CN1197532A - Fram存储单元 - Google Patents

Fram存储单元 Download PDF

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Publication number
CN1197532A
CN1197532A CN96197120A CN96197120A CN1197532A CN 1197532 A CN1197532 A CN 1197532A CN 96197120 A CN96197120 A CN 96197120A CN 96197120 A CN96197120 A CN 96197120A CN 1197532 A CN1197532 A CN 1197532A
Authority
CN
China
Prior art keywords
bistable
transistor
field effect
effect transistor
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN96197120A
Other languages
English (en)
Chinese (zh)
Inventor
H·高斯纳
I·艾瑟勒
F·维特曼
V·拉姆高帕尔劳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of CN1197532A publication Critical patent/CN1197532A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
CN96197120A 1995-09-21 1996-09-16 Fram存储单元 Pending CN1197532A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19535106.1 1995-09-21
DE19535106A DE19535106C2 (de) 1995-09-21 1995-09-21 SRAM-Speicherzelle

Publications (1)

Publication Number Publication Date
CN1197532A true CN1197532A (zh) 1998-10-28

Family

ID=7772785

Family Applications (1)

Application Number Title Priority Date Filing Date
CN96197120A Pending CN1197532A (zh) 1995-09-21 1996-09-16 Fram存储单元

Country Status (11)

Country Link
US (1) US6067247A (https=)
EP (1) EP0852056B1 (https=)
JP (1) JP3083567B2 (https=)
KR (1) KR100286953B1 (https=)
CN (1) CN1197532A (https=)
AT (1) ATE181450T1 (https=)
DE (2) DE19535106C2 (https=)
ES (1) ES2135925T3 (https=)
IN (1) IN188999B (https=)
RU (1) RU2188465C2 (https=)
WO (1) WO1997011465A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327448C (zh) * 2002-02-28 2007-07-18 三菱电机株式会社 含非易失存储单元的高稳定性半导体存储装置
CN100412991C (zh) * 2006-07-05 2008-08-20 北京大学 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301147B1 (en) * 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
GB2360113B (en) * 2000-03-08 2004-11-10 Seiko Epson Corp Dynamic random access memory
RU2470390C1 (ru) * 2011-05-03 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный политехнический университет" (ФГБОУ ВПО "СПбГПУ") Статическая запоминающая ячейка с двумя адресными входами

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7908340A (nl) * 1979-11-15 1981-06-16 Philips Nv Geheugencelinrichting voor statisch geheugen.
JPS56143587A (en) * 1980-03-26 1981-11-09 Fujitsu Ltd Static type memory circuit
FR2511822A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit
FR2629941B1 (fr) * 1988-04-12 1991-01-18 Commissariat Energie Atomique Memoire et cellule memoire statiques du type mis, procede de memorisation
RU2018979C1 (ru) * 1991-04-22 1994-08-30 Научно-исследовательский институт молекулярной электроники Запоминающее устройство
JP3288189B2 (ja) * 1994-12-12 2002-06-04 三菱電機株式会社 スタティックランダムアクセスメモリ
GB9509817D0 (en) * 1995-05-11 1995-07-05 Xilinx Inc Sense amplifier for reading logic device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327448C (zh) * 2002-02-28 2007-07-18 三菱电机株式会社 含非易失存储单元的高稳定性半导体存储装置
CN100412991C (zh) * 2006-07-05 2008-08-20 北京大学 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法

Also Published As

Publication number Publication date
EP0852056B1 (de) 1999-06-16
US6067247A (en) 2000-05-23
DE59602264D1 (de) 1999-07-22
ES2135925T3 (es) 1999-11-01
DE19535106C2 (de) 1998-03-19
JPH11500563A (ja) 1999-01-12
JP3083567B2 (ja) 2000-09-04
WO1997011465A2 (de) 1997-03-27
IN188999B (https=) 2002-12-07
KR100286953B1 (ko) 2001-04-16
KR19990045750A (ko) 1999-06-25
DE19535106A1 (de) 1997-03-27
RU2188465C2 (ru) 2002-08-27
ATE181450T1 (de) 1999-07-15
WO1997011465A3 (de) 1997-04-17
EP0852056A2 (de) 1998-07-08

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication