CN1241000A - 熔丝电路及冗余译码器 - Google Patents
熔丝电路及冗余译码器 Download PDFInfo
- Publication number
- CN1241000A CN1241000A CN99109459A CN99109459A CN1241000A CN 1241000 A CN1241000 A CN 1241000A CN 99109459 A CN99109459 A CN 99109459A CN 99109459 A CN99109459 A CN 99109459A CN 1241000 A CN1241000 A CN 1241000A
- Authority
- CN
- China
- Prior art keywords
- circuit
- fuse
- address
- signal
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 17
- 238000012423 maintenance Methods 0.000 claims description 11
- 238000004321 preservation Methods 0.000 claims 2
- 238000003860 storage Methods 0.000 description 18
- 238000012360 testing method Methods 0.000 description 17
- 238000005520 cutting process Methods 0.000 description 16
- 230000001360 synchronised effect Effects 0.000 description 14
- 230000015654 memory Effects 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 238000006467 substitution reaction Methods 0.000 description 9
- 230000002950 deficient Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 102100035606 Beta-casein Human genes 0.000 description 1
- 101000947120 Homo sapiens Beta-casein Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19050798A JP3401522B2 (ja) | 1998-07-06 | 1998-07-06 | ヒューズ回路及び冗長デコーダ回路 |
JP190507/98 | 1998-07-06 | ||
JP190507/1998 | 1998-07-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1241000A true CN1241000A (zh) | 2000-01-12 |
CN1126103C CN1126103C (zh) | 2003-10-29 |
Family
ID=16259250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99109459A Expired - Fee Related CN1126103C (zh) | 1998-07-06 | 1999-07-06 | 熔丝电路及冗余译码器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6281739B1 (zh) |
JP (1) | JP3401522B2 (zh) |
KR (1) | KR100321654B1 (zh) |
CN (1) | CN1126103C (zh) |
TW (1) | TW434548B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7565518B2 (en) | 2003-02-13 | 2009-07-21 | Fujitsu Microelectronics Limited | Semiconductor device and method of controlling the semiconductor device |
CN101944524A (zh) * | 2009-07-01 | 2011-01-12 | 海力士半导体有限公司 | 半导体装置 |
CN101364590B (zh) * | 2007-08-06 | 2012-12-19 | 瑞萨电子株式会社 | 熔丝电路 |
CN101119108B (zh) * | 2007-09-18 | 2014-03-19 | 钰创科技股份有限公司 | 一种熔丝电路 |
CN104200837A (zh) * | 2013-08-21 | 2014-12-10 | 威盛电子股份有限公司 | 配置数据的处理装置及方法 |
CN104183271B (zh) * | 2013-08-21 | 2017-05-10 | 威盛电子股份有限公司 | 配置数据的处理装置及方法 |
CN109285578A (zh) * | 2017-07-20 | 2019-01-29 | 三星电子株式会社 | 包括动态电压和频率缩放开关的存储器件及其操作方法 |
US10825546B2 (en) | 2018-07-19 | 2020-11-03 | Winbond Electronics Corp. | Memory device and memory peripheral circuit |
CN116580728A (zh) * | 2023-07-14 | 2023-08-11 | 上海海栎创科技股份有限公司 | 一种rom输出控制电路及方法 |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6339191B1 (en) * | 1994-03-11 | 2002-01-15 | Silicon Bandwidth Inc. | Prefabricated semiconductor chip carrier |
KR100546300B1 (ko) * | 1999-10-01 | 2006-01-26 | 삼성전자주식회사 | 칩 정보 출력회로 |
KR100317490B1 (ko) * | 1999-12-29 | 2001-12-24 | 박종섭 | 안티퓨즈 회로 |
EP1118868B1 (de) * | 2000-01-18 | 2005-04-20 | Infineon Technologies AG | Chipkartenschaltung mit überwachtem Zugang zum Testmodus |
JP4530527B2 (ja) * | 2000-12-08 | 2010-08-25 | ルネサスエレクトロニクス株式会社 | スタティック型半導体記憶装置 |
JP2002203901A (ja) * | 2000-12-27 | 2002-07-19 | Toshiba Microelectronics Corp | フューズ回路 |
WO2002069347A2 (en) * | 2001-02-27 | 2002-09-06 | Micron Technology, Inc. | Flash cell fuse circuit |
ITRM20010105A1 (it) | 2001-02-27 | 2002-08-27 | Micron Technology Inc | Circuito a fusibile per una cella di memoria flash. |
