CN1305880A - 具有提高刀刃韧度并减小摩擦的纳米晶cvd涂层的涂覆刀体 - Google Patents
具有提高刀刃韧度并减小摩擦的纳米晶cvd涂层的涂覆刀体 Download PDFInfo
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Abstract
本发明公开了一种具有Ti(C,N,O)纳米晶CVD涂层的涂覆刀体。涂层用MTCVD工艺形成,并且气体混合物的一部分为CO、CO2或其混合物。在涂覆过程中采用这种添加剂可以得到小得多的、等轴粒径。另外,还公开了形成涂覆刀体的方法。
Description
本发明涉及一种涂覆有纳米晶涂层的涂覆刀体及其制备方法。
金属切削中采用涂覆刀体是广为人知的。通常,刀体由硬质合金、金属陶瓷或陶瓷制得,而涂层则是一种或多种第ⅥB族金属的碳化物、氮化物、氧化物或其混合物。例如,涂覆有TiC层、Al2O3层和TiN层的硬质合金刀体被广泛采用。涂层的组成和厚度可以有多种变化,进行涂覆的方法也有多种,如CVD法(化学气相淀积法)和PVD法(物相气相淀积法),其中CVD法可以在约900℃至1250℃的常规温度下进行,也可以在约700℃至900℃的中温下进行,即中温化学气相淀积法(MTCVD)。
CVD法的TiC涂层一般由等轴粒子构成,粒径为约0.5微米至1.0微米。CVD法的TiN涂层以及MTCVD法的Ti(C,N)涂层则由柱状粒子构成,粒子的长度接近涂层的厚度。CVD法涂层的形貌可用工艺条件调控稍作改善,但MTCVD法涂层很难用常规的工艺调控进行改善。
一般来说,多晶材料的硬度(也包括涂层)服从Hall-Petch方程:H=H°+C/√d,式中H是多晶材料的硬度,H°是单晶的硬度,C是材料常数,d是粒径。从该方程式可以看到,降低粒径,可以提高材料的硬度。然而,常规CVD涂层和MTCVD涂层中粒径至少为0.5微米或更高。MTCVD涂层更是具有大柱状粒子的特点,其晶粒长度接近涂层的厚度。
美国再公告专利31,526中指出,在形成Al2O3涂层时,使用添加剂如四价钛、铪和/或锆的化合物,可以促使形成一种特定的相态。另外,美国专利4,619,886中公开了使用选自硫、硒、碲、磷、砷、锑、铋和其混合物的添加剂,可以提高CVD涂覆Al2O3的生长速率,同时还会促使形成均匀的涂层。
CO2也同样被用于部分涂覆工艺中。具体地讲,它被用于氧化工艺中,在这类工艺中,CO2与H2反应形成H2O,即氧化性的气体。如可参阅美国专利5,827,570。
本发明的目的之一就是要避免或减轻现有技术中的问题。
本发明的另一个目的就是提供一种涂层,该涂层具有显著较小的粒径和伴生硬度。
一方面,本发明提供了一种具有涂层的涂覆刀体,所说的涂层为粒径25nm或更小的Ti(C,N,O)涂层。
另一方面,本发明提供了一种制备涂覆有Ti(C,N,O)的刀体的方法,其包括将刀体与含有卤化钛、氮化合物、碳化合物、还原剂以及CO和/或CO2的添加剂的气体接触,使得足以形成粒径小于25nm的Ti(C,N,O)。
已经发现,对于MTCVD法涂覆的涂层,在MTCVD工艺中,向涂覆气体中加入少量的CO或CO2或其混合物、优选CO作添加剂,可以使涂层的粒径变得小得多,并形式等轴形状的粒子。为了使所得涂层的粒径在25nm数量级或更低,优选10nm或更低,MTCVD气体混合物中的CO量应当占气体混合物总量的约5%至10%,优选为约7%至9%。如果采用CO2,则其应当占气体混合物总量的约0.5%至1.0%,优选0.4%至0.6%。CO和/或CO2添加剂可以在反应的任何时候加入,加入方式可以是连续的,也可以是间断的。如果使用CO2和/或CO/CO2混合物,工匠们就应当小心,以避免形成Magnelli相。
尽管上述添加剂可以加入到形成各种涂层的反应物气体混合物中,但发现其在形成Ti(C,N,O)涂层时特别有用,而在此如果没有上述添加剂,则会形成Ti(C,N)涂层。在Ti(C,N,O)涂层中,各组份的比例一般如下:O/Ti,0.1-0.40,优选0.20-0.30;C/Ti,约0.40-0.60,优选0.50-0.60;N/Ti,约0.15-0.35,优选0.20-0.30。虽然本发明的方法优选用于形成Ti(C,N,O)涂层,但也可以用于涂覆Ti(C,O)涂层,而此处如果没有上述添加剂,则会形成TiC涂层。
纳米晶层既可以作为最外层涂覆,也可以作为内层涂覆。从下面可以看到,纳米晶涂层更为坚硬,但在较高温度下(较高的切削速度下)晶粒边界发生滑动,导致塑性变形。由于这种涂层的粒径极小,其表面光滑度增加,摩擦系数减小。因而,纳米晶涂层显然可以起到降低摩擦/润滑层的作用,并应当沉积在现有涂层结构的最顶层上。然而,具有交替纳米晶层的MTCVD/CVD的涂层(在MTCVD/CVD工艺中使用添加开关ON/OFF,有可能形成MTCVD纳米层结构/纳米晶层)应当显示出众的/新的性质。纳米晶层可以与其它的涂层材料一起使用,如与氧化铝(κ或α)或其它氧化物或TiN形成由MTCVD层和纳米粒子层构成的纳米层结构。当优选使用主要为Ti(C,N)的涂层时,插入在MTCVD涂层中的非常薄的纳米晶层可以用来控制MTCVD涂层的粒径。如果纳米晶层用作最外层,那么它可以涂覆于Al2O3层上,而Al2O3层本身又可以涂覆于一层或多层的其它层之上,例如TiC层之上。Al2O3层可以是α-相、κ-相,或者是α-相和κ-相Al2O3的混合物。纳米晶层也可以涂覆于TiN层之上。
类似地,如果纳米晶层用作内层时,可以用其它的层如Al2O3、TiC、Ti(C,N),TiN或类似物的层涂覆于纳米晶层之上。
这些各种其它的内层和/或外层可以用CVD法、MTCVD法或PVD法涂覆。
等轴的意思是指粒子在所有的方向上具有基本上相同的尺寸。
另外,结合下面的实施例来说明本发明。这些实施例只是用来解释本发明,然而应当理解,本发明并非局限于这些实施例的特定细节。实施例1
在这种情况下使用CO添加剂。根据表1中的工艺数据,在65毫巴的压力下,制备下列五个实验涂层(叫做涂层1,2,3,4和5)。
表1
粒径
H2(升/分) | N2(升/分) | CH3CN(升/分) | TiCl4(升/分) | CO% | |
涂层1 | 其余 | 25 | 0.5 | 2 | 0 |
涂层2 | 其余 | 25 | 0.5 | 2 | 3 |
涂层3 | 其余 | 25 | 0.5 | 2 | 4 |
涂层4 | 其余 | 25 | 0.5 | 2 | 6 |
涂层5 | 其余 | 25 | 0.5 | 2 | 8 |
涂层1-5用透射电子显微镜(TEM)进行研究,以便搞清CO的添加对粒径的影响。看起来很清楚,添加CO,使得由大柱状晶粒构成的MTCVD Ti(C,N)涂层的微观结构发生强烈细化。当CO添加量达到约8%时,其结构变为纳米晶。X-射线衍时(XRD)
用XRD研究涂层1、3、4和5。晶粒细化可清楚地用线展宽来表示。表2中给出了线展宽的数据及观察到的粒径。
表2
CO% | FWHM*(2θ°) | 线展宽(Bn/B0) | 晶粒形状 | 粒径(nm) |
0.0 | 1.50(B0) | 1.0 | 柱状 | 250** |
4.0 | 0.209 | 1.39 | 柱状 | 150** |
6.0 | 0.330 | 2.20 | 柱状/等轴 | 50*** |
8.0 | 0.359(Bn) | 2.39 | 等轴 | 10 |
*半峰宽度,由单一MTCVD Ti(C,N)涂层的220反射面的Kα2分解高斯线测得。
**柱状晶粒的平均宽度。注意其长度通常在涂层厚度的数量级。
***柱状晶粒和等轴晶粒的混合物。没有发现接近涂层厚度的柱状晶粒。
参比样的半峰宽度为B0。
纳米晶涂层参比样的半峰宽度为Bn(n=4.0,6.0,8.0)。
线展宽为Bn/B0。
线展宽可以用绝对值(°2θ)来定义,也可以用相对值来定义。线展宽应当为0.30-0.60°2θ,优选为0.33-0.4°2θ,或者应当为2.0-4.0,优选为2.2-2.7(相对值,参比样为MTCVD Ti(C,N))。
在这种情况下,线展宽两种定义的特征是涂层处于轻微的拉伸应力下。因而线展宽只与粒径有关,而与压缩应力无关,如在PVD涂层中较小的粒径所出现的压缩压力。硬度
涂层1,3,4,5的硬度用纳米硬度计技术测量。结果列于表3中。
表3
涂层化学(掺入氧)
CO% | 硬度 | |
涂层1 | 0 | 26 |
涂层3 | 4.0 | 28 |
涂层4 | 6.0 | 29 |
涂层5 | 8.0 | 34 |
实验表明,通过掺合,可以在涂层中掺入相当量的氧,见表4。很清楚涂层中碳组份是主要的,其不受CO添加量增加的影响。氮含量减小,而氧组份含量急剧增加。不过没有发现钛的氧化物(Magnelli相)。涂层的化学计量从0.88增至1.03。
表4
摩擦
组份 | 涂层1 | 涂层3 | 涂层4 | 涂层5 |
C/Ti | 0.55 | 0.54 | 0.54 | 0.54 |
N/Ti | 0.33 | 0.28 | 0.24 | 0.21 |
O/Ti | 0.00 | 0.04 | 0.18 | 0.28 |
(C+N+O)/Ti | 0.88 | 0.86 | 0.96 | 1.03 |
用栓钉盘(pin-on disk)技术测定钢(SS1672)和实验涂层之间的摩擦系数。表5证实了摩擦的减小。
表5
CO% | 摩擦系数 | |
涂层1 | 0 | 0.45 |
涂层3 | 4.0 | 0.45 |
涂层4 | 6.0 | 0.41 |
涂层5 | 8.0 | 0.32 |
将涂层1、3、4和5的单个涂层沉积于车刀刀体(SNUN120408)和铣刀刀体(SEKN1203 AFN)上。所有涂层的厚度均为6μm。从表6中可以清楚地看到,单一纳米晶层(涂层5)在较低的车旋切削速度下具有良好的耐磨性能。在较高的切削速度下,由于塑性变形,该涂层不成功,但与没有进行添加的涂层相比(涂层1),其月牙缺口、边层磨损和涂层剥落要明显地少。在铣削操作中(此时为中速),纳米晶涂层(涂层5)具有明显较长的寿命,刀刃强度也得以提高(耐剥落),见表7。
从所得的结果可以清楚地看到,在Ti(C,N)、TiN、TiC、Al2O3或其组合层之上涂覆纳米晶层的组合,会得到明显增强的耐磨性能,特别是考虑到高速车削和铣削耐剥落时。
表6
车削不锈钢(SS 2333) | ||
185m/min下的寿命(min) | 250m/min下的寿命(min) | |
涂层1 | 22 | 16 |
涂层3 | 22 | 17 |
涂层4 | 25 | 14 |
涂层5 | 31 | 9 |
寿命标准:表面磨光或侧边磨损
送进:0.2毫米/齿
切削深度:2.5毫米
表7
铣削(不锈钢SS 2333) | ||
切削长度(毫米) | 剥落% | |
涂层1 | 3400 | 12 |
涂层3 | 3350 | 9 |
涂层4 | 3800 | 9 |
涂层5 | 4200 | 4 |
切削速度:200m/min
送进:0.2毫米/齿
切削深度:2.5毫米
实施例2
在MTCVD法的Ti(C,N)涂层之上和Ti(C,N)-Al2O3复合涂层之上再涂覆纳米晶涂层。涂层的组合见表8。涂层1-4沉积于车刀刀体(SNUN120408)和铣刀刀体(SEKN1203 AFN)上。
表8
Ti(C,N) | Al2O3 | 等轴纳米 | 粒径 | |
涂层1 | 6μm | - | - | - |
涂层2 | 4μm | - | 2 | 10nm |
涂层3 | 4μm | 4μm | - | - |
涂层4 | 4μm | 4μm | 2 | 10nm |
表9
碳钢,SS1672 | ||
185m/min下的寿命(min) | 250m/min下的寿命(min) | |
涂层1 | 25 | 16 |
涂层2 | 28 | 18 |
寿命标准:ISO 3685
表10
不锈钢,SS2333 | ||
220m/min下的寿命(min) | 刀刃剥落(%)** | |
涂层3 | 12* | 22 |
涂层4 | 19 | 8 |
*寿命标准:ISO 3685
**4分钟车削之后
表11
铸铁,SS1672 | ||
220m/min下的寿命(min) | 刀刃剥落(%)** | |
涂层3 | 15* | 16 |
涂层4 | 16 | 11 |
*寿命标准:ISO 3685
**4分钟车削之后
表12
面铣削(SS2377) | ||
切削长度(mm) | 剥落%** | |
涂层1 | 3400* | 20 |
涂层2 | 3350 | 15 |
涂层3 | 3800 | 32 |
涂层4 | 4200 | 16 |
切削速度:80m/min
送进:0.6毫米/齿
切削深度:6毫米
湿铣削
*寿命标准:表面磨光
**1800mm之后
前面的说明书已原则上描述了实施本发明优选的方案和模式。然而,此处要进行保护的范围并不局限于所公开的特定方式,因为这些方式只是用来说明的,而不是用来限制的。本领域的熟练人员完全可以进行改良或改变而不超出本发明的精神。
Claims (31)
1、一种具有涂层的涂覆刀体,所述的涂层是粒径为25nm或更低的Ti(C,N,O)涂层。
2、如权利要求1所述的涂覆碳化物的刀体,其中,所述的Ti(C,N,O)涂层涂覆成最外层。
3、如权利要求2的涂覆刀体,其中,Ti(C,N,O)涂层涂覆于Ti(C,N)层、Ti(Al,N)层、κ-Al2O3层、α-Al2O3层或其混合物层之上。
4、如权利要求3的涂覆刀体,其中,所述的涂层是用MTCVD法涂覆的。
5、如权利要求3的涂覆刀体,其中,所述的Ti(C,N,O)涂层是用MTCVD法涂覆的。
6、如权利要求3的涂覆刀体,其中,所述的Ti(C,N,O)涂层涂覆于Al2O3层之上,而Al2O3层本身又涂覆于Ti(C,N)层之上。
7、如权利要求6的涂覆刀体,其中,所述的Al2O3层是α-Al2O3层。
8、如权利要求6的涂覆刀体,其中,所述的Al2O3层是κ-Al2O3层。
9、如权利要求6的涂覆刀体,其中,所述的Ti(C,N)层是MTCVD法Ti(C,N)层和CVD法Ti(C,N)层的多层结构。
10、如权利要求1的涂覆刀体,其中,所述的Ti(C,N,O)涂层中,O/Ti的比例为0.10-0.40,C/Ti的比例为0.40-0.60,N/Ti的比例为0.15-0.35。
11、如权利要求3的涂覆刀体,其中,Ti(Al,N)层是用PVD法涂覆的。
12、如权利要求3的涂覆刀体,其中,Ti(C,N)层是用PVD法涂覆的。
13、如权利要求1的涂覆刀体,其中,所述的Ti(C,N)层没有压缩应力。
14、如权利要求1的涂覆刀体,其中,所述的Ti(C,N,O)涂层是内层,在其上面至少有一层其它的层。
15、如权利要求14的涂覆刀体,其中,在所述的Ti(C,N,O)涂层之上有外层,该外层包括一层或多层的Al2O3层、Ti(C,N)层和TiN层。
16、如权利要求15的涂覆刀体,其中,所述的外层是TiN层的多层结构。
17、如权利要求15的涂覆刀体,其中,所述的外层是Ti(C,N)层的多层结构。
18、如权利要求15的涂覆刀体,其中,所述的外层是Al2O3层的多层结构。
19、如权利要求18的涂覆刀体,其中,所述的Al2O3层是κ-Al2O3层。
20、如权利要求1的涂覆刀体,其中,所述的刀体包括硬质合金、金属陶瓷或陶瓷。
21、如权利要求2的涂覆刀体,其中,所述涂层的x-射线衍射半峰宽度至少为Ti(C,N)层的两倍。
22、如权利要求21的涂覆刀体,其中,所述涂层的x-射线衍射半峰宽度为Ti(C,N)层的2.25-2.50倍。
23、一种形成具有Ti(C,N,O)涂层的涂覆刀体的方法,包括将刀体与含有卤化钛、氮化合物、碳化合物、还原剂以及CO和/或CO2的添加剂的气体接触,使得足以形成粒径小于25nm的Ti(C,N,O)。
24、如权利要求23的方法,其中,所述的卤化物是四氯化钛。
25、如权利要求24的方法,其中,所述的氮和碳是由同一化合物提供的。
26、如权利要求25的方法,其中,氮和碳的化合物是CH3CN。
27、如权利要求23的方法,其中,所述的添加剂是CO。
28、如权利要求23的方法,其中,所述的添加剂是CO2。
29、如权利要求27的方法,其中,CO占气体混合物总量的5%-10%。
30、如权利要求28的方法,其中,CO2占气体混合物总量的0.5%-1.0%。
31、如权利要求23的方法,其中,所述的涂覆是在700-900℃下进行的。
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US09/487,495 | 2000-01-19 | ||
US09/487,495 US6472060B1 (en) | 2000-01-19 | 2000-01-19 | Coated body with nanocrystalline CVD coating for enhanced edge toughness and reduced friction |
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CN1305880A true CN1305880A (zh) | 2001-08-01 |
CN1262391C CN1262391C (zh) | 2006-07-05 |
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Country Status (5)
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US (3) | US6472060B1 (zh) |
EP (1) | EP1118688A1 (zh) |
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KR (1) | KR100759073B1 (zh) |
CN (1) | CN1262391C (zh) |
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-
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-
2001
- 2001-01-04 EP EP01850003A patent/EP1118688A1/en not_active Withdrawn
- 2001-01-18 JP JP2001010232A patent/JP2001234344A/ja active Pending
- 2001-01-18 KR KR1020010002811A patent/KR100759073B1/ko not_active IP Right Cessation
- 2001-01-19 CN CNB011030364A patent/CN1262391C/zh not_active Expired - Fee Related
- 2001-08-08 US US09/923,968 patent/US6652913B2/en not_active Expired - Fee Related
-
2002
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100554538C (zh) * | 2004-01-19 | 2009-10-28 | 里特机械公司 | 精梳机棉网引导装置 |
CN110678579A (zh) * | 2017-06-20 | 2020-01-10 | 山特维克知识产权股份有限公司 | 涂层切削工具 |
CN110678579B (zh) * | 2017-06-20 | 2021-12-10 | 山特维克知识产权股份有限公司 | 涂层切削工具 |
Also Published As
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US20030054159A1 (en) | 2003-03-20 |
CN1262391C (zh) | 2006-07-05 |
JP2001234344A (ja) | 2001-08-31 |
US6472060B1 (en) | 2002-10-29 |
KR20010074518A (ko) | 2001-08-04 |
KR100759073B1 (ko) | 2007-09-19 |
EP1118688A1 (en) | 2001-07-25 |
US6652913B2 (en) | 2003-11-25 |
US20020012818A1 (en) | 2002-01-31 |
US6620498B2 (en) | 2003-09-16 |
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