CN1215879A - 具有作为后方磁通引导读出层的磁性隧道结磁阻读出磁头 - Google Patents
具有作为后方磁通引导读出层的磁性隧道结磁阻读出磁头 Download PDFInfo
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- CN1215879A CN1215879A CN98123427A CN98123427A CN1215879A CN 1215879 A CN1215879 A CN 1215879A CN 98123427 A CN98123427 A CN 98123427A CN 98123427 A CN98123427 A CN 98123427A CN 1215879 A CN1215879 A CN 1215879A
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- magnetic head
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 206
- 230000004907 flux Effects 0.000 title abstract description 44
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 189
- 230000004888 barrier function Effects 0.000 claims abstract description 61
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 41
- 230000005415 magnetization Effects 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 22
- 238000009413 insulation Methods 0.000 claims description 17
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 230000005389 magnetism Effects 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 30
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 239000003112 inhibitor Substances 0.000 description 11
- 229910003271 Ni-Fe Inorganic materials 0.000 description 10
- 239000000696 magnetic material Substances 0.000 description 8
- 229910002551 Fe-Mn Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000003302 ferromagnetic material Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910020706 Co—Re Inorganic materials 0.000 description 1
- 229910020710 Co—Sm Inorganic materials 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 241001061076 Melanonus zugmayeri Species 0.000 description 1
- 229910003286 Ni-Mn Inorganic materials 0.000 description 1
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 235000013409 condiments Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/332—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3912—Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US957788 | 1997-10-24 | ||
US08/957,788 US5901018A (en) | 1997-10-24 | 1997-10-24 | Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1215879A true CN1215879A (zh) | 1999-05-05 |
CN1139916C CN1139916C (zh) | 2004-02-25 |
Family
ID=25500136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981234275A Expired - Fee Related CN1139916C (zh) | 1997-10-24 | 1998-10-23 | 具有作为后方磁通引导读出层的磁性隧道结磁电阻读出磁头 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5901018A (zh) |
EP (1) | EP0911810B1 (zh) |
JP (1) | JP3004007B2 (zh) |
KR (1) | KR100295289B1 (zh) |
CN (1) | CN1139916C (zh) |
DE (1) | DE69835650T2 (zh) |
MY (1) | MY117419A (zh) |
SG (1) | SG87011A1 (zh) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
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US5869963A (en) | 1996-09-12 | 1999-02-09 | Alps Electric Co., Ltd. | Magnetoresistive sensor and head |
JPH11175920A (ja) | 1997-12-05 | 1999-07-02 | Nec Corp | 磁気抵抗効果型複合ヘッドおよびその製造方法 |
US6795280B1 (en) | 1998-11-18 | 2004-09-21 | Seagate Technology Llc | Tunneling magneto-resistive read head with two-piece free layer |
US6411478B1 (en) | 1999-02-11 | 2002-06-25 | Seagate Technology Llc | Spin tunnel junction recording heads using an edge junction structure with CIP |
US6462919B1 (en) * | 1999-04-28 | 2002-10-08 | Seagate Technology Llc | Spin valve sensor with exchange tabs |
US6433970B1 (en) | 1999-06-07 | 2002-08-13 | Read-Rite Corporation | Structure and method for redeposition free thin film CPP read sensor fabrication |
JP3592140B2 (ja) | 1999-07-02 | 2004-11-24 | Tdk株式会社 | トンネル磁気抵抗効果型ヘッド |
CN1214414C (zh) * | 1999-07-22 | 2005-08-10 | 皇家菲利浦电子有限公司 | 磁性沟道结器件的制造方法 |
KR100696333B1 (ko) * | 1999-08-31 | 2007-03-21 | 유티스타콤코리아 유한회사 | 디지털 라디오 시스템에서의 다양한 인터폴레이션 레이트를 지원하는 안티이미징 필터 |
US6493195B1 (en) * | 1999-09-01 | 2002-12-10 | Nec Corporation | Magnetoresistance element, with lower electrode anti-erosion/flaking layer |
US6421212B1 (en) | 1999-09-21 | 2002-07-16 | Read-Rite Corporation | Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication |
JP3891540B2 (ja) * | 1999-10-25 | 2007-03-14 | キヤノン株式会社 | 磁気抵抗効果メモリ、磁気抵抗効果メモリに記録される情報の記録再生方法、およびmram |
US6721147B2 (en) | 1999-12-07 | 2004-04-13 | Fujitsu Limited | Longitudinally biased magnetoresistance effect magnetic head and magnetic reproducing apparatus |
US6556391B1 (en) * | 1999-12-07 | 2003-04-29 | Fujitsu Limited | Biasing layers for a magnetoresistance effect magnetic head using perpendicular current flow |
US6603642B1 (en) | 2000-03-15 | 2003-08-05 | Tdk Corporation | Magnetic transducer having a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers and a fixed-orientation-of-magnetization layer and thin film magnetic head including the magnetic transducer |
US6738234B1 (en) | 2000-03-15 | 2004-05-18 | Tdk Corporation | Thin film magnetic head and magnetic transducer |
US6639763B1 (en) | 2000-03-15 | 2003-10-28 | Tdk Corporation | Magnetic transducer and thin film magnetic head |
JP3468419B2 (ja) | 2000-03-17 | 2003-11-17 | Tdk株式会社 | トンネル磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置 |
US6519124B1 (en) | 2000-03-27 | 2003-02-11 | Tdk Corporation | Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide |
JP2001307307A (ja) * | 2000-04-19 | 2001-11-02 | Tdk Corp | トンネル磁気抵抗効果素子、薄膜磁気ヘッド、磁気ヘッド装置及び磁気ディスク装置 |
US6473275B1 (en) * | 2000-06-06 | 2002-10-29 | International Business Machines Corporation | Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor |
JP2002033532A (ja) * | 2000-07-17 | 2002-01-31 | Alps Electric Co Ltd | トンネル型磁気抵抗効果型素子及びその製造方法 |
JP2002050011A (ja) * | 2000-08-03 | 2002-02-15 | Nec Corp | 磁気抵抗効果素子、磁気抵抗効果ヘッド、磁気抵抗変換システム及び磁気記録システム |
US6542343B1 (en) | 2000-08-09 | 2003-04-01 | International Business Machines Corporation | Tunnel valve head design to lower resistance |
US6767655B2 (en) * | 2000-08-21 | 2004-07-27 | Matsushita Electric Industrial Co., Ltd. | Magneto-resistive element |
US6567244B1 (en) | 2000-10-10 | 2003-05-20 | Hitachi Global Storage Technologies Netherlands | Differential yoke type read head |
KR100650534B1 (ko) * | 2000-12-21 | 2006-11-27 | 후지쯔 가부시끼가이샤 | 자기 저항 효과 소자, 자기 헤드 및 이것을 사용하는 자기재생 장치 |
US6661625B1 (en) | 2001-02-20 | 2003-12-09 | Kyusik Sin | Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier |
US6667862B2 (en) | 2001-02-20 | 2003-12-23 | Carnegie Mellon University | Magnetoresistive read head having permanent magnet on top of magnetoresistive element |
US6597546B2 (en) * | 2001-04-19 | 2003-07-22 | International Business Machines Corporation | Tunnel junction sensor with an antiferromagnetic (AFM) coupled flux guide |
US6833982B2 (en) | 2001-05-03 | 2004-12-21 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic tunnel junction sensor with a free layer biased by longitudinal layers interfacing top surfaces of free layer extensions which extend beyond an active region of the sensor |
US6721139B2 (en) * | 2001-05-31 | 2004-04-13 | International Business Machines Corporation | Tunnel valve sensor with narrow gap flux guide employing a lamination of FeN and NiFeMo |
US6680830B2 (en) | 2001-05-31 | 2004-01-20 | International Business Machines Corporation | Tunnel valve sensor and flux guide with improved flux transfer therebetween |
US6655006B2 (en) * | 2001-06-28 | 2003-12-02 | International Business Machines Corporation | Method of making a tunnel junction sensor with a smooth interface between a pinned or free layer and a barrier layer |
