CN1286116C - 通过双向电流写入数据的薄膜磁体存储装置 - Google Patents
通过双向电流写入数据的薄膜磁体存储装置 Download PDFInfo
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- CN1286116C CN1286116C CNB021593892A CN02159389A CN1286116C CN 1286116 C CN1286116 C CN 1286116C CN B021593892 A CNB021593892 A CN B021593892A CN 02159389 A CN02159389 A CN 02159389A CN 1286116 C CN1286116 C CN 1286116C
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- 230000002457 bidirectional effect Effects 0.000 title description 2
- 230000004044 response Effects 0.000 claims abstract description 37
- 230000005415 magnetization Effects 0.000 claims description 53
- 230000008878 coupling Effects 0.000 claims description 36
- 238000010168 coupling process Methods 0.000 claims description 36
- 238000005859 coupling reaction Methods 0.000 claims description 36
- 230000033228 biological regulation Effects 0.000 claims description 13
- 230000000295 complement effect Effects 0.000 claims description 10
- 108010032595 Antibody Binding Sites Proteins 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 86
- 238000009826 distribution Methods 0.000 description 36
- 230000004913 activation Effects 0.000 description 27
- 230000037361 pathway Effects 0.000 description 20
- 101100437991 Oryza sativa subsp. japonica BURP17 gene Proteins 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 18
- 230000009471 action Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 101000801058 Homo sapiens TM2 domain-containing protein 2 Proteins 0.000 description 5
- 102100033691 TM2 domain-containing protein 2 Human genes 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 102100026329 Ciliogenesis and planar polarity effector 2 Human genes 0.000 description 3
- 101100329534 Haloarcula marismortui (strain ATCC 43049 / DSM 3752 / JCM 8966 / VKM B-1809) csg1 gene Proteins 0.000 description 3
- 101000855378 Homo sapiens Ciliogenesis and planar polarity effector 2 Proteins 0.000 description 3
- 101100431670 Rattus norvegicus Ybx3 gene Proteins 0.000 description 3
- 101100166255 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CEP3 gene Proteins 0.000 description 3
- 101100385368 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CSG2 gene Proteins 0.000 description 3
- 101100422777 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SUR1 gene Proteins 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 101100293798 Mus musculus Nme1 gene Proteins 0.000 description 2
- 101150056997 RGG1 gene Proteins 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 101100354331 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) rrd-1 gene Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP394285/01 | 2001-12-26 | ||
| JP2001394285 | 2001-12-26 | ||
| JP394285/2001 | 2001-12-26 | ||
| JP2002288755A JP4262954B2 (ja) | 2001-12-26 | 2002-10-01 | 薄膜磁性体記憶装置 |
| JP288755/02 | 2002-10-01 | ||
| JP288755/2002 | 2002-10-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1430226A CN1430226A (zh) | 2003-07-16 |
| CN1286116C true CN1286116C (zh) | 2006-11-22 |
Family
ID=26625287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021593892A Expired - Fee Related CN1286116C (zh) | 2001-12-26 | 2002-12-26 | 通过双向电流写入数据的薄膜磁体存储装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4262954B2 (de) |
| KR (1) | KR100518644B1 (de) |
| CN (1) | CN1286116C (de) |
| DE (1) | DE10260344B4 (de) |
| TW (1) | TW578150B (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100568542B1 (ko) * | 2004-08-19 | 2006-04-07 | 삼성전자주식회사 | 자기 램 소자의 기록방법 |
| US7508702B2 (en) * | 2007-04-17 | 2009-03-24 | Macronix International Co., Ltd. | Programming method of magnetic random access memory |
| JP2010040658A (ja) * | 2008-08-01 | 2010-02-18 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| WO2011055420A1 (ja) * | 2009-11-04 | 2011-05-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2013222285A (ja) * | 2012-04-16 | 2013-10-28 | Fujitsu Semiconductor Ltd | バス回路および半導体装置 |
| JP2018147530A (ja) * | 2017-03-03 | 2018-09-20 | 東芝メモリ株式会社 | 半導体記憶装置 |
| CN116209252B (zh) * | 2022-09-23 | 2024-02-23 | 北京超弦存储器研究院 | 存储单元、动态存储器、其读取方法及电子设备 |
| CN116209253B (zh) * | 2022-09-23 | 2024-02-20 | 北京超弦存储器研究院 | 存储单元、动态存储器、其读取方法及电子设备 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6256224B1 (en) * | 2000-05-03 | 2001-07-03 | Hewlett-Packard Co | Write circuit for large MRAM arrays |
| JP2002170377A (ja) * | 2000-09-22 | 2002-06-14 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| JP5019681B2 (ja) * | 2001-04-26 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| JP4780878B2 (ja) * | 2001-08-02 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
-
2002
- 2002-10-01 JP JP2002288755A patent/JP4262954B2/ja not_active Expired - Fee Related
- 2002-11-21 TW TW091133960A patent/TW578150B/zh not_active IP Right Cessation
- 2002-12-20 DE DE10260344A patent/DE10260344B4/de not_active Expired - Fee Related
- 2002-12-26 CN CNB021593892A patent/CN1286116C/zh not_active Expired - Fee Related
- 2002-12-26 KR KR10-2002-0083933A patent/KR100518644B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP4262954B2 (ja) | 2009-05-13 |
| JP2003257176A (ja) | 2003-09-12 |
| KR20030055167A (ko) | 2003-07-02 |
| CN1430226A (zh) | 2003-07-16 |
| DE10260344B4 (de) | 2006-06-14 |
| TW200301480A (en) | 2003-07-01 |
| KR100518644B1 (ko) | 2005-10-05 |
| TW578150B (en) | 2004-03-01 |
| DE10260344A1 (de) | 2003-07-17 |
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| C06 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: MISSUBISHI ELECTRIC CORP. Effective date: 20140416 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140416 Address after: Kawasaki, Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Missubishi Electric Co., Ltd. |
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| CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kawasaki, Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
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| CP02 | Change in the address of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061122 Termination date: 20181226 |
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| CF01 | Termination of patent right due to non-payment of annual fee |