TWI241585B - Magnetic random access memory - Google Patents
Magnetic random access memory Download PDFInfo
- Publication number
- TWI241585B TWI241585B TW091133714A TW91133714A TWI241585B TW I241585 B TWI241585 B TW I241585B TW 091133714 A TW091133714 A TW 091133714A TW 91133714 A TW91133714 A TW 91133714A TW I241585 B TWI241585 B TW I241585B
- Authority
- TW
- Taiwan
- Prior art keywords
- random access
- access memory
- array
- magnetic random
- elements
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 50
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000006870 function Effects 0.000 description 15
- 230000015654 memory Effects 0.000 description 12
- 238000009825 accumulation Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001367753A JP3906067B2 (ja) | 2001-11-30 | 2001-11-30 | 磁気ランダムアクセスメモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200303018A TW200303018A (en) | 2003-08-16 |
| TWI241585B true TWI241585B (en) | 2005-10-11 |
Family
ID=19177456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091133714A TWI241585B (en) | 2001-11-30 | 2002-11-19 | Magnetic random access memory |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6760250B2 (enExample) |
| JP (1) | JP3906067B2 (enExample) |
| KR (1) | KR100509528B1 (enExample) |
| CN (1) | CN1242411C (enExample) |
| TW (1) | TWI241585B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006294191A (ja) * | 2005-04-14 | 2006-10-26 | Toshiba Corp | 磁気ランダムアクセスメモリのデータ読み出し方法 |
| US8372661B2 (en) | 2007-10-31 | 2013-02-12 | Magic Technologies, Inc. | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same |
| US10622047B2 (en) * | 2018-03-23 | 2020-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer |
| US10522752B1 (en) | 2018-08-22 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5894447A (en) * | 1996-09-26 | 1999-04-13 | Kabushiki Kaisha Toshiba | Semiconductor memory device including a particular memory cell block structure |
| DE19853447A1 (de) | 1998-11-19 | 2000-05-25 | Siemens Ag | Magnetischer Speicher |
| DE10020128A1 (de) * | 2000-04-14 | 2001-10-18 | Infineon Technologies Ag | MRAM-Speicher |
| JP4149647B2 (ja) * | 2000-09-28 | 2008-09-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| CN100358047C (zh) * | 2001-11-30 | 2007-12-26 | 株式会社东芝 | 磁随机存取存储器 |
| JP3875568B2 (ja) * | 2002-02-05 | 2007-01-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP4646485B2 (ja) * | 2002-06-25 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
-
2001
- 2001-11-30 JP JP2001367753A patent/JP3906067B2/ja not_active Expired - Fee Related
-
2002
- 2002-11-19 TW TW091133714A patent/TWI241585B/zh not_active IP Right Cessation
- 2002-11-28 CN CNB021524564A patent/CN1242411C/zh not_active Expired - Fee Related
- 2002-11-29 US US10/306,404 patent/US6760250B2/en not_active Expired - Lifetime
- 2002-11-29 KR KR10-2002-0075227A patent/KR100509528B1/ko not_active Expired - Fee Related
-
2004
- 2004-05-18 US US10/847,624 patent/US6822896B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003168784A (ja) | 2003-06-13 |
| KR20030044863A (ko) | 2003-06-09 |
| KR100509528B1 (ko) | 2005-08-23 |
| CN1242411C (zh) | 2006-02-15 |
| US20040208054A1 (en) | 2004-10-21 |
| US6760250B2 (en) | 2004-07-06 |
| TW200303018A (en) | 2003-08-16 |
| US6822896B2 (en) | 2004-11-23 |
| CN1421865A (zh) | 2003-06-04 |
| JP3906067B2 (ja) | 2007-04-18 |
| US20030103378A1 (en) | 2003-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |