TW202349491A - 剝除及清洗半導體結構之方法 - Google Patents

剝除及清洗半導體結構之方法 Download PDF

Info

Publication number
TW202349491A
TW202349491A TW112104637A TW112104637A TW202349491A TW 202349491 A TW202349491 A TW 202349491A TW 112104637 A TW112104637 A TW 112104637A TW 112104637 A TW112104637 A TW 112104637A TW 202349491 A TW202349491 A TW 202349491A
Authority
TW
Taiwan
Prior art keywords
silicon
insulator structure
bath
ozone
insulator
Prior art date
Application number
TW112104637A
Other languages
English (en)
Chinese (zh)
Inventor
劉慶旻
海河 梁
楊鈞婷
Original Assignee
環球晶圓股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 環球晶圓股份有限公司 filed Critical 環球晶圓股份有限公司
Publication of TW202349491A publication Critical patent/TW202349491A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/50Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/72Ethers of polyoxyalkylene glycols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/042Acids
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26DRYING
    • F26BDRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00Arrangements for supplying or controlling air or other gases for drying solid materials or objects
    • F26B21/40Arrangements for supplying or controlling air or other gases for drying solid materials or objects using gases other than air
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW112104637A 2022-02-11 2023-02-09 剝除及清洗半導體結構之方法 TW202349491A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/670,167 US11798802B2 (en) 2022-02-11 2022-02-11 Methods for stripping and cleaning semiconductor structures
US17/670,167 2022-02-11

Publications (1)

Publication Number Publication Date
TW202349491A true TW202349491A (zh) 2023-12-16

Family

ID=85410106

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112104637A TW202349491A (zh) 2022-02-11 2023-02-09 剝除及清洗半導體結構之方法

Country Status (7)

Country Link
US (1) US11798802B2 (https=)
EP (1) EP4476761B1 (https=)
JP (1) JP7825725B2 (https=)
KR (1) KR20240151781A (https=)
CN (1) CN118843923B (https=)
TW (1) TW202349491A (https=)
WO (1) WO2023154644A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026015619A1 (en) * 2024-07-10 2026-01-15 Globalwafers Co., Ltd. Methods of processing semiconductor-on-insulator structures using clean-and-etch operation
US20260018407A1 (en) 2024-07-11 2026-01-15 Globalwafers Co., Ltd. Methods for tunable dielectric thickness of a semiconductor substrate using back surface heating
WO2026015773A1 (en) 2024-07-11 2026-01-15 Globalwafers Co., Ltd. Methods for semiconductor substrate processing by densifying a dielectric layer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157686A1 (en) 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
JP2002329691A (ja) 2001-04-27 2002-11-15 Shin Etsu Handotai Co Ltd シリコンウェーハの洗浄方法
JP2005217312A (ja) 2004-01-30 2005-08-11 Sumitomo Mitsubishi Silicon Corp Simoxウェーハの製造方法及びその方法で製造されたsimoxウェーハ
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
JP5365057B2 (ja) 2008-04-11 2013-12-11 株式会社Sumco 貼り合わせウェーハの製造方法
FR2944645B1 (fr) * 2009-04-21 2011-09-16 Soitec Silicon On Insulator Procede d'amincissement d'un substrat silicium sur isolant
US8796116B2 (en) * 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
US20150357180A1 (en) 2014-06-10 2015-12-10 Sunedison Semiconductor Limited (Uen201334164H) Methods for cleaning semiconductor substrates
FR3085603B1 (fr) 2018-09-11 2020-08-14 Soitec Silicon On Insulator Procede pour le traitement d'un susbtrat soi dans un equipement de nettoyage monoplaque
US11282739B2 (en) 2019-12-13 2022-03-22 Globalwafers Co., Ltd. Methods for removing an oxide film from a SOI structure and methods for preparing a SOI structure

Also Published As

Publication number Publication date
CN118843923B (zh) 2026-04-14
JP2025506486A (ja) 2025-03-11
WO2023154644A1 (en) 2023-08-17
JP7825725B2 (ja) 2026-03-06
US20230260779A1 (en) 2023-08-17
EP4476761A1 (en) 2024-12-18
US11798802B2 (en) 2023-10-24
KR20240151781A (ko) 2024-10-18
CN118843923A (zh) 2024-10-25
EP4476761B1 (en) 2025-12-10

Similar Documents

Publication Publication Date Title
JP7825725B2 (ja) 半導体構造体の剥離および洗浄方法
JP6373354B2 (ja) ライトポイント欠陥と表面粗さを低減するための半導体オンインシュレータウエハの製造方法
CN101106072B (zh) 直接接合电子学、光学或光电子学使用的两个基板的方法
JP6160617B2 (ja) ハイブリッド基板の製造方法及びハイブリッド基板
TWI492275B (zh) The method of manufacturing the bonded substrate
KR101672547B1 (ko) 샌드 블라스트 처리된 이면을 갖는 soi 기판의 제조 방법
JP7710498B2 (ja) シリコン箔層の移転方法
JPWO2014017368A1 (ja) Sos基板の製造方法及びsos基板
KR100884672B1 (ko) 웨이퍼 표면 처리 방법
JP2003309101A (ja) 貼り合せ基板の製造方法
JP6200273B2 (ja) 貼り合わせウェーハの製造方法
JP5443819B2 (ja) 粗面化された基板の製造方法
JP7251419B2 (ja) 貼り合わせsoiウェーハの製造方法
JP5953340B2 (ja) 貼り合わせ基板の製造方法
JP2005217312A (ja) Simoxウェーハの製造方法及びその方法で製造されたsimoxウェーハ
JP2012054451A (ja) 貼り合わせ基板の製造方法および半導体基板洗浄液