JP7825725B2 - 半導体構造体の剥離および洗浄方法 - Google Patents

半導体構造体の剥離および洗浄方法

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Publication number
JP7825725B2
JP7825725B2 JP2024547490A JP2024547490A JP7825725B2 JP 7825725 B2 JP7825725 B2 JP 7825725B2 JP 2024547490 A JP2024547490 A JP 2024547490A JP 2024547490 A JP2024547490 A JP 2024547490A JP 7825725 B2 JP7825725 B2 JP 7825725B2
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JP
Japan
Prior art keywords
silicon
insulator structure
bath
ozone
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024547490A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025506486A (ja
JP2025506486A5 (https=
Inventor
リウ，チンミン
リアン，ハイホァ
ヤン，ジュンティン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
GlobalWafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GlobalWafers Co Ltd filed Critical GlobalWafers Co Ltd
Publication of JP2025506486A publication Critical patent/JP2025506486A/ja
Publication of JP2025506486A5 publication Critical patent/JP2025506486A5/ja
Application granted granted Critical
Publication of JP7825725B2 publication Critical patent/JP7825725B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66—Non-ionic compounds
    • C11D1/72—Ethers of polyoxyalkylene glycols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/042—Acids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements for supplying or controlling air or other gases for drying solid materials or objects
    • F26B21/40—Arrangements for supplying or controlling air or other gases for drying solid materials or objects using gases other than air
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2024547490A 2022-02-11 2023-01-31 半導体構造体の剥離および洗浄方法 Active JP7825725B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/670,167 US11798802B2 (en) 2022-02-11 2022-02-11 Methods for stripping and cleaning semiconductor structures
US17/670,167 2022-02-11
PCT/US2023/061670 WO2023154644A1 (en) 2022-02-11 2023-01-31 Methods for stripping and cleaning semiconductor structures

Publications (3)

Publication Number Publication Date
JP2025506486A JP2025506486A (ja) 2025-03-11
JP2025506486A5 JP2025506486A5 (https=) 2026-01-16
JP7825725B2 true JP7825725B2 (ja) 2026-03-06

Family

ID=85410106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024547490A Active JP7825725B2 (ja) 2022-02-11 2023-01-31 半導体構造体の剥離および洗浄方法

Country Status (7)

Country Link
US (1) US11798802B2 (https=)
EP (1) EP4476761B1 (https=)
JP (1) JP7825725B2 (https=)
KR (1) KR20240151781A (https=)
CN (1) CN118843923B (https=)
TW (1) TW202349491A (https=)
WO (1) WO2023154644A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026015619A1 (en) * 2024-07-10 2026-01-15 Globalwafers Co., Ltd. Methods of processing semiconductor-on-insulator structures using clean-and-etch operation
US20260018407A1 (en) 2024-07-11 2026-01-15 Globalwafers Co., Ltd. Methods for tunable dielectric thickness of a semiconductor substrate using back surface heating
WO2026015773A1 (en) 2024-07-11 2026-01-15 Globalwafers Co., Ltd. Methods for semiconductor substrate processing by densifying a dielectric layer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP2004519088A (ja) 2000-06-26 2004-06-24 アプライド　マテリアルズ　インコーポレイテッド 枚葉プロセスにおけるウェーハの洗浄方法及び洗浄液
JP2005217312A (ja) 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp Ｓｉｍｏｘウェーハの製造方法及びその方法で製造されたｓｉｍｏｘウェーハ
JP2009506538A (ja) 2005-08-23 2009-02-12 エーエスエム アメリカ インコーポレイテッド シリコン表面の調製
JP2014508405A (ja) 2011-01-31 2014-04-03 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Ｓｏｉ構造体のデバイス層中の金属含有量の減少方法、およびこのような方法により製造されるｓｏｉ構造体

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157686A1 (en) 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
JP5365057B2 (ja) 2008-04-11 2013-12-11 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造方法
FR2944645B1 (fr) * 2009-04-21 2011-09-16 Soitec Silicon On Insulator Procede d'amincissement d'un substrat silicium sur isolant
US20150357180A1 (en) 2014-06-10 2015-12-10 Sunedison Semiconductor Limited (Uen201334164H) Methods for cleaning semiconductor substrates
FR3085603B1 (fr) 2018-09-11 2020-08-14 Soitec Silicon On Insulator Procede pour le traitement d'un susbtrat soi dans un equipement de nettoyage monoplaque
US11282739B2 (en) 2019-12-13 2022-03-22 Globalwafers Co., Ltd. Methods for removing an oxide film from a SOI structure and methods for preparing a SOI structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004519088A (ja) 2000-06-26 2004-06-24 アプライド　マテリアルズ　インコーポレイテッド 枚葉プロセスにおけるウェーハの洗浄方法及び洗浄液
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP2005217312A (ja) 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp Ｓｉｍｏｘウェーハの製造方法及びその方法で製造されたｓｉｍｏｘウェーハ
JP2009506538A (ja) 2005-08-23 2009-02-12 エーエスエム アメリカ インコーポレイテッド シリコン表面の調製
JP2014508405A (ja) 2011-01-31 2014-04-03 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Ｓｏｉ構造体のデバイス層中の金属含有量の減少方法、およびこのような方法により製造されるｓｏｉ構造体

Also Published As

Publication number Publication date
CN118843923B (zh) 2026-04-14
JP2025506486A (ja) 2025-03-11
WO2023154644A1 (en) 2023-08-17
US20230260779A1 (en) 2023-08-17
EP4476761A1 (en) 2024-12-18
US11798802B2 (en) 2023-10-24
TW202349491A (zh) 2023-12-16
KR20240151781A (ko) 2024-10-18
CN118843923A (zh) 2024-10-25
EP4476761B1 (en) 2025-12-10

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