US6426668B1 (en) * | 2001-03-22 | 2002-07-30 | International Business Machines Corporation | Imbalanced sense amplifier fuse detection circuit |
KR100771533B1 (ko) * | 2001-06-30 | 2007-10-31 | 주식회사 하이닉스반도체 | 퓨즈 컷팅 회로 |
US6781437B2 (en) | 2001-07-11 | 2004-08-24 | Infineon Technologies Aktiengesellschaft | Zero static power programmable fuse cell for integrated circuits |
US6603344B2 (en) * | 2001-07-11 | 2003-08-05 | Infineon Technologies Ag | Zero static power programmable fuse cell for integrated circuits |
US6839298B2 (en) | 2001-07-11 | 2005-01-04 | Infineon Technologies Aktiengesellschaft | Zero static power fuse cell for integrated circuits |
US6617874B2 (en) * | 2002-01-02 | 2003-09-09 | Intel Corporation | Power-up logic reference circuit and related method |
US6882202B2 (en) * | 2003-01-21 | 2005-04-19 | Infineon Technologies Ag | Multiple trip point fuse latch device and method |
JP4115976B2 (ja) * | 2003-09-16 | 2008-07-09 | 株式会社東芝 | 半導体記憶装置 |
US7321518B1 (en) | 2004-01-15 | 2008-01-22 | Altera Corporation | Apparatus and methods for providing redundancy in integrated circuits |
US20060062198A1 (en) * | 2004-09-17 | 2006-03-23 | Shoei-Lai Chen | Network wireless telephone system for MSN platform and method for applying the same |
US7035152B1 (en) * | 2004-10-14 | 2006-04-25 | Micron Technology, Inc. | System and method for redundancy memory decoding |
KR100615596B1 (ko) * | 2004-12-22 | 2006-08-25 | 삼성전자주식회사 | 반도체 장치 |
US20060202824A1 (en) * | 2005-02-04 | 2006-09-14 | Container Security Inc. | Electronic seal and method of shipping container tracking |
KR100752645B1 (ko) | 2005-06-25 | 2007-08-29 | 삼성전자주식회사 | 누설 전류 패스를 차단할 수 있는 퓨즈 회로 |
US20080137251A1 (en) * | 2006-12-12 | 2008-06-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Repair circuitry with an enhanced ESD protection device |
US20080211513A1 (en) * | 2007-02-15 | 2008-09-04 | Stmicroelectronics, Inc. | Initiation of fuse sensing circuitry and storage of sensed fuse status information |
KR20080095009A (ko) * | 2007-04-23 | 2008-10-28 | 주식회사 하이닉스반도체 | 컬럼 리던던시 회로 |
JP5437658B2 (ja) * | 2009-02-18 | 2014-03-12 | セイコーインスツル株式会社 | データ読出回路及び半導体記憶装置 |
US8253475B2 (en) * | 2010-10-08 | 2012-08-28 | Winbond Electronics Corp. | Fuse detecting apparatus |
US9053889B2 (en) * | 2013-03-05 | 2015-06-09 | International Business Machines Corporation | Electronic fuse cell and array |
JP6360610B1 (ja) | 2017-11-22 | 2018-07-18 | 力晶科技股▲ふん▼有限公司 | Sram装置のための冗長回路、sram装置、及び半導体装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60129998A (ja) * | 1984-09-14 | 1985-07-11 | Sharp Corp | 冗長構成mosメモリのデコ−ダ回路 |
JP2595271B2 (ja) | 1987-12-21 | 1997-04-02 | 株式会社日立製作所 | プログラム回路 |
JP2663586B2 (ja) * | 1988-11-28 | 1997-10-15 | 日本電気株式会社 | メモリ回路 |
JP3123058B2 (ja) * | 1990-04-23 | 2001-01-09 | 日本電気株式会社 | 半導体メモリ |
JPH04147494A (ja) | 1990-10-11 | 1992-05-20 | Nec Ic Microcomput Syst Ltd | プログラム回路 |
JP2637314B2 (ja) * | 1991-08-30 | 1997-08-06 | 株式会社東芝 | 不揮発性メモリ回路 |
JP2994114B2 (ja) * | 1991-10-08 | 1999-12-27 | 日本電気アイシーマイコンシステム株式会社 | プログラム回路 |
JPH05250892A (ja) | 1992-03-05 | 1993-09-28 | Fujitsu Ltd | 冗長アドレス発生回路 |
US5345110A (en) * | 1993-04-13 | 1994-09-06 | Micron Semiconductor, Inc. | Low-power fuse detect and latch circuit |
US5402390A (en) * | 1993-10-04 | 1995-03-28 | Texas Instruments Inc. | Fuse selectable timing signals for internal signal generators |
JP2630274B2 (ja) | 1994-09-28 | 1997-07-16 | 日本電気株式会社 | 半導体記憶装置 |
