CN1278243C - 用于合并存贮的数据项的按块擦除存储系统和方法 - Google Patents
用于合并存贮的数据项的按块擦除存储系统和方法 Download PDFInfo
- Publication number
- CN1278243C CN1278243C CNB028149815A CN02814981A CN1278243C CN 1278243 C CN1278243 C CN 1278243C CN B028149815 A CNB028149815 A CN B028149815A CN 02814981 A CN02814981 A CN 02814981A CN 1278243 C CN1278243 C CN 1278243C
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S707/00—Data processing: database and file management or data structures
- Y10S707/99951—File or database maintenance
- Y10S707/99952—Coherency, e.g. same view to multiple users
- Y10S707/99953—Recoverability
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S707/00—Data processing: database and file management or data structures
- Y10S707/99951—File or database maintenance
- Y10S707/99956—File allocation
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Studio Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP228497/2001 | 2001-07-27 | ||
| JP2001228497A JP4812192B2 (ja) | 2001-07-27 | 2001-07-27 | フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1537277A CN1537277A (zh) | 2004-10-13 |
| CN1278243C true CN1278243C (zh) | 2006-10-04 |
Family
ID=19060999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028149815A Expired - Fee Related CN1278243C (zh) | 2001-07-27 | 2002-07-23 | 用于合并存贮的数据项的按块擦除存储系统和方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7039781B2 (https=) |
| EP (1) | EP1413959A4 (https=) |
| JP (1) | JP4812192B2 (https=) |
| KR (1) | KR20040023643A (https=) |
| CN (1) | CN1278243C (https=) |
| CA (1) | CA2452441A1 (https=) |
| TW (1) | TW573250B (https=) |
| WO (1) | WO2003012647A1 (https=) |
Families Citing this family (83)
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| US7571287B2 (en) * | 2003-03-13 | 2009-08-04 | Marvell World Trade Ltd. | Multiport memory architecture, devices and systems including the same, and methods of using the same |
| JP4563715B2 (ja) * | 2003-04-29 | 2010-10-13 | 三星電子株式会社 | パーシャルコピーバック動作モードを有するフラッシュメモリ装置 |
| US8161225B2 (en) * | 2003-08-06 | 2012-04-17 | Panasonic Corporation | Semiconductor memory card, access device and method |
| CN100349138C (zh) * | 2003-08-08 | 2007-11-14 | 倚天资讯股份有限公司 | 非挥发性存储器存取系统及其循环使用存取空间方法 |
| JPWO2005029311A1 (ja) * | 2003-09-18 | 2006-11-30 | 松下電器産業株式会社 | 半導体メモリカード、半導体メモリ制御装置及び半導体メモリ制御方法 |
| CN100504812C (zh) * | 2003-11-21 | 2009-06-24 | 群联电子股份有限公司 | 随机存取闪存的控制方法 |
| US7350044B2 (en) * | 2004-01-30 | 2008-03-25 | Micron Technology, Inc. | Data move method and apparatus |
| US7490283B2 (en) | 2004-05-13 | 2009-02-10 | Sandisk Corporation | Pipelined data relocation and improved chip architectures |
| KR100568115B1 (ko) | 2004-06-30 | 2006-04-05 | 삼성전자주식회사 | 점진적 머지 방법 및 그것을 이용한 메모리 시스템 |
| DE102004040296B3 (de) | 2004-08-19 | 2006-03-02 | Giesecke & Devrient Gmbh | Schreiben von Daten in einen nichtflüchtigen Speicher eines tragbaren Datenträgers |
| JP4192129B2 (ja) * | 2004-09-13 | 2008-12-03 | 株式会社東芝 | メモリ管理装置 |
| KR100664933B1 (ko) * | 2004-12-15 | 2007-01-04 | 삼성전자주식회사 | 비휘발성 저장장치에 멀티미디어 데이터를 블록 단위로저장하는 방법 및 장치 |
| US8122193B2 (en) | 2004-12-21 | 2012-02-21 | Samsung Electronics Co., Ltd. | Storage device and user device including the same |
| US7409473B2 (en) * | 2004-12-21 | 2008-08-05 | Sandisk Corporation | Off-chip data relocation |
| US7849381B2 (en) * | 2004-12-21 | 2010-12-07 | Sandisk Corporation | Method for copying data in reprogrammable non-volatile memory |
| KR100684887B1 (ko) * | 2005-02-04 | 2007-02-20 | 삼성전자주식회사 | 플래시 메모리를 포함한 데이터 저장 장치 및 그것의 머지방법 |
| JP2006252137A (ja) * | 2005-03-10 | 2006-09-21 | Matsushita Electric Ind Co Ltd | 不揮発性記憶装置の最適化方法 |
| EP1712985A1 (en) * | 2005-04-15 | 2006-10-18 | Deutsche Thomson-Brandt Gmbh | Method and system for storing logical data blocks into flash-blocks in multiple non-volatile memories which are connected to at least one common data I/O bus |
| JP5617873B2 (ja) * | 2005-06-06 | 2014-11-05 | ソニー株式会社 | 記憶装置 |
| US7242623B2 (en) * | 2005-07-12 | 2007-07-10 | Infineon Technologies Flash Gmbh & Co. Kg | Non-volatile memory cell device, programming element and method for programming data into a plurality of non-volatile memory cells |
| US7984084B2 (en) * | 2005-08-03 | 2011-07-19 | SanDisk Technologies, Inc. | Non-volatile memory with scheduled reclaim operations |
| JP2007188552A (ja) * | 2006-01-11 | 2007-07-26 | Sharp Corp | 半導体記憶装置 |
| CN100476757C (zh) * | 2006-07-20 | 2009-04-08 | 何纯淳 | 闪速存储器的回收方法 |
| KR100849221B1 (ko) | 2006-10-19 | 2008-07-31 | 삼성전자주식회사 | 비휘발성 메모리의 관리 방법 및 비휘발성 메모리 기반의장치 |
| KR100825802B1 (ko) | 2007-02-13 | 2008-04-29 | 삼성전자주식회사 | 기입 데이터의 논리적 페이지보다 이전 논리적 페이지들을가지는 데이터들을 데이터 블록으로부터 복사하는 불휘발성메모리 장치의 데이터 기입 방법 |
| WO2008102610A1 (ja) * | 2007-02-23 | 2008-08-28 | Panasonic Corporation | メモリコントローラ、不揮発性記憶装置、及び不揮発性記憶システム |
| CN101281492B (zh) * | 2007-04-04 | 2011-02-02 | 扬智科技股份有限公司 | 恢复闪存的对照表的方法 |
| DE602008002278D1 (de) * | 2007-05-02 | 2010-10-07 | St Microelectronics Sa | Nicht flüchtiger Speicher mit drehbaren Hilfssegmenten |
| KR101336258B1 (ko) | 2007-05-29 | 2013-12-03 | 삼성전자 주식회사 | 비휘발성 메모리의 데이터 처리 장치 및 방법 |
| US20100180072A1 (en) * | 2007-06-22 | 2010-07-15 | Shigekazu Kogita | Memory controller, nonvolatile memory device, file system, nonvolatile memory system, data writing method and data writing program |
| US8234425B1 (en) | 2007-06-27 | 2012-07-31 | Marvell International Ltd. | Arbiter module |
| US7949817B1 (en) | 2007-07-31 | 2011-05-24 | Marvell International Ltd. | Adaptive bus profiler |
| TWI381383B (zh) * | 2007-11-14 | 2013-01-01 | Netac Technology Co Ltd | 快閃記憶體的資料儲存方法 |
| JP4675985B2 (ja) | 2008-03-01 | 2011-04-27 | 株式会社東芝 | メモリシステム |
| US8131915B1 (en) | 2008-04-11 | 2012-03-06 | Marvell Intentional Ltd. | Modifying or overwriting data stored in flash memory |
| US8683085B1 (en) | 2008-05-06 | 2014-03-25 | Marvell International Ltd. | USB interface configurable for host or device mode |
| JP4461187B1 (ja) * | 2008-12-24 | 2010-05-12 | 株式会社東芝 | 不揮発性半導体メモリドライブ装置、情報処理装置および不揮発性半導体メモリドライブ装置における記憶領域の管理方法 |
| TWI402747B (zh) * | 2009-02-17 | 2013-07-21 | E Ten Information Sys Co Ltd | 合併資料的方法及其電子裝置與電腦程式產品 |
| JP2010211618A (ja) * | 2009-03-11 | 2010-09-24 | Toshiba Corp | 半導体記憶装置 |
| US8423710B1 (en) | 2009-03-23 | 2013-04-16 | Marvell International Ltd. | Sequential writes to flash memory |
| US8213236B1 (en) | 2009-04-21 | 2012-07-03 | Marvell International Ltd. | Flash memory |
| TWI455133B (zh) | 2009-05-26 | 2014-10-01 | Silicon Motion Inc | 用來管理一快閃記憶體的複數個區塊之方法以及相關之記憶裝置及其控制器 |
| US8102705B2 (en) | 2009-06-05 | 2012-01-24 | Sandisk Technologies Inc. | Structure and method for shuffling data within non-volatile memory devices |
| US8027195B2 (en) * | 2009-06-05 | 2011-09-27 | SanDisk Technologies, Inc. | Folding data stored in binary format into multi-state format within non-volatile memory devices |
| US20110002169A1 (en) * | 2009-07-06 | 2011-01-06 | Yan Li | Bad Column Management with Bit Information in Non-Volatile Memory Systems |
| US8468294B2 (en) * | 2009-12-18 | 2013-06-18 | Sandisk Technologies Inc. | Non-volatile memory with multi-gear control using on-chip folding of data |
| US8725935B2 (en) | 2009-12-18 | 2014-05-13 | Sandisk Technologies Inc. | Balanced performance for on-chip folding of non-volatile memories |
| US8144512B2 (en) * | 2009-12-18 | 2012-03-27 | Sandisk Technologies Inc. | Data transfer flows for on-chip folding |
| US8688922B1 (en) | 2010-03-11 | 2014-04-01 | Marvell International Ltd | Hardware-supported memory management |
| JP5404483B2 (ja) * | 2010-03-17 | 2014-01-29 | 株式会社東芝 | メモリシステム |
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| KR101734200B1 (ko) * | 2010-12-03 | 2017-05-11 | 삼성전자주식회사 | 적응적 머지를 수행하는 메모리 시스템 및 그것의 데이터 쓰기 방법 |
| TWI553654B (zh) * | 2010-12-16 | 2016-10-11 | 群聯電子股份有限公司 | 資料管理方法、記憶體控制器與記憶體儲存裝置 |
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| US9396106B2 (en) * | 2011-05-12 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
| JP5801158B2 (ja) * | 2011-10-21 | 2015-10-28 | ラピスセミコンダクタ株式会社 | Ram記憶装置 |
| TWI447646B (zh) | 2011-11-18 | 2014-08-01 | Asmedia Technology Inc | 資料傳輸裝置及多個指令的整合方法 |
| US8924636B2 (en) | 2012-02-23 | 2014-12-30 | Kabushiki Kaisha Toshiba | Management information generating method, logical block constructing method, and semiconductor memory device |
| JP2013174975A (ja) | 2012-02-23 | 2013-09-05 | Toshiba Corp | メモリシステムとそのデータ書き込み方法 |
| US8842473B2 (en) | 2012-03-15 | 2014-09-23 | Sandisk Technologies Inc. | Techniques for accessing column selecting shift register with skipped entries in non-volatile memories |
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| US9116792B2 (en) * | 2012-05-18 | 2015-08-25 | Silicon Motion, Inc. | Data storage device and method for flash block management |
| KR101997572B1 (ko) * | 2012-06-01 | 2019-07-09 | 삼성전자주식회사 | 불휘발성 메모리 장치를 포함하는 저장 장치 및 그것의 쓰기 방법 |
| KR102147359B1 (ko) | 2012-06-29 | 2020-08-24 | 삼성전자 주식회사 | 비휘발성 메모리 장치의 관리 방법 및 비휘발성 메모리 장치 |
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| CN105573661B (zh) * | 2014-10-15 | 2018-11-09 | 群联电子股份有限公司 | 数据写入方法、存储器存储装置及存储器控制电路单元 |
| CN104331266B (zh) * | 2014-10-22 | 2018-04-27 | 安徽皖通邮电股份有限公司 | 一种实现任意数据位宽转换的方法和装置 |
| US9934872B2 (en) | 2014-10-30 | 2018-04-03 | Sandisk Technologies Llc | Erase stress and delta erase loop count methods for various fail modes in non-volatile memory |
| KR102282952B1 (ko) | 2014-12-15 | 2021-07-30 | 삼성전자주식회사 | 스토리지 장치의 동작 방법 |
| KR102211868B1 (ko) | 2014-12-15 | 2021-02-04 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
| US9224502B1 (en) | 2015-01-14 | 2015-12-29 | Sandisk Technologies Inc. | Techniques for detection and treating memory hole to local interconnect marginality defects |
| US10032524B2 (en) | 2015-02-09 | 2018-07-24 | Sandisk Technologies Llc | Techniques for determining local interconnect defects |
| US9269446B1 (en) | 2015-04-08 | 2016-02-23 | Sandisk Technologies Inc. | Methods to improve programming of slow cells |
| US9564219B2 (en) | 2015-04-08 | 2017-02-07 | Sandisk Technologies Llc | Current based detection and recording of memory hole-interconnect spacing defects |
| TWI620115B (zh) * | 2015-06-17 | 2018-04-01 | 旺宏電子股份有限公司 | 用於寫入資料的方法及設備與儲存媒體 |
| CN106648443B (zh) * | 2015-10-30 | 2019-06-25 | 群联电子股份有限公司 | 有效数据合并方法、存储器控制器与存储器存储装置 |
| US10546644B2 (en) * | 2017-12-29 | 2020-01-28 | Gigadevice Semiconductor (Beijing) Inc. | NAND flash memory and method for destroying information from the NAND flash memory |
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| TWI880534B (zh) * | 2023-12-19 | 2025-04-11 | 群聯電子股份有限公司 | 資料寫入方法、記憶體儲存裝置及記憶體控制電路單元 |
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| JP3407317B2 (ja) * | 1991-11-28 | 2003-05-19 | 株式会社日立製作所 | フラッシュメモリを使用した記憶装置 |
| JPH06222985A (ja) * | 1993-01-26 | 1994-08-12 | Oki Electric Ind Co Ltd | メモリ制御装置 |
| JPH06301601A (ja) | 1993-04-16 | 1994-10-28 | Sony Corp | 情報記録装置及び情報転送装置 |
| WO1994024624A1 (fr) * | 1993-04-16 | 1994-10-27 | Sony Corporation | Appareil d'enregistrement d'informations et appareil de transfert d'informations |
| JP3215237B2 (ja) * | 1993-10-01 | 2001-10-02 | 富士通株式会社 | 記憶装置および記憶装置の書き込み/消去方法 |
| JPH07219720A (ja) * | 1993-10-01 | 1995-08-18 | Hitachi Maxell Ltd | 半導体メモリ装置ならびにその制御方法 |
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| US5933847A (en) * | 1995-09-28 | 1999-08-03 | Canon Kabushiki Kaisha | Selecting erase method based on type of power supply for flash EEPROM |
| JP3702515B2 (ja) * | 1995-12-04 | 2005-10-05 | 富士通株式会社 | フラッシュメモリ制御方法及びフラッシュメモリ制御ユニット |
| JPH10124384A (ja) * | 1996-08-28 | 1998-05-15 | Toshiba Corp | 不揮発性半導体メモリの制御方法 |
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| JP3534585B2 (ja) * | 1997-10-21 | 2004-06-07 | 株式会社日立製作所 | フラッシュメモリを複数使用した外部記憶装置のデータ記憶制御方法及び装置 |
| US6622199B1 (en) * | 1999-07-02 | 2003-09-16 | Qualcomm Incorporated | Method for minimizing data relocation overhead in flash based file systems |
-
2001
- 2001-07-27 JP JP2001228497A patent/JP4812192B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-23 KR KR10-2004-7000299A patent/KR20040023643A/ko not_active Withdrawn
- 2002-07-23 US US10/481,921 patent/US7039781B2/en not_active Expired - Fee Related
- 2002-07-23 CA CA002452441A patent/CA2452441A1/en not_active Abandoned
- 2002-07-23 WO PCT/JP2002/007456 patent/WO2003012647A1/ja not_active Ceased
- 2002-07-23 EP EP02749352A patent/EP1413959A4/en not_active Withdrawn
- 2002-07-23 CN CNB028149815A patent/CN1278243C/zh not_active Expired - Fee Related
- 2002-07-26 TW TW091116758A patent/TW573250B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1413959A1 (en) | 2004-04-28 |
| CA2452441A1 (en) | 2003-02-13 |
| US20040193774A1 (en) | 2004-09-30 |
| JP2003044351A (ja) | 2003-02-14 |
| CN1537277A (zh) | 2004-10-13 |
| US7039781B2 (en) | 2006-05-02 |
| KR20040023643A (ko) | 2004-03-18 |
| WO2003012647A1 (en) | 2003-02-13 |
| TW573250B (en) | 2004-01-21 |
| EP1413959A4 (en) | 2007-10-10 |
| JP4812192B2 (ja) | 2011-11-09 |
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