ITRM20010105A1 - Circuito a fusibile per una cella di memoria flash. - Google Patents

Circuito a fusibile per una cella di memoria flash.

Info

Publication number
ITRM20010105A1
ITRM20010105A1 IT2001RM000105A ITRM20010105A ITRM20010105A1 IT RM20010105 A1 ITRM20010105 A1 IT RM20010105A1 IT 2001RM000105 A IT2001RM000105 A IT 2001RM000105A IT RM20010105 A ITRM20010105 A IT RM20010105A IT RM20010105 A1 ITRM20010105 A1 IT RM20010105A1
Authority
IT
Italy
Prior art keywords
memory cell
flash memory
fuse circuit
fuse
circuit
Prior art date
Application number
IT2001RM000105A
Other languages
English (en)
Inventor
Giovanni Santin
Giovanni Naso
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT2001RM000105A priority Critical patent/ITRM20010105A1/it
Publication of ITRM20010105A0 publication Critical patent/ITRM20010105A0/it
Priority to US09/943,643 priority patent/US6654272B2/en
Priority to PCT/US2002/005735 priority patent/WO2002069347A2/en
Priority to AU2002244159A priority patent/AU2002244159A1/en
Publication of ITRM20010105A1 publication Critical patent/ITRM20010105A1/it
Priority to US10/642,959 priority patent/US6845029B2/en
Priority to US10/642,961 priority patent/US7002828B2/en
Priority to US11/293,760 priority patent/US7277311B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
IT2001RM000105A 2001-02-27 2001-02-27 Circuito a fusibile per una cella di memoria flash. ITRM20010105A1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT2001RM000105A ITRM20010105A1 (it) 2001-02-27 2001-02-27 Circuito a fusibile per una cella di memoria flash.
US09/943,643 US6654272B2 (en) 2001-02-27 2001-08-30 Flash cell fuse circuit
PCT/US2002/005735 WO2002069347A2 (en) 2001-02-27 2002-02-27 Flash cell fuse circuit
AU2002244159A AU2002244159A1 (en) 2001-02-27 2002-02-27 Flash cell fuse circuit
US10/642,959 US6845029B2 (en) 2001-02-27 2003-08-18 Flash cell fuse circuit
US10/642,961 US7002828B2 (en) 2001-02-27 2003-08-18 Flash cell fuse circuit
US11/293,760 US7277311B2 (en) 2001-02-27 2005-12-02 Flash cell fuse circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2001RM000105A ITRM20010105A1 (it) 2001-02-27 2001-02-27 Circuito a fusibile per una cella di memoria flash.

Publications (2)

Publication Number Publication Date
ITRM20010105A0 ITRM20010105A0 (it) 2001-02-27
ITRM20010105A1 true ITRM20010105A1 (it) 2002-08-27

Family

ID=11455277

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2001RM000105A ITRM20010105A1 (it) 2001-02-27 2001-02-27 Circuito a fusibile per una cella di memoria flash.

Country Status (3)

Country Link
US (1) US6654272B2 (it)
AU (1) AU2002244159A1 (it)
IT (1) ITRM20010105A1 (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITRM20010556A1 (it) * 2001-09-12 2003-03-12 Micron Technology Inc Decodificatore per decodificare i comandi di commutazione a modo di test di circuiti integrati.
JP3866588B2 (ja) * 2002-03-01 2007-01-10 エルピーダメモリ株式会社 半導体集積回路装置
ITRM20030039A1 (it) * 2003-01-30 2004-07-31 Micron Technology Inc Sblocco di registro di protezione per chip.
ITRM20030329A1 (it) * 2003-07-07 2005-01-08 Micron Technology Inc Cella "famos" senza precarica e circuito latch in un
US7145370B2 (en) * 2003-09-05 2006-12-05 Impinj, Inc. High-voltage switches in single-well CMOS processes
KR100574961B1 (ko) * 2003-12-20 2006-05-02 삼성전자주식회사 입력버퍼 및 이를 구비하는 반도체 장치
US7242614B2 (en) * 2004-03-30 2007-07-10 Impinj, Inc. Rewriteable electronic fuses
US7388420B2 (en) * 2004-03-30 2008-06-17 Impinj, Inc. Rewriteable electronic fuses
US7177182B2 (en) * 2004-03-30 2007-02-13 Impinj, Inc. Rewriteable electronic fuses
US7283390B2 (en) 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
KR100618696B1 (ko) * 2004-04-28 2006-09-08 주식회사 하이닉스반도체 인식 정보를 갖는 메모리 장치
US8111558B2 (en) 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US7257033B2 (en) 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US7679957B2 (en) 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
US7289363B2 (en) * 2005-05-19 2007-10-30 Micron Technology, Inc. Memory cell repair using fuse programming method in a flash memory device
US7310282B2 (en) * 2005-12-30 2007-12-18 Lexmark International, Inc. Distributed programmed memory cell overwrite protection
KR101197555B1 (ko) 2006-02-03 2012-11-09 삼성전자주식회사 마진 읽기를 제공하는 전기적인 퓨즈 회로
US7400532B2 (en) * 2006-02-16 2008-07-15 Micron Technology, Inc. Programming method to reduce gate coupling interference for non-volatile memory
US7342844B2 (en) * 2006-08-03 2008-03-11 Macronix International Co., Ltd. Power on sequence for a flash memory device
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7379341B2 (en) * 2006-10-05 2008-05-27 Macronix International Co., Ltd. Loading data with error detection in a power on sequence of flash memory device
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
US7495987B2 (en) * 2007-06-11 2009-02-24 Freescale Semiconductor, Inc. Current-mode memory cell
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
US9479169B1 (en) * 2015-12-28 2016-10-25 Elite Semiconductor Memory Technology Inc. Control circuit applied in e-fuse system and related method
TWI596617B (zh) * 2016-03-11 2017-08-21 晶豪科技股份有限公司 應用於電子熔絲系統的控制電路與相關方法
KR20210085652A (ko) * 2019-12-31 2021-07-08 에스케이하이닉스 주식회사 반도체 장치의 퓨즈 래치
KR20230030175A (ko) 2021-08-25 2023-03-06 에스케이하이닉스 주식회사 반도체 장치의 퓨즈 래치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105159B2 (ja) 1989-11-16 1995-11-13 株式会社東芝 半導体記憶装置の冗長回路
FR2684206B1 (fr) 1991-11-25 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de lecture de fusible de redondance pour memoire integree.
US5627784A (en) 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method
DE19631130C2 (de) 1996-08-01 2000-08-17 Siemens Ag Fuse-Refresh-Schaltung
KR100233283B1 (ko) 1996-12-24 1999-12-01 김영환 플래쉬 메모리 셀을 이용한 리페어 퓨즈 초기화 회로
KR100250755B1 (ko) 1996-12-28 2000-05-01 김영환 플래쉬 메모리 장치
US5933370A (en) 1998-01-09 1999-08-03 Information Storage Devices, Inc. Trimbit circuit for flash memory
JP3401522B2 (ja) 1998-07-06 2003-04-28 日本電気株式会社 ヒューズ回路及び冗長デコーダ回路
JP3625383B2 (ja) * 1998-08-25 2005-03-02 シャープ株式会社 不揮発性半導体メモリ装置
JP4437565B2 (ja) 1998-11-26 2010-03-24 富士通マイクロエレクトロニクス株式会社 半導体集積回路装置、半導体集積回路装置の設計方法、及び、記録媒体
JP3701160B2 (ja) * 1999-12-24 2005-09-28 シャープ株式会社 冗長機能を有する不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
ITRM20010105A0 (it) 2001-02-27
AU2002244159A1 (en) 2002-09-12
US20020122331A1 (en) 2002-09-05
US6654272B2 (en) 2003-11-25

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