US7057864B2 (en) * | 2001-07-10 | 2006-06-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for achieving physical connection between the flux guide and the free layer and that insulates the flux guide from the shields |
US6657825B2 (en) | 2001-08-02 | 2003-12-02 | International Business Machines Corporation | Self aligned magnetoresistive flux guide read head with exchange bias underneath free layer |
US6781801B2 (en) | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
US6826022B2 (en) * | 2001-08-13 | 2004-11-30 | Alps Electric Co., Ltd. | CPP type magnetic sensor or magnetic sensor using tunnel effect, and manufacturing method therefor |
US6992870B2 (en) * | 2001-10-25 | 2006-01-31 | Tdk Corporation | Magneto-resistive device, and magnetic head and head suspension assembly using same |
US6888705B2 (en) * | 2002-01-18 | 2005-05-03 | Hitachi Global Storage Technologies Netherlands B.V. | High linear density tunnel junction flux guide read head with in-stack longitudinal bias stack (LBS) |
US6757144B2 (en) | 2002-01-18 | 2004-06-29 | International Business Machines Corporation | Flux guide read head with in stack biased current perpendicular to the planes (CPP) sensor |
US6754056B2 (en) | 2002-01-18 | 2004-06-22 | International Business Machines Corporation | Read head having a tunnel junction sensor with a free layer biased by exchange coupling with insulating antiferromagnetic (AFM) layers |
US6756648B2 (en) * | 2002-03-25 | 2004-06-29 | International Business Machines Corporation | System and method for stabilizing a magnetic tunnel junction sensor |
JP3749873B2 (ja) * | 2002-03-28 | 2006-03-01 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
US6801410B2 (en) * | 2002-06-03 | 2004-10-05 | Seagate Technology Llc | Side flux guide for current perpendicular to plane magnetoresistive transducer |
US6819530B2 (en) | 2002-09-25 | 2004-11-16 | International Business Machines Corporation | Current perpendicular to the planes (CPP) sensor with free layer stabilized by current field |
US7068537B2 (en) * | 2002-11-06 | 2006-06-27 | Interuniversitair Microelektronica Centrum (Imec) | Magnetic device and method of making the same |
US7619431B2 (en) * | 2003-12-23 | 2009-11-17 | Nxp B.V. | High sensitivity magnetic built-in current sensor |
US7264974B2 (en) * | 2004-01-30 | 2007-09-04 | Headway Technologies, Inc. | Method for fabricating a low resistance TMR read head |
US7463459B2 (en) * | 2004-02-18 | 2008-12-09 | Hitachi Global Storage Technologies Netherlands B.V. | Self-pinned read sensor design with enhanced lead stabilizing mechanism |
US20060171197A1 (en) * | 2005-01-31 | 2006-08-03 | Ulrich Klostermann | Magnetoresistive memory element having a stacked structure |
US7515381B2 (en) * | 2005-12-22 | 2009-04-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method for fabricating a side shield for a flux guide layer for perpendicular magnetic recording |
US7599153B2 (en) | 2006-02-27 | 2009-10-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus providing a stabilized top shield in read head for magnetic recording |
US7848061B2 (en) * | 2006-03-14 | 2010-12-07 | Hitachi Global Storage Technologies Netherlands B.V. | Current perpendicular to plane (CPP) magnetoresistive sensor with back flux guide |
US7719801B2 (en) * | 2006-04-18 | 2010-05-18 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetoresistive (MR) element having a continuous flux guide defined by the free layer |
JP2008052885A (ja) * | 2006-07-28 | 2008-03-06 | Fujitsu Ltd | 磁気センサ及び磁気ディスク装置 |
JP4952725B2 (ja) | 2009-01-14 | 2012-06-13 | ソニー株式会社 | 不揮発性磁気メモリ装置 |
