DE19535106C2 - SRAM-Speicherzelle - Google Patents

SRAM-Speicherzelle

Info

Publication number
DE19535106C2
DE19535106C2 DE19535106A DE19535106A DE19535106C2 DE 19535106 C2 DE19535106 C2 DE 19535106C2 DE 19535106 A DE19535106 A DE 19535106A DE 19535106 A DE19535106 A DE 19535106A DE 19535106 C2 DE19535106 C2 DE 19535106C2
Authority
DE
Germany
Prior art keywords
memory cell
bistable
effect transistor
field effect
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19535106A
Other languages
German (de)
English (en)
Other versions
DE19535106A1 (de
Inventor
Harald Grosner
Franz Dr Ing Wittmann
Ignaz Prof Dr Eisele
Rao Valipe Ramgopal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19535106A priority Critical patent/DE19535106C2/de
Priority to IN1680CA1996 priority patent/IN188999B/en
Priority to ES96934423T priority patent/ES2135925T3/es
Priority to DE59602264T priority patent/DE59602264D1/de
Priority to RU98107644/09A priority patent/RU2188465C2/ru
Priority to PCT/DE1996/001745 priority patent/WO1997011465A2/de
Priority to AT96934423T priority patent/ATE181450T1/de
Priority to EP96934423A priority patent/EP0852056B1/de
Priority to JP09512314A priority patent/JP3083567B2/ja
Priority to KR1019980701993A priority patent/KR100286953B1/ko
Priority to CN96197120A priority patent/CN1197532A/zh
Publication of DE19535106A1 publication Critical patent/DE19535106A1/de
Application granted granted Critical
Publication of DE19535106C2 publication Critical patent/DE19535106C2/de
Priority to US09/047,162 priority patent/US6067247A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE19535106A 1995-09-21 1995-09-21 SRAM-Speicherzelle Expired - Fee Related DE19535106C2 (de)

Priority Applications (12)

Application Number Priority Date Filing Date Title
DE19535106A DE19535106C2 (de) 1995-09-21 1995-09-21 SRAM-Speicherzelle
IN1680CA1996 IN188999B (https=) 1995-09-21 1996-09-10
KR1019980701993A KR100286953B1 (ko) 1995-09-21 1996-09-16 Sram 메모리 셀
RU98107644/09A RU2188465C2 (ru) 1995-09-21 1996-09-16 Запоминающая ячейка статического зупв
PCT/DE1996/001745 WO1997011465A2 (de) 1995-09-21 1996-09-16 Sram-speicherzelle
AT96934423T ATE181450T1 (de) 1995-09-21 1996-09-16 Sram-speicherzelle
ES96934423T ES2135925T3 (es) 1995-09-21 1996-09-16 Celula de memoria sram.
JP09512314A JP3083567B2 (ja) 1995-09-21 1996-09-16 Ｓｒａｍメモリセル
DE59602264T DE59602264D1 (de) 1995-09-21 1996-09-16 Sram-speicherzelle
CN96197120A CN1197532A (zh) 1995-09-21 1996-09-16 Fram存储单元
EP96934423A EP0852056B1 (de) 1995-09-21 1996-09-16 Sram-speicherzelle
US09/047,162 US6067247A (en) 1995-09-21 1998-03-23 SRAM memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19535106A DE19535106C2 (de) 1995-09-21 1995-09-21 SRAM-Speicherzelle

Publications (2)

Publication Number Publication Date
DE19535106A1 DE19535106A1 (de) 1997-03-27
DE19535106C2 true DE19535106C2 (de) 1998-03-19

Family

ID=7772785

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19535106A Expired - Fee Related DE19535106C2 (de) 1995-09-21 1995-09-21 SRAM-Speicherzelle
DE59602264T Expired - Fee Related DE59602264D1 (de) 1995-09-21 1996-09-16 Sram-speicherzelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59602264T Expired - Fee Related DE59602264D1 (de) 1995-09-21 1996-09-16 Sram-speicherzelle

Country Status (11)

Country Link
US (1) US6067247A (https=)
EP (1) EP0852056B1 (https=)
JP (1) JP3083567B2 (https=)
KR (1) KR100286953B1 (https=)
CN (1) CN1197532A (https=)
AT (1) ATE181450T1 (https=)
DE (2) DE19535106C2 (https=)
ES (1) ES2135925T3 (https=)
IN (1) IN188999B (https=)
RU (1) RU2188465C2 (https=)
WO (1) WO1997011465A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301147B1 (en) * 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
GB2360113B (en) * 2000-03-08 2004-11-10 Seiko Epson Corp Dynamic random access memory
JP2003257184A (ja) * 2002-02-28 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置
CN100412991C (zh) * 2006-07-05 2008-08-20 北京大学 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法
RU2470390C1 (ru) * 2011-05-03 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный политехнический университет" (ФГБОУ ВПО "СПбГПУ") Статическая запоминающая ячейка с двумя адресными входами

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7908340A (nl) * 1979-11-15 1981-06-16 Philips Nv Geheugencelinrichting voor statisch geheugen.
JPS56143587A (en) * 1980-03-26 1981-11-09 Fujitsu Ltd Static type memory circuit
FR2511822A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit
FR2629941B1 (fr) * 1988-04-12 1991-01-18 Commissariat Energie Atomique Memoire et cellule memoire statiques du type mis, procede de memorisation
RU2018979C1 (ru) * 1991-04-22 1994-08-30 Научно-исследовательский институт молекулярной электроники Запоминающее устройство
JP3288189B2 (ja) * 1994-12-12 2002-06-04 三菱電機株式会社 スタティックランダムアクセスメモリ
GB9509817D0 (en) * 1995-05-11 1995-07-05 Xilinx Inc Sense amplifier for reading logic device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
HOFFMANN, K.: "VLSI-Entwurf", Oldenbourg-Verlag, München 1993, 2. Aufl., S. 406 *
IEEE Transaction on Electron Devices, Vol. 39, Nr. 6, Juni 1992, S. 1398-1409 *
IEEE Transactions on Magnetics, Vol. MAG-6, Nr. 3, September 1970, S. 584-589 *
KISTLER, N., PLOEG, E.V., WOO, J., PLUMMER, J.: "Breakdown Voltage of Submicron MOSFET's: Microelectronic Manufacturing and Reliability, Vol. 1802, 1992, S. 202-212 *

Also Published As

Publication number Publication date
CN1197532A (zh) 1998-10-28
EP0852056B1 (de) 1999-06-16
US6067247A (en) 2000-05-23
DE59602264D1 (de) 1999-07-22
ES2135925T3 (es) 1999-11-01
JPH11500563A (ja) 1999-01-12
JP3083567B2 (ja) 2000-09-04
WO1997011465A2 (de) 1997-03-27
IN188999B (https=) 2002-12-07
KR100286953B1 (ko) 2001-04-16
KR19990045750A (ko) 1999-06-25
DE19535106A1 (de) 1997-03-27
RU2188465C2 (ru) 2002-08-27
ATE181450T1 (de) 1999-07-15
WO1997011465A3 (de) 1997-04-17
EP0852056A2 (de) 1998-07-08

Similar Documents

Publication Publication Date Title
DE2556831C2 (de) Matrixspeicher und Verfahren zu seinem Betrieb
DE68914084T2 (de) Halbleiterspeicheranordnung mit ferroelektrische Kondensatoren enthaltenden Zellen.
DE3877381T2 (de) Cmos-flip-flop-speicherzelle.
DE4121292C2 (de) Halbleiterspeichervorrichtung
DE68917609T2 (de) Schaltung zum Treiben eines Dekodierers für Programmierung von hochkapazitiven Zeilen.
DE2458848C2 (de) Speicheranordnung
DE2722757B2 (https=)
DE2628383C2 (de) Monolithisch integrierter dynamischer Halbleiterspeicher
DE69216728T2 (de) Hochstabile statische Speichereinrichtung mit Metalloxid-Halbleiter-Feldeffekttransistoren
DE3206507C2 (https=)
DE2332643C2 (de) Datenspeichervorrichtung
DE3101520A1 (de) Monolithisch integrierter halbleiterspeicher
DE4014228A1 (de) Schreib-lese-speicher
DE2363089C3 (de) Speicherzelle mit Feldeffekttransistoren
DE2754987C2 (de) Halbleiter-Speichervorrichtung
DE10256959A1 (de) Halbleiterspeichervorrichtung mit Speicherzellen, die keine Auffrischvorgänge erfordern
DE19535106C2 (de) SRAM-Speicherzelle
DE2242332B2 (de) Zelle für eine integrierte Speicherschaltung mit wahlfreiem Zugriff
DE2431079C3 (de) Dynamischer Halbleiterspeicher mit Zwei-Transistor-Speicherelementen
DE69414100T2 (de) Gegen kollisionen von schweren ionen unempfindliche speicherzelle
DE2309616C2 (de) Halbleiterspeicherschaltung
DE2519323A1 (de) Statisches drei-transistoren-speicherelement
DE3529476C2 (https=)
DE68925181T2 (de) Digitales Speichersystem
DE3850048T2 (de) Speicherzellenzugriff.

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee