CN1197122C - 制造半导体器件的方法 - Google Patents

制造半导体器件的方法 Download PDF

Info

Publication number
CN1197122C
CN1197122C CNB021087113A CN02108711A CN1197122C CN 1197122 C CN1197122 C CN 1197122C CN B021087113 A CNB021087113 A CN B021087113A CN 02108711 A CN02108711 A CN 02108711A CN 1197122 C CN1197122 C CN 1197122C
Authority
CN
China
Prior art keywords
processing
batch
cleaning
rie
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021087113A
Other languages
English (en)
Chinese (zh)
Other versions
CN1379438A (zh
Inventor
成田雅贵
奥村胜弥
大岩德久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1379438A publication Critical patent/CN1379438A/zh
Application granted granted Critical
Publication of CN1197122C publication Critical patent/CN1197122C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0611Sorting devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CNB021087113A 2001-03-29 2002-03-29 制造半导体器件的方法 Expired - Fee Related CN1197122C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP095306/2001 2001-03-29
JP2001095306A JP2002299315A (ja) 2001-03-29 2001-03-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1379438A CN1379438A (zh) 2002-11-13
CN1197122C true CN1197122C (zh) 2005-04-13

Family

ID=18949375

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021087113A Expired - Fee Related CN1197122C (zh) 2001-03-29 2002-03-29 制造半导体器件的方法

Country Status (5)

Country Link
US (1) US6911398B2 (https=)
JP (1) JP2002299315A (https=)
KR (1) KR100464579B1 (https=)
CN (1) CN1197122C (https=)
TW (1) TW538435B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464792B (zh) * 2008-03-17 2014-12-11 東京威力科創股份有限公司 Substrate processing system cleaning method, memory media and substrate processing system

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221313A (ja) * 2003-01-15 2004-08-05 Kawasaki Microelectronics Kk 半導体製造工程の管理方法および半導体製造ラインの管理システム
US7113253B2 (en) * 2003-09-16 2006-09-26 Asml Netherlands B.V. Method, apparatus and computer product for substrate processing
JP5215852B2 (ja) * 2006-07-31 2013-06-19 東京エレクトロン株式会社 基板処理装置およびコンディショニング要否決定方法
JP2009024229A (ja) * 2007-07-20 2009-02-05 Hitachi Kokusai Electric Inc 基板処理装置
JP2010098053A (ja) * 2008-10-15 2010-04-30 Tokyo Electron Ltd クリーニング方法及び記録媒体
JP5431901B2 (ja) * 2008-12-26 2014-03-05 キヤノンアネルバ株式会社 インライン真空処理装置、インライン真空処理装置の制御方法、情報記録媒体の製造方法
US10157741B1 (en) * 2017-07-31 2018-12-18 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing a semiconductor structure

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0785155A (ja) * 1993-06-23 1995-03-31 Sony Corp ロット管理装置
JP3522912B2 (ja) * 1994-08-01 2004-04-26 東京エレクトロン株式会社 洗浄処理装置およびその制御方法
US5985032A (en) * 1995-05-17 1999-11-16 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus
JPH10149990A (ja) 1996-11-19 1998-06-02 Kokusai Electric Co Ltd ガスクリーニング方法
JPH10199817A (ja) 1997-01-10 1998-07-31 Kokusai Electric Co Ltd 成膜装置
US6280790B1 (en) * 1997-06-30 2001-08-28 Applied Materials, Inc. Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
CN1097491C (zh) * 1997-11-14 2003-01-01 东京电子株式会社 一种等离子体处理系统及清洁等离子体处理系统的方法
US6168672B1 (en) * 1998-03-06 2001-01-02 Applied Materials Inc. Method and apparatus for automatically performing cleaning processes in a semiconductor wafer processing system
KR19990076407A (ko) * 1998-03-31 1999-10-15 윤종용 반도체장치의 제조공정에 있어서의 박막 형성방법
US6270576B1 (en) * 1998-08-05 2001-08-07 Tokyo Electron Limited Coating and developing apparatus
KR100331779B1 (ko) * 1999-07-02 2002-04-09 김광교 반도체 세정설비의 구동 제어방법
JP2001351868A (ja) * 2000-06-07 2001-12-21 Hitachi Kokusai Electric Inc 半導体製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI464792B (zh) * 2008-03-17 2014-12-11 東京威力科創股份有限公司 Substrate processing system cleaning method, memory media and substrate processing system

Also Published As

Publication number Publication date
KR20020077191A (ko) 2002-10-11
US6911398B2 (en) 2005-06-28
JP2002299315A (ja) 2002-10-11
KR100464579B1 (ko) 2005-01-03
CN1379438A (zh) 2002-11-13
TW538435B (en) 2003-06-21
US20020155727A1 (en) 2002-10-24

Similar Documents

Publication Publication Date Title
US6186153B1 (en) Plasma treatment method and manufacturing method of semiconductor device
US20070284690A1 (en) Etch features with reduced line edge roughness
CN1647257A (zh) 除去光刻胶和蚀刻残渣的方法
JPH0786242A (ja) 半導体装置の製造方法
CN101448580A (zh) 具有室去氟化和晶片去氟化中间步骤的等离子体蚀刻和光刻胶剥离工艺
CN1607651A (zh) 工艺腔的清洗方法
CN1886823A (zh) 具有修正的蚀刻
CN1197122C (zh) 制造半导体器件的方法
CN1291346A (zh) 用于限制临界尺寸增大的硬掩模的方法
CN1523656A (zh) 半导体装置的制造方法
CN1890785A (zh) 半导体基板导电层表面的净化方法
JP2003023072A (ja) 半導体装置の製造方法および半導体装置の製造装置
CN1691276A (zh) 移除阻挡层后的无晶片自动清洗
CN1797718A (zh) 在半导体基底的金属结构表面去除残余物的方法
US6329294B1 (en) Method for removing photoresist mask used for etching of metal layer and other etching by-products
US8236188B2 (en) Method for low-K dielectric etch with reduced damage
CN1866477A (zh) 一种去除晶片表面上蚀刻残留物的方法
CN1298201A (zh) 半导体器件的制造方法和设备
JP4755963B2 (ja) 半導体装置の製造方法
JPH05144779A (ja) シリコン酸化膜のドライエツチング方法
CN116469761B (zh) 钛层-介质层刻蚀副产物处理方法
CN111524785B (zh) 干法刻蚀腔的处理方法
CN1236975A (zh) 互联系统及其生产方法
US7192874B2 (en) Method for reducing foreign material concentrations in etch chambers
CN1590582A (zh) 降低沉积反应室腔体内氟残留的方法

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050413