TWI434025B (zh) * | 2010-02-11 | 2014-04-11 | Geeng Jen Sheu | Non - contact sensing device |
US9627061B2 (en) | 2013-03-04 | 2017-04-18 | SK Hynix Inc. | Electronic device having resistance element |
KR102008412B1 (ko) | 2013-03-04 | 2019-08-08 | 에스케이하이닉스 주식회사 | 반도체 장치 및 이 반도체 장치를 포함하는 마이크로프로세서, 프로세서, 시스템, 데이터 저장 시스템 및 메모리 시스템 |
GB201519905D0 (en) * | 2015-11-11 | 2015-12-23 | Analog Devices Global | A thin film resistive device for use in an integrated circuit, an integrated cicruit including a thin film resistive device |
US10748560B2 (en) | 2017-12-11 | 2020-08-18 | International Business Machines Corporation | Apparatus having low-contact-pressure head-tape interface |
US10650846B2 (en) | 2017-12-11 | 2020-05-12 | International Business Machines Corporation | Apparatus having recessed TMR read sensor structures for robust head-tape interface |
US10755732B2 (en) * | 2017-12-12 | 2020-08-25 | International Business Machines Corporation | Apparatus having sensors with hard spacers and low-contact-pressure head-tape interface |
US10726868B2 (en) | 2017-12-12 | 2020-07-28 | International Business Machines Corporation | Apparatus having an array of write transducers having a low friction interface |
US11205447B2 (en) | 2019-08-21 | 2021-12-21 | Headway Technologies, Inc. | Reader noise reduction using spin hall effects |
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US5390061A (en) * | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
JPH0766033A (ja) * | 1993-08-30 | 1995-03-10 | Mitsubishi Electric Corp | 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ |
US5629922A (en) * | 1995-02-22 | 1997-05-13 | Massachusetts Institute Of Technology | Electron tunneling device using ferromagnetic thin films |
JP3217703B2 (ja) * | 1995-09-01 | 2001-10-15 | 株式会社東芝 | 磁性体デバイス及びそれを用いた磁気センサ |
US6219205B1 (en) * | 1995-10-10 | 2001-04-17 | Read-Rite Corporation | High density giant magnetoresistive transducer with recessed sensor |
EP0782129A3 (en) * | 1995-12-29 | 1998-12-09 | Read-Rite Corporation | Magnetoresistive cpp mode transducer with multiple spin valve members |
US5712612A (en) * | 1996-01-02 | 1998-01-27 | Hewlett-Packard Company | Tunneling ferrimagnetic magnetoresistive sensor |
US6084752A (en) * | 1996-02-22 | 2000-07-04 | Matsushita Electric Industrial Co., Ltd. | Thin film magnetic head |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5729410A (en) * | 1996-11-27 | 1998-03-17 | International Business Machines Corporation | Magnetic tunnel junction device with longitudinal biasing |
-
1997
- 1997-10-24 US US08/957,788 patent/US5901018A/en not_active Expired - Lifetime
-
1998
- 1998-09-15 KR KR1019980037935A patent/KR100295289B1/ko not_active IP Right Cessation
- 1998-09-22 MY MYPI98004346A patent/MY117419A/en unknown
- 1998-10-12 JP JP10289013A patent/JP3004007B2/ja not_active Expired - Fee Related
- 1998-10-16 SG SG9804218A patent/SG87011A1/en unknown
- 1998-10-20 EP EP98308586A patent/EP0911810B1/en not_active Expired - Lifetime
- 1998-10-20 DE DE69835650T patent/DE69835650T2/de not_active Expired - Fee Related
- 1998-10-23 CN CNB981234275A patent/CN1139916C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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MY117419A (en) | 2004-06-30 |
KR100295289B1 (ko) | 2001-10-26 |
CN1139916C (zh) | 2004-02-25 |
JPH11213350A (ja) | 1999-08-06 |
US5901018A (en) | 1999-05-04 |
KR19990036636A (ko) | 1999-05-25 |
SG87011A1 (en) | 2002-03-19 |
DE69835650T2 (de) | 2007-09-13 |
EP0911810A3 (en) | 1999-10-27 |
DE69835650D1 (de) | 2006-10-05 |
EP0911810A2 (en) | 1999-04-28 |
EP0911810B1 (en) | 2006-08-23 |
JP3004007B2 (ja) | 2000-01-31 |
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