KR100509528B1 - 자기 랜덤 액세스 메모리 - Google Patents

자기 랜덤 액세스 메모리 Download PDF

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Publication number
KR100509528B1
KR100509528B1 KR10-2002-0075227A KR20020075227A KR100509528B1 KR 100509528 B1 KR100509528 B1 KR 100509528B1 KR 20020075227 A KR20020075227 A KR 20020075227A KR 100509528 B1 KR100509528 B1 KR 100509528B1
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KR
South Korea
Prior art keywords
array
mtj elements
line
conductive
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0075227A
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English (en)
Korean (ko)
Other versions
KR20030044863A (ko
Inventor
가지야마다께시
Original Assignee
가부시끼가이샤 도시바
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Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20030044863A publication Critical patent/KR20030044863A/ko
Application granted granted Critical
Publication of KR100509528B1 publication Critical patent/KR100509528B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
KR10-2002-0075227A 2001-11-30 2002-11-29 자기 랜덤 액세스 메모리 Expired - Fee Related KR100509528B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00367753 2001-11-30
JP2001367753A JP3906067B2 (ja) 2001-11-30 2001-11-30 磁気ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
KR20030044863A KR20030044863A (ko) 2003-06-09
KR100509528B1 true KR100509528B1 (ko) 2005-08-23

Family

ID=19177456

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0075227A Expired - Fee Related KR100509528B1 (ko) 2001-11-30 2002-11-29 자기 랜덤 액세스 메모리

Country Status (5)

Country Link
US (2) US6760250B2 (enExample)
JP (1) JP3906067B2 (enExample)
KR (1) KR100509528B1 (enExample)
CN (1) CN1242411C (enExample)
TW (1) TWI241585B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006294191A (ja) * 2005-04-14 2006-10-26 Toshiba Corp 磁気ランダムアクセスメモリのデータ読み出し方法
US8372661B2 (en) 2007-10-31 2013-02-12 Magic Technologies, Inc. High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
US10622047B2 (en) * 2018-03-23 2020-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010100903A (ko) * 2000-04-14 2001-11-14 추후제출 엠램 메모리

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5894447A (en) * 1996-09-26 1999-04-13 Kabushiki Kaisha Toshiba Semiconductor memory device including a particular memory cell block structure
DE19853447A1 (de) 1998-11-19 2000-05-25 Siemens Ag Magnetischer Speicher
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
TW582032B (en) * 2001-11-30 2004-04-01 Toshiba Corp Magnetic random access memory
JP3875568B2 (ja) * 2002-02-05 2007-01-31 株式会社東芝 半導体装置及びその製造方法
JP4646485B2 (ja) * 2002-06-25 2011-03-09 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010100903A (ko) * 2000-04-14 2001-11-14 추후제출 엠램 메모리

Also Published As

Publication number Publication date
US6822896B2 (en) 2004-11-23
US20040208054A1 (en) 2004-10-21
US6760250B2 (en) 2004-07-06
TWI241585B (en) 2005-10-11
US20030103378A1 (en) 2003-06-05
CN1421865A (zh) 2003-06-04
KR20030044863A (ko) 2003-06-09
CN1242411C (zh) 2006-02-15
JP2003168784A (ja) 2003-06-13
JP3906067B2 (ja) 2007-04-18
TW200303018A (en) 2003-08-16

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