KR100730675B1 - 리소그래피 툴에서 사용되는 가스를 재생하기 위한 방법및 장치 - Google Patents
리소그래피 툴에서 사용되는 가스를 재생하기 위한 방법및 장치 Download PDFInfo
- Publication number
- KR100730675B1 KR100730675B1 KR1020040019132A KR20040019132A KR100730675B1 KR 100730675 B1 KR100730675 B1 KR 100730675B1 KR 1020040019132 A KR1020040019132 A KR 1020040019132A KR 20040019132 A KR20040019132 A KR 20040019132A KR 100730675 B1 KR100730675 B1 KR 100730675B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- chamber
- light source
- light
- storage device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
-
- A—HUMAN NECESSITIES
- A44—HABERDASHERY; JEWELLERY
- A44B—BUTTONS, PINS, BUCKLES, SLIDE FASTENERS, OR THE LIKE
- A44B15/00—Key-rings
- A44B15/005—Fobs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/392,793 | 2003-03-20 | ||
| US10/392,793 US6919573B2 (en) | 2003-03-20 | 2003-03-20 | Method and apparatus for recycling gases used in a lithography tool |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040083013A KR20040083013A (ko) | 2004-09-30 |
| KR100730675B1 true KR100730675B1 (ko) | 2007-06-21 |
Family
ID=32824890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040019132A Expired - Fee Related KR100730675B1 (ko) | 2003-03-20 | 2004-03-20 | 리소그래피 툴에서 사용되는 가스를 재생하기 위한 방법및 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6919573B2 (enExample) |
| EP (1) | EP1460479A3 (enExample) |
| JP (1) | JP3957695B2 (enExample) |
| KR (1) | KR100730675B1 (enExample) |
| CN (1) | CN1275099C (enExample) |
| SG (1) | SG115636A1 (enExample) |
| TW (1) | TW200421018A (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7856044B2 (en) | 1999-05-10 | 2010-12-21 | Cymer, Inc. | Extendable electrode for gas discharge laser |
| US7671349B2 (en) * | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
| US6770895B2 (en) * | 2002-11-21 | 2004-08-03 | Asml Holding N.V. | Method and apparatus for isolating light source gas from main chamber gas in a lithography tool |
| US6919573B2 (en) * | 2003-03-20 | 2005-07-19 | Asml Holding N.V | Method and apparatus for recycling gases used in a lithography tool |
| JP4763684B2 (ja) * | 2004-03-31 | 2011-08-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 放射線源により生じる粒子の除去 |
| US8094288B2 (en) | 2004-05-11 | 2012-01-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4710463B2 (ja) * | 2005-07-21 | 2011-06-29 | ウシオ電機株式会社 | 極端紫外光発生装置 |
| US7696492B2 (en) * | 2006-12-13 | 2010-04-13 | Asml Netherlands B.V. | Radiation system and lithographic apparatus |
| US7894037B2 (en) * | 2007-07-30 | 2011-02-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7812329B2 (en) | 2007-12-14 | 2010-10-12 | Cymer, Inc. | System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus |
| US7655925B2 (en) * | 2007-08-31 | 2010-02-02 | Cymer, Inc. | Gas management system for a laser-produced-plasma EUV light source |
| TWI402628B (zh) * | 2007-08-31 | 2013-07-21 | Cymer Inc | 控管極遠紫外線(euv)光微影裝置腔室間之氣體流動的系統 |
| US8115900B2 (en) * | 2007-09-17 | 2012-02-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| NL1036153A1 (nl) * | 2007-11-08 | 2009-05-11 | Asml Netherlands Bv | Method and system for determining a suppression factor of a suppression system and a lithographic apparatus. |
| NL1036181A1 (nl) * | 2007-11-30 | 2009-06-04 | Asml Netherlands Bv | A lithographic apparatus, a projection system and a device manufacturing method. |
| JP5339742B2 (ja) * | 2008-03-04 | 2013-11-13 | ウシオ電機株式会社 | 極端紫外光が出射する装置と極端紫外光が導入される装置との接続装置 |
| US8519366B2 (en) | 2008-08-06 | 2013-08-27 | Cymer, Inc. | Debris protection system having a magnetic field for an EUV light source |
| JP5559562B2 (ja) | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
| JP5578482B2 (ja) * | 2009-09-01 | 2014-08-27 | 株式会社Ihi | Lpp方式のeuv光源とその発生方法 |
| JP5578483B2 (ja) * | 2009-09-01 | 2014-08-27 | 株式会社Ihi | Lpp方式のeuv光源とその発生方法 |
| JP5687488B2 (ja) | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| US8587768B2 (en) * | 2010-04-05 | 2013-11-19 | Media Lario S.R.L. | EUV collector system with enhanced EUV radiation collection |
| US8686381B2 (en) | 2010-06-28 | 2014-04-01 | Media Lario S.R.L. | Source-collector module with GIC mirror and tin vapor LPP target system |
| EP2533078B1 (en) * | 2011-06-09 | 2014-02-12 | ASML Netherlands BV | Radiation source and lithographic apparatus |
| US9389180B2 (en) | 2013-02-15 | 2016-07-12 | Kla-Tencor Corporation | Methods and apparatus for use with extreme ultraviolet light having contamination protection |
| US9585236B2 (en) | 2013-05-03 | 2017-02-28 | Media Lario Srl | Sn vapor EUV LLP source system for EUV lithography |
| WO2024044165A1 (en) * | 2022-08-24 | 2024-02-29 | Lam Research Corporation | A plasma processing system with a gas recycling system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10273307A (ja) | 1996-08-27 | 1998-10-13 | Boc Group Inc:The | チャンバーから貴ガスを回収する方法 |
| KR100241953B1 (ko) | 1994-04-08 | 2000-03-02 | 미다라이 후지오 | 반도체디바이스제조용 처리장치 |
| US6064072A (en) | 1997-05-12 | 2000-05-16 | Cymer, Inc. | Plasma focus high energy photon source |
| US20020083409A1 (en) * | 2000-09-12 | 2002-06-27 | Hamm Uwe W. | Process and device for in-situ decontamination of a EUV lithography device |
| US6507641B1 (en) | 1999-10-08 | 2003-01-14 | Nikon Corporation | X-ray-generation devices, X-ray microlithography apparatus comprising same, and microelectronic-device fabrication methods utilizing same |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2195070B (en) * | 1986-09-11 | 1991-04-03 | Hoya Corp | Laser plasma x-ray generator capable of continuously generating x-rays |
| US5103102A (en) | 1989-02-24 | 1992-04-07 | Micrion Corporation | Localized vacuum apparatus and method |
| US6341006B1 (en) * | 1995-04-07 | 2002-01-22 | Nikon Corporation | Projection exposure apparatus |
| US6133577A (en) * | 1997-02-04 | 2000-10-17 | Advanced Energy Systems, Inc. | Method and apparatus for producing extreme ultra-violet light for use in photolithography |
| JPH10221499A (ja) | 1997-02-07 | 1998-08-21 | Hitachi Ltd | レーザプラズマx線源およびそれを用いた半導体露光装置並びに半導体露光方法 |
| US6031241A (en) | 1997-03-11 | 2000-02-29 | University Of Central Florida | Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications |
| US6586757B2 (en) * | 1997-05-12 | 2003-07-01 | Cymer, Inc. | Plasma focus light source with active and buffer gas control |
| US6566667B1 (en) * | 1997-05-12 | 2003-05-20 | Cymer, Inc. | Plasma focus light source with improved pulse power system |
| US6376329B1 (en) * | 1997-08-04 | 2002-04-23 | Nikon Corporation | Semiconductor wafer alignment using backside illumination |
| JPH11204411A (ja) | 1998-01-19 | 1999-07-30 | Nikon Corp | 塗布現像露光装置 |
| WO1999063790A1 (en) | 1998-05-29 | 1999-12-09 | Nikon Corporation | Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method |
| EP0981066A1 (de) | 1998-08-20 | 2000-02-23 | Gretag Imaging Ag | Lichtdichtesteuerung mittels LCD-Einrichtung |
| US6385290B1 (en) | 1998-09-14 | 2002-05-07 | Nikon Corporation | X-ray apparatus |
| EP1098226A3 (en) | 1999-11-05 | 2002-01-09 | Asm Lithography B.V. | Lithographic apparatus with gas flushing system |
| TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
| TW508980B (en) | 1999-12-23 | 2002-11-01 | Koninkl Philips Electronics Nv | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
| US6493423B1 (en) * | 1999-12-24 | 2002-12-10 | Koninklijke Philips Electronics N.V. | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
| JP2001345263A (ja) * | 2000-03-31 | 2001-12-14 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
| DE60130754T2 (de) | 2000-05-03 | 2008-01-24 | Asml Holding, N.V. | Apparat zur Erzeugung eines gespülten optischen Weges in einer photolithographischen Projektionsanlage sowie ein entsprechendes Verfahren |
| EP1186958B1 (en) | 2000-09-04 | 2007-03-14 | ASML Netherlands B.V. | Lithographic projection apparatus |
| US6576912B2 (en) * | 2001-01-03 | 2003-06-10 | Hugo M. Visser | Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window |
| JPWO2002056332A1 (ja) * | 2001-01-10 | 2004-05-20 | 株式会社荏原製作所 | 電子線による検査装置、検査方法、及びその検査装置を用いたデバイス製造方法 |
| US6614505B2 (en) | 2001-01-10 | 2003-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, device manufacturing method, and device manufactured thereby |
| JP2002289585A (ja) | 2001-03-26 | 2002-10-04 | Ebara Corp | 中性粒子ビーム処理装置 |
| DE10134033A1 (de) | 2001-04-06 | 2002-10-17 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung/weicher Röntgenstrahlung |
| DE10139677A1 (de) | 2001-04-06 | 2002-10-17 | Fraunhofer Ges Forschung | Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung |
| JP2004519868A (ja) | 2001-04-17 | 2004-07-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Euvに透明な境界構造 |
| US6895145B2 (en) * | 2001-08-02 | 2005-05-17 | Edward Ho | Apparatus and method for collecting light |
| WO2003034153A2 (en) | 2001-10-12 | 2003-04-24 | Koninklijke Philips Electronics N.V. | Lithographic apparatus and device manufacturing method |
| US6762424B2 (en) * | 2002-07-23 | 2004-07-13 | Intel Corporation | Plasma generation |
| DE10238096B3 (de) | 2002-08-21 | 2004-02-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungslampe |
| US6770895B2 (en) | 2002-11-21 | 2004-08-03 | Asml Holding N.V. | Method and apparatus for isolating light source gas from main chamber gas in a lithography tool |
| DE10256663B3 (de) | 2002-12-04 | 2005-10-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasentladungslampe für EUV-Strahlung |
| DE10310623B8 (de) | 2003-03-10 | 2005-12-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum |
| EP1606980B1 (en) | 2003-03-18 | 2010-08-04 | Philips Intellectual Property & Standards GmbH | Device for and method of generating extreme ultraviolet and/or soft x-ray radiation by means of a plasma |
| US6919573B2 (en) | 2003-03-20 | 2005-07-19 | Asml Holding N.V | Method and apparatus for recycling gases used in a lithography tool |
-
2003
- 2003-03-20 US US10/392,793 patent/US6919573B2/en not_active Expired - Lifetime
-
2004
- 2004-03-16 SG SG200401292A patent/SG115636A1/en unknown
- 2004-03-16 TW TW093106986A patent/TW200421018A/zh unknown
- 2004-03-17 JP JP2004076081A patent/JP3957695B2/ja not_active Expired - Fee Related
- 2004-03-18 EP EP04006587A patent/EP1460479A3/en not_active Withdrawn
- 2004-03-19 CN CNB2004100301471A patent/CN1275099C/zh not_active Expired - Fee Related
- 2004-03-20 KR KR1020040019132A patent/KR100730675B1/ko not_active Expired - Fee Related
-
2005
- 2005-06-29 US US11/169,016 patent/US7135693B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100241953B1 (ko) | 1994-04-08 | 2000-03-02 | 미다라이 후지오 | 반도체디바이스제조용 처리장치 |
| JPH10273307A (ja) | 1996-08-27 | 1998-10-13 | Boc Group Inc:The | チャンバーから貴ガスを回収する方法 |
| US6064072A (en) | 1997-05-12 | 2000-05-16 | Cymer, Inc. | Plasma focus high energy photon source |
| US6507641B1 (en) | 1999-10-08 | 2003-01-14 | Nikon Corporation | X-ray-generation devices, X-ray microlithography apparatus comprising same, and microelectronic-device fabrication methods utilizing same |
| US20020083409A1 (en) * | 2000-09-12 | 2002-06-27 | Hamm Uwe W. | Process and device for in-situ decontamination of a EUV lithography device |
Also Published As
| Publication number | Publication date |
|---|---|
| SG115636A1 (en) | 2005-10-28 |
| JP3957695B2 (ja) | 2007-08-15 |
| KR20040083013A (ko) | 2004-09-30 |
| TW200421018A (en) | 2004-10-16 |
| CN1532634A (zh) | 2004-09-29 |
| CN1275099C (zh) | 2006-09-13 |
| US20040183030A1 (en) | 2004-09-23 |
| EP1460479A2 (en) | 2004-09-22 |
| JP2004289151A (ja) | 2004-10-14 |
| EP1460479A3 (en) | 2006-02-01 |
| US20050263720A1 (en) | 2005-12-01 |
| US6919573B2 (en) | 2005-07-19 |
| US7135693B2 (en) | 2006-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100730675B1 (ko) | 리소그래피 툴에서 사용되는 가스를 재생하기 위한 방법및 장치 | |
| KR100822071B1 (ko) | 리소그래피 도구 내의 메인 챔버 가스로부터 광원 가스를고립시키는 방법 및 장치 | |
| US9000404B2 (en) | Systems and methods for optics cleaning in an EUV light source | |
| KR100750412B1 (ko) | Euv 방사선 생성 방법, euv 방사선에 의한 장치 제조 방법, euv 방사선 소스 유닛, 리소그래피 투영 장치 | |
| KR100747779B1 (ko) | 리소그래피 장치, 조명시스템 및 더브리 트래핑 시스템 | |
| US7670754B2 (en) | Exposure apparatus having a processing chamber, a vacuum chamber and first and second load lock chambers | |
| WO2009015838A1 (en) | Lithographic apparatus and device manufacturing method | |
| JP2005032510A (ja) | Euv光源、露光装置及び露光方法 | |
| TW200903181A (en) | Exposure apparatus | |
| US11874608B2 (en) | Apparatus for and method of reducing contamination from source material in an EUV light source | |
| JP2011258950A (ja) | 水素ラジカルジェネレータ | |
| CN112823314B (zh) | 无光致抗蚀剂光刻、光加工工具及使用vuv或深uv灯的方法 | |
| JP2008522399A (ja) | 荷電粒子に露出される表面の保護 | |
| WO2016177519A1 (en) | Radiation source, lithographic apparatus and device manufacturing method | |
| KR102868707B1 (ko) | 패터닝 디바이스와 기타 기판의 표면 처리를 위한 표면 처리 장치 및 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| A201 | Request for examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| D13-X000 | Search requested |
St.27 status event code: A-1-2-D10-D13-srh-X000 |
|
| D14-X000 | Search report completed |
St.27 status event code: A-1-2-D10-D14-srh-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| G170 | Re-publication after modification of scope of protection [patent] | ||
| PG1701 | Publication of correction |
St.27 status event code: A-5-5-P10-P19-oth-PG1701 Patent document republication publication date: 20080423 Republication note text: Request for Correction Notice (Document Request) Gazette number: 1007306750000 Gazette reference publication date: 20070621 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-5-5-R10-R17-oth-X000 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20100615 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20100615 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |