CN1187801C - 化合物半导体装置的制造方法 - Google Patents
化合物半导体装置的制造方法 Download PDFInfo
- Publication number
- CN1187801C CN1187801C CNB021233152A CN02123315A CN1187801C CN 1187801 C CN1187801 C CN 1187801C CN B021233152 A CNB021233152 A CN B021233152A CN 02123315 A CN02123315 A CN 02123315A CN 1187801 C CN1187801 C CN 1187801C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 150000001875 compounds Chemical class 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 51
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 46
- 229910052753 mercury Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 22
- 238000009826 distribution Methods 0.000 claims description 18
- 238000003475 lamination Methods 0.000 claims description 16
- 238000005304 joining Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 19
- 238000002955 isolation Methods 0.000 abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 10
- 239000010931 gold Substances 0.000 abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 10
- 238000007747 plating Methods 0.000 abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 165
- 108091006146 Channels Proteins 0.000 description 58
- 239000011241 protective layer Substances 0.000 description 30
- 150000002500 ions Chemical class 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
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- 230000008878 coupling Effects 0.000 description 4
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- 238000010438 heat treatment Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 101001042463 Bitis arietans C-type lectin 2 Proteins 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 101000633734 Echis ocellatus Snaclec 2 Proteins 0.000 description 3
- 101710198350 Snaclec 1 Proteins 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229940090044 injection Drugs 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000010025 steaming Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000008676 import Effects 0.000 description 1
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- 238000001764 infiltration Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01028—Nickel [Ni]
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- H01L2924/01078—Platinum [Pt]
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- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0504—14th Group
- H01L2924/05042—Si3N4
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001182687A JP2003007725A (ja) | 2001-06-18 | 2001-06-18 | 化合物半導体装置の製造方法 |
JP182687/2001 | 2001-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1392597A CN1392597A (zh) | 2003-01-22 |
CN1187801C true CN1187801C (zh) | 2005-02-02 |
Family
ID=19022731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021233152A Expired - Fee Related CN1187801C (zh) | 2001-06-18 | 2002-06-18 | 化合物半导体装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2003007725A (ja) |
KR (1) | KR100620929B1 (ja) |
CN (1) | CN1187801C (ja) |
TW (1) | TW591805B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005353992A (ja) * | 2004-06-14 | 2005-12-22 | Sanyo Electric Co Ltd | 化合物半導体装置およびその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5633817A (en) * | 1979-08-29 | 1981-04-04 | Fujitsu Ltd | Preparation of semiconductor device |
-
2001
- 2001-06-18 JP JP2001182687A patent/JP2003007725A/ja not_active Withdrawn
-
2002
- 2002-05-21 TW TW91110607A patent/TW591805B/zh not_active IP Right Cessation
- 2002-06-17 KR KR20020033696A patent/KR100620929B1/ko not_active IP Right Cessation
- 2002-06-18 CN CNB021233152A patent/CN1187801C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2003007725A (ja) | 2003-01-10 |
KR100620929B1 (ko) | 2006-09-13 |
TW591805B (en) | 2004-06-11 |
CN1392597A (zh) | 2003-01-22 |
KR20020096952A (ko) | 2002-12-31 |
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Granted publication date: 20050202 Termination date: 20100618 |