CN1275099C - 回收平版印刷工具中所用气体的方法和装置 - Google Patents
回收平版印刷工具中所用气体的方法和装置 Download PDFInfo
- Publication number
- CN1275099C CN1275099C CNB2004100301471A CN200410030147A CN1275099C CN 1275099 C CN1275099 C CN 1275099C CN B2004100301471 A CNB2004100301471 A CN B2004100301471A CN 200410030147 A CN200410030147 A CN 200410030147A CN 1275099 C CN1275099 C CN 1275099C
- Authority
- CN
- China
- Prior art keywords
- gas
- gases
- room
- retracting device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 189
- 238000001459 lithography Methods 0.000 claims abstract description 17
- 238000003860 storage Methods 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 230000005055 memory storage Effects 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000001307 helium Substances 0.000 claims description 11
- 229910052734 helium Inorganic materials 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 229910052724 xenon Inorganic materials 0.000 claims description 11
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052744 lithium Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052754 neon Inorganic materials 0.000 claims description 5
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 5
- 239000000284 extract Substances 0.000 claims 2
- 238000004064 recycling Methods 0.000 abstract description 2
- 238000011084 recovery Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44B—BUTTONS, PINS, BUCKLES, SLIDE FASTENERS, OR THE LIKE
- A44B15/00—Key-rings
- A44B15/005—Fobs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/392,793 | 2003-03-20 | ||
| US10/392,793 US6919573B2 (en) | 2003-03-20 | 2003-03-20 | Method and apparatus for recycling gases used in a lithography tool |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1532634A CN1532634A (zh) | 2004-09-29 |
| CN1275099C true CN1275099C (zh) | 2006-09-13 |
Family
ID=32824890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100301471A Expired - Fee Related CN1275099C (zh) | 2003-03-20 | 2004-03-19 | 回收平版印刷工具中所用气体的方法和装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6919573B2 (enExample) |
| EP (1) | EP1460479A3 (enExample) |
| JP (1) | JP3957695B2 (enExample) |
| KR (1) | KR100730675B1 (enExample) |
| CN (1) | CN1275099C (enExample) |
| SG (1) | SG115636A1 (enExample) |
| TW (1) | TW200421018A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102819194A (zh) * | 2011-06-09 | 2012-12-12 | Asml荷兰有限公司 | 辐射源和光刻设备 |
| CN102495538B (zh) * | 2007-11-30 | 2015-04-08 | Asml荷兰有限公司 | 光刻设备、投影系统和器件制造方法 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7856044B2 (en) | 1999-05-10 | 2010-12-21 | Cymer, Inc. | Extendable electrode for gas discharge laser |
| US7671349B2 (en) * | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
| US6770895B2 (en) * | 2002-11-21 | 2004-08-03 | Asml Holding N.V. | Method and apparatus for isolating light source gas from main chamber gas in a lithography tool |
| US6919573B2 (en) * | 2003-03-20 | 2005-07-19 | Asml Holding N.V | Method and apparatus for recycling gases used in a lithography tool |
| KR101123187B1 (ko) * | 2004-03-31 | 2012-03-19 | 에이에스엠엘 네델란즈 비.브이. | 단파 방사의 생성 동안 방사원에 의해 생성되는 입자를제거하기 위한 방법 및 장치 |
| US8094288B2 (en) | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4710463B2 (ja) * | 2005-07-21 | 2011-06-29 | ウシオ電機株式会社 | 極端紫外光発生装置 |
| US7696492B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
| US7894037B2 (en) * | 2007-07-30 | 2011-02-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
| US7812329B2 (en) | 2007-12-14 | 2010-10-12 | Cymer, Inc. | System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus |
| TWI402628B (zh) * | 2007-08-31 | 2013-07-21 | Cymer Inc | 控管極遠紫外線(euv)光微影裝置腔室間之氣體流動的系統 |
| US8115900B2 (en) * | 2007-09-17 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| NL1036153A1 (nl) * | 2007-11-08 | 2009-05-11 | Asml Netherlands Bv | Method and system for determining a suppression factor of a suppression system and a lithographic apparatus. |
| JP5339742B2 (ja) * | 2008-03-04 | 2013-11-13 | ウシオ電機株式会社 | 極端紫外光が出射する装置と極端紫外光が導入される装置との接続装置 |
| US8519366B2 (en) | 2008-08-06 | 2013-08-27 | Cymer, Inc. | Debris protection system having a magnetic field for an EUV light source |
| JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
| JP5578482B2 (ja) * | 2009-09-01 | 2014-08-27 | 株式会社Ihi | Lpp方式のeuv光源とその発生方法 |
| JP5578483B2 (ja) * | 2009-09-01 | 2014-08-27 | 株式会社Ihi | Lpp方式のeuv光源とその発生方法 |
| JP5687488B2 (ja) | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| US8587768B2 (en) * | 2010-04-05 | 2013-11-19 | Media Lario S.R.L. | EUV collector system with enhanced EUV radiation collection |
| US8686381B2 (en) * | 2010-06-28 | 2014-04-01 | Media Lario S.R.L. | Source-collector module with GIC mirror and tin vapor LPP target system |
| US9389180B2 (en) * | 2013-02-15 | 2016-07-12 | Kla-Tencor Corporation | Methods and apparatus for use with extreme ultraviolet light having contamination protection |
| US9585236B2 (en) | 2013-05-03 | 2017-02-28 | Media Lario Srl | Sn vapor EUV LLP source system for EUV lithography |
| WO2024044165A1 (en) * | 2022-08-24 | 2024-02-29 | Lam Research Corporation | A plasma processing system with a gas recycling system |
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| US4866517A (en) * | 1986-09-11 | 1989-09-12 | Hoya Corp. | Laser plasma X-ray generator capable of continuously generating X-rays |
| US5103102A (en) | 1989-02-24 | 1992-04-07 | Micrion Corporation | Localized vacuum apparatus and method |
| EP1026549B1 (en) | 1994-04-08 | 2007-02-28 | Canon Kabushiki Kaisha | Processing system adapted for semiconductor device manufacture |
| US6341006B1 (en) * | 1995-04-07 | 2002-01-22 | Nikon Corporation | Projection exposure apparatus |
| EP0826629B1 (en) | 1996-08-27 | 2002-11-20 | The Boc Group, Inc. | Recovery of noble gases |
| US6133577A (en) | 1997-02-04 | 2000-10-17 | Advanced Energy Systems, Inc. | Method and apparatus for producing extreme ultra-violet light for use in photolithography |
| JPH10221499A (ja) | 1997-02-07 | 1998-08-21 | Hitachi Ltd | レーザプラズマx線源およびそれを用いた半導体露光装置並びに半導体露光方法 |
| US6031241A (en) | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
| US6586757B2 (en) * | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
| US6566667B1 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
| US6064072A (en) * | 1997-05-12 | 2000-05-16 | Cymer, Inc. | Plasma focus high energy photon source |
| US6376329B1 (en) * | 1997-08-04 | 2002-04-23 | Nikon Corporation | Semiconductor wafer alignment using backside illumination |
| JPH11204411A (ja) | 1998-01-19 | 1999-07-30 | Nikon Corp | 塗布現像露光装置 |
| JP4174970B2 (ja) | 1998-05-29 | 2008-11-05 | 株式会社ニコン | レーザ励起プラズマ光源、露光装置及びその製造方法、並びにデバイス製造方法 |
| EP0981066A1 (de) | 1998-08-20 | 2000-02-23 | Gretag Imaging Ag | Lichtdichtesteuerung mittels LCD-Einrichtung |
| US6385290B1 (en) | 1998-09-14 | 2002-05-07 | Nikon Corporation | X-ray apparatus |
| JP2001108799A (ja) * | 1999-10-08 | 2001-04-20 | Nikon Corp | X線発生装置、x線露光装置及び半導体デバイスの製造方法 |
| EP1098226A3 (en) | 1999-11-05 | 2002-01-09 | Asm Lithography B.V. | Lithographic apparatus with gas flushing system |
| TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
| US6538257B2 (en) | 1999-12-23 | 2003-03-25 | Koninklijke Philips Electronics N.V. | Method of generating extremely short-wave radiation, and extremely short-wave radiation source unit |
