物。优选的聚(烯化氧)单体包括三甲氧基醇丙烷乙氧基化三(甲基)丙烯酸酯,三甲氧基醇丙烷丙氧基化三(甲基)丙烯酸酯,聚(丙二醇)甲基醚丙烯酸酯,等等。特别适宜的聚(丙二醇)甲基醚丙烯酸酯单体是分子量为大约200-2000的那些单体。用于本发明的聚(氧化乙烯/氧化丙烯)单体可以是线性的、嵌段或接枝共聚物。这种单体一般具有大约1-50,优选大约2-50的聚合度。
典型地,用于本发明多孔体中的聚(烯化氧)单体的量为大约1-99%重量,基于所用单体的总重量。聚(烯化氧)单体的量优选为大约2-90%重量,更优选为5-80%重量。
含有甲硅烷基的单体和聚(烯化氧)单体可单独使用或结合使用形成本发明的多孔体。优选的是结合使用含有甲硅烷基的单体和聚(烯化氧)单体。一般,使多孔体与介电基质材料相容所需的含有甲硅烷基的单体或聚(烯化氧)单体的量取决于在基质中所需加入多孔体的量,有机多硅介电基质的特殊组成和多孔体聚合物的组成。当结合使用含有甲硅烷基的单体和聚(烯化氧)单体时,一种单体的量可随着另一种单体量的增加而降低。因此,当混合物中含有甲硅烷基的单体的量增加时,混合物中聚(烯化氧)单体的量就可以降低。
适宜用作本发明多孔体的聚合物来源于一种或多种乙烯或乙炔不饱和单体,其作为聚合单元包括一种或多种选自在一种或多种交联剂上的含有甲硅烷基的单体和聚(烯化氧)单体的化合物。这种聚合物多孔体是可除去的,例如通过打开聚合物链至原始单体单元,它们易于穿过基质材料挥发和扩散。“可除去”意指聚合物颗粒解聚、分解或断裂成可挥发组分,该组分然后可穿过基质介电薄膜扩散。适宜与一种或多种含有甲硅烷基的单体或一种或多种聚(烯化氧)单体或其混合物共聚合的单体包括,但不限于,(甲基)丙烯酸、(甲基)丙烯酰胺、(甲基)丙烯酸烷基酯、(甲基)丙烯酸链烯基酯、(甲基)丙烯酸芳基酯、乙烯基芳基单体、含氮化合物和其硫代同型物,以及取代的乙烯单体。
典型地,用于本发明的(甲基)丙烯酸烷基酯是(甲基)丙烯酸(C1-C24)烷基酯。适宜的(甲基)丙烯酸酯烷基包括,但不限于,(甲基)丙烯酸“低馏分”烷基酯、(甲基)丙烯酸“中馏分”烷基酯和(甲基)丙烯酸“高馏分”烷基酯。
(甲基)丙烯酸“低馏分”烷基酯中烷基一般含有1-6个碳原子。适宜的(甲基)丙烯酸低馏分烷基酯包括,但不限于,甲基丙烯酸甲酯(“MMA”),丙烯酸甲基酯、丙烯酸乙基酯、甲基丙烯酸丙酯、甲基丙烯酸丁酯(“BMA”)、丙烯酸丁酯(“BA”)、甲基丙烯酸异丁酯(“IBMA”)、甲基丙烯酸己酯、甲基丙烯酸环己酯、丙烯酸环己酯和其混合物。
(甲基)丙烯酸“中馏分”烷基酯中烷基一般含有7-15个碳原子。适宜的中馏分烷基(甲基)丙烯酸酯包括,但不限于,丙烯酸2-乙基己基酯(“EHA”)、甲基丙烯酸2-乙基己基酯、甲基丙烯酸辛基酯、甲基丙烯酸癸酯、甲基丙烯酸异癸酯(“IDMA”,基于支化的(C10)烷基异构体混合物)、甲基丙烯酸十一烷基酯、甲基丙烯酸十二烷基酯(也称作月桂基甲基丙烯酸酯)、甲基丙烯酸十三烷基酯、甲基丙烯酸十四烷基酯(也称作肉豆蔻基甲基丙烯酸酯)、甲基丙烯酸十五烷基酯和其混合物。特别有用的混合物包括甲基丙烯酸十二烷基-十五烷基酯(“DPMA”)、甲基丙烯酸十二烷基、十三烷基、十四烷基和十五烷基酯的线性和支化异构体的混合物;以及甲基丙烯酸月桂基-肉豆蔻基酯(“LMA”)。
(甲基)丙烯酸“高馏分”烷基酯中烷基一般含有16-24个碳原子。适宜的(甲基)丙烯酸高馏分烷基酯包括,但不限于,甲基丙烯酸十六烷基酯、甲基丙烯酸十七烷基酯、甲基丙烯酸十八烷基酯、甲基丙烯酸十九烷基酯、甲基丙烯酸二十级烷基酯、甲基丙烯酸二十烷基酯和其混合物。特别有用的(甲基)丙烯酸高馏分烷基酯包括,但不限于,甲基丙烯酸的十六烷基-二十烷基酯(“CEMA”),其是甲基丙烯酸的十六烷基、十八烷基、二十级烷基和二十烷基酯的混合物;以及甲基丙烯酸十六烷基-硬脂酰酯(“SMA”),其是甲基丙烯酸的十六烷基和十八烷基酯的混合物。
上述(甲基)丙烯酸中馏分和高馏分烷基酯单体一般由标准酯化工艺制备,使用技术级长链脂肪醇,这些可买到的醇是各种链长度(在烷基中含有10和15或16和20个之间的碳原子)的醇的混合物。这些醇的例子是来自VistaChemical company的各种齐格勒催化的ALFOL醇,即ALFOL 1618和ALFOL1620;来自Shell Chemical company的各种齐格勒催化的NEODOL醇,即NEODOL25L,和天然衍生醇,例如Proctor & Gamble’s TA-1618和CO-1270。因此,对于本发明来说,(甲基)丙烯酸烷基酯不仅包括所命名的各个(甲基)丙烯酸烷基酯,还包括(甲基)丙烯酸烷基酯与占主要量的特殊命名的(甲基)丙烯酸烷基酯的混合物。
用于本发明的(甲基)丙烯酸烷基酯单体可以是单一的单体或是在烷基部分具有不同碳原子数的单体混合物。再有,用于本发明的(甲基)丙烯酰胺和烷基(甲基)丙烯酸酯单体可选择是被取代的。适宜选择的被取代(甲基)丙烯酰胺和烷基(甲基)丙烯酸酯单体包括,但不限于,(甲基)丙烯酸羟基(C2-C6)烷基酯、(甲基)丙烯酸二烷基氨基(C2-C6)烷基酯、二烷基氨基(C2-C6)烷基(甲基)丙烯酰胺。
特别有用的(甲基)丙烯酸被取代烷基酯单体是在烷基部分具有一或多个羟基的那些单体,尤其是在烷基中发现羟基在β位置(2-位)的那些单体。优选的是(甲基)丙烯酸羟烷基酯单体,其中取代的烷基是(C2-C6)烷基、支化或未支化的。适宜的(甲基)丙烯酸羟烷基酯单体包括,但不限于,甲基丙烯酸2-羟乙基酯(“HEMA”)、丙烯酸2-羟乙基酯(“HEA”)、甲基丙烯酸2-羟丙基酯、甲基丙烯酸1-甲基-2-羟乙基酯、丙烯酸2-羟丙基酯、丙烯酸1-甲基-2-羟乙基酯、丙烯酸1-甲基-2-羟乙基酯、甲基丙烯酸2-羟丁基酯、丙烯酸2-羟丁基酯和其混合物。优选的(甲基)丙烯酸羟烷基酯单体是HEMA、甲基丙烯酸1-甲基-2-羟乙基酯、甲基丙烯酸2-羟丙基酯和其混合物。后两种单体的混合物通常称作“甲基丙烯酸羟丙基酯”或“HPMA”。
用于本发明的其它取代的(甲基)丙烯酸酯和(甲基)丙烯酰胺是那些在烷基中带有二烷基氨基或二烷基氨烷基的单体。这些取代的(甲基)丙烯酸酯和(甲基)丙烯酰胺的例子包括,但不限于,甲基丙烯酸二甲基氨乙基酯、丙烯酸二甲基氨乙基酯、N,N-二甲基-氨乙基甲基丙烯酰胺、N,N-二甲基-氨丙基甲基丙烯酰胺、N,N-二甲基氨丁基甲基丙烯酰胺、N,N-二-乙基氨乙基甲基丙烯酰胺、N,N-二乙基氨丙基甲基丙烯酰胺、N,N-二乙基氨丁基甲基丙烯酰胺、N-(1,1-二甲基-3-氧代丁基)丙烯酰胺、N-(1,3-二甲基-1-乙基-3-氧代丁基)丙烯酰胺、N-(1-甲基-1-苯基-3-氧代丁基)丙烯酰胺,和2-羟乙基丙烯酰胺、氨乙基亚乙基脲的N-甲基丙烯酰胺、N-甲基丙烯酰氧乙基吗啉、二甲基氨丙基胺的N-马来酰亚胺及其混合物。
其它用于本发明的取代(甲基)丙烯酸酯单体是含有硅的单体例如,(甲基)丙烯酸γ-丙基三(C1-C6)烷氧基甲硅烷基酯、(甲基)丙烯酸γ-丙基三(C1-C6)烷基甲硅烷基酯、(甲基)丙烯酸γ-丙基二(C1-C6)烷氧基(C1-C6)烷基甲硅烷基酯、(甲基)丙烯酸γ-丙基二(C1-C6)烷基(C1-C6)烷氧基甲硅烷基酯、(甲基)丙烯酸乙烯基三(C1-C6)烷氧基甲硅烷基酯、(甲基)丙烯酸乙烯基三(C1-C6)烷氧基(C1-C6)烷基甲硅烷基酯、(甲基)丙烯酸乙烯基(C1-C6)烷氧基二(C1-C6)烷基甲硅烷基酯、(甲基)丙烯酸乙烯基三(C1-C6)烷基甲硅烷基酯,和其混合物。
在本发明中用作不饱和单体的乙烯基芳族单体包括,但不限于,苯乙烯(“STY”)、α-甲基苯乙烯、乙烯基甲苯、p-甲基苯乙烯、乙基乙烯基苯、乙烯基萘、乙烯基二甲苯、和其混合物。乙烯基芳族单体还包括其对应的被取代的配对物例如,卤化的衍生物,即,含有一或多个卤基,例如氟、氯或溴,和硝基、氰基、(C1-C10)烷氧基、卤化(C1-C10)烷基、羰基(C1-C10)烷氧基、羰基、氨基、(C1-C10)烷基氨基衍生物等等。
在本发明中用作不饱和单体的含氮化合物和其硫代同型物包括,但不限于,乙烯基吡啶例如,2-乙烯基吡啶或4-乙烯基吡啶,低级烷基(C1-C8)取代的N-乙烯基吡啶,例如2-甲基-5-乙烯基吡啶、2-乙基-5-乙烯基吡啶、3-甲基-5-乙烯基吡啶、 2,3-二甲基-5-乙烯基吡啶、和2-甲基-3-乙基-5-乙烯基吡啶、甲基取代的口奎啉和异口奎啉、N-乙烯基己内酰胺、N-乙烯基丁内酰胺、N-乙烯基吡咯烷酮、乙烯基咪唑、N-乙烯基咔唑、N-乙烯基-琥珀酰亚胺、(甲基)丙烯腈、邻-,间-,或对-氨基苯乙烯、马来酰亚胺、N-乙烯基噁唑烷酮、N,N-二甲基氨乙基-乙烯基-醚、乙基-2-氰基丙烯酸酯、乙烯基乙腈、N-乙烯基邻苯二甲酰亚胺、N-乙烯基-吡咯烷酮例如,N-乙烯基-硫代-吡咯烷酮、3-甲基-1-乙烯基-吡咯烷酮、4-甲基-1-乙烯基-吡咯烷酮、5-甲基-1-乙烯基-吡咯烷酮、3-乙基-1-乙烯基-吡咯烷酮、3-丁基-1-乙烯基-吡咯烷酮、3,3-二甲基-1-乙烯基-吡咯烷酮、4,5-二甲基-1-乙烯基-吡咯烷酮、5,5-二甲基-1-乙烯基-吡咯烷酮、3,3,5-三甲基-1-乙烯基-吡咯烷酮、4-乙基-1-乙烯基-吡咯烷酮、5-甲基-5-乙基-1-乙烯基-吡咯烷酮和3,4,5-三甲基-1-乙烯基-吡咯烷酮、乙烯基吡咯、乙烯基苯胺、和乙烯基哌啶。
在本发明中用作不饱和单体的被取代乙烯单体包括,但不限于,乙烯基乙酸酯、乙烯基甲酰胺、氯乙烯、氟乙烯、溴乙烯、亚乙烯基氯、亚乙烯基氟和亚乙烯基溴。
本发明中用作多孔体的聚合物可用各种聚合技术制备,例如溶液聚合或乳液聚合,并优选溶液聚合。用于本发明的溶液聚合物可以是线性、支化或接枝的并可以是共聚物或均聚物。特别适合的溶液聚合物包括交联共聚物。这些聚合物的分子量典型地在5000-1000000范围,优选10000-500000范围,更优选10000-100000范围。这些材料的多分散性在1-20的范围,优选1.001-15的范围,更优选在1.001-10的范围。
本发明的溶液聚合物一般在非水溶剂中制备。适于该聚合的溶剂是本领域熟知的。这种溶剂的例子包括,但不限于,烃例如烷烃、氟化烃、和芳香烃、醚、酮、酯、醇和其混合物。特别合适的溶剂包括十二烷烃、1,3,5-三甲基苯、二甲苯、二苯基醚、γ-丁内酯、乙基乳酸酯、丙二醇单甲基醚乙酸酯、己内酯、2-庚烷、甲基异丁基酮、二异丁基酮、丙二醇单乙基醚乙酸酯、癸醇、和叔丁醇。
本发明的溶液聚合物可用各种方法制备,例如在美国专利5863996(Graham)和美国专利申请号09/460326中揭示的内容教导这种聚合物的制备,这两项专利在此引作参考。用于本发明的乳液聚合物一般由上述美国专利申请号09/460326中教导的方法制备。
优选的是,本发明的聚合物用阴离子聚合或自由基聚合技术来制备。还优选的是用于本发明的聚合物不用阶段增长聚合工艺制备。
本发明的聚合物颗粒多孔体包括交联的聚合物链。本发明适用于任何量的交联剂。典型地,本发明的多孔体含有至少1%重量的交联剂,基于多孔体的重量,直至100%交联剂,基于多孔体的重量,它们均可有效地用于本发明的颗粒中。优选的是,交联剂的量在大约1-80%重量范围,更优选在大约1-60%重量范围。对于本领域的熟练人员来说,当多孔体中交联剂量增加时显然可以改变从介电材料中除去多孔体的条件。
适用于本发明的交联剂包括二,三,四,或更高的多官能乙烯不饱和单体。用于本发明的交联制的例子包括,但不限于,三乙烯基苯、二乙烯基甲苯、二乙烯基吡啶、二乙烯基萘和二乙烯基二甲苯,和例如乙二醇二丙烯酸酯、三甲醇丙烷三丙烯酸酯、二乙二醇二乙烯基醚、三乙烯基环己烷、烯丙基甲基丙烯酸酯(“ALMA”)、乙二醇二甲基丙烯酸酯(“EGDMA”)、二乙二醇二甲基丙烯酸酯(“DEGDMA”)、丙二醇二甲基丙烯酸酯、丙二醇二丙烯酸酯、三甲醇丙烷三甲基丙烯酸酯(“TMPTMA”)、二乙烯基苯(“DVB”)、甲基丙烯酸缩水甘油酯、2,2-二甲基丙烷1,3-二丙烯酸酯、1,3-丁二醇二丙烯酸酯、1,3-丁二醇二甲基丙烯酸酯、1,4-丁二醇二丙烯酸酯、二乙二醇二丙烯酸酯、二乙二醇二甲基丙烯酸酯、1,6-己二醇二丙烯酸酯、1,6-己二醇二甲基丙烯酸酯、三丙二醇二丙烯酸酯、三乙二醇二甲基丙烯酸酯、四乙二醇二丙烯酸酯、聚乙二醇200二丙烯酸酯、四乙二醇二甲基丙烯酸酯、聚乙二醇二甲基丙烯酸酯、乙氧基化双酚A二丙烯酸酯、乙氧基化双酚A二甲基丙烯酸酯、聚乙二醇600二甲基丙烯酸酯、聚(丁二醇)二丙烯酸酯、季戊四醇三丙烯酸酯、三甲醇丙烷三乙氧基三丙烯酸酯、甘油基丙氧基三丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇一羟基五丙烯酸酯,和其混合物。能够经受交联的含甲硅烷基的单体也可作为交联剂使用,例如,但不限于,二乙烯基硅烷、三乙烯基硅烷、二甲基二乙烯基硅烷、二乙烯基甲基硅烷、甲基三乙烯基硅烷、二苯基二乙烯基硅烷、二乙烯基苯基硅烷、三乙烯基苯基硅烷、二乙烯基甲基苯基硅烷、四乙烯基硅烷、二甲基乙烯基二硅氧烷、聚(甲基乙烯基硅氧烷)、聚(乙烯基氢化硅氧烷)、聚(苯基乙烯基硅氧烷)、四烯丙基硅烷、1,3-二甲基四乙烯基二硅氧烷、1,3-二乙烯基四甲基二硅氧烷和其混合物。
本发明的交联多孔体颗粒可直接加入B-阶段有机多硅介电基质材料中或首先纯化除去可能影响电子装置的电气或物理性能的杂质。多孔体颗粒的纯化可以通过多孔体颗粒的沉淀或通过杂质的吸附作用来完成。
本发明的溶液聚合物多孔体一般分子量在5000-1000000的范围,优选在10000-500000的范围,更优选在10000-100000的范围。该溶液聚合物多孔体一般颗粒尺寸高达大约1000nm,例如在0.5-1000mm范围。优选的是颗粒尺寸在大约0.5-200nm范围,更优选在大约0.5-50nm范围,最优选在大约1-20nm范围。这些溶液聚合物的多分散性在1-20的范围,更优选在1.001-15的范围,最优选在1.001-10的范围。
作为形成微孔介电材料中的多孔体,本发明的多孔体必须至少在一定条件下(该条件对介电基质材料不产生不利影响)可被部分除去,优选是基本上除去,更优选是完全除去。“可除去”是指聚合物解聚或断裂为挥发性细份或碎片,然后将其从介电材料除去或移出,产生微孔或孔隙。可以使用任何工艺或条件,只要能至少部分除去多孔体而不对介电基质材料造成不利影响就行。优选的是,基本上除去多孔体。典型的除去方法包括,但不限于暴露于加热或辐射,例如,但不限于,UV(紫外线)、X-射线、γ-射线、α粒子、中子束或电子束。优选的是将基质材料暴露于加热或UV光除去多孔体。
本发明的多孔体可在真空、氮气、氢气、氮气和氢气的混合物,例如形成气体,或其它惰性气体或减压气氛条件下热去除。本发明的多孔体可在任何温度条件下被去除,该温度可高于有机多硅介电基质材料的热固化温度或低于其热分解温度。典型地,本发明的多孔体可在150-500℃的温度范围内,优选在250-425℃的温度范围内被除去。典型地,本发明的多孔体可通过加热1-120分钟被除去。本发明的多孔体的优点是从有机介电基质材料除去之后,留下0-20%重量的多孔体。
在一个实施方案中,当本发明的多孔体通过暴露于辐射而被除去时,多孔体聚合物一般在惰性气氛下,例如氮气,暴露于辐射源,例如,但不限于,可见光或紫外光。从这种暴露所产生的多孔体碎片随惰性气体流从基质材料除去。该辐射能量通量必须足够高以产生足够数量的游离基致使至少部分多孔体颗粒被除去。对本领域的熟练人员来说是显然的,即可以使用热和辐射的结合来除去本发明的多孔体。
在制备本发明的介电基质材料中,首先将上述多孔体分散在或溶解在B-阶段有机多硅介电基质材料中。任意量的多孔体都可与本发明的B-阶段有机多硅介电基质材料结合。所用多孔体的量取决于所用的特殊多孔体,所用的特殊B-阶段有机多硅介电基质材料,以及在所得的多孔基质材料中所希望的介电常数下降量。典型地,所用的多孔体量在1-90%重量范围,优选10-80%重量,更优选15-60%重量,基于B-阶段有机多硅介电材料的量。特别有益的量的范围是1-60%重量。
本发明的多孔体可通过现有技术已知的任何方法与B-阶段有机多硅介电材料结合。典型地,B-阶段基质材料首先溶解在适宜的高沸点溶剂中,例如,但不限于,甲基异丁基酮、二异丁基酮、2-庚酮、γ-丁内酯、ε-己内酯、乙基乳酸酯、丙二醇单甲基醚乙酸酯、丙二醇单甲基醚、二苯基醚、苯甲醚、乙酸正戊酯、正乙酸丁酯,环己酮、N-甲基-2-吡咯烷酮,N,N’-二甲基丙基脲、1,3,5-三甲基苯、二甲苯,或其混合物,形成溶液。然后将该多孔体颗粒分散或溶解在溶液内。然后将所得的分散体通过现有技术已知方法,例如沉降涂覆、喷射涂覆或刮刀涂覆沉积在基质上,形成薄膜或层。
沉积在基质上之后,随后将B-阶段有机多硅介电材料基本上固化,形成硬的交联有机多硅介电基质材料而基本上不除去多孔体颗粒。有机多硅介电材料的固化可以是现有技术已知的任何方式,包括,但不限于,加热引发缩聚或电子束辐射产生游离基偶合低聚物或单体单元。典型地,B-阶段材料通过在高温加热固化,例如直接地恒温加热,例如在热板上,或以分步方式。典型地,含有聚合物多孔体的有机多硅首先在大约200℃-350℃的温度热处理,然后加热至更高的温度,例如大约400℃-450℃以便至少部分除去多孔体。这种固化条件对本领域的熟练人员是已知的。
一旦B-阶段有机多硅介电材料固化之后,使该薄膜经受这样的条件除去多孔体而基本上不降解有机多硅介电基质材料,即失去低于5%重量的介电基质材料。典型地,这种条件包括将薄膜暴露于加热和/或辐射。优选的是,将基质材料暴露于热或光线以除去多孔体。为了通过热除去多孔体,介电基质材料可通过烘箱加热或微波加热来加热。在典型的加热除去条件下,聚合的介电基质材料被加热至大约350-400℃。本领域的熟练人员可分辨出热不稳定多孔体的特殊除去温度将依据多孔体的组成而变化。在去除时,多孔体聚合物解聚或断裂为挥发组分或碎片,然后将其从介电材料除去或移出,产生微孔或孔隙,它们可用本方法中所用的载体气体填充。于是得到具有孔隙的多孔有机多硅介电材料,其中孔隙的尺寸与多孔体的颗粒尺寸基本相同。所得的具有孔隙的介电材料比没有这种孔隙的材料具有较低的介电常数。
一般,本发明用作多孔体的聚合物必须是在溶液中或在薄膜中可分散,可混合的或基本上可与主体介电基质材料相容的。因此,多孔体必须在相同的溶剂或混合溶剂系统中象主体B-阶段材料那样是可溶解的。还有,在此溶液中存在的多孔体必须是基本上分离的,基本上不聚集的或基本上不聚结的颗粒以便实现本发明所希望的益处,即,基本上均匀分散和与多孔体的尺寸可比较尺寸的孔隙。这可通过改进多孔体的组成使其可与主体介电基质材料相容来实现。因此,在制备多孔体时允许使用适宜浓度的适宜取代单体或官能单体来完全分散,或优选溶解本发明的多孔体聚合物至主体有机多硅介电B-阶段材料中。
本发明的优点是选择与所用介电材料基本上相容,优选是完全相容的多孔体。“相容”是指B-阶段有机多硅介电材料和多孔体的组合物对可见光是光学透明的。优选的是B-阶段有机多硅介电材料和多孔体的溶液,包括B-阶段有机多硅介电材料和多孔体的薄膜或层,包括有机多硅介电基质材料的组合物(其中有分散的多孔体),除去多孔体后所得的多孔介电材料对于可见光都是光学透明的。“基本上相容”是指B-阶段有机多硅介电材料和多孔体的组合物是稍微混浊或轻微不透明的。优选的是,“基本上相容”是指至少B-阶段有机多硅介电材料和多孔体的溶液,包括B-阶段有机多硅介电材料和多孔体的薄膜或层,包括有机多硅介电基质材料的组合物(其中有分散的多孔体),和除去多孔体后所得的多孔介电材料之一是稍微混浊或轻微不透明的。
要达到相容,多孔体必须是在B-阶段有机多硅介电材料中,在用于溶解B-阶段有机多硅介电材料的溶剂中或在这两种情况下都可溶解的或可混合的。当包括B-阶段有机多硅介电材料、多孔体和溶剂的组合物被铸塑为薄膜或层时,例如通过旋转铸造,很多溶剂蒸发。该薄膜铸塑之后,多孔体在B-阶段有机多硅介电材料必须是可溶解的致使其基本上均匀地分散保留其中。如果多孔体是不相容的,就发生多孔体与B-阶段有机多硅介电材料的相分离以及大区域或聚集形式,造成微孔尺寸增大和不均匀。这种相容多孔体可提供具有基本上均匀分布的微孔的固化介电材料,该微孔与多孔体颗粒具有基本上相同的尺寸。
多孔体和有机多硅介电基质材料的相容性一般通过其溶解度参数的匹配来测定,例如deltah和deltav的Van Krevelen参数,例如,参见Van Krevelen等人的Properties of Polvmers,Their Estimation and Correlation withChemical Structure,Elsevier Scientific Publishing Co.,1976;Olabisi等人.,Polymer-Polymer Miscibility,Academic Press,NY,1979;Coleman等人Specific Interactions and the Miscibility of PolymerBlends,Technomic,1991;和A.F.M.Barton CRC Handbook of SolubilityParameters and Other Cohesion Parameters.2nd Ed.,CRC Press 1991.Delta h是材料的氢键参数,delta v是材料的分散性和极性相互作用量度。这种溶解度参数可例如通过基组成方法计算,或通过测量混合溶剂系统(由可溶解的溶剂和不可溶解的溶剂组成)中材料的雾点来确定。雾点的溶解度参数定义为溶剂的重量百分比。典型地,测定材料的雾点数值且由此雾点值定义的中心区域被定义为材料的溶解度参数区域。
当多孔体和有机多硅介电基质材料的溶解度参数基本上类似时,多孔体与介电基质材料相容且很可能不发生多孔体的相分离和/或聚集。优选的是,多孔体和有机多硅介电基质材料的溶解度参数、特定delta h和delta v基本上相匹配。本领域的熟练人员可以理解影响多孔体溶解度的多孔体性能也影响多孔体与B-阶段有机多硅介电材料的相容性。本领域的熟练人员可以进一步理解一种多孔体可与一种B-阶段有机多硅介电材料而不会与另一种相容。这是由于不同B-阶段有机多硅介电材料的溶解度参数不同。
本发明的组合物,可相容性,即光学透明性没有多孔体材料聚集或长范围排列次序的缺点,即多孔体基本上均匀分散于整个B-阶段有机多硅介电材料中。因此,通过除去多孔体而得到的多孔有机多硅介电材料具有基本上均匀分散的微孔。这种基本上均匀分散的,很小的微孔在降低介电材料的介电常数方面是非常有效的。本发明的多孔体与有机多硅介电基质材料的相容性是通过从至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的单体制备多孔体而实现的。
