KR100286953B1 - Sram 메모리 셀 - Google Patents

Sram 메모리 셀

Info

Publication number
KR100286953B1
KR100286953B1 KR1019980701993A KR19980701993A KR100286953B1 KR 100286953 B1 KR100286953 B1 KR 100286953B1 KR 1019980701993 A KR1019980701993 A KR 1019980701993A KR 19980701993 A KR19980701993 A KR 19980701993A KR 100286953 B1 KR100286953 B1 KR 100286953B1
Authority
KR
South Korea
Prior art keywords
field effect
memory cell
bistable
effect transistor
bimos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980701993A
Other languages
English (en)
Korean (ko)
Other versions
KR19990045750A (ko
Inventor
하랄트 고스너
이크나츠 아이젤레
프란츠 비트만
발리프 람고팔 라오
Original Assignee
칼 하인쯔 호르닝어
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 하인쯔 호르닝어, 지멘스 악티엔게젤샤프트 filed Critical 칼 하인쯔 호르닝어
Publication of KR19990045750A publication Critical patent/KR19990045750A/ko
Application granted granted Critical
Publication of KR100286953B1 publication Critical patent/KR100286953B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019980701993A 1995-09-21 1996-09-16 Sram 메모리 셀 Expired - Fee Related KR100286953B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19535106.1 1995-09-21
DE19535106A DE19535106C2 (de) 1995-09-21 1995-09-21 SRAM-Speicherzelle
PCT/DE1996/001745 WO1997011465A2 (de) 1995-09-21 1996-09-16 Sram-speicherzelle

Publications (2)

Publication Number Publication Date
KR19990045750A KR19990045750A (ko) 1999-06-25
KR100286953B1 true KR100286953B1 (ko) 2001-04-16

Family

ID=7772785

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980701993A Expired - Fee Related KR100286953B1 (ko) 1995-09-21 1996-09-16 Sram 메모리 셀

Country Status (11)

Country Link
US (1) US6067247A (https=)
EP (1) EP0852056B1 (https=)
JP (1) JP3083567B2 (https=)
KR (1) KR100286953B1 (https=)
CN (1) CN1197532A (https=)
AT (1) ATE181450T1 (https=)
DE (2) DE19535106C2 (https=)
ES (1) ES2135925T3 (https=)
IN (1) IN188999B (https=)
RU (1) RU2188465C2 (https=)
WO (1) WO1997011465A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301147B1 (en) * 1997-12-17 2001-10-09 National Scientific Corporation Electronic semiconductor circuit which includes a tunnel diode
GB2360113B (en) * 2000-03-08 2004-11-10 Seiko Epson Corp Dynamic random access memory
JP2003257184A (ja) * 2002-02-28 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置
CN100412991C (zh) * 2006-07-05 2008-08-20 北京大学 利用深亚微米cmos标准工艺实现的eeprom电平转换电路及方法
RU2470390C1 (ru) * 2011-05-03 2012-12-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный политехнический университет" (ФГБОУ ВПО "СПбГПУ") Статическая запоминающая ячейка с двумя адресными входами

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7908340A (nl) * 1979-11-15 1981-06-16 Philips Nv Geheugencelinrichting voor statisch geheugen.
JPS56143587A (en) * 1980-03-26 1981-11-09 Fujitsu Ltd Static type memory circuit
FR2511822A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Circuit logique bistable utilisant des transistors a effet de champ a faible tension de seuil et dispositif de memorisation comportant un tel circuit
FR2629941B1 (fr) * 1988-04-12 1991-01-18 Commissariat Energie Atomique Memoire et cellule memoire statiques du type mis, procede de memorisation
RU2018979C1 (ru) * 1991-04-22 1994-08-30 Научно-исследовательский институт молекулярной электроники Запоминающее устройство
JP3288189B2 (ja) * 1994-12-12 2002-06-04 三菱電機株式会社 スタティックランダムアクセスメモリ
GB9509817D0 (en) * 1995-05-11 1995-07-05 Xilinx Inc Sense amplifier for reading logic device

Also Published As

Publication number Publication date
CN1197532A (zh) 1998-10-28
EP0852056B1 (de) 1999-06-16
US6067247A (en) 2000-05-23
DE59602264D1 (de) 1999-07-22
ES2135925T3 (es) 1999-11-01
DE19535106C2 (de) 1998-03-19
JPH11500563A (ja) 1999-01-12
JP3083567B2 (ja) 2000-09-04
WO1997011465A2 (de) 1997-03-27
IN188999B (https=) 2002-12-07
KR19990045750A (ko) 1999-06-25
DE19535106A1 (de) 1997-03-27
RU2188465C2 (ru) 2002-08-27
ATE181450T1 (de) 1999-07-15
WO1997011465A3 (de) 1997-04-17
EP0852056A2 (de) 1998-07-08

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