US5566107A (en) * | 1995-05-05 | 1996-10-15 | Micron Technology, Inc. | Programmable circuit for enabling an associated circuit |
US5600277A (en) * | 1995-05-09 | 1997-02-04 | Texas Instruments Incorporated | Apparatus and method for a NMOS redundancy fuse passgate circuit using a VPP supply |
KR0147194B1 (ko) | 1995-05-26 | 1998-11-02 | 문정환 | 반도체 메모리 소자 |
US5680360A (en) * | 1995-06-06 | 1997-10-21 | Integrated Device Technology, Inc. | Circuits for improving the reliablity of antifuses in integrated circuits |
KR0149259B1 (ko) * | 1995-06-30 | 1998-10-15 | 김광호 | 반도체 메모리 장치의 퓨즈 시그너쳐 회로 |
KR100204340B1 (ko) * | 1996-06-19 | 1999-06-15 | 윤종용 | 메모리 장치의 모드 셋팅 회로 |
US6037831A (en) * | 1998-03-30 | 2000-03-14 | Xerox Corporation | Fusible link circuit including a preview feature |
-
1998
- 1998-07-06 JP JP19050798A patent/JP3401522B2/ja not_active Expired - Fee Related
-
1999
- 1999-07-05 KR KR1019990026859A patent/KR100321654B1/ko not_active IP Right Cessation
- 1999-07-05 TW TW088111483A patent/TW434548B/zh not_active IP Right Cessation
- 1999-07-06 US US09/347,418 patent/US6281739B1/en not_active Expired - Lifetime
- 1999-07-06 CN CN99109459A patent/CN1126103C/zh not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7565518B2 (en) | 2003-02-13 | 2009-07-21 | Fujitsu Microelectronics Limited | Semiconductor device and method of controlling the semiconductor device |
CN1692452B (zh) * | 2003-02-13 | 2010-12-22 | 富士通半导体股份有限公司 | 半导体器件及半导体器件的控制方法 |
CN101364590B (zh) * | 2007-08-06 | 2012-12-19 | 瑞萨电子株式会社 | 熔丝电路 |
CN101119108B (zh) * | 2007-09-18 | 2014-03-19 | 钰创科技股份有限公司 | 一种熔丝电路 |
CN101944524A (zh) * | 2009-07-01 | 2011-01-12 | 海力士半导体有限公司 | 半导体装置 |
CN101944524B (zh) * | 2009-07-01 | 2013-01-16 | 海力士半导体有限公司 | 半导体装置 |
CN104200837A (zh) * | 2013-08-21 | 2014-12-10 | 威盛电子股份有限公司 | 配置数据的处理装置及方法 |
CN104183271B (zh) * | 2013-08-21 | 2017-05-10 | 威盛电子股份有限公司 | 配置数据的处理装置及方法 |
CN104200837B (zh) * | 2013-08-21 | 2017-11-14 | 上海兆芯集成电路有限公司 | 配置数据的处理装置及方法 |
CN109285578A (zh) * | 2017-07-20 | 2019-01-29 | 三星电子株式会社 | 包括动态电压和频率缩放开关的存储器件及其操作方法 |
CN109285578B (zh) * | 2017-07-20 | 2023-08-01 | 三星电子株式会社 | 包括动态电压和频率缩放开关的存储器件及其操作方法 |
US10825546B2 (en) | 2018-07-19 | 2020-11-03 | Winbond Electronics Corp. | Memory device and memory peripheral circuit |
CN116580728A (zh) * | 2023-07-14 | 2023-08-11 | 上海海栎创科技股份有限公司 | 一种rom输出控制电路及方法 |
Also Published As
Publication number | Publication date |
---|---|
US6281739B1 (en) | 2001-08-28 |
JP2000021191A (ja) | 2000-01-21 |
CN1126103C (zh) | 2003-10-29 |
KR20000011485A (ko) | 2000-02-25 |
TW434548B (en) | 2001-05-16 |
KR100321654B1 (ko) | 2002-01-24 |
JP3401522B2 (ja) | 2003-04-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Effective date: 20030530 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030530 Address after: Tokyo, Japan Applicant after: NEC Corp. Co-applicant after: NEC Corp. Address before: Tokyo, Japan Applicant before: NEC Corp. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD.; NEC ELECTRONICS TAIWAN LTD. Effective date: 20070202 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070202 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Co-patentee before: NEC Corp. Patentee before: NEC Corp. |
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C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER NAME: NEC CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20031029 Termination date: 20150706 |
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EXPY | Termination of patent right or utility model |