JP2025506486A5 - - Google Patents
Info
- Publication number
- JP2025506486A5 JP2025506486A5 JP2024547490A JP2024547490A JP2025506486A5 JP 2025506486 A5 JP2025506486 A5 JP 2025506486A5 JP 2024547490 A JP2024547490 A JP 2024547490A JP 2024547490 A JP2024547490 A JP 2024547490A JP 2025506486 A5 JP2025506486 A5 JP 2025506486A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- insulator structure
- ozone
- bath
- treated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/670,167 US11798802B2 (en) | 2022-02-11 | 2022-02-11 | Methods for stripping and cleaning semiconductor structures |
| US17/670,167 | 2022-02-11 | ||
| PCT/US2023/061670 WO2023154644A1 (en) | 2022-02-11 | 2023-01-31 | Methods for stripping and cleaning semiconductor structures |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2025506486A JP2025506486A (ja) | 2025-03-11 |
| JP2025506486A5 true JP2025506486A5 (https=) | 2026-01-16 |
| JP7825725B2 JP7825725B2 (ja) | 2026-03-06 |
Family
ID=85410106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024547490A Active JP7825725B2 (ja) | 2022-02-11 | 2023-01-31 | 半導体構造体の剥離および洗浄方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11798802B2 (https=) |
| EP (1) | EP4476761B1 (https=) |
| JP (1) | JP7825725B2 (https=) |
| KR (1) | KR20240151781A (https=) |
| CN (1) | CN118843923B (https=) |
| TW (1) | TW202349491A (https=) |
| WO (1) | WO2023154644A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026015619A1 (en) * | 2024-07-10 | 2026-01-15 | Globalwafers Co., Ltd. | Methods of processing semiconductor-on-insulator structures using clean-and-etch operation |
| US20260018407A1 (en) | 2024-07-11 | 2026-01-15 | Globalwafers Co., Ltd. | Methods for tunable dielectric thickness of a semiconductor substrate using back surface heating |
| WO2026015773A1 (en) | 2024-07-11 | 2026-01-15 | Globalwafers Co., Ltd. | Methods for semiconductor substrate processing by densifying a dielectric layer |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020157686A1 (en) | 1997-05-09 | 2002-10-31 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7456113B2 (en) * | 2000-06-26 | 2008-11-25 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
| US6927176B2 (en) * | 2000-06-26 | 2005-08-09 | Applied Materials, Inc. | Cleaning method and solution for cleaning a wafer in a single wafer process |
| JP2002329691A (ja) | 2001-04-27 | 2002-11-15 | Shin Etsu Handotai Co Ltd | シリコンウェーハの洗浄方法 |
| JP2005217312A (ja) | 2004-01-30 | 2005-08-11 | Sumitomo Mitsubishi Silicon Corp | Simoxウェーハの製造方法及びその方法で製造されたsimoxウェーハ |
| US7479460B2 (en) * | 2005-08-23 | 2009-01-20 | Asm America, Inc. | Silicon surface preparation |
| JP5365057B2 (ja) | 2008-04-11 | 2013-12-11 | 株式会社Sumco | 貼り合わせウェーハの製造方法 |
| FR2944645B1 (fr) * | 2009-04-21 | 2011-09-16 | Soitec Silicon On Insulator | Procede d'amincissement d'un substrat silicium sur isolant |
| US8796116B2 (en) * | 2011-01-31 | 2014-08-05 | Sunedison Semiconductor Limited | Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods |
| US20150357180A1 (en) | 2014-06-10 | 2015-12-10 | Sunedison Semiconductor Limited (Uen201334164H) | Methods for cleaning semiconductor substrates |
| FR3085603B1 (fr) | 2018-09-11 | 2020-08-14 | Soitec Silicon On Insulator | Procede pour le traitement d'un susbtrat soi dans un equipement de nettoyage monoplaque |
| US11282739B2 (en) | 2019-12-13 | 2022-03-22 | Globalwafers Co., Ltd. | Methods for removing an oxide film from a SOI structure and methods for preparing a SOI structure |
-
2022
- 2022-02-11 US US17/670,167 patent/US11798802B2/en active Active
-
2023
- 2023-01-31 KR KR1020247029809A patent/KR20240151781A/ko active Pending
- 2023-01-31 CN CN202380025920.6A patent/CN118843923B/zh active Active
- 2023-01-31 WO PCT/US2023/061670 patent/WO2023154644A1/en not_active Ceased
- 2023-01-31 EP EP23708124.5A patent/EP4476761B1/en active Active
- 2023-01-31 JP JP2024547490A patent/JP7825725B2/ja active Active
- 2023-02-09 TW TW112104637A patent/TW202349491A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2025506486A5 (https=) | ||
| US5679171A (en) | Method of cleaning substrate | |
| CN102842652A (zh) | 硅片的制绒酸洗的方法 | |
| JP2023171856A (ja) | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 | |
| JP2008172016A (ja) | 半導体製造装置用部材の洗浄用組成物及びそれを用いた洗浄方法 | |
| JP3916526B2 (ja) | シリコン基板のエッチング方法 | |
| JP2012009722A (ja) | 太陽電池基板用半導体ウェーハの洗浄方法 | |
| CN111312584A (zh) | 一种晶圆表面的清洗方法 | |
| US6638365B2 (en) | Method for obtaining clean silicon surfaces for semiconductor manufacturing | |
| JP2009231346A (ja) | 基板処理装置および基板処理方法 | |
| CN114975686B (zh) | 一种单晶硅片及其制绒方法 | |
| CN111554774A (zh) | 一种硅片制绒后处理方法 | |
| CN104124136A (zh) | 半导体晶片清洗方法 | |
| CN104752196A (zh) | 光刻胶去除的后处理方法及半导体器件的制作方法 | |
| JP4351497B2 (ja) | 半導体装置の製造方法、及び半導体製造装置 | |
| WO2014117624A1 (zh) | 硅晶片的钝化层的腐蚀方法 | |
| JP2002075959A (ja) | 半導体基板の洗浄処理及びウェットエッチング処理を同時に行う方法 | |
| CN115831712A (zh) | 一种半导体晶圆蚀刻后的深孔清洗方法 | |
| JPH07321080A (ja) | シリコンウェハーの洗浄方法 | |
| CN102468130A (zh) | 湿法化学清洗方法 | |
| KR100771535B1 (ko) | 금속오염 억제를 위한 반도체웨이퍼의 린스방법 | |
| KR100598287B1 (ko) | 반도체 소자의 세정 방법 | |
| KR960003754B1 (ko) | 웨이퍼 세척공정시 워터마크 제거방법 | |
| KR0150668B1 (ko) | 반도체 소자 제조방법 | |
| KR0121772B1 (ko) | 폴리실리콘 표면을 친수성화시키는 방법 |