CN1276522C - 产生辐射的半导体芯片和发光二极管 - Google Patents

产生辐射的半导体芯片和发光二极管 Download PDF

Info

Publication number
CN1276522C
CN1276522C CNB01814019XA CN01814019A CN1276522C CN 1276522 C CN1276522 C CN 1276522C CN B01814019X A CNB01814019X A CN B01814019XA CN 01814019 A CN01814019 A CN 01814019A CN 1276522 C CN1276522 C CN 1276522C
Authority
CN
China
Prior art keywords
semiconductor chip
substrate
active layer
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB01814019XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1446380A (zh
Inventor
J·保尔
D·埃泽尔特
M·费雷尔
B·哈恩
V·海勒
U·雅各布
W·普拉斯
U·斯特劳斯
J·维尔克尔
U·策恩德尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN1446380A publication Critical patent/CN1446380A/zh
Application granted granted Critical
Publication of CN1276522C publication Critical patent/CN1276522C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CNB01814019XA 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管 Expired - Lifetime CN1276522C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10039433.7 2000-08-11
DE10039433.7A DE10039433B4 (de) 2000-08-11 2000-08-11 Halbleiterchip für die Optoelektronik

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101059281A Division CN100541841C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管

Publications (2)

Publication Number Publication Date
CN1446380A CN1446380A (zh) 2003-10-01
CN1276522C true CN1276522C (zh) 2006-09-20

Family

ID=7652222

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2006101059281A Expired - Lifetime CN100541841C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管
CNB01814019XA Expired - Lifetime CN1276522C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNB2006101059281A Expired - Lifetime CN100541841C (zh) 2000-08-11 2001-07-24 产生辐射的半导体芯片和发光二极管

Country Status (7)

Country Link
US (1) US6891199B2 (enExample)
EP (1) EP1307927B1 (enExample)
JP (2) JP2004507095A (enExample)
CN (2) CN100541841C (enExample)
DE (2) DE10039433B4 (enExample)
TW (1) TW502464B (enExample)
WO (1) WO2002015287A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10019665A1 (de) * 2000-04-19 2001-10-31 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip und Verfahren zu dessen Herstellung
JP4294295B2 (ja) 2002-11-06 2009-07-08 株式会社小糸製作所 車両用前照灯
US6869812B1 (en) * 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
ITTO20030610A1 (it) * 2003-08-05 2005-02-06 Fiat Ricerche Disposizione di illuminamento a profondita' ridotta per
KR20050034936A (ko) * 2003-10-10 2005-04-15 삼성전기주식회사 형광체를 이용한 파장변환형 발광 다이오드 패키지 및제조방법
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
JP4599111B2 (ja) * 2004-07-30 2010-12-15 スタンレー電気株式会社 灯具光源用ｌｅｄランプ
GB2417126A (en) * 2004-08-09 2006-02-15 Qinetiq Ltd Method for fabricating lateral semiconductor device
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
JP2007201361A (ja) * 2006-01-30 2007-08-09 Shinko Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
KR100735311B1 (ko) * 2006-04-21 2007-07-04 삼성전기주식회사 발광 다이오드 칩
JP2008016565A (ja) * 2006-07-04 2008-01-24 Shinko Electric Ind Co Ltd 発光素子収容体及びその製造方法、及び発光装置
TW200810148A (en) * 2006-08-09 2008-02-16 Everlight Electronics Co Ltd Side-emitting diode package
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
WO2009048076A1 (ja) * 2007-10-09 2009-04-16 Alps Electric Co., Ltd. 半導体発光装置
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5182231B2 (ja) * 2009-06-09 2013-04-17 豊田合成株式会社 Ｌｅｄランプ
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
CN101692475A (zh) * 2009-10-26 2010-04-07 无锡瑞威光电科技有限公司 非正方形led芯片的组合式封装方法
CN101976715B (zh) * 2010-10-05 2011-10-05 厦门市三安光电科技有限公司 倒梯形铝镓铟磷系发光二极管的制作工艺
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
JP6574768B2 (ja) * 2013-07-26 2019-09-11 ルミレッズ ホールディング ベーフェー 内部高屈折率ピラーを有するｌｅｄドーム

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576586A (en) * 1968-08-05 1971-04-27 Bell & Howell Co Variable area injection luminescent device
JPS5113621B2 (enExample) * 1972-08-10 1976-05-01
JPS552751B2 (enExample) * 1972-08-16 1980-01-22
JPS4990494A (enExample) * 1972-12-28 1974-08-29
FR2378324A1 (fr) * 1977-01-20 1978-08-18 Radiotechnique Compelec Perfectionnement a la realisation de dispositifs d'affichage
DE2813930A1 (de) * 1978-03-31 1979-10-04 Agfa Gevaert Ag Lumineszenzdiode
JPS594088A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 発光ダイオ−ド
JPS6293985A (ja) * 1985-10-21 1987-04-30 Masayoshi Umeno 高速応答性可視光発光ダイオ−ド
JPH0531957A (ja) * 1991-05-23 1993-02-09 Canon Inc 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置
US5309001A (en) 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JPH05226781A (ja) * 1992-02-12 1993-09-03 Fujitsu Ltd 半導体発光素子の製造方法
JPH05327012A (ja) 1992-05-15 1993-12-10 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード
JPH06224469A (ja) * 1993-01-26 1994-08-12 Kyocera Corp 半導体発光装置
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JP3326545B2 (ja) * 1994-09-30 2002-09-24 ローム株式会社 半導体発光素子
JPH08139366A (ja) * 1994-11-11 1996-05-31 Ricoh Co Ltd 発光素子およびアレイ状光源並びにその製造方法および光信号送信装置
JP3153727B2 (ja) * 1995-04-11 2001-04-09 株式会社リコー スーパールミネッセントダイオード
ID16181A (id) 1995-12-25 1997-09-11 Sony Corp Alat semi konduktor dengan permukaan terbelah
JP3504079B2 (ja) 1996-08-31 2004-03-08 株式会社東芝 半導体発光ダイオード素子の製造方法
JPH10150223A (ja) 1996-11-15 1998-06-02 Rohm Co Ltd チップ型発光素子
JPH10326910A (ja) 1997-05-19 1998-12-08 Song-Jae Lee 発光ダイオードとこれを適用した発光ダイオードアレイランプ
DE59814431D1 (de) * 1997-09-29 2010-03-25 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
JP3707279B2 (ja) * 1998-03-02 2005-10-19 松下電器産業株式会社 半導体発光装置
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
JP2000208822A (ja) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP2000269551A (ja) * 1999-03-18 2000-09-29 Rohm Co Ltd チップ型発光装置
JP2002359437A (ja) * 2001-03-29 2002-12-13 Toshiba Electronic Engineering Corp 光半導体素子および光半導体素子の製造方法

Also Published As

Publication number Publication date
US20040056263A1 (en) 2004-03-25
CN1913184A (zh) 2007-02-14
US6891199B2 (en) 2005-05-10
CN100541841C (zh) 2009-09-16
TW502464B (en) 2002-09-11
DE10039433A1 (de) 2002-02-28
WO2002015287A1 (de) 2002-02-21
EP1307927B1 (de) 2010-09-22
DE50115638D1 (de) 2010-11-04
JP2004507095A (ja) 2004-03-04
EP1307927A1 (de) 2003-05-07
CN1446380A (zh) 2003-10-01
DE10039433B4 (de) 2017-10-26
JP2007073998A (ja) 2007-03-22

Similar Documents

Publication Publication Date Title
CN1276522C (zh) 产生辐射的半导体芯片和发光二极管
CN1229871C (zh) 加强光放出的微发光二极管阵列
US7015514B2 (en) Light-emitting diode and method for the production thereof
KR101238981B1 (ko) 광선방출 반도체 몸체를 포함한 모듈
JP3841092B2 (ja) 発光装置
US6768136B2 (en) Radiation emitting structural element
CN1666351A (zh) 大功率、高光通量发光二极管及其制作方法
CN102203969B (zh) 发光二极管芯片
CN101128942B (zh) Led阵列
CN1376315A (zh) 具有改善了电流的输入耦合性能的表面结构光辐射二极管
US20140167092A1 (en) Optoelectronic assembly and method for producing an optoelectronic assembly
US20120043572A1 (en) Optoelectronic Semiconductor Body
CN101809771B (zh) 具有镜层的薄膜发光二极管及其制造方法
CN114883473B (zh) 发光装置及发光设备
CN1276521C (zh) 产生辐射的半导体芯片
US6777717B1 (en) LED reflector for improved light extraction
JP6527695B2 (ja) 半導体発光装置
KR102688853B1 (ko) 반도체 소자
JP4352686B2 (ja) 反射型発光装置
KR20170062434A (ko) 반도체 발광소자
CN223007844U (zh) 半导体结构
JP7281959B2 (ja) 発光装置
CN101060148A (zh) 半导体发光装置
US20070096120A1 (en) Lateral current GaN flip chip LED with shaped transparent substrate
US11984532B2 (en) Semiconductor device having recesses forming areas

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20060920

CX01 Expiry of patent term