| TW502559B (en) * | 1999-12-24 | 2002-09-11 | Koninkl Philips Electronics Nv | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
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| US6576912B2 (en) * | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
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| JPWO2002056332A1 (ja) * | 2001-01-10 | 2004-05-20 | 株式会社荏原製作所 | 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法 |
| JP2002289585A (ja) | 2001-03-26 | 2002-10-04 | Ebara Corp | 中性粒子ビーム処理装置 |
| DE10139677A1 (de) | 2001-04-06 | 2002-10-17 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung |
| DE10134033A1 (de) | 2001-04-06 | 2002-10-17 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung/weicher Röntgenstrahlung |
| EP1381919A1 (en) | 2001-04-17 | 2004-01-21 | Koninklijke Philips Electronics N.V. | Euv-transparent interface structure |
| US6895145B2 (en) * | 2001-08-02 | 2005-05-17 | Edward Ho | Apparatus and method for collecting light |
| KR20040052231A (ko) | 2001-10-12 | 2004-06-22 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 리소그래피용 투영 장치, 소자 제조 방법 및 오염 물질집진부 |
| US6762424B2 (en) * | 2002-07-23 | 2004-07-13 | Intel Corporation | Plasma generation |
| DE10238096B3 (de) | 2002-08-21 | 2004-02-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungslampe |
| US6770895B2 (en) | 2002-11-21 | 2004-08-03 | Asml Holding N.V. | Method and apparatus for isolating light source gas from main chamber gas in a lithography tool |
| DE10256663B3 (de) | 2002-12-04 | 2005-10-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungslampe für EUV-Strahlung |
| DE10310623B8 (de) | 2003-03-10 | 2005-12-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum |
| ATE476859T1 (de) | 2003-03-18 | 2010-08-15 | Koninkl Philips Electronics Nv | Einrichtung und verfahren zur erzeugung von extrem-ultraviolett-und/oder weicher röntgenstrahlung mittels eines plasmas |
| US6919573B2 (en) | 2003-03-20 | 2005-07-19 | Asml Holding N.V | Method and apparatus for recycling gases used in a lithography tool |
-
2003
- 2003-03-20 US US10/392,793 patent/US6919573B2/en not_active Expired - Lifetime
-
2004
- 2004-03-16 SG SG200401292A patent/SG115636A1/en unknown
- 2004-03-16 TW TW093106986A patent/TW200421018A/zh unknown
- 2004-03-17 JP JP2004076081A patent/JP3957695B2/ja not_active Expired - Fee Related
- 2004-03-18 EP EP04006587A patent/EP1460479A3/en not_active Withdrawn
- 2004-03-19 CN CNB2004100301471A patent/CN1275099C/zh not_active Expired - Fee Related
- 2004-03-20 KR KR1020040019132A patent/KR100730675B1/ko not_active Expired - Fee Related
-
2005
- 2005-06-29 US US11/169,016 patent/US7135693B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102495538B (zh) * | 2007-11-30 | 2015-04-08 | Asml荷兰有限公司 | 光刻设备、投影系统和器件制造方法 |
| US10310394B2 (en) | 2007-11-30 | 2019-06-04 | Asml Netherlands B.V. | Lithographic apparatus, a projection system and a device manufacturing method |
| CN102819194A (zh) * | 2011-06-09 | 2012-12-12 | Asml荷兰有限公司 | 辐射源和光刻设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3957695B2 (ja) | 2007-08-15 |
| KR20040083013A (ko) | 2004-09-30 |
| EP1460479A2 (en) | 2004-09-22 |
| CN1532634A (zh) | 2004-09-29 |
| SG115636A1 (en) | 2005-10-28 |
| KR100730675B1 (ko) | 2007-06-21 |
| JP2004289151A (ja) | 2004-10-14 |
| US20050263720A1 (en) | 2005-12-01 |
| TW200421018A (en) | 2004-10-16 |
| US6919573B2 (en) | 2005-07-19 |
| US20040183030A1 (en) | 2004-09-23 |
| US7135693B2 (en) | 2006-11-14 |
| EP1460479A3 (en) | 2006-02-01 |
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