CN118843923B - 剥除及清洁半导体结构的方法 - Google Patents

剥除及清洁半导体结构的方法

Info

Publication number
CN118843923B
CN118843923B CN202380025920.6A CN202380025920A CN118843923B CN 118843923 B CN118843923 B CN 118843923B CN 202380025920 A CN202380025920 A CN 202380025920A CN 118843923 B CN118843923 B CN 118843923B
Authority
CN
China
Prior art keywords
silicon
insulator structure
bath
ozone
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202380025920.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN118843923A (zh
Inventor
刘庆旻
梁海河
杨钧婷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of CN118843923A publication Critical patent/CN118843923A/zh
Application granted granted Critical
Publication of CN118843923B publication Critical patent/CN118843923B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements for supplying or controlling air or other gases for drying solid materials or objects
    • F26B21/40—Arrangements for supplying or controlling air or other gases for drying solid materials or objects using gases other than air
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202380025920.6A 2022-02-11 2023-01-31 剥除及清洁半导体结构的方法 Active CN118843923B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/670,167 US11798802B2 (en) 2022-02-11 2022-02-11 Methods for stripping and cleaning semiconductor structures
US17/670,167 2022-02-11
PCT/US2023/061670 WO2023154644A1 (en) 2022-02-11 2023-01-31 Methods for stripping and cleaning semiconductor structures

Publications (2)

Publication Number Publication Date
CN118843923A CN118843923A (zh) 2024-10-25
CN118843923B true CN118843923B (zh) 2026-04-14

Family

ID=85410106

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380025920.6A Active CN118843923B (zh) 2022-02-11 2023-01-31 剥除及清洁半导体结构的方法

Country Status (7)

Country Link
US (1) US11798802B2 (https=)
EP (1) EP4476761B1 (https=)
JP (1) JP7825725B2 (https=)
KR (1) KR20240151781A (https=)
CN (1) CN118843923B (https=)
TW (1) TW202349491A (https=)
WO (1) WO2023154644A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026015619A1 (en) * 2024-07-10 2026-01-15 Globalwafers Co., Ltd. Methods of processing semiconductor-on-insulator structures using clean-and-etch operation
US20260018407A1 (en) 2024-07-11 2026-01-15 Globalwafers Co., Ltd. Methods for tunable dielectric thickness of a semiconductor substrate using back surface heating
WO2026015773A1 (en) 2024-07-11 2026-01-15 Globalwafers Co., Ltd. Methods for semiconductor substrate processing by densifying a dielectric layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217312A (ja) * 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp Ｓｉｍｏｘウェーハの製造方法及びその方法で製造されたｓｉｍｏｘウェーハ
WO2021118818A1 (en) * 2019-12-13 2021-06-17 Globalwafers Co., Ltd. Methods for removing an oxide film from a soi structure and methods for preparing a soi structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157686A1 (en) 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
JP5365057B2 (ja) 2008-04-11 2013-12-11 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造方法
FR2944645B1 (fr) * 2009-04-21 2011-09-16 Soitec Silicon On Insulator Procede d'amincissement d'un substrat silicium sur isolant
US8796116B2 (en) * 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
US20150357180A1 (en) 2014-06-10 2015-12-10 Sunedison Semiconductor Limited (Uen201334164H) Methods for cleaning semiconductor substrates
FR3085603B1 (fr) 2018-09-11 2020-08-14 Soitec Silicon On Insulator Procede pour le traitement d'un susbtrat soi dans un equipement de nettoyage monoplaque

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005217312A (ja) * 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp Ｓｉｍｏｘウェーハの製造方法及びその方法で製造されたｓｉｍｏｘウェーハ
WO2021118818A1 (en) * 2019-12-13 2021-06-17 Globalwafers Co., Ltd. Methods for removing an oxide film from a soi structure and methods for preparing a soi structure

Also Published As

Publication number Publication date
JP2025506486A (ja) 2025-03-11
WO2023154644A1 (en) 2023-08-17
JP7825725B2 (ja) 2026-03-06
US20230260779A1 (en) 2023-08-17
EP4476761A1 (en) 2024-12-18
US11798802B2 (en) 2023-10-24
TW202349491A (zh) 2023-12-16
KR20240151781A (ko) 2024-10-18
CN118843923A (zh) 2024-10-25
EP4476761B1 (en) 2025-12-10

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