本发明进一步的优点是得到低介电常数材料,其具有均匀分散孔隙、且比已知的介电材料具有较高的孔隙体积和/或比已知的介电材料较小的孔隙尺寸。这些孔隙为0.5-1000nm的数量级,优选0.5-200nm,更优选0.5-50nm,最优选1-20nm。此外,孔隙尺寸可通过改变可除去多孔体颗粒的尺寸而从1-1000nm以上进行调数。所得的有机多硅介电基质材料在机械接触过程中具有低应力、低介电常数、低折射指数、改进的韧性和改进的柔软性因而在压缩过程中需要较小的接触力。
由本发明方法制备的多孔有机多硅介电材料适用于任何应用,其中可用于低折射指数或低介电材料。当本发明的多孔介电材料是薄膜时,其可用作绝缘体、抗折射涂层、声音载体、热破坏、绝缘,光学涂层,等等。本发明的多孔有机多硅介电材料优选用于电子和光电装置中,包括,但不限于,多层集成电路,例如微信息处理机、数字信号处理机、存储芯片和带通过滤器的制造,从而提高它们的性能并降低它们的成本。
本发明的多孔有机多硅介电基质材料特别适用于集成电路的制造。在集成电路制造的一个实施方案中,作为第一步,在基质上沉积一层包括B-阶段有机多硅介电材料的组合物,其具有分散的或溶解于其中的聚合物多孔体以及可选择的溶剂。适宜的沉积方法包括,旋转铸塑、喷射铸塑和刮刀涂覆。适宜的可选择溶剂包括,但不限于,甲基异丁基酮、二异丁基酮、2-庚酮、γ-丁内酯、ε-己内酯、乙基乳酸酯、丙二醇单甲基醚乙酸酯、丙二醇单甲基醚、二苯基醚、苯甲醚、乙酸正戊酯、乙酸正丁酯、环己酮、N-甲基-2-吡咯烷酮、N,N’-二甲基丙烯脲、1,3,5-三甲基苯、二甲苯或其混合物。适宜的基质包括,但不限于,硅、二氧化硅、碳氧化硅、硅锗、绝缘体上的硅、玻璃、氮化硅、陶瓷、铝、铜、砷化镓、塑料,例如,聚碳酸酯、电路板,例如FR-4和聚酰亚胺,和杂化电路板、例如,铝氮化氧化铝。这类基质可进一步包括沉积在其上的薄膜,这些薄膜包括,但不限于,金属氮化物、金属碳化物、金属硅化物、金属氧化物、和其混合物。在多层集成电路装置中,绝缘的底层、平面电路线也可用作基质。
在制造集成电路的第二步聚,将组合物加热升温以固化B-阶段有机多硅介电材料形成有机多硅介电基质材料而不破坏聚合物多孔体。也可以使用催化剂,例如Bronsted(布朗斯台德)或路易斯碱。或布朗斯台德或路易斯酰,在第三步骤,将所得的固化有机多硅介电基质材料经受这样的条件,使其中所含有的多孔体基本上被除去而不有害影响介电基质材料从而产生多孔有机多硅介电材料。也可选择在有机多硅介电材料上沉积一帽层。此可选择的帽层在多孔体除去步骤之前或之后。适宜的帽层包括密实的介电材料。例如,但不限于,有机多硅介电材料、二氧化硅、碳氧化硅、碳化硅、绝缘体上的硅、氮化硅、氟氧化硅、苯并丁因、聚(芳基醚)、聚(芳基酯)、聚(醚酮)、聚碳酸酯、聚酰亚胺、氟化聚酰亚胺、聚降冰片烯、聚芳香烃,例如聚萘、聚喹喔啉、聚(全氟烃),例如,聚(四氟乙烯)、和聚苯并噁唑。典型地,这种帽层材料通过化学蒸汽沉积法、物理蒸汽沉积法或自旋方法,或其它本领域熟练人员已知的方法沉积。
然后对多孔有机多硅介电材料平版印刷图案在随后的步骤中形成通道和/或沟槽。该沟槽一般延伸至基质并连接到至少一个金属通道。典型地,平版印刷图案包括(i)用阳性或阴性感光树脂,例如由Shipley Company销售的那些树脂(Marlborough),涂覆介电材料层;(ii)成象位置暴露,通过障板,感光树脂至辐射源,例如适当波长的光线或电子束;(iii)用合适的显影剂将感光树脂中的成象显影;和(iv)用合适的传输技术,例如活性离子束蚀刻法将成象通过介电层传送到基质。可选择的是,在感光树脂涂覆之前将抗折射组合物分散到介电材料上。这种平版印刷图案技术对本领域的熟练人员是公知的。
然后将金属膜沉积到有图案的介电层上填充沟槽。优选的金属材料包括,但不限于,铜、钨、金、银、铝或其合金。典型地,用本领域熟练人员公知的技术将金属沉积到有图案的介电层上。这种技术包括,但不限于,化学蒸汽沉积(“CVD”)、等离子-增强的CVD、燃烧CVD(“CCVD”),电子或无电子沉积、溅射,等等。可选择的是,在有图案和蚀刻的材料上沉积一金属内衬,例如一层镍、钽、钛、钨、或铬,包括其氮化物或硅化物,或其它层例如载体或粘合层,例如氮化硅或氮化钛。
在制造集成电路工艺的第五步骤,除去过量的金属材料,例如,通过整平金属膜,致使所得的金属材料一般与有图案的介电层相当的水平。典型地,整平用化学/机械拋光方法或局部湿法或干法蚀刻进行。这种整平方法对本领域的熟练人员是公知的。
对本领域的熟练人员来说显然通过随后重复上述步骤即可涂施多层介电材料,包括有机多硅介电材料和金属层的多层。对本领域的熟练人员来说进一步显然的是本发明的组合物可用于集成电路制造的任何方法和所有方法。
以下的例子用于进一步说明本发明的各介方面,但在任何方面都不限定本
发明的范围。
实施例1
测定可买到的具有不同分子量的各种甲基倍半氧化硅烷(“MeSQ”)中众多多孔体样品的相容性。所测试的各种市售MeSQ样品示于表1。MeSQ样品A和B仅仅是甲基倍半氧化硅烷,样品C是甲基苯基倍半氧化硅烷。相容性测定是通过肉眼观察甲基倍半氧化硅烷介电基质材料和多孔体的薄膜进行的,该薄膜离心铸塑在硅的晶片上。所有的肉眼观察都是在白天以裸眼进行的。所有的样品都是透明的,除非另有说明。多孔体样品是作为用于制备多孔体样品的单体报告的并同时报告所用单体的比例。样品的折射指数也被测定。相容性结果示于表2。评价MeSQ基质中多孔体的不同载荷值。该载荷值在表2中以重量百分比报告。
表1MeSQ基质 分子量 羟基含量A 高 低B 低 高C 中 中
