CN1242411C - 磁性随机访问存储器 - Google Patents

磁性随机访问存储器 Download PDF

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Publication number
CN1242411C
CN1242411C CNB021524564A CN02152456A CN1242411C CN 1242411 C CN1242411 C CN 1242411C CN B021524564 A CNB021524564 A CN B021524564A CN 02152456 A CN02152456 A CN 02152456A CN 1242411 C CN1242411 C CN 1242411C
Authority
CN
China
Prior art keywords
lead
array
mtj elements
transistor
magnetic random
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021524564A
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English (en)
Chinese (zh)
Other versions
CN1421865A (zh
Inventor
梶山健
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1421865A publication Critical patent/CN1421865A/zh
Application granted granted Critical
Publication of CN1242411C publication Critical patent/CN1242411C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB021524564A 2001-11-30 2002-11-28 磁性随机访问存储器 Expired - Fee Related CN1242411C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP367753/2001 2001-11-30
JP2001367753A JP3906067B2 (ja) 2001-11-30 2001-11-30 磁気ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
CN1421865A CN1421865A (zh) 2003-06-04
CN1242411C true CN1242411C (zh) 2006-02-15

Family

ID=19177456

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021524564A Expired - Fee Related CN1242411C (zh) 2001-11-30 2002-11-28 磁性随机访问存储器

Country Status (5)

Country Link
US (2) US6760250B2 (enExample)
JP (1) JP3906067B2 (enExample)
KR (1) KR100509528B1 (enExample)
CN (1) CN1242411C (enExample)
TW (1) TWI241585B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294191A (ja) * 2005-04-14 2006-10-26 Toshiba Corp 磁気ランダムアクセスメモリのデータ読み出し方法
US8372661B2 (en) 2007-10-31 2013-02-12 Magic Technologies, Inc. High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
US10622047B2 (en) * 2018-03-23 2020-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894447A (en) * 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure
DE19853447A1 (de) 1998-11-19 2000-05-25 Siemens Ag Magnetischer Speicher
DE10020128A1 (de) * 2000-04-14 2001-10-18 Infineon Technologies Ag MRAM-Speicher
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
TW582032B (en) * 2001-11-30 2004-04-01 Toshiba Corp Magnetic random access memory
JP3875568B2 (ja) * 2002-02-05 2007-01-31 株式会社東芝 半導体装置及びその製造方法
JP4646485B2 (ja) * 2002-06-25 2011-03-09 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置

Also Published As

Publication number Publication date
US6822896B2 (en) 2004-11-23
KR100509528B1 (ko) 2005-08-23
US20040208054A1 (en) 2004-10-21
US6760250B2 (en) 2004-07-06
TWI241585B (en) 2005-10-11
US20030103378A1 (en) 2003-06-05
CN1421865A (zh) 2003-06-04
KR20030044863A (ko) 2003-06-09
JP2003168784A (ja) 2003-06-13
JP3906067B2 (ja) 2007-04-18
TW200303018A (en) 2003-08-16

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060215

Termination date: 20121128