WO2003012647A1 - Appareil a memoire flash et procede de fusion de donnees stockees dans celle-ci - Google Patents
Appareil a memoire flash et procede de fusion de donnees stockees dans celle-ci Download PDFInfo
- Publication number
- WO2003012647A1 WO2003012647A1 PCT/JP2002/007456 JP0207456W WO03012647A1 WO 2003012647 A1 WO2003012647 A1 WO 2003012647A1 JP 0207456 W JP0207456 W JP 0207456W WO 03012647 A1 WO03012647 A1 WO 03012647A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- flash memory
- memory apparatus
- unit
- page
- physical block
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S707/00—Data processing: database and file management or data structures
- Y10S707/99951—File or database maintenance
- Y10S707/99952—Coherency, e.g. same view to multiple users
- Y10S707/99953—Recoverability
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S707/00—Data processing: database and file management or data structures
- Y10S707/99951—File or database maintenance
- Y10S707/99956—File allocation
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
- Studio Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/481,921 US7039781B2 (en) | 2001-07-27 | 2002-07-23 | Flash memory apparatus and method for merging stored data items |
CA002452441A CA2452441A1 (en) | 2001-07-27 | 2002-07-23 | Flash memory system and method for merging the stored data items |
EP02749352A EP1413959A4 (en) | 2001-07-27 | 2002-07-23 | FLASH MEMORY DEVICE AND METHOD FOR COMBINING DATA STORED THEREIN |
KR10-2004-7000299A KR20040023643A (ko) | 2001-07-27 | 2002-07-23 | 플래시 메모리장치 및 그것에 기억된 데이터의 머지방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-228497 | 2001-07-27 | ||
JP2001228497A JP4812192B2 (ja) | 2001-07-27 | 2001-07-27 | フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003012647A1 true WO2003012647A1 (fr) | 2003-02-13 |
Family
ID=19060999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/007456 WO2003012647A1 (fr) | 2001-07-27 | 2002-07-23 | Appareil a memoire flash et procede de fusion de donnees stockees dans celle-ci |
Country Status (8)
Country | Link |
---|---|
US (1) | US7039781B2 (ja) |
EP (1) | EP1413959A4 (ja) |
JP (1) | JP4812192B2 (ja) |
KR (1) | KR20040023643A (ja) |
CN (1) | CN1278243C (ja) |
CA (1) | CA2452441A1 (ja) |
TW (1) | TW573250B (ja) |
WO (1) | WO2003012647A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100349138C (zh) * | 2003-08-08 | 2007-11-14 | 倚天资讯股份有限公司 | 非挥发性存储器存取系统及其循环使用存取空间方法 |
Families Citing this family (78)
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JP4563715B2 (ja) * | 2003-04-29 | 2010-10-13 | 三星電子株式会社 | パーシャルコピーバック動作モードを有するフラッシュメモリ装置 |
US8161225B2 (en) * | 2003-08-06 | 2012-04-17 | Panasonic Corporation | Semiconductor memory card, access device and method |
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US7490283B2 (en) | 2004-05-13 | 2009-02-10 | Sandisk Corporation | Pipelined data relocation and improved chip architectures |
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DE102004040296B3 (de) | 2004-08-19 | 2006-03-02 | Giesecke & Devrient Gmbh | Schreiben von Daten in einen nichtflüchtigen Speicher eines tragbaren Datenträgers |
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JP5617873B2 (ja) * | 2005-06-06 | 2014-11-05 | ソニー株式会社 | 記憶装置 |
US7242623B2 (en) * | 2005-07-12 | 2007-07-10 | Infineon Technologies Flash Gmbh & Co. Kg | Non-volatile memory cell device, programming element and method for programming data into a plurality of non-volatile memory cells |
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KR100825802B1 (ko) | 2007-02-13 | 2008-04-29 | 삼성전자주식회사 | 기입 데이터의 논리적 페이지보다 이전 논리적 페이지들을가지는 데이터들을 데이터 블록으로부터 복사하는 불휘발성메모리 장치의 데이터 기입 방법 |
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JP4675985B2 (ja) | 2008-03-01 | 2011-04-27 | 株式会社東芝 | メモリシステム |
US8131915B1 (en) | 2008-04-11 | 2012-03-06 | Marvell Intentional Ltd. | Modifying or overwriting data stored in flash memory |
US8683085B1 (en) | 2008-05-06 | 2014-03-25 | Marvell International Ltd. | USB interface configurable for host or device mode |
JP4461187B1 (ja) * | 2008-12-24 | 2010-05-12 | 株式会社東芝 | 不揮発性半導体メモリドライブ装置、情報処理装置および不揮発性半導体メモリドライブ装置における記憶領域の管理方法 |
TWI402747B (zh) * | 2009-02-17 | 2013-07-21 | E Ten Information Sys Co Ltd | 合併資料的方法及其電子裝置與電腦程式產品 |
JP2010211618A (ja) * | 2009-03-11 | 2010-09-24 | Toshiba Corp | 半導体記憶装置 |
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US8213236B1 (en) | 2009-04-21 | 2012-07-03 | Marvell International Ltd. | Flash memory |
TWI455133B (zh) | 2009-05-26 | 2014-10-01 | Silicon Motion Inc | 用來管理一快閃記憶體的複數個區塊之方法以及相關之記憶裝置及其控制器 |
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US20110002169A1 (en) | 2009-07-06 | 2011-01-06 | Yan Li | Bad Column Management with Bit Information in Non-Volatile Memory Systems |
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KR101997572B1 (ko) * | 2012-06-01 | 2019-07-09 | 삼성전자주식회사 | 불휘발성 메모리 장치를 포함하는 저장 장치 및 그것의 쓰기 방법 |
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CN105573661B (zh) * | 2014-10-15 | 2018-11-09 | 群联电子股份有限公司 | 数据写入方法、存储器存储装置及存储器控制电路单元 |
CN104331266B (zh) * | 2014-10-22 | 2018-04-27 | 安徽皖通邮电股份有限公司 | 一种实现任意数据位宽转换的方法和装置 |
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KR102282952B1 (ko) | 2014-12-15 | 2021-07-30 | 삼성전자주식회사 | 스토리지 장치의 동작 방법 |
KR102211868B1 (ko) | 2014-12-15 | 2021-02-04 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
US9224502B1 (en) | 2015-01-14 | 2015-12-29 | Sandisk Technologies Inc. | Techniques for detection and treating memory hole to local interconnect marginality defects |
US10032524B2 (en) | 2015-02-09 | 2018-07-24 | Sandisk Technologies Llc | Techniques for determining local interconnect defects |
US9564219B2 (en) | 2015-04-08 | 2017-02-07 | Sandisk Technologies Llc | Current based detection and recording of memory hole-interconnect spacing defects |
US9269446B1 (en) | 2015-04-08 | 2016-02-23 | Sandisk Technologies Inc. | Methods to improve programming of slow cells |
TWI620115B (zh) * | 2015-06-17 | 2018-04-01 | 旺宏電子股份有限公司 | 用於寫入資料的方法及設備與儲存媒體 |
CN106648443B (zh) * | 2015-10-30 | 2019-06-25 | 群联电子股份有限公司 | 有效数据合并方法、存储器控制器与存储器存储装置 |
US10546644B2 (en) * | 2017-12-29 | 2020-01-28 | Gigadevice Semiconductor (Beijing) Inc. | NAND flash memory and method for destroying information from the NAND flash memory |
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2001
- 2001-07-27 JP JP2001228497A patent/JP4812192B2/ja not_active Expired - Fee Related
-
2002
- 2002-07-23 KR KR10-2004-7000299A patent/KR20040023643A/ko not_active Application Discontinuation
- 2002-07-23 CA CA002452441A patent/CA2452441A1/en not_active Abandoned
- 2002-07-23 US US10/481,921 patent/US7039781B2/en not_active Expired - Fee Related
- 2002-07-23 WO PCT/JP2002/007456 patent/WO2003012647A1/ja active Application Filing
- 2002-07-23 EP EP02749352A patent/EP1413959A4/en not_active Withdrawn
- 2002-07-23 CN CNB028149815A patent/CN1278243C/zh not_active Expired - Fee Related
- 2002-07-26 TW TW091116758A patent/TW573250B/zh not_active IP Right Cessation
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JPH07105691A (ja) * | 1993-10-01 | 1995-04-21 | Fujitsu Ltd | 記憶装置の書き込み/消去および管理方法 |
JPH0997207A (ja) * | 1995-09-28 | 1997-04-08 | Canon Inc | フラッシュrom管理方法及び装置及びコンピュータ制御装置 |
JPH09161491A (ja) * | 1995-12-04 | 1997-06-20 | Fujitsu Ltd | フラッシュメモリ制御方法及びフラッシュメモリ制御ユニット |
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Non-Patent Citations (1)
Title |
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See also references of EP1413959A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100349138C (zh) * | 2003-08-08 | 2007-11-14 | 倚天资讯股份有限公司 | 非挥发性存储器存取系统及其循环使用存取空间方法 |
Also Published As
Publication number | Publication date |
---|---|
US7039781B2 (en) | 2006-05-02 |
KR20040023643A (ko) | 2004-03-18 |
CA2452441A1 (en) | 2003-02-13 |
EP1413959A1 (en) | 2004-04-28 |
JP4812192B2 (ja) | 2011-11-09 |
CN1278243C (zh) | 2006-10-04 |
CN1537277A (zh) | 2004-10-13 |
US20040193774A1 (en) | 2004-09-30 |
EP1413959A4 (en) | 2007-10-10 |
JP2003044351A (ja) | 2003-02-14 |
TW573250B (en) | 2004-01-21 |
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