表2多孔体 MeSQ样品 多孔体% R.I.无 A 1.3721.367元 B 1.365无 C 1.502无 A/C(9∶1) 1.3741.374MMA/TMSOEMA/ALMA(60/30/10) A 50 烟MMA/TMSOEMA/ALMA(60/30/10) B 50 1.216MMA/VTMS/ALMA(45/45/10) A 50 烟MMA/VTMS/ALMA(45/45/10) B 50 1.228MMA/TMSMA/ALMA(45/45/10) A 50 烟MMA/TMSMA/ALMA(45/45/10) B 50 不透明MMA/MAPS/ALMA(60/30/10) A 30 1.353MMA/MAPS/ALMA(60/30/10)MMA/MAPS/ALMA(45/45/10) A 30 1.359MMA/MAPS/ALMA(45/45/10) 30 1.349(烟)C 30 1.503MMA/MAPS/ALMA(30/60/10) A 50 1.391MMA/MAPS/ALMA(30/60/10) B 50 1.365MA/MAPS/ALMA(10/80/10) A 50 1.376MA/MAPS/ALMA(10/80/10) A/C(9∶1) 50MA/MAPS/ALMA(30/60/10) A 50 1.373MA/MAPS/ALMA(30/60/10) A/C(9∶1) 50MMA/MAPTMSMS/ALMA(10/80/10) A 50 1.364MMA/MAPTMSMS/ALMA(10/80/10) A/C(9∶1) 50MMA/MAPMDMOS/ALMA(10/80/10) A 50 1.372MMA/MAPMDMOS/ALMA(10/80/10) B 50 1.327BA/MAPS/TMPTMA(18/72/10) A 50 1.370BA/MAPS/TMPTMA(18/72/10) A/C(9∶1) 50BA/MAPS/TMPTMA(45/45/10) A 50 1.371BA/MAPS/TMPTMA(45/45/10) B 50 1.323BA/MAPS/TMPTMA(72/18/10) A 50 1.353BA/MAPS/TMPTMA(72/18/10) B 50 1.263B 50 不透明C 50 1.440/1.50230 1.5BA/HPMA/MAPS/TMPTMA(15/60/15/10) A 50 NABA/HPMA/MAPS/TMPTMA(15/60/15/10) 30 不透明A/C(9∶1) 50 不透明B 50 1.272C 50 1.508/1.50230 1.506BA/HPMA/MAPS/TMPTMA(60/15/15/10) A 50 1.353(烟)BA/HPMA/MAPS/TMPTMA(60/15/15/10) A/C(9∶1) 30 1.36850 烟B 50 1.333C 50 凝胶BA/HPMA/MAPS/TMPTMA(15/15/60/10) A 50 1.381BA/HPMA/MAPS/TMPTMA(15/15/60/10) A/C(9∶1) 50 1.390B 50 1.197BA/VTMOS/DVB(80/10/10) C 50 1.523/1.502BA/VTMOS/DVB(80/10/10) A/C(9∶1) 50 1.360(烟)B 50 1.214BA/VTMOS/DVB(85/5/10) C 50 1.531/1.502BA/VTMOS/DVB(85/5/10) A/C(9∶1) 50 1.364(烟)B 50 1.273PPGMEA260/VTMOS/DVB(80/10/10) C 50 1.526/1.502PPGMEA260/VTMOS/DVB(80/10/10) A/C(9∶1) 50 1.367
B 50 1.232
A 30 1.304PEGMEMA475/VTMOS/DVB(80/10/10) C 50 1.520/1.502PEGMEMA475/VTMOS/DVB(80/10/10) A/C(9∶1) 30 1.354
50 1.356
B 50 1.251
A 30 1.292PPGMEA260/VTMS/DVB(80/10/10) C 50 凝胶PPGMEA260/VTMS/DVB(80/10/10) 30 1.515
A/C(9∶1) 50 1.325
B 50 1.230
A 30 1.334(烟)PEGMEMA475/VTMOS/TMPTMA(80/10/10) C 30 1.510PEGMEMA475/VTMOS/TMPTMA(80/10/10) A/C(9∶1) 50 1.329
B 50 1.210PEGMEMA475/VTMS/TMPTMA(80/10/10) C 50 1.523PEGMEMA475/VTMS/TMPTMA(80/10/10) A/C(9∶1) 50 不透明
B 50 1.263PPGMEA260/VTMOS/TMPTMA(80/10/10) C 50 1.530/1.502PPGMEA260/VTMOS/TMPTMA(80/10/10) A/C(9∶1) 50 1.371
B 50 1.218
A 30 1.272(烟)PPGMEA260/VTMS/TMPTMA(80/10/10) C 50 1.525PPGMEA260/VTMS/TMPTMA(80/10/10) 30 1.508
A/C(9∶1) 50 1.36
B 50 不透明
A 30 不透明BA/VTMS/TMPTMA(80/10/10) C 50 1.512/1.502BA/VTMS/TMPTMA(80/10/10) 30 1.500
A/C(9∶1) 50 不透明
烟指的是组合物为很轻微的云状。当多孔体和MeSQ基质材料至少基本上相容时就得到透明样品。该样品比MeSQ对比样品加具有较低的折射指数从而表现为低于MeSQ基质材料的介电常数。因此,上述数据清楚地显示本发明的多孔体与有机多硅介电材料是基本上相容的。
实施例2
使用本发明的聚合物多孔体制造多孔介电薄膜。通过在丙二醇甲基醚乙酸酯(1.55g,15%)中将MeSQ基质C(0.0265g)和MeSQ基质A(0.21g)与具有聚合单元PEGMEMA475/VTMOS/TMOTMA(80/10/10)的多孔体结合制备甲基硅奎诺烷(“MeSQ”)样品。使用沉降浇铸法将样品沉积在硅片上作为薄涂层。通过涂覆周期、干燥周期和最终沉降周期的持续期间和沉降速率控制薄膜的厚度(测定为~1.3μm)。然后150℃加工该硅片1分钟随后放入PYREXTM容器在烘箱中于氩气氛下加热至200℃。监视容器中氧气的含量并在加热样品之前维持在5ppm以下。在200℃加热30分钟之后,使燃烧室以每分钟10℃的速率加热至420℃的温度并保持60分钟。在此温度完成聚合物颗粒的分解而不产生聚合物延伸。
Claims (23)
1.一种制备多孔有机多硅介电材料的方法,包括以下步骤:a)在半熔阶段有机多硅介电材料中分散可除去的交联聚合物多孔体;b)固化半熔阶段有机多硅介电材料形成有机多硅介电基质材料而基本上不破坏多孔体;和c)使有机多硅介电基质材料经受这样的条件,即至少部分除去多孔体形成多孔有机多硅介电材料而基本上不破坏有机多硅介电材料,其中多孔体与半熔阶段有机多硅介电材料基本上相容而且其中多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物和一种或多种交联剂。
2.权利要求1的方法,其中聚合物多孔体的颗粒尺寸在大约0.5-大约1000nm的范围。
3.权利要求2的方法,其中颗粒尺寸在大约0.5-大约200mm的范围。
4.权利要求1的方法,其中含有甲硅烷基的单体选自乙烯基三甲基硅烷、乙烯基三乙基硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、(甲基)丙烯酸γ-三甲氧基甲硅烷基丙基酯、二乙烯基硅烷、三乙烯基硅烷、二甲基二乙烯基硅烷、二乙烯基甲基硅烷、甲基三乙烯基硅烷、二苯基二乙烯基硅烷、二乙烯基苯基硅烷、三乙烯基苯基硅烷、二乙烯基甲基苯基硅烷、四乙烯基硅烷、二甲基乙烯基二硅氧烷、聚(甲基乙烯基硅氧烷)、聚(乙烯基氢化硅氧烷)、聚(苯基乙烯基硅氧烷)、烯丙氧基-叔丁基-二甲基硅烷、烯丙氧基三甲基硅烷、烯丙基三乙氧基硅烷、烯丙基三异丙基硅烷、烯丙基三甲氧基硅烷、烯丙基三甲基硅烷、烯丙基三苯基硅烷、二乙氧基甲基乙烯基硅烷、二乙基甲基乙烯基硅烷、二甲基乙氧基乙烯基硅烷、二甲基苯基乙烯基硅烷、乙氧基二苯基乙烯基硅烷、甲基双(三甲基甲硅烷基氧)乙烯基硅烷、三乙酸基乙烯基硅烷、三乙氧基乙烯基硅烷、三乙基乙烯基硅烷、三苯基乙烯基硅烷、三(三甲基甲硅烷基氧)乙烯基硅烷、乙烯基氧三甲基硅烷或其混合物。
5.权利要求1的方法,其中聚(烯化氧)单体选自聚(氧化丙烯)单体、聚(氧化乙烯)单体、聚(氧化乙烯/氧化丙烯)单体、聚(丙二醇)(甲基)丙烯酸酯、聚(丙二醇)烷基醚(甲基)丙烯酸酯、聚(丙二醇)苯基醚(甲基)丙烯酸酯、聚(丙二醇)4-壬基酚烷基醚(甲基)丙烯酸酯、聚(乙二醇)(甲基)丙烯酸酯、聚(乙二醇)烷基醚(甲基)丙烯酸酯、聚(乙二醇)苯基醚(甲基)丙烯酸酯、聚(丙烯/乙烯二醇)烷基醚(甲基)丙烯酸酯或其混合物。
6.权利要求1的方法,其中半熔阶段有机多硅介电基质材料具有如下分子式:
((RR1SiO)a(R2SiO1.5)b(R3SiO1.5)c(SiO2)d)n其中R、R1、R2和R3独立地选自氢、(C1-C6)烷基、芳基和被取代芳基;a、c和d独立地选自0-1的数值;b是0.2-1的数值;n是大约3-大约10000的整数;条件是a+b+c+d=1;且条件是至少R,R1和R2之一不是氢。
7.权利要求6的方法,其中倍半氧化硅烷选自甲基倍半氧化硅烷、苯基倍半氧化硅烷或其混合物。
8.权利要求1的方法,其中聚合物多孔体进一步包括一或多个交联剂作为聚合单元。
9.权利要求1的方法,其中半熔阶段有机多硅介电材料进一步包括一或多种其它介电材料。
10.一种由权利要求1的方法制备的多孔有机多硅介电基质材料。
11.一种制备集成电路的方法,包括以下步骤:a)在基质上沉积一组合物层,该组合物包括半熔阶段有机多硅介电材料及分散在其中的交联聚合物多孔体;b)固化半熔阶段有机多硅介电材料形成有机多硅介电基质材料而基本上不除去多孔体;c)使有机多硅介电基质材料经受这样的条件,即至少部分除去多孔体形成多孔有机多硅介电材料层而基本上不破坏有机多硅介电材料;d)在有机多硅介电层上压花;e)在压花的有机多硅介电层上沉积金属膜;和f)展平该膜形成集成电路;其中多孔体与半熔阶段有机多硅介电材料基本相容而且其中多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(烯化氧)单体的化合物和一种或多种交联剂。
12.权利要求11的方法,其中聚合物多孔体的颗粒尺寸在大约0.5-大约1000nm的范围。
13.权利要求11的方法,其中含有甲硅烷基的单体选自乙烯基三甲基硅烷、乙烯基三乙基硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、(甲基)丙烯酸γ-三甲氧基甲硅烷基丙基酯、二乙烯基硅烷、三乙烯基硅烷、二甲基二乙烯基硅烷、二乙烯基甲基硅烷、甲基三乙烯基硅烷、二苯基二乙烯基硅烷、二乙烯基苯基硅烷、三乙烯基苯基硅烷、二乙烯基甲基苯基硅烷、四乙烯基硅烷、二甲基乙烯基二硅氧烷、聚(甲基乙烯基硅氧烷)、聚(乙烯基氢化硅氧烷)、聚(苯基乙烯基硅氧烷)、烯丙氧基-叔丁基-二甲基硅烷、烯丙氧基三甲基硅烷、烯丙基三乙氧基硅烷、烯丙基三异丙基硅烷、烯丙基三甲氧基硅烷、烯丙基三甲基硅烷、烯丙基三苯基硅烷、二乙氧基甲基乙烯基硅烷、二乙基甲基乙烯基硅烷、二甲基乙氧基乙烯基硅烷、二甲基苯基乙烯基硅烷、乙氧基二苯基乙烯基硅烷、甲基双(三甲基甲硅烷基氧)乙烯基硅烷、三乙酸基乙烯基硅烷、三乙氧基乙烯基硅烷、三乙基乙烯基硅烷、三苯基乙烯基硅烷、三(三甲基甲硅烷基氧)乙烯基硅烷、乙烯基氧三甲基硅烷或其混合物。
14.权利要求11的方法,其中聚(烯化氧)单体选自聚(氧化丙烯)单体、聚(氧化乙烯)单体、聚(氧化乙烯/氧化丙烯)单体、聚(丙二醇)(甲基)丙烯酸酯、聚(丙二醇)烷基醚(甲基)丙烯酸酯、聚(丙二醇)苯基醚(甲基)丙烯酸酯、聚(丙二醇)4-壬基酚烷基醚(甲基)丙烯酸酯、聚(乙二醇)(甲基)丙烯酸酯、聚(乙二醇)烷基醚(甲基)丙烯酸酯、聚(乙二醇)苯基醚(甲基)丙烯酸酯、聚(丙烯/乙烯二醇)烷基醚(甲基)丙烯酸酯或其混合物。
15.权利要求11的方法,其中半熔阶段有机多硅介电基质材料具有如下分子式:
((RR1SiO)a(R2SiO1.5)b(R3SiO1.5)c(SiO2)d)n其中R、R1、R2和R3独立地选自氢、(C1-C6)烷基、芳基和被取代芳基;a、c和d独立地选自0-1的数值;b是0.2-1的数值;n是大约3-大约10000的整数;条件是a+b+c+d=1;且条件是至少R,R1和R2之一不是氢。
16.由权利要求11的方法制备的装置。
17.一种组合物,包括B-阶段有机多硅介电材料和交联的聚合物多孔体,其中多孔体与B-阶段有机多硅介电材料基本相容,且多孔体包括作为聚合单元的至少一种选自含有甲硅烷基单体或聚(氧化烷基)单体的化合物和一种或多种交联剂。
18.权利要求17的组合物,其中聚合物多孔体的颗粒尺寸在大约0.5-大约1000nm的范围。
19.权利要求17的组合物,其中含有甲硅烷基的单体选自乙烯基三甲基硅烷、乙烯基三乙基硅烷、乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷、(甲基)丙烯酸γ-三甲氧基甲硅烷基丙基酯、二乙烯基硅烷、三乙烯基硅烷、二甲基二乙烯基硅烷、二乙烯基甲基硅烷、甲基三乙烯基硅烷、二苯基二乙烯基硅烷、二乙烯基苯基硅烷、三乙烯基苯基硅烷、二乙烯基甲基苯基硅烷、四乙烯基硅烷、二甲基乙烯基二硅氧烷、聚(甲基乙烯基硅氧烷)、聚(乙烯基氢化硅氧烷)、聚(苯基乙烯基硅氧烷)、烯丙氧基-叔丁基-二甲基硅烷、烯丙氧基三甲基硅烷、烯丙基三乙氧基硅烷、烯丙基三异丙基硅烷、烯丙基三甲氧基硅烷、烯丙基三甲基硅烷、烯丙基三苯基硅烷、二乙氧基甲基乙烯基硅烷、二乙基甲基乙烯基硅烷、二甲基乙氧基己烯基硅烷、二甲基苯基乙烯基硅烷、乙氧基二苯基乙烯基硅烷、甲基双(三甲基甲硅烷基氧)乙烯基硅烷、三乙酸基乙烯基硅烷、三乙氧基乙烯基硅烷、三乙基乙烯基硅烷、三苯基乙烯基硅烷、三(三甲基甲硅烷基氧)乙烯基硅烷、乙烯基氧三甲基硅烷或其混合物。
20.权利要求17的组合物,其中B-阶段有机多硅介电基质材料具有如下分子式:
((RR1SiO)a(R2SiO1.5)b(R3SiO1.5)c(SiO2)d)n其中R、R1、R2和R3独立地选自氢、(C1-C6)烷基、芳基和被取代芳基;a、c和d独立地选自0-1的数值;b是0.2-1的数值;n是大约3-大约10000的整数;条件是a+b+c+d=1;且条件是至少R,R1和R2之一不是氢。
21.权利要求20的组合物,其中倍半氧化硅烷选自甲基倍半氧化硅烷、苯基倍半氧化硅烷或其混合物。
22.权利要求17的组合物,其中聚(烯化氧)单体选自聚(氧化丙烯)单体、聚(氧化乙烯)单体、聚(氧化乙烯/氧化丙烯)单体、聚(丙二醇)(甲基)丙烯酸酯、聚(丙二醇)烷基醚(甲基)丙烯酸酯、聚(丙二醇)苯基醚(甲基)丙烯酸酯、聚(丙二醇)4-壬基酚烷基醚(甲基)丙烯酸酯、聚(乙二醇)(甲基)丙烯酸酯、聚(乙二醇)烷基醚(甲基)丙烯酸酯、聚(乙二醇)苯基醚(甲基)丙烯酸酯、聚(丙烯/乙烯二醇)烷基醚(甲基)丙烯酸酯或其混合物。
23.权利要求17的组合物,其中多孔体与B-阶段有机多硅介电材料完全相容。
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CN106501889A (zh) * | 2015-09-08 | 2017-03-15 | 苹果公司 | 用于电子设备的有色表面的折射涂层 |
CN109893269A (zh) * | 2019-03-15 | 2019-06-18 | 温州医科大学附属口腔医院 | 一种减少细菌附着率的牙合垫 |
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EP1172823B1 (en) | 2007-11-28 |
TWI295304B (en) | 2008-04-01 |
CN1255459C (zh) | 2006-05-10 |
KR20020007135A (ko) | 2002-01-26 |
DE60131601T2 (de) | 2008-10-23 |
JP2002037912A (ja) | 2002-02-06 |
JP5027356B2 (ja) | 2012-09-19 |
KR100811495B1 (ko) | 2008-03-07 |
SG100647A1 (en) | 2003-12-26 |
US6271273B1 (en) | 2001-08-07 |
DE60131601D1 (de) | 2008-01-10 |
EP1172823A1 (en) | 2002-